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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NDS0605 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-nds0605-datasheets-5943.pdf | -60V | -180mA | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.2mm | 3.05mm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 5Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 360mW | 1 | Other Transistors | 150°C | 5 ns | 6.3ns | 6.3 ns | 20 ns | 180mA | 20V | -60V | SILICON | SWITCHING | 60V | -1.7V | 360mW Ta | 5 pF | -60V | P-Channel | 79pF @ 25V | -1.7 V | 5 Ω @ 500mA, 10V | 3V @ 250μA | 180mA Ta | 2.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| PMF170XP,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-pmf170xp115-datasheets-5812.pdf | SC-70, SOT-323 | 3 | 4 Weeks | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 290mW Ta 1.67W Tc | 1A | 0.3Ohm | P-Channel | 280pF @ 10V | 200m Ω @ 1A, 4.5V | 1.15V @ 250μA | 1A Ta | 3.9nC @ 4.5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J56ACT,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-101, SOT-883 | 12 Weeks | 1.4A | 20V | 500mW Ta | P-Channel | 100pF @ 10V | 390m Ω @ 800mA, 4.5V | 1V @ 1mA | 1.4A Ta | 1.6nC @ 4.5V | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2004K-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmp2004k7-datasheets-5822.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 16 Weeks | 7.994566mg | No SVHC | 900mOhm | 3 | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 550mW | 1 | Other Transistors | 150°C | 8.5 ns | 4.3ns | 19.2 ns | 20.2 ns | -600mA | 8V | SILICON | SWITCHING | 20V | -1V | 550mW Ta | 0.6A | 20 pF | -20V | P-Channel | 175pF @ 16V | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 600mA Ta | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| DMN61D9U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d9u7-datasheets-5382.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | 3 | yes | EAR99 | Tin | e3 | NOT SPECIFIED | NOT SPECIFIED | 2.1 ns | 1.8ns | 8.4 ns | 14.4 ns | 380mA | 20V | 60V | 370mW Ta | N-Channel | 28.5pF @ 30V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 380mA Ta | 0.4nC @ 4.5V | 1.8V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTK3043NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntk3043nt1g-datasheets-5311.pdf | 20V | 225mA | SOT-723 | 1.25mm | 550μm | 850μm | Lead Free | 3 | 11 Weeks | No SVHC | 3.4Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | FLAT | 260 | 3 | Single | 40 | 440mW | 1 | FET General Purpose Power | 13 ns | 15ns | 15 ns | 94 ns | 285mA | 10V | SILICON | SWITCHING | 400mV | 310mW Ta | 0.255A | 20V | N-Channel | 11pF @ 10V | 3.4 Ω @ 10mA, 4.5V | 1.3V @ 250μA | 210mA Ta | 1.65V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||
| DMP32D4S-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp32d4s13-datasheets-6060.pdf | TO-236-3, SC-59, SOT-23-3 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | 260 | 30 | Other Transistors | Single | 30V | 370mW Ta | 0.3A | P-Channel | 51.16pF @ 15V | 2.4 Ω @ 300mA, 10V | 2.4V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SN7002NH6327XTSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-sn7002nh6327xtsa2-datasheets-5536.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | 3 | 1 | Single | 360mW | 1 | 150°C | 2.4 ns | 3.2ns | 3.6 ns | 5.3 ns | 200mA | 20V | 60V | SILICON | 1.4V | 360mW Ta | 0.2A | 5Ohm | 4.2 pF | 60V | N-Channel | 45pF @ 25V | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PMV65XPEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmv65xpear-datasheets-5469.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | DUAL | GULL WING | 260 | 3 | 30 | 1 | R-PDSO-G3 | 2.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 480mW Ta 6.25W Tc | TO-236AB | 0.078Ohm | P-Channel | 618pF @ 10V | 78m Ω @ 2.8A, 4.5V | 1.25V @ 250μA | 2.8A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FK3306010L | Panasonic Electronic Components | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fk3306010l-datasheets-4789.pdf | SOT-723 | 1.2mm | 470μm | 800μm | 3 | 10 Weeks | No SVHC | 3 | EAR99 | No | 8541.21.00.95 | e6 | Tin/Bismuth (Sn/Bi) | DUAL | FLAT | Single | 1 | 100 ns | 100 ns | 100mA | 12V | SILICON | SWITCHING | 1.2V | 100mW Ta | 0.1A | 15Ohm | 60V | N-Channel | 12pF @ 3V | 1.2 V | 12 Ω @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 2.5V 4V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| DMN2058UW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2058uw7-datasheets-5901.pdf | SC-70, SOT-323 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 500mW Ta | N-Channel | 281pF @ 10V | 42m Ω @ 3A, 10V | 1.2V @ 250μA | 3.5A Ta | 7.7nC @ 10V | 1.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bss123nh6327xtsa1-datasheets-5904.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 500mW | 1 | 150°C | 2.3 ns | 3.2ns | 22 ns | 7.4 ns | 190mA | 20V | 100V | SILICON | 500mW Ta | 6Ohm | 100V | N-Channel | 20.9pF @ 25V | 6 Ω @ 190mA, 10V | 1.8V @ 13μA | 190mA Ta | 0.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSS209PWH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bss209pwh6327xtsa1-datasheets-5655.pdf | -20V | -580mA | SC-70, SOT-323 | 2mm | 800μm | 1.25mm | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | 3 | Single | 300mW | 1 | 26 ns | 7ns | 4.6 ns | 6 ns | 580mA | 12V | -20V | SILICON | 20V | 300mW Ta | 0.55Ohm | 45 pF | P-Channel | 115pF @ 15V | 550m Ω @ 630mA, 4.5V | 1.2V @ 3.5μA | 630mA Tc | 1.3nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| DMN26D0UFB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn26d0ufb47-datasheets-5519.pdf&product=diodesincorporated-dmn26d0ufb47-6392377 | 3-XFDFN | 1.05mm | 350μm | 650μm | Lead Free | 3 | 18 Weeks | No SVHC | 10Ohm | 3 | yes | EAR99 | ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 3 | 1 | Single | 40 | 350mW | 1 | FET General Purpose Power | 3.8 ns | 7.9ns | 15.2 ns | 13.4 ns | 240mA | 10V | SILICON | DRAIN | SWITCHING | 20V | 20V | 350mW Ta | 0.24A | N-Channel | 14.1pF @ 15V | 3 Ω @ 100mA, 4.5V | 1.1V @ 250μA | 230mA Ta | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||
| NTA4151PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nta4151pt1g-datasheets-5315.pdf | -20V | -760mA | SC-75, SOT-416 | 1.65mm | 800μm | 900μm | Lead Free | 3 | 6 Weeks | No SVHC | 260mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 301mW | 1 | Other Transistors | 8 ns | 8.2ns | 8.2 ns | 29 ns | 760mA | 6V | SILICON | SWITCHING | 20V | -450mV | 301mW Tj | 0.76A | -20V | P-Channel | 156pF @ 5V | 360m Ω @ 350mA, 4.5V | 450mV @ 250μA | 760mA Tj | 2.1nC @ 4.5V | 1.8V 4.5V | ±6V | |||||||||||||||||||||||||||||||||
| BVSS138LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-bss138lt3g-datasheets-5501.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 9 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | GULL WING | 3 | Single | 225mW | 1 | FET General Purpose Powers | 20 ns | 20 ns | 200mA | 20V | SILICON | SWITCHING | 50V | 50V | 225mW Ta | 0.2A | 5 pF | N-Channel | 50pF @ 25V | 3.5 Ω @ 200mA, 5V | 1.5V @ 1mA | 200mA Ta | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| 2SK3018T106 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 100mA | SC-70, SOT-323 | 2mm | 800μm | 1.25mm | Lead Free | 3 | 18 Weeks | No SVHC | 13Ohm | 3 | yes | EAR99 | Copper, Silver, Tin | No | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | FET General Purpose Powers | 15 ns | 35ns | 35 ns | 80 ns | 100mA | 20V | 30V | SILICON | SWITCHING | 1.5V | 200mW Ta | 0.1A | 30V | N-Channel | 13pF @ 5V | 1.5 V | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||
| SSM3K56CT,L3F | Toshiba Semiconductor and Storage | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 3-XFDFN | 3 | 12 Weeks | 3 | unknown | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 800mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 500mW Ta | 0.8A | N-Channel | 55pF @ 10V | 235m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN53D0LQ-7 | Diodes Incorporated | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn53d0lq7-datasheets-5711.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 22 Weeks | EAR99 | HIGH RELIABILITY | 8541.21.00.95 | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 370mW Ta | 0.5A | N-Channel | 46pF @ 25V | 1.6 Ω @ 500mA, 10V | 1.5V @ 250μA | 500mA Ta | 0.6nC @ 4.5V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BVSS123LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-bss123lt1g-datasheets-5749.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | GULL WING | 260 | 3 | Single | 225mW | 1 | FET General Purpose Power | 20 ns | 40 ns | 170mA | 20V | SILICON | SWITCHING | 100V | 225mW Ta | 6Ohm | N-Channel | 20pF @ 25V | 6 Ω @ 100mA, 10V | 2.8V @ 1mA | 170mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| MMBF170 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/onsemiconductor-mmbf170-datasheets-5717.pdf | 60V | 500mA | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 930μm | 3.05mm | Lead Free | 8 Weeks | 30mg | No SVHC | 5Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | Tin | No | Single | 300mW | 1 | SOT-23 | 40pF | 10 ns | 10 ns | 500mA | 20V | 60V | 60V | 2.1V | 300mW Ta | 5Ohm | 60V | N-Channel | 40pF @ 10V | 2.1 V | 5Ohm @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| MMBF170-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-mmbf1707f-datasheets-5771.pdf | 60V | 500mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 14 Weeks | 7.994566mg | No SVHC | 5Ohm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 300mW | 1 | 150°C | 10 ns | 10 ns | 500mA | 20V | 60V | SILICON | SWITCHING | 2.1V | 300mW Ta | 0.5A | 5 pF | 70V | N-Channel | 40pF @ 10V | 2.1 V | 5 Ω @ 200mA, 10V | 3V @ 250μA | 500mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| DMP2120U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmp2120u7-datasheets-5779.pdf | TO-236-3, SC-59, SOT-23-3 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 800mW Ta | P-Channel | 487pF @ 20V | 62m Ω @ 4.2A, 4.5V | 1V @ 250μA | 3.8A Ta | 6.3nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS670S2LH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-bss670s2lh6327xtsa1-datasheets-5795.pdf | 55V | 540mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | 3 | 360mW | 1 | 9 ns | 25ns | 24 ns | 21 ns | 540mA | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 360mW Ta | 0.54A | 0.825Ohm | N-Channel | 75pF @ 25V | 650m Ω @ 270mA, 10V | 2V @ 2.7μA | 540mA Ta | 2.26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2SK3018-TP | Micro Commercial Co | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/microcommercialco-2sk3018tp-datasheets-5173.pdf | SC-70, SOT-323 | 3 | 22 Weeks | EAR99 | YES | DUAL | GULL WING | 260 | 10 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 200mW Ta | 0.1A | 8Ohm | N-Channel | 13pF @ 5V | 8 Ω @ 10mA, 4V | 1.5V @ 100μA | 100mA Ta | 2.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV160UP,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmv160up215-datasheets-5445.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | e3 | Tin (Sn) | NOT SPECIFIED | 3 | NOT SPECIFIED | 20V | 335mW Ta 2.17W Tc | P-Channel | 365pF @ 10V | 210m Ω @ 1.2A, 4.5V | 950mV @ 250μA | 1.2A Ta | 4nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138WH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bss138wh6327xtsa1-datasheets-5389.pdf | SC-70, SOT-323 | 2mm | 1mm | 1.25mm | Lead Free | 3 | 10 Weeks | 124.596154mg | 3 | EAR99 | Tin | No | 2A | e3 | 50V | Halogen Free | DUAL | GULL WING | 1 | Single | 500mW | 1 | 2.2 ns | 3ns | 8.2 ns | 6.7 ns | 280mA | 20V | 60V | SILICON | 1V | 500mW Ta | 4.2 pF | 60V | N-Channel | 43pF @ 25V | 3.5 Ω @ 200mA, 10V | 1.4V @ 26μA | 280mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSN20BKR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-bsn20bkr-datasheets-5193.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 7.9 ns | 8.4ns | 5.1 ns | 12.5 ns | 265mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 310mW Ta | 0.265A | 7 pF | N-Channel | 20.2pF @ 30V | 2.8 Ω @ 200mA, 10V | 1.4V @ 250μA | 265mA Ta | 0.49nC @ 4.5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NX7002BKHH | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-nx7002bkhh-datasheets-5410.pdf | 3-XFDFN | 8 Weeks | 60V | 380mW Ta 2.8W Tc | N-Channel | 22.2pF @ 30V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 350mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RE1J002YNTCL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-re1j002yntcl-datasheets-5422.pdf | SC-89, SOT-490 | Lead Free | 3 | 16 Weeks | 29.993795mg | 3 | EAR99 | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 5 ns | 8ns | 43 ns | 17 ns | 200mA | 8V | SILICON | SWITCHING | 150mW Ta | 0.2A | 2.8Ohm | 50V | N-Channel | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 200mA Ta | 0.9V 4.5V | ±8V |
