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FDN336P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDN336P
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 6001
- Description: FDN336P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 200mOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -1.3A |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 1.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 1.2A |
| Threshold Voltage | -900mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Dual Supply Voltage | -20V |
| Nominal Vgs | -900 mV |
| Height | 940μm |
| Length | 2.92mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDN336P Description
FDN336P is a type of P-channel specified PowerTrench? MOSFET provided by ON Semiconductor based on its advanced power trench process which makes this device capable of minimizing on-state resistance and maintaining a low gate charge. It can be widely used for portable electronics applications, including load switching, power management, DC-DC conversion, and more.
FDN336P Features
Extremely low RDS(ON)
High-performance trench technology
Low gate charge
Low on-state resistance
Available in the SuperSOT?-3 package
FDN336P Applications
Load switching
DC-DC conversion
Power management
Battery charging circuits
