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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM3K2615R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 12 Weeks | 2A | 60V | 1W Ta | N-Channel | 150pF @ 10V | 300m Ω @ 1A, 10V | 2V @ 1mA | 2A Ta | 3.3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN10H220L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn10h220l7-datasheets-6220.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 3 | 23 Weeks | 1.437803g | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | DMN10H220 | 1 | Single | 1.3W | 1 | 150°C | R-PDSO-G3 | 6.8 ns | 8.2ns | 3.6 ns | 7.9 ns | 1.4A | 16V | SILICON | SWITCHING | 1.3W Ta | 0.22Ohm | 100V | N-Channel | 401pF @ 25V | 220m Ω @ 1.6A, 10V | 2.5V @ 250μA | 1.4A Ta | 8.3nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| SI2333CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si2333cdst1e3-datasheets-6790.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 1.437803g | No SVHC | 35mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 13 ns | 35ns | 35 ns | 45 ns | 5.1A | 8V | SILICON | SWITCHING | 12V | -400mV | 1.25W Ta 2.5W Tc | -12V | P-Channel | 1225pF @ 6V | 35m Ω @ 5.1A, 4.5V | 1V @ 250μA | 7.1A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SI2308BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2308bdst1ge3-datasheets-6743.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 3 | yes | EAR99 | unknown | 8541.29.00.95 | e4 | Silver (Ag) | YES | DUAL | GULL WING | 260 | 3 | 30 | 1.09W | 1 | FET General Purpose Powers | Not Qualified | 2.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.09W Ta 1.66W Tc | 1.9A | 0.156Ohm | N-Channel | 190pF @ 30V | 156m Ω @ 1.9A, 10V | 3V @ 250μA | 2.3A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDC602P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc602p-datasheets-9352.pdf | -20V | -5.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | No SVHC | 35MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 55A | e3 | 20V | DUAL | GULL WING | 1 | Single | 1.6W | 1 | Other Transistors | 150°C | 15 ns | 11ns | 11 ns | 57 ns | -5.5A | 12V | -20V | SILICON | SWITCHING | -900mV | 1.6W Ta | -20V | P-Channel | 1456pF @ 10V | -900 mV | 35m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 5.5A Ta | 20nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| ZXMN3A01FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn3a01fta-datasheets-6649.pdf | 30V | 1.8A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 120mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 806mW | 1 | FET General Purpose Power | 1.7 ns | 2.3ns | 2.3 ns | 6.6 ns | 2A | 20V | 30V | SILICON | SWITCHING | 625mW Ta | 30V | N-Channel | 190pF @ 25V | 1 V | 120m Ω @ 2.5A, 10V | 1V @ 250μA | 1.8A Ta | 3.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| ZXMN6A07FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zxmn6a07fta-datasheets-6652.pdf | 60V | 1.2A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.1mm | 1.4mm | Lead Free | 3 | 19 Weeks | 7.994566mg | No SVHC | 400mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 806mW | 1 | FET General Purpose Powers | 150°C | 1.8 ns | 1.4ns | 1.4 ns | 4.9 ns | 1.2A | 20V | 60V | SILICON | SWITCHING | 3V | 625mW Ta | 60V | N-Channel | 166pF @ 40V | 3 V | 250m Ω @ 1.8A, 10V | 3V @ 250μA | 1.2A Ta | 3.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IRLML2502TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlml2502trpbf-datasheets-5844.pdf | 20V | 4.2A | TO-236-3, SC-59, SOT-23-3 | 2.794mm | 1.016mm | 3.05mm | Lead Free | 3 | 12 Weeks | No SVHC | 45mOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 7.5 ns | 10ns | 26 ns | 54 ns | 4.2A | 12V | 20V | SILICON | SWITCHING | 1.2V | 1.25W Ta | 20V | N-Channel | 740pF @ 15V | 1.2 V | 45m Ω @ 4.2A, 4.5V | 1.2V @ 250μA | 4.2A Ta | 12nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||
| SIA440DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia440djt1ge3-datasheets-6673.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 1 | Single | 1 | S-PDSO-N3 | 12 ns | 32ns | 5 ns | 23 ns | 12A | 12V | SILICON | DRAIN | SWITCHING | 3.5W Ta 19W Tc | 50A | 40V | N-Channel | 700pF @ 20V | 26m Ω @ 9A, 10V | 1.4V @ 250μA | 12A Tc | 21.5nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| DMN3730UFB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn3730ufb47-datasheets-6680.pdf | 3-XFDFN | 1.08mm | 350μm | 675μm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | Gold | e4 | BOTTOM | NO LEAD | 260 | 3 | 1 | 40 | 690mW | 1 | FET General Purpose Powers | Not Qualified | 3.5 ns | 2.8ns | 13 ns | 38 ns | 910mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 450mV | 470mW Ta | 0.75A | 0.46Ohm | 30V | N-Channel | 64.3pF @ 25V | 460m Ω @ 200mA, 4.5V | 950mV @ 250μA | 750mA Ta | 1.6nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| ZXM61N03FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxm61n03fta-datasheets-6709.pdf | 30V | 1.2A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 220mOhm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 806mW | 1 | FET General Purpose Power | 1.9 ns | 2.5ns | 2.5 ns | 5.8 ns | 1.4A | 20V | 30V | SILICON | SWITCHING | 625mW Ta | 30V | N-Channel | 150pF @ 25V | 1 V | 220m Ω @ 910mA, 10V | 1V @ 250μA | 1.4A Ta | 4.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SSM3J130TU,LF | Toshiba Semiconductor and Storage | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 3-SMD, Flat Lead | 12 Weeks | 3 | No | 25 ns | 133 ns | 4.4A | 8V | 20V | 500mW Ta | P-Channel | 1800pF @ 10V | 25.8m Ω @ 4A, 4.5V | 1V @ 1mA | 4.4A Ta | 24.8nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN5618P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fdn5618p-datasheets-5999.pdf | -60V | -1.25A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.22mm | 1.4mm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 170mOhm | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 500mW | 1 | Other Transistors | 150°C | 6.5 ns | 8ns | 8 ns | 16.5 ns | 1.2A | 20V | -60V | SILICON | SWITCHING | 60V | -1.6V | 500mW Ta | -60V | P-Channel | 430pF @ 30V | 20 V | 170m Ω @ 1.25A, 10V | 3V @ 250μA | 1.25A Ta | 13.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| SI2312BDS-T1-GE3 | Vishay Siliconix | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 30 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 8V | 750mW Ta | 20V | N-Channel | 8 V | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| FDY300NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdy300nz-datasheets-6567.pdf | SC-89, SOT-490 | 1.7mm | 780μm | 980μm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 700MOhm | 3 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | ESD PROTECTION | Tin | No | e3 | DUAL | FLAT | Single | 625mW | 1 | FET General Purpose Power | 6 ns | 8ns | 8 ns | 8 ns | 600mA | 12V | 20V | SILICON | SWITCHING | 1V | 625mW Ta | 0.6A | 20V | N-Channel | 60pF @ 10V | 1 V | 700m Ω @ 600mA, 4.5V | 1.3V @ 250μA | 600mA Ta | 1.1nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| SI2302DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2302ddst1ge3-datasheets-5982.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 710mW | 1 | FET General Purpose Powers | 8 ns | 7ns | 7 ns | 30 ns | 2.6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 710mW Ta | 0.057Ohm | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.9A Tj | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| FDC638APZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdc638apz-datasheets-6498.pdf | -12V | -4.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 13 Weeks | 36mg | No SVHC | 43MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1.6W | 1 | Other Transistors | Not Qualified | 150°C | 6 ns | 20ns | 20 ns | 48 ns | -4.5A | 12V | -20V | SILICON | 20V | -800mV | 1.6W Ta | 20A | -20V | P-Channel | 1000pF @ 10V | 43m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 12nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||
| AON7522E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerVDFN | 18 Weeks | 34A | 30V | 3.1W Ta 31W Tc | N-Channel | 1540pF @ 15V | 4m Ω @ 20A, 10V | 2.2V @ 250μA | 21A Ta 34A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC658AP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdc658ap-datasheets-6321.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 900μm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 50MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 1.6W | 1 | 150°C | R-PDSO-G3 | 7 ns | 12ns | 12 ns | 16 ns | 4mA | 25V | -30V | SILICON | SWITCHING | 30V | -1.8V | 1.6W Ta | 4A | 90 pF | -30V | P-Channel | 470pF @ 15V | -1.8 V | 50m Ω @ 4A, 10V | 3V @ 250μA | 4A Ta | 8.1nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||
| SI1302DL-T1-E3 | Vishay Siliconix | $0.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1302dlt1e3-datasheets-6317.pdf | SC-70, SOT-323 | 2mm | 1mm | 1.25mm | Lead Free | 3 | 14 Weeks | 6.208546mg | No SVHC | 480mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 310mW | 1 | FET General Purpose Power | Not Qualified | 5 ns | 8ns | 7 ns | 8 ns | 640mA | 20V | SILICON | 1V | 280mW Ta | 0.6A | 30V | N-Channel | 3 V | 480m Ω @ 600mA, 10V | 3V @ 250μA | 600mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| DMP6350S-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmp6350s7-datasheets-6401.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 3 | 17 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 720mW | 1 | 150°C | R-PDSO-G3 | 3.6 ns | 12.3 ns | -1.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 720mW Ta | 0.35Ohm | -60V | P-Channel | 206pF @ 30V | 350m Ω @ 900mA, 10V | 3V @ 250μA | 1.5A Ta | 4.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSS139H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-bss139h6327xtsa1-datasheets-6409.pdf | TO-236-3, SC-59, SOT-23-3 | 3.05mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | Halogen Free | DUAL | GULL WING | 3 | 1 | 360mW | 1 | 5.4ns | 40mA | 20V | 250V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | -1.4V | 360mW Ta | N-Channel | 76pF @ 25V | -1.4 V | 14 Ω @ 100μA, 10V | 1V @ 56μA | 100mA Ta | 3.5nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| ZVN3320FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/diodesincorporated-zvn3320fta-datasheets-6432.pdf | 200V | 60mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 25Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 330mW | 1 | FET General Purpose Power | 5 ns | 7ns | 7 ns | 6 ns | 60mA | 20V | SILICON | 1V | 330mW Ta | 0.06A | 1A | 5 pF | 200V | N-Channel | 45pF @ 25V | 25 Ω @ 100mA, 10V | 3V @ 1mA | 60mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NDS332P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-nds332p-datasheets-5410.pdf&product=onsemiconductor-nds332p-6385980 | -20V | -1A | TO-236-3, SC-59, SOT-23-3 | 3.05mm | Lead Free | 3 | 10 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE, ESD RATED | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 500mW | 1 | Other Transistors | Not Qualified | 1A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 500mW Ta | 1A | -20V | P-Channel | 195pF @ 10V | 300m Ω @ 1.1A, 4.5V | 1V @ 250μA | 1A Ta | 5nC @ 4.5V | 2.7V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI1013R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si1013rt1ge3-datasheets-5895.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 1.2Ohm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 150mW | 1 | Other Transistors | 5 ns | 9ns | 9 ns | 35 ns | -400mA | 6V | SILICON | SWITCHING | 20V | -450mV | 150mW Ta | -20V | P-Channel | 1.2 Ω @ 350mA, 4.5V | 450mV @ 250μA (Min) | 350mA Ta | 1.5nC @ 4.5V | 1.8V 4.5V | ±6V | |||||||||||||||||||||||||||||||||
| SI1302DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1302dlt1e3-datasheets-6317.pdf | SC-70, SOT-323 | 3 | 14 Weeks | 6.208546mg | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 5 ns | 8ns | 7 ns | 8 ns | 600mA | 20V | SILICON | 30V | 280mW Ta | 0.6A | 0.48Ohm | N-Channel | 480m Ω @ 600mA, 10V | 3V @ 250μA | 600mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK98150-55A/CUF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9815055acuf-datasheets-6521.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 16 Weeks | 4 | Tin | YES | DUAL | GULL WING | 260 | 4 | 30 | 1 | 8 ns | 57ns | 13 ns | 16 ns | 5.5A | 15V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8W Tc | 22A | 0.161Ohm | 22 mJ | N-Channel | 320pF @ 25V | 137m Ω @ 5A, 10V | 2V @ 1mA | 5.5A Tc | 5.3nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| DMN1019UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmn1019ufde7-datasheets-6511.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | 14 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | Gold | No | e4 | DUAL | 260 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PDSO-N3 | 7.6 ns | 22.2ns | 16.8 ns | 57.6 ns | 11A | 8V | SILICON | DRAIN | SWITCHING | 12V | 690mW Ta | N-Channel | 2425pF @ 10V | 10m Ω @ 9.7A, 4.5V | 800mV @ 250μA | 11A Ta | 50.6nC @ 8V | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SI2312BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2312bdst1e3-datasheets-6507.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 9 ns | 30ns | 10 ns | 35 ns | 5A | 8V | 20V | SILICON | SWITCHING | 850mV | 750mW Ta | 20V | N-Channel | 450 mV | 31m Ω @ 5A, 4.5V | 850mV @ 250μA | 3.9A Ta | 12nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| BSR92PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsr92ph6327xtsa1-datasheets-6356.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 10 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | AEC-Q101 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 6.4 ns | 6.3ns | 71 ns | 75 ns | 140mA | 20V | -250V | SILICON | SINGLE WITH BUILT-IN DIODE | 250V | -1.5V | 500mW Tc | 0.14A | 8 pF | P-Channel | 109pF @ 25V | 11 Ω @ 140mA, 10V | 1V @ 130μA | 140mA Ta | 4.8nC @ 10V | 2.8V 10V | ±20V |
