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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PMPB215ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-pmpb215eneax-datasheets-1274.pdf | 6-UDFN Exposed Pad | Lead Free | 6 | 8 Weeks | No | IEC-60134 | DUAL | 6 | 1 | S-PDSO-N6 | 3.5 ns | 2ns | 3 ns | 9.5 ns | 1.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 1.6W Ta 15.6W Tc | 7.6A | 0.23Ohm | N-Channel | 215pF @ 40V | 230m Ω @ 1.9A, 10V | 2.7V @ 250μA | 1.9A Ta | 7.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI1012X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si1012rt1ge3-datasheets-5803.pdf | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 3 | 14 Weeks | 29.993795mg | Unknown | 700mOhm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | FLAT | 260 | 3 | 1 | Single | 30 | 250mW | 1 | FET General Purpose Power | 5 ns | 5ns | 5 ns | 25 ns | 600mA | 6V | SILICON | SWITCHING | 900mV | 250mW Ta | 0.5A | 20V | N-Channel | 700m Ω @ 600mA, 4.5V | 900mV @ 250μA | 500mA Ta | 0.75nC @ 4.5V | 1.8V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||
| SI1077X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1077xt1ge3-datasheets-1165.pdf | SOT-563, SOT-666 | Lead Free | 6 | 14 Weeks | No SVHC | 6 | EAR99 | Tin | No | e3 | DUAL | FLAT | 260 | 30 | 1 | 1.75A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | -1V | 330mW Ta | 0.078Ohm | P-Channel | 965pF @ 10V | 78m Ω @ 1.8A, 4.5V | 1V @ 250μA | 31.1nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CPH6350-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-cph6350tlw-datasheets-1048.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 7 Weeks | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 6 | 1 | 1.6W | 7.4 ns | 27ns | 45 ns | 62 ns | 6A | 20V | 30V | 1.6W Ta | P-Channel | 600pF @ 10V | 43m Ω @ 3A, 10V | 6A Ta | 13nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2035UVTQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmp2035uvtq7-datasheets-1357.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 15 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta | 5.2A | 24A | 0.045Ohm | P-Channel | 2400pF @ 10V | 35m Ω @ 4A, 4.5V | 1.5V @ 250μA | 7.2A Ta | 23.1nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J511NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 6-WDFN Exposed Pad | 12 Weeks | unknown | 1.25W | 14A | 12V | P-Channel | 3350pF @ 6V | 9.1m Ω @ 4A, 8V | 1V @ 1mA | 14A Ta | 47nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3351-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-cph3351tlw-datasheets-0875.pdf | TO-236-3, SC-59, SOT-23-3 | 1.05mm | Lead Free | 3 | 7 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | Tin | not_compliant | e6 | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | 150°C | R-PDSO-G3 | 5.1 ns | 5.4ns | 19 ns | 34 ns | -1.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | -1.2V | 1W Ta | 0.25Ohm | -60V | P-Channel | 262pF @ 20V | 250m Ω @ 1A, 10V | 2.6V @ 1mA | 1.8A Ta | 6nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4435FDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-si4435fdyt1ge3-datasheets-1184.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 14 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.2W | 150°C | 9 ns | 23 ns | -8.6A | 20V | 30V | 4.8W Tc | -30V | P-Channel | 1500pF @ 15V | 19m Ω @ 9A, 10V | 2.2V @ 250μA | 12.6A Tc | 42nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2240UW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmp2240uw7-datasheets-1229.pdf | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | 3 | 16 Weeks | 6.010099mg | No SVHC | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | Other Transistors | 12.5 ns | 10.3ns | 10.3 ns | 46.5 ns | 1.5A | 12V | SILICON | SWITCHING | 20V | 20V | 250mW Ta | P-Channel | 320pF @ 16V | 150m Ω @ 2A, 4.5V | 1V @ 250μA | 1.5A Ta | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| FDY102PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdy102pz-datasheets-9609.pdf | SC-89, SOT-490 | 1.7mm | 780μm | 980μm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 500MOhm | 3 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 625mW | 1 | Other Transistors | 3.5 ns | 2.9ns | 2.9 ns | 23 ns | 830mA | 8V | SILICON | -700mV | 625mW Ta | 20V | P-Channel | 135pF @ 10V | 500m Ω @ 830mA, 4.5V | 1V @ 250μA | 830mA Ta | 3.1nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| FDN336P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdn336p-datasheets-1251.pdf | -20V | -1.3A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 940μm | 1.4mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 200mOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 500mW | 1 | Other Transistors | 7 ns | 12ns | 12 ns | 16 ns | 1.2A | 8V | -20V | SILICON | SWITCHING | 20V | -900mV | 500mW Ta | -20V | P-Channel | 330pF @ 10V | -900 mV | 200m Ω @ 1.3A, 4.5V | 1.5V @ 250μA | 1.3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SSM3K123TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 2mm | 700μm | 1.7mm | 3 | 12 Weeks | 3 | yes | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 4.2A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 500mW Ta | N-Channel | 1010pF @ 10V | 28m Ω @ 3A, 4V | 1V @ 1mA | 4.2A Ta | 13.6nC @ 4V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO6404 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/alphaomegasemiconductor-ao6404-datasheets-0132.pdf | SC-74, SOT-457 | 18 Weeks | 6 | 2W | 1 | 8.6A | 12V | 20V | 2W Ta | N-Channel | 1810pF @ 10V | 17m Ω @ 8.5A, 10V | 1V @ 250μA | 8.6A Ta | 17.9nC @ 4.5V | 1.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3429EDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3429edvt1ge3-datasheets-1062.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 21mOhm | EAR99 | YES | DUAL | GULL WING | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 4.2W Tc | MO-193AA | 8A | P-Channel | 4085pF @ 50V | 21m Ω @ 4A, 4.5V | 1V @ 250μA | 8A Ta 8A Tc | 118nC @ 10V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3150LW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn3150lw7-datasheets-1260.pdf | SC-70, SOT-323 | 2.15mm | 1mm | 1.3mm | Lead Free | 16 Weeks | 6.010099mg | No SVHC | 88mOhm | 3 | No | 1 | Single | 350mW | 1 | SOT-323 | 305pF | 1.6A | 12V | 28V | 350mW Ta | 88mOhm | 28V | N-Channel | 305pF @ 5V | 88mOhm @ 1.6A, 4.5V | 1.4V @ 250μA | 1.6A Ta | 88 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2318CX RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/taiwansemiconductorcorporation-tsm2318cxrfg-datasheets-1088.pdf | TO-236-3, SC-59, SOT-23-3 | 42 Weeks | SOT-23 | 40V | 1.25W Ta | N-Channel | 540pF @ 20V | 45mOhm @ 3.9A, 10V | 3V @ 250μA | 3.9A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTGS4141NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntgs4141nt1g-datasheets-1101.pdf | 30V | 5A | SOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 6 | 13 Weeks | No SVHC | 25mOhm | 6 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 6 | Single | 40 | 1W | 1 | FET General Purpose Power | 6 ns | 15ns | 4 ns | 18 ns | 7A | 20V | SILICON | SWITCHING | 3V | 500mW Ta | 5A | 30V | N-Channel | 560pF @ 24V | 25m Ω @ 7A, 10V | 3V @ 250μA | 3.5A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SSM3J351R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 12 Weeks | 60V | 2W Ta | P-Channel | 660pF @ 10V | 134m Ω @ 1A, 10V | 2V @ 1mA | 3.5A Ta | 15.1nC @ 10V | 4V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN65D8LW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn65d8lw7-datasheets-1169.pdf | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Lead Free | 3 | 16 Weeks | 6.010099mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 1 | FET General Purpose Power | 2.7 ns | 2.8ns | 7.3 ns | 12.6 ns | 300mA | 20V | SILICON | SWITCHING | 60V | 60V | 300mW Ta | 0.26A | 4Ohm | N-Channel | 22pF @ 25V | 3 Ω @ 115mA, 10V | 2V @ 250μA | 300mA Ta | 0.87nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| RTR040N03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | SC-96 | Lead Free | 3 | 15 Weeks | No SVHC | 48MOhm | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 10 ns | 18ns | 19 ns | 37 ns | 4A | 12V | 30V | SILICON | SWITCHING | 1.5V | 1W Ta | 4A | 30V | N-Channel | 475pF @ 10V | 1.5 V | 48m Ω @ 4A, 4.5V | 1.5V @ 1mA | 4A Ta | 8.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| DMN3051L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn3051l7-datasheets-0898.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | 3 | 15 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 1.4W | 1 | 3.4 ns | 6.2ns | 2.8 ns | 13.9 ns | 5.8A | 20V | SILICON | SWITCHING | 700mW Ta | 4.5A | 30V | N-Channel | 424pF @ 5V | 38m Ω @ 5.8A, 10V | 2.2V @ 250μA | 5.8A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CPH3362-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-cph3362tlw-datasheets-0966.pdf | TO-236-3, SC-59, SOT-23-3 | 1.05mm | Lead Free | 7 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | not_compliant | e6 | 1 | 1W | Other Transistors | 150°C | 3.9 ns | 3.4ns | 12 ns | 28 ns | -700mA | 20V | Single | 100V | 1W Ta | 0.7A | -100V | P-Channel | 142pF @ 20V | 1.7 Ω @ 700mA, 10V | 2.6V @ 1mA | 700mA Ta | 3.7nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN1019UVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn1019uvt7-datasheets-0915.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 10.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1.73W Ta | 70A | 0.01Ohm | 4.7 mJ | N-Channel | 2588pF @ 10V | 10m Ω @ 9.7A, 4.5V | 800mV @ 250μA | 10.7A Ta | 50.4nC @ 8V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3440ADV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si3440advt1ge3-datasheets-1019.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 150V | 3.6W Tc | N-Channel | 80pF @ 75V | 380m Ω @ 1.5A, 10V | 4V @ 250μA | 2.2A Tc | 4nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1416EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1416edht1ge3-datasheets-1033.pdf | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 6 | EAR99 | unknown | DUAL | GULL WING | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | 20 ns | 60ns | 45 ns | 25 ns | 3.9A | 12V | SILICON | SWITCHING | 2.8W Tc | 0.058Ohm | 30V | N-Channel | 58m Ω @ 3.1A, 10V | 1.4V @ 250μA | 3.9A Tc | 12nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| DMN3200U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmn3200u7-datasheets-1036.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | 3 | 16 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 650mW | 1 | FET General Purpose Powers | 2.2A | 8V | SILICON | SWITCHING | 650mW Ta | 0.09Ohm | 30V | N-Channel | 290pF @ 10V | 90m Ω @ 2.2A, 4.5V | 1V @ 250μA | 2.2A Ta | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| DMP3130LQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmp3130lq7-datasheets-1052.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 15 Weeks | No SVHC | yes | EAR99 | e3 | Matte Tin (Sn) | 260 | 30 | 3.5A | 30V | 700mW Ta | P-Channel | 864pF @ 15V | 77m Ω @ 4.2A, 10V | 1.3V @ 250μA | 3.5A Ta | 24nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTGS4111PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntgs4111pt1g-datasheets-1058.pdf | -30V | -4.7A | SOT-23-6 | 3.1mm | 1mm | 1.7mm | Lead Free | 6 | 9 Weeks | 38MOhm | 6 | ACTIVE (Last Updated: 4 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 6 | Single | 40 | 1.25W | 1 | Other Transistors | 9 ns | 9ns | 9 ns | 38 ns | 4.7A | 20V | SILICON | SWITCHING | 30V | 630mW Ta | 3.7A | -30V | P-Channel | 750pF @ 15V | 60m Ω @ 3.7A, 10V | 3V @ 250μA | 2.6A Ta | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| ZXMN2F34FHTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-zxmn2f34fhta-datasheets-1022.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 16 Weeks | 7.994566mg | No SVHC | 60mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.4W | 1 | FET General Purpose Power | 2.65 ns | 4.2ns | 4.2 ns | 9.9 ns | 4A | 12V | SILICON | SWITCHING | 800mV | 950mW Ta | 4A | 20V | N-Channel | 277pF @ 10V | 60m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 3.4A Ta | 2.8nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| CSD13201W10 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 4-UFBGA, DSBGA | 0m | 625μm | 0m | Lead Free | 4 | 6 Weeks | 4 | ACTIVE (Last Updated: 5 days ago) | yes | 650μm | EAR99 | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | CSD13201 | 1 | Single | NOT SPECIFIED | 1.2W | 1 | 3.9 ns | 5.9ns | 9.7 ns | 14.4 ns | 1.6A | 8V | SILICON | SWITCHING | 1.2W Ta | 20.2A | 0.053Ohm | 22.6 pF | 12V | N-Channel | 462pF @ 6V | 34m Ω @ 1A, 4.5V | 1.1V @ 250μA | 1.6A Ta | 2.9nC @ 4.5V | 1.8V 4.5V | ±8V |
