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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD23382F4 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | BOTTOM | NO LEAD | 260 | CSD23382 | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 25ns | 41 ns | 66 ns | 3.5A | 8V | SILICON | SWITCHING | 12V | 500mW Ta | P-Channel | 235pF @ 6V | 76m Ω @ 500mA, 4.5V | 1.1V @ 250μA | 3.5A Ta | 1.35nC @ 6V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| CPH3457-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-cph3457tlw-datasheets-0368.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | Tin | not_compliant | 1 | 5.1 ns | 10ns | 36 ns | 137 ns | 3A | 12V | 30V | 1W Ta | N-Channel | 265pF @ 10V | 95m Ω @ 1.5A, 4.5V | 1.3V @ 1mA | 3A Ta | 3.5nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-2n7002trpbfree-datasheets-0393.pdf | TO-236-3, SC-59, SOT-23-3 | 42 Weeks | YES | FET General Purpose Power | Single | 60V | 350mW Ta | 0.115A | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | 5V 10V | 40V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO6405 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | SC-74, SOT-457 | 6 | 16 Weeks | 6 | yes | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 2W | 1 | Other Transistors | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2W Ta | 5A | 0.052Ohm | P-Channel | 840pF @ 15V | 52m Ω @ 5A, 10V | 3V @ 250μA | 5A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTR4101PT1H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntr4101pt1g-datasheets-3810.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 2 Weeks | 3 | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | Single | 1 | Other Transistors | 1.8A | SILICON | SWITCHING | 20V | 20V | 420mW Ta | 2.4A | 0.085Ohm | P-Channel | 675pF @ 10V | 85m Ω @ 1.6A, 4.5V | 1.2V @ 250μA | 1.8A Ta | 8.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J214FE(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | SOT-563, SOT-666 | 12 Weeks | EAR99 | YES | Other Transistors | Single | 30V | 500mW Ta | 3.6A | P-Channel | 560pF @ 15V | 50m Ω @ 3A, 10V | 1.2V @ 1mA | 3.6A Ta | 7.9nC @ 4.5V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM850N06CX RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/taiwansemiconductorcorporation-tsm850n06cxrfg-datasheets-0464.pdf | TO-236-3, SC-59, SOT-23-3 | 25 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.7W Tc | N-Channel | 529pF @ 30V | 85m Ω @ 2.3A, 10V | 2.5V @ 250μA | 3A Tc | 9.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6H19NU,LF | Toshiba Semiconductor and Storage | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 6-UDFN Exposed Pad | 2mm | 750μm | 2mm | 12 Weeks | 6 | 1 | 6-UDFN (2x2) | 130pF | 2A | 3.6V | 40V | 1W Ta | 160mOhm | N-Channel | 130pF @ 10V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 2A Ta | 2.2nC @ 4.2V | 185 mΩ | 1.8V 8V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E100BNTB | ROHM Semiconductor | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-PowerVDFN | Lead Free | 5 | 20 Weeks | No SVHC | 7.7mOhm | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 2W Ta | 40A | N-Channel | 1100pF @ 15V | 10.4m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMG6402LDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg6402ldm7-datasheets-0455.pdf | SOT-23-6 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 6 | 15 Weeks | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.12W | 1 | FET General Purpose Power | 3.41 ns | 6.18ns | 2.84 ns | 13.92 ns | 5.3A | 20V | SILICON | SWITCHING | 30V | 30V | 1.12W Ta | 0.027Ohm | N-Channel | 404pF @ 15V | 27m Ω @ 7A, 10V | 2V @ 250μA | 5.3A Ta | 9.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BST82,235 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-bst82215-datasheets-0282.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 6 Weeks | 3 | EAR99 | Tin | 8541.21.00.95 | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 30 | 830mW | 1 | 190mA | 20V | 100V | SILICON | SWITCHING | 830mW Tc | 0.175A | 6 pF | 100V | N-Channel | 40pF @ 10V | 10 Ω @ 150mA, 5V | 2V @ 1mA | 190mA Ta | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2244TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlml2244trpbf-datasheets-0293.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 95MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 1.3W | 1 | Other Transistors | 7 ns | 12ns | 25 ns | 34 ns | 4.3A | 12V | SILICON | SWITCHING | 20V | -1.1V | 1.3W Ta | 32 ns | -20V | P-Channel | 570pF @ 16V | -1.1 V | 54m Ω @ 4.3A, 4.5V | 1.1V @ 10μA | 4.3A Ta | 6.9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| BST82,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-bst82215-datasheets-0282.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 3 | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | 1 | 190mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 80V | 830mW Tc | 0.175A | 6 pF | N-Channel | 40pF @ 10V | 10 Ω @ 150mA, 5V | 2V @ 1mA | 190mA Ta | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3030SN-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmp3030sn7-datasheets-9880.pdf | TO-236-3, SC-59, SOT-23-3 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 3 | 15 Weeks | 7.994566mg | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 500mW | 1 | Other Transistors | 10 ns | 25ns | 25 ns | 25 ns | 700mA | 20V | SILICON | SWITCHING | 30V | 500mW Ta | 0.7A | 0.45Ohm | -30V | P-Channel | 160pF @ 10V | 250m Ω @ 400mA, 10V | 3V @ 1mA | 700mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTS4173PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nts4173pt1g-datasheets-0305.pdf | SC-70, SOT-323 | 2.2mm | 900μm | 1.35mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 3 | Single | 350mW | 1 | Other Transistors | 7.7 ns | 6.7ns | 7.1 ns | 19.9 ns | -1.2A | 12V | SILICON | SWITCHING | 30V | -1.15V | 290mW Ta | -30V | P-Channel | 430pF @ 15V | -1.15 V | 150m Ω @ 1.2A, 10V | 1.5V @ 250μA | 1.2A Ta | 10.1nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| NDS352AP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-nds352ap-datasheets-0121.pdf&product=onsemiconductor-nds352ap-6387327 | -30V | -900mA | TO-236-3, SC-59, SOT-23-3 | 1.22mm | 3.05mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 500mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 500mW | 1 | Other Transistors | 150°C | 8 ns | 16ns | 16 ns | 35 ns | 900mA | 20V | -30V | SILICON | SWITCHING | 30V | -800mV | 500mW Ta | 0.9A | -30V | P-Channel | 135pF @ 15V | -1.7 V | 300m Ω @ 1A, 10V | 2.5V @ 250μA | 900mA Ta | 3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| DMN3026LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn3026lvt7-datasheets-0152.pdf | SOT-23-6 Thin, TSOT-23-6 | 643pF | 6 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1 | R-PDSO-G6 | 2.2 ns | 2.5ns | 3 ns | 12.1 ns | 6.6A | 20V | SILICON | SWITCHING | 1.2W Ta | 0.023Ohm | 30V | N-Channel | 643pF @ 15V | 23m Ω @ 6.5A, 10V | 2V @ 250μA | 6.6A Ta | 12.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AON7410 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerVDFN | 16 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Power | 24A | 20V | Single | 30V | 3.1W Ta 20W Tc | N-Channel | 660pF @ 15V | 20m Ω @ 8A, 10V | 2.5V @ 250μA | 9.5A Ta 24A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2374DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si2374dst1ge3-datasheets-0206.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | 30 | 960mW | 1 | 150°C | 10 ns | 22ns | 9 ns | 16 ns | 4.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 960mW Ta 1.7W Tc | 5.9A | 20V | N-Channel | 735pF @ 10V | 30m Ω @ 4A, 4.5V | 1V @ 250μA | 4.5A Ta 5.9A Tc | 20nC @ 10V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| NTJS3151PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntjs3151pt1g-datasheets-9799.pdf | -12V | -3.3A | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 19 Weeks | 45mOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 6 | Single | 40 | 625mW | 1 | Other Transistors | 860 ps | 1.5ns | 1.5 ns | 3.5 ns | 3.3A | 12V | SILICON | SWITCHING | 625mW Ta | 2.7A | -12V | P-Channel | 850pF @ 12V | 60m Ω @ 3.3A, 4.5V | 1.2V @ 100μA | 2.7A Ta | 8.6nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| NTS2101PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-nts2101pt1g-datasheets-0218.pdf | -8V | -1.4A | SC-70, SOT-323 | 2.2mm | 900μm | 1.35mm | Lead Free | 3 | 4 Weeks | No SVHC | 65MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 290mW | 1 | Other Transistors | 6.2 ns | 15ns | 15 ns | 26 ns | 1.4A | 8V | SILICON | SWITCHING | -700mV | 290mW Ta | -8V | P-Channel | 640pF @ 8V | -700 mV | 100m Ω @ 1A, 4.5V | 700mV @ 250μA | 1.4A Ta | 6.4nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| IRLML2246TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irlml2246trpbf-datasheets-0237.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 236MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 1.3W | 1 | Other Transistors | 5.3 ns | 7.7ns | 16 ns | 26 ns | 2.6A | 12V | SILICON | SWITCHING | 20V | -1.1V | 1.3W Ta | 26 ns | -20V | P-Channel | 220pF @ 16V | -1.1 V | 135m Ω @ 2.6A, 4.5V | 1.1V @ 10μA | 2.6A Ta | 2.9nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI2308CDS-T1-GE3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2308cdst1ge3-datasheets-0234.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 10 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.6W Tc | 2.6A | 0.144Ohm | N-Channel | 105pF @ 30V | 144m Ω @ 1.9A, 10V | 3V @ 250μA | 2.6A Tc | 4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS306NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bss306nh6327xtsa1-datasheets-0221.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | PG-SOT23 | e3 | Halogen Free | DUAL | GULL WING | 3 | 1 | 500mW | 1 | 150°C | 4.4 ns | 2.3ns | 8.3 ns | 2.3A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 1.2V | 500mW Ta | 0.057Ohm | 30V | N-Channel | 275pF @ 15V | 57m Ω @ 2.3A, 10V | 2V @ 11μA | 2.3A Ta | 1.5nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDC637BNZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdc637bnz-datasheets-0249.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 13 Weeks | 36mg | No SVHC | 24MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 1 | Single | 800mW | 1 | FET General Purpose Power | 150°C | 8 ns | 6ns | 6 ns | 22 ns | 6.2A | 12V | SILICON | SWITCHING | 800mV | 1.6W Ta | 20V | N-Channel | 895pF @ 10V | 800 mV | 24m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 6.2A Ta | 12nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| DMN3053L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn3053l7-datasheets-0286.pdf | TO-236-3, SC-59, SOT-23-3 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | 260 | 30 | 4A | 30V | 760mW Ta | N-Channel | 676pF @ 15V | 45m Ω @ 4A, 10V | 1.4V @ 250μA | 4A Ta | 17.2nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS119NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bss119nh6327xtsa1-datasheets-9630.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | 260 | 1 | Single | 40 | 500mW | 1 | FET General Purpose Power | 150°C | 2.7 ns | 3.3ns | 18.8 ns | 7 ns | 190mA | 20V | 100V | SILICON | 500mW Ta | 6Ohm | 100V | N-Channel | 20.9pF @ 25V | 6 Ω @ 190mA, 10V | 2.3V @ 13μA | 190mA Ta | 0.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMN2005LPK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn2005lpk7-datasheets-0116.pdf | 3-UFDFN | 1mm | 470μm | 600μm | 3 | 16 Weeks | No SVHC | 3 | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | NO LEAD | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 440mA | 10V | SILICON | DRAIN | SWITCHING | 450mW Ta | 0.4A | 20V | N-Channel | 1.5 Ω @ 10mA, 4V | 1.2V @ 100μA | 440mA Ta | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSS123TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-bss123ta-datasheets-0099.pdf | 100V | 170mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 6Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 300mW | 1 | 150°C | 8 ns | 10ns | 10 ns | 13 ns | 170mA | 20V | SILICON | SWITCHING | 1.4V | 360mW Ta | 4 pF | 100V | N-Channel | 20pF @ 25V | 2.2 V | 6 Ω @ 100mA, 10V | 2V @ 1mA | 170mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SSM6K217FE,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 6 | ES6 | 130pF | 13 ns | 8 ns | 1.8A | 12V | 40V | 500mW Ta | N-Channel | 130pF @ 10V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.8A Ta | 1.1nC @ 4.2V | 195 mΩ | 1.8V 8V | ±12V |
