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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQD10N20CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd10n20ctm-datasheets-4156.pdf | 200V | 7.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 360mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FAST SWITCHING | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 11 ns | 92ns | 72 ns | 70 ns | 7.8A | 30V | SILICON | DRAIN | SWITCHING | 4V | 50W Tc | TO-252AA | 200V | N-Channel | 510pF @ 25V | 360m Ω @ 3.9A, 10V | 4V @ 250μA | 7.8A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| RTF025N03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | 30V | 2.5A | 3-SMD, Flat Lead | Lead Free | 3 | 16 Weeks | No SVHC | 67MOhm | 3 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 3 | Single | 10 | 800mW | 1 | FET General Purpose Power | 8 ns | 15ns | 15 ns | 27 ns | 2.5A | 12V | SILICON | SWITCHING | 1.5V | 800mW Ta | 30V | N-Channel | 270pF @ 10V | 67m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 2.5A Ta | 5.2nC @ 4.5V | 2.5V 4.5V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLMS2002TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irlms2002trpbf-datasheets-3937.pdf | 20V | 6.5A | SOT-23-6 | 2.9972mm | 1.143mm | 1.75mm | Lead Free | 6 | 12 Weeks | No SVHC | 300mOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | GULL WING | Single | 2W | 1 | R-PDSO-G6 | 8.5 ns | 11ns | 16 ns | 36 ns | 6.5A | 12V | SILICON | SWITCHING | 1.2V | 2W Ta | 20A | 20V | N-Channel | 1310pF @ 15V | 1.2 V | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 6.5A Ta | 22nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| BUK9Y21-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y2140e115-datasheets-3791.pdf | 15.875mm | SC-100, SOT-669 | 15.875mm | Black, Clear | Lead Free | Metal | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 1 | 6.2 ns | 9.7ns | 8.2 ns | 10.5 ns | 33A | 15V | 40V | DRAIN | SWITCHING | 45W Tc | MO-235 | 40V | N-Channel | 824pF @ 25V | 17m Ω @ 10A, 10V | 2.1V @ 1mA | 33A Tc | 7nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| PCP1405-TD-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-pcp1405tdh-datasheets-3569.pdf | TO-243AA | Lead Free | 2 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 7.6 ns | 7.8ns | 26 ns | 19 ns | 600mA | 10V | Single | 3.5W Tc | 0.6A | 250V | N-Channel | 140pF @ 20V | 6.5 Ω @ 300mA, 4.5V | 1.3V @ 1mA | 600mA Ta | 2.1nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2N60 | Alpha & Omega Semiconductor Inc. | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | No | SINGLE | GULL WING | 3 | 56.8W | 1 | R-PSSO-G2 | 2A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 56.8W Tc | 2A | 8A | N-Channel | 325pF @ 25V | 4.4 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMPDM7002AHC TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmpdm7002ahctrpbfree-datasheets-3751.pdf | TO-236-3, SC-59, SOT-23-3 | 22 Weeks | YES | FET General Purpose Power | Single | 60V | 350mW Ta | 1A | N-Channel | 240pF @ 25V | 220m Ω @ 500mA, 10V | 2.3V @ 250μA | 1A Ta | 2.3nC @ 4.5V | 5V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7113ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7113adnt1ge3-datasheets-3802.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 1 | 150°C | S-PDSO-F5 | 10 ns | 20 ns | -3.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 27.8W Tc | 20A | -100V | P-Channel | 515pF @ 50V | 132m Ω @ 3.8A, 10V | 2.6V @ 250μA | 10.8A Tc | 16.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2328CX RFG | Taiwan Semiconductor Corporation | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2328cxrfg-datasheets-3807.pdf | TO-236-3, SC-59, SOT-23-3 | 28 Weeks | e3 | Tin (Sn) | 100V | 1.38W Ta | N-Channel | 975pF @ 25V | 250m Ω @ 1.5A, 10V | 2.5V @ 250μA | 1.5A Ta | 12nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS412DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis412dnt1ge3-datasheets-3828.pdf | PowerPAK® 1212-8 | 3.05mm | 1.17mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 24MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 15.6W | 1 | FET General Purpose Power | 150°C | S-XDSO-C5 | 5 ns | 12ns | 10 ns | 15 ns | 8.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 3.2W Ta 15.6W Tc | 30A | 30V | N-Channel | 435pF @ 15V | 1 V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BUK9Y25-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y2560e115-datasheets-3785.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | 65W | 1 | 8.5 ns | 12.1ns | 10.4 ns | 14.7 ns | 34A | 10V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65W Tc | MO-235 | 0.025Ohm | 23.6 mJ | 60V | N-Channel | 1500pF @ 25V | 21.5m Ω @ 10A, 10V | 2.1V @ 1mA | 34A Tc | 12nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ3419EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq3419evt1ge3-datasheets-3842.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 5W Tc | MO-193AA | 6.9A | 0.058Ohm | 100 pF | P-Channel | 990pF @ 20V | 58m Ω @ 2.5A, 10V | 2.5V @ 250μA | 6.9A Tc | 11.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2316bdst1ge3-datasheets-3870.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 50MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Powers | 20 ns | 65ns | 65 ns | 11 ns | 4.5A | 20V | SILICON | SWITCHING | 3V | 1.25W Ta 1.66W Tc | 30V | N-Channel | 350pF @ 15V | 50m Ω @ 3.9A, 10V | 3V @ 250μA | 4.5A Tc | 9.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI3443BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3443bdvt1e3-datasheets-3274.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 990.6μm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 60mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 22 ns | 35ns | 25 ns | 45 ns | 3.6A | 12V | SILICON | 20V | -1.4V | 1.1W Ta | -20V | P-Channel | -1.4 V | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI4447ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4447adyt1ge3-datasheets-3889.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 8 | No | 1 | Single | 2.5W | 2 | 8-SO | 970pF | 7 ns | 12ns | 9 ns | 30 ns | 7.2A | 20V | 40V | -1.2V | 4.2W Tc | 45mOhm | -40V | P-Channel | 970pF @ 20V | 45mOhm @ 5A, 10V | 2.5V @ 250μA | 7.2A Tc | 38nC @ 10V | 45 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTR3A30PZT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntr3a30pzt1g-datasheets-3852.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 4 Weeks | 1.437803g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | 3 | 1 | Single | 480mW | Other Transistors | 100 ns | 208ns | 552 ns | 1.043 μs | 3A | 8V | 20V | -650mV | 480mW Ta | 3A | -20V | P-Channel | 1651pF @ 15V | 38m Ω @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 17.6nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN10A07ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn10a07zta-datasheets-3608.pdf | 100V | 700mA | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 17 Weeks | 130.492855mg | No SVHC | 700mOhm | 3 | no | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | FLAT | 260 | 3 | 1 | Single | 40 | 2.6W | 1 | FET General Purpose Powers | 1.8 ns | 1.5ns | 2.1 ns | 4.1 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 1A | 100V | N-Channel | 138pF @ 50V | 700m Ω @ 1.5A, 10V | 4V @ 250μA | 1A Ta | 2.9nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI3469DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3469dvt1e3-datasheets-3277.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 30mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.14W | 1 | Other Transistors | 10 ns | 12ns | 12 ns | 50 ns | -6.7A | 20V | SILICON | SWITCHING | -3V | 1.14W Ta | 5A | P-Channel | -3 V | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 5A Ta | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDT1600N10ALZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdt1600n10alz-datasheets-3691.pdf | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 8 Weeks | 250.2mg | 4 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 10.42W | 1 | FET General Purpose Power | 7.4 ns | 15ns | 14.8 ns | 13.5 ns | 5.6A | 20V | SILICON | DRAIN | SWITCHING | 10.42W Tc | 0.16Ohm | 9.2 mJ | 100V | N-Channel | 225pF @ 50V | 160m Ω @ 2.8A, 10V | 2.8V @ 250μA | 5.6A Tc | 3.77nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDC637AN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fdc637an-datasheets-3115.pdf | 20V | 6.2A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 24mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 1.6W | 1 | FET General Purpose Power | 9 ns | 13ns | 13 ns | 26 ns | 6.2A | 8V | SILICON | SWITCHING | 820mV | 1.6W Ta | 20V | N-Channel | 1125pF @ 10V | 820 mV | 24m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 6.2A Ta | 16nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| FQN1N50CTA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqn1n50cta-datasheets-3617.pdf&product=onsemiconductor-fqn1n50cta-6826029 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 6 Weeks | 240mg | No SVHC | 6Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | BOTTOM | Single | 890mW | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 20 ns | 380mA | 30V | SILICON | SWITCHING | 4V | 890mW Ta 2.08W Tc | 40 pF | 500V | N-Channel | 195pF @ 25V | 6 Ω @ 190mA, 10V | 4V @ 250μA | 380mA Tc | 6.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| PSMN014-40YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn01440ys115-datasheets-2893.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 56W Tc | MO-235 | 183A | 21 mJ | N-Channel | 702pF @ 20V | 14m Ω @ 5A, 10V | 4V @ 1mA | 46A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN1004UFV-7 | Diodes Incorporated | $0.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn1004ufv7-datasheets-3004.pdf | 8-PowerVDFN | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 12V | 1.9W Ta | N-Channel | 2385pF @ 6V | 3.8m Ω @ 15A, 4.5V | 1V @ 250μA | 70A Tc | 47nC @ 8V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2324DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2324dst1ge3-datasheets-3632.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | 30 | 1.25W | 1 | FET General Purpose Power | 6 ns | 10ns | 6 ns | 10 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.25W Ta 2.5W Tc | 100V | N-Channel | 190pF @ 50V | 234m Ω @ 1.5A, 10V | 2.9V @ 250μA | 2.3A Tc | 10.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TSM4800N15CX6 RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | SOT-23-6 | 22 Weeks | NOT SPECIFIED | NOT SPECIFIED | 150V | 2.1W Tc | N-Channel | 332pF @ 10V | 480m Ω @ 1.1A, 10V | 3.5V @ 250μA | 1.4A Tc | 8nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA18ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sisa18adnt1ge3-datasheets-3655.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | Single | 19.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 10ns | 7 ns | 15 ns | 38.3A | -16V | SILICON | DRAIN | SWITCHING | 1.2V | 3.2W Ta 19.8W Tc | 70A | 0.0075Ohm | 5 mJ | 30V | N-Channel | 1000pF @ 15V | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 38.3A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDC653N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-fdc653n-datasheets-3085.pdf | 30V | 5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 30mg | No SVHC | 35MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 1.6W | 1 | FET General Purpose Power | 150°C | 7.5 ns | 12ns | 12 ns | 13 ns | 5A | 20V | 30V | SILICON | SWITCHING | 1.7V | 1.6W Ta | 5A | 30V | N-Channel | 350pF @ 15V | 1.7 V | 35m Ω @ 5A, 10V | 2V @ 250μA | 5A Ta | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSZ340N08NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsz340n08ns3gatma1-datasheets-3676.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | 8 | 2.1W | 1 | Not Qualified | S-PDSO-N5 | 3ns | 6A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 32W Tc | 23A | 92A | 0.034Ohm | 20 mJ | N-Channel | 630pF @ 40V | 34m Ω @ 12A, 10V | 3.5V @ 12μA | 6A Ta 23A Tc | 9.1nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4928NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-dlt100agevb-datasheets-8214.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 2.12W | 1 | FET General Purpose Power | S-PDSO-F5 | 9.2 ns | 25.5ns | 4.4 ns | 14 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 810mW Ta 20.8W Tc | 7.3A | 30V | N-Channel | 913pF @ 15V | 9m Ω @ 20A, 10V | 2.2V @ 250μA | 7.3A Ta 37A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK92150-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk9215055a118-datasheets-3706.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 125MOhm | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 3.6W | 1 | R-PSSO-G2 | 8 ns | 57ns | 13 ns | 16 ns | 11A | 15V | 55V | SILICON | DRAIN | SWITCHING | 36W Tc | TO-252AA | 44A | 16 mJ | 55V | N-Channel | 338pF @ 25V | 125m Ω @ 5A, 10V | 2V @ 1mA | 11A Tc | 6nC @ 5V | 4.5V 10V | ±15V |
