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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLML0060TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlml0060trpbf-datasheets-5822.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 92MOhm | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Power | Not Qualified | 150°C | 5.4 ns | 6.3ns | 4.2 ns | 6.8 ns | 2.7A | 16V | SILICON | SWITCHING | 2.5V | 1.25W Ta | 21 ns | 60V | N-Channel | 290pF @ 25V | 2.5 V | 92m Ω @ 2.7A, 10V | 2.5V @ 25μA | 2.7A Ta | 2.5nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| DMN3730U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn3730u7-datasheets-5832.pdf&product=diodesincorporated-dmn3730u7-6385875 | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 450mW | 1 | FET General Purpose Power | 150°C | 3.5 ns | 2.8ns | 13 ns | 38 ns | 750mA | 8V | SILICON | SWITCHING | 450mW Ta | 0.75A | 0.46Ohm | 30V | N-Channel | 64.3pF @ 25V | 460m Ω @ 200mA, 4.5V | 950mV @ 250μA | 750mA Ta | 1.6nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| SSM3J328R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-3 Flat Leads | 3 | 16 Weeks | 3 | No | DUAL | 1 | Single | 2W | 1 | 32 ns | 107 ns | 6A | 8V | SILICON | SWITCHING | 20V | 1W Ta | 6A | 24A | 0.0298Ohm | -20V | P-Channel | 840pF @ 10V | 29.8m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2035UVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp2035uvt7-datasheets-5891.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 900μm | 1.6mm | Lead Free | 6 | 15 Weeks | No SVHC | 35mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 17 ns | 12ns | 42 ns | 94 ns | 6A | 12V | SILICON | SWITCHING | 20V | 1.2W Ta | 5.2A | 24A | -20V | P-Channel | 2400pF @ 10V | 35m Ω @ 4A, 4.5V | 1.5V @ 250μA | 6A Ta | 23.1nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| FDN5630 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fdn5630-datasheets-5881.pdf | 60V | 1.7A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.22mm | 1.4mm | Lead Free | 3 | 8 Weeks | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | Tin | No | 17A | e3 | 60V | DUAL | GULL WING | 1 | Single | 500mW | 1 | FET General Purpose Power | 150°C | 10 ns | 6ns | 6 ns | 15 ns | 1.7A | 20V | 60V | SILICON | SWITCHING | 1V | 500mW Ta | 60V | 60V | N-Channel | 400pF @ 15V | 2.4 V | 100m Ω @ 1.7A, 10V | 3V @ 250μA | 1.7A Ta | 10nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDN327N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdn327n-datasheets-5017.pdf | 20V | 2A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.22mm | 1.4mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 500mW | 1 | FET General Purpose Power | 150°C | 6 ns | 6.5ns | 6.5 ns | 14 ns | 2A | 8V | SILICON | SWITCHING | 700mV | 500mW Ta | 2A | 20V | N-Channel | 423pF @ 10V | 700 mV | 70m Ω @ 2A, 4.5V | 1.5V @ 250μA | 2A Ta | 6.3nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SI2318CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si2318cdst1ge3-datasheets-5701.pdf&product=vishaysiliconix-si2318cdst1ge3-6385854 | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 42mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 1.25W | 1 | 150°C | 12 ns | 8 ns | 14 ns | 4.3A | 20V | SILICON | SWITCHING | 3V | 1.25W Ta 2.1W Tc | 5.6A | 40V | N-Channel | 340pF @ 20V | 1.2 V | 42m Ω @ 4.3A, 10V | 2.5V @ 250μA | 5.6A Tc | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI1308EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1308edlt1ge3-datasheets-5716.pdf | SC-70, SOT-323 | 2.2mm | 1.1mm | 1.35mm | Lead Free | 3 | 14 Weeks | 124.596154mg | No SVHC | 132mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 400mW | 1 | FET General Purpose Power | 150°C | 2 ns | 9ns | 8 ns | 8 ns | 1.5A | 12V | SILICON | SWITCHING | 600mV | 400mW Ta 500mW Tc | 30V | N-Channel | 105pF @ 15V | 132m Ω @ 1.4A, 10V | 1.5V @ 250μA | 1.4A Tc | 4.1nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| FDN304P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdn304p-datasheets-5437.pdf | -20V | -2.4A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.22mm | 3.05mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 52MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 500mW | 1 | Other Transistors | 150°C | 15 ns | 15ns | 15 ns | 40 ns | 2.4A | 8V | -20V | SILICON | SWITCHING | 20V | -800mV | 500mW Ta | -20V | P-Channel | 1312pF @ 10V | -800 mV | 52m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2.4A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| TP0610K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-tp0610kt1e3-datasheets-5432.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 1.437803g | Unknown | 10Ohm | 3 | yes | EAR99 | ESD PROTECTION, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 20 | 350mW | 1 | Other Transistors | 150°C | 20 ns | 35 ns | -185mA | 20V | SILICON | SWITCHING | 60V | -3V | 350mW Ta | -60V | P-Channel | 23pF @ 25V | -3 V | 6 Ω @ 500mA, 10V | 3V @ 250μA | 185mA Ta | 1.7nC @ 15V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSS308PEH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bss308peh6327xtsa1-datasheets-5465.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | Halogen Free | DUAL | GULL WING | 3 | Single | 500mW | 1 | 5.6 ns | 7.7ns | 15.3 ns | 1.6A | 20V | -30V | SILICON | 30V | 500mW Ta | 2A | 0.08Ohm | P-Channel | 500pF @ 15V | 80m Ω @ 2A, 10V | 2V @ 11μA | 2A Ta | 5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMP3098L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmp3098l7-datasheets-5239.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 16 Weeks | 7.994566mg | No SVHC | 70mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | 38A | e3 | 30V | YES | DUAL | GULL WING | 3 | 1 | Single | 1.08W | 1 | 6 ns | 5ns | 5 ns | 17.6 ns | 3.8A | 20V | SILICON | SWITCHING | -1.8V | 1.08W Ta | P-Channel | 336pF @ 25V | 54.2ns | 22ns | 70m Ω @ 3.8A, 10V | 2.1V @ 250μA | 3.8A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| DMG7430LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg7430lfg7-datasheets-5456.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | Lead Free | 5 | 17 Weeks | 72.007789mg | No SVHC | 8 | no | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 1 | Single | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 5.2 ns | 21.2ns | 5.1 ns | 22.3 ns | 10.5A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 900mW Ta | N-Channel | 1281pF @ 15V | 11m Ω @ 20A, 10V | 2.5V @ 250μA | 10.5A Ta | 26.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDN338P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdn338p-datasheets-5472.pdf | -20V | -1.6A | TO-236-3, SC-59, SOT-23-3 | 1.22mm | 3.05mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 115mOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 500mW | 1 | Other Transistors | 150°C | 10 ns | 11ns | 11 ns | 16 ns | 1.6A | 8V | SILICON | SWITCHING | 20V | -800mV | 500mW Ta | -20V | P-Channel | 451pF @ 10V | -800 mV | 115m Ω @ 1.6A, 4.5V | 1.5V @ 250μA | 1.6A Ta | 6.2nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| AO3420 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | yes | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.4W | 1 | 6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.4W Ta | 6A | 0.024Ohm | N-Channel | 630pF @ 10V | 24m Ω @ 6A, 10V | 1V @ 1mA | 6A Ta | 8.8nC @ 4.5V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN2F30FHTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/diodesincorporated-zxmn2f30fhta-datasheets-5560.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 16 Weeks | 7.994566mg | No SVHC | 45mOhm | 3 | No | 1 | Single | 960mW | 1 | SOT-23-3 | 452pF | 2.9 ns | 5.6ns | 5.6 ns | 19.4 ns | 4.9A | 12V | 20V | 20V | 900mV | 960mW Ta | 45mOhm | 20V | N-Channel | 452pF @ 10V | 900 mV | 45mOhm @ 2.5A, 4.5V | 1.5V @ 250μA | 4.1A Ta | 4.8nC @ 4.5V | 45 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SI1032R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1032rt1ge3-datasheets-5605.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | Unknown | 5Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 250mW | 1 | FET General Purpose Power | 50 ns | 25ns | 25 ns | 50 ns | 200mA | 6V | SILICON | SWITCHING | 900mV | 250mW Ta | 20V | N-Channel | 5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 140mA Ta | 0.75nC @ 4.5V | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||||||||
| PMV30XPEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-pmv30xpear-datasheets-5574.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | AEC-Q101; IEC-60134 | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 490mW Ta 5.435W Tc | TO-236AB | 0.057Ohm | P-Channel | 1465pF @ 10V | 34m Ω @ 3A, 4.5V | 1.25V @ 250μA | 4.5A Ta | 17nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV20ENR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmv20enr-datasheets-5332.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 3 | Tin | e3 | DUAL | GULL WING | 260 | 3 | 30 | 1 | 9 ns | 17ns | 8 ns | 9 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 510mW Ta 6.94W Tc | 6A | 0.021Ohm | N-Channel | 435pF @ 15V | 21m Ω @ 6A, 10V | 2V @ 250μA | 6A Ta | 10.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTS4409NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nts4409nt1g-datasheets-5110.pdf | 25V | 700mA | SC-70, SOT-323 | 2.2mm | 900μm | 1.35mm | Lead Free | 3 | 11 Weeks | No SVHC | 249MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 280mW | 1 | FET General Purpose Power | 5 ns | 8.2ns | 8.2 ns | 23 ns | 750mA | 8V | SILICON | SWITCHING | 650mV | 280mW Tj | 0.7A | 25V | N-Channel | 60pF @ 10V | 350m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 700mA Ta | 1.5nC @ 4.5V | 2.7V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| DMG6968U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmg6968u7-datasheets-5215.pdf&product=diodesincorporated-dmg6968u7-6385801 | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 6 Weeks | 7.994566mg | No SVHC | 36mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 810mW | 1 | FET General Purpose Powers | 54 ns | 66ns | 205 ns | 613 ns | 6.5A | 12V | SILICON | SWITCHING | 500mV | 1.3W Ta | 20V | N-Channel | 151pF @ 10V | 500 mV | 25m Ω @ 6.5A, 4.5V | 900mV @ 250μA | 6.5A Ta | 8.5nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRLML6401TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlml6401trpbf-datasheets-5260.pdf | -12V | -4.3A | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 50mOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 150°C | 11 ns | 32ns | 210 ns | 250 ns | -4.3A | 8V | -12V | SILICON | SWITCHING | 12V | -550mV | 1.3W Ta | -12V | P-Channel | 830pF @ 10V | -550 mV | 50m Ω @ 4.3A, 4.5V | 950mV @ 250μA | 4.3A Ta | 15nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| MMBF2201NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-mmbf2201nt1g-datasheets-5158.pdf | 20V | 300mA | SC-70, SOT-323 | Lead Free | 3 | 4 Weeks | No SVHC | 1Ohm | 3 | ACTIVE, NOT REC (Last Updated: 17 hours ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 150mW | 1 | FET General Purpose Powers | 2.5 ns | 2.5ns | 2.5 ns | 15 ns | 300mA | 20V | SILICON | SWITCHING | 1.7V | 150mW Ta | 20V | N-Channel | 45pF @ 5V | 1.7 V | 1 Ω @ 300mA, 10V | 2.4V @ 250μA | 300mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI2356DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2356dst1ge3-datasheets-5405.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 960mW | 1 | 150°C | 6 ns | 52ns | 53 ns | 13 ns | 3.2A | 12V | SILICON | SWITCHING | 1.5V | 960mW Ta 1.7W Tc | 40V | N-Channel | 370pF @ 20V | 51m Ω @ 3.2A, 10V | 1.5V @ 250μA | 4.3A Tc | 13nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMG3402L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg3402l7-datasheets-4618.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 23 Weeks | 7.994566mg | 3 | EAR99 | e3 | Matte Tin (Sn) | DMG3402 | 1 | Single | 1.9 ns | 1.6ns | 2 ns | 10.3 ns | 4A | 12V | 1.4W Ta | 30V | N-Channel | 464pF @ 15V | 52m Ω @ 4A, 10V | 1.4V @ 250μA | 4A Ta | 11.7nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A09GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/diodesincorporated-zxmn6a09gta-datasheets-3673.pdf | 60V | 6.8A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 40mOhm | 4 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Powers | 4.9 ns | 5ns | 4.6 ns | 25.3 ns | 6.9A | 20V | SILICON | DRAIN | SWITCHING | 1V | 2W Ta | 5A | N-Channel | 1407pF @ 40V | 40m Ω @ 8.2A, 10V | 3V @ 250μA | 5.4A Ta | 24.2nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMN2005LP4K-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn2005lp4k7-datasheets-5177.pdf | 3-XFDFN | 1mm | 350μm | 600μm | Lead Free | 3 | 15 Weeks | No SVHC | 1.5Ohm | 3 | yes | EAR99 | HIGH RELIABILITY | Gold | No | e4 | BOTTOM | 260 | 3 | 1 | Single | 40 | 200mW | 1 | FET General Purpose Powers | 4.06 ns | 13.7 ns | 200mA | 10V | SILICON | DRAIN | SWITCHING | 400mW Ta | 0.2A | 20V | N-Channel | 41pF @ 3V | 1.5 Ω @ 10mA, 4V | 900mV @ 100μA | 200mA Ta | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLML6244TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irlml6244trpbf-datasheets-5187.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 27MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 1.3W | 1 | FET General Purpose Power | 150°C | 4.9 ns | 7.5ns | 12 ns | 19 ns | 6.3A | 12V | SILICON | SWITCHING | 900mV | 1.3W Ta | 18 ns | 20V | N-Channel | 700pF @ 16V | 12 V | 21m Ω @ 6.3A, 4.5V | 1.1V @ 10μA | 6.3A Ta | 8.9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IRLML2060TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlml2060trpbf-datasheets-5249.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 480MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 1.25W | 1 | FET General Purpose Power | 4.9 ns | 3.8ns | 2.8 ns | 3.7 ns | 1.2A | 16V | SILICON | SWITCHING | 2.5V | 1.25W Ta | 21 ns | 4.8A | 60V | N-Channel | 64pF @ 25V | 480m Ω @ 1.2A, 10V | 2.5V @ 25μA | 1.2A Ta | 0.67nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLML6302TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irlml6302trpbf-datasheets-5273.pdf | -20V | -620mA | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 600mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | Micro3 | e3 | DUAL | GULL WING | Single | 540mW | 1 | Other Transistors | 13 ns | 18ns | 22 ns | 22 ns | -780mA | 12V | -20V | SILICON | SWITCHING | -1.5V | 540mW Ta | 20V | 0.78A | -20V | P-Channel | 97pF @ 15V | -1.5 V | 600m Ω @ 610mA, 4.5V | 1.5V @ 250μA | 780mA Ta | 3.6nC @ 4.45V | 2.7V 4.5V | ±12V |
