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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NX2301P,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-nx2301p215-datasheets-3992.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 400mW Ta 2.8W Tc | TO-236AB | 0.19Ohm | P-Channel | 380pF @ 6V | 120m Ω @ 1A, 4.5V | 1.1V @ 250μA | 2A Ta | 6nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84W-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-bss84w7f-datasheets-3936.pdf | -50V | -130mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Lead Free | 3 | 16 Weeks | 6.010099mg | No SVHC | 10Ohm | 3 | yes | EAR99 | LOW CAPACITANCE | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 200mW | 1 | Other Transistors | 10 ns | 18 ns | -130mA | 20V | SILICON | SWITCHING | 50V | -1.6V | 200mW Ta | P-Channel | 45pF @ 25V | -1.6 V | 10 Ω @ 100mA, 5V | 2V @ 1mA | 130mA Ta | 5V | ±20V | ||||||||||||||||||||||||||||||||||
| FDS4465 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fds4465-datasheets-3220.pdf | -20V | -13.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 8.5MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 175°C | 20 ns | 24ns | 140 ns | 300 ns | 13.5A | 8V | -20V | SILICON | SWITCHING | 20V | -600mV | 2.5W Ta | 50A | -20V | P-Channel | 8237pF @ 10V | -600 mV | 8.5m Ω @ 13.5A, 4.5V | 1.5V @ 250μA | 13.5A Ta | 120nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||
| CSD25404Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | Tin | not_compliant | e3 | DUAL | NO LEAD | CSD25404 | Single | 1 | 13 ns | 8ns | 13 ns | 35 ns | 104A | 12V | SILICON | SOURCE | SWITCHING | 20V | 20V | 2.8W Ta 96W Tc | 240A | 0.0121Ohm | P-Channel | 2120pF @ 10V | 6.5m Ω @ 10A, 4.5V | 1.15V @ 250μA | 104A Tc | 14.1nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| AO3419 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | Lead Free | 3 | 18 Weeks | 3 | EAR99 | No | DUAL | GULL WING | 3 | 1 | 1.4W | 1 | 150°C | 11 ns | 22 ns | -3.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -500mV | 1.4W Ta | 0.075Ohm | -20V | P-Channel | 400pF @ 10V | 85m Ω @ 3.5A, 10V | 1.4V @ 250μA | 3.5A Ta | 4.4nC @ 4.5V | 1.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| RZE002P02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-rze002p02tl-datasheets-4108.pdf | SC-75, SOT-416 | Lead Free | 3 | 3 | yes | EAR99 | Copper, Silver, Tin | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | 10 | 150mW | 1 | Other Transistors | 6 ns | 4ns | 17 ns | 17 ns | 200mA | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 150mW Ta | 0.2A | -20V | P-Channel | 115pF @ 10V | 1.2 Ω @ 200mA, 4.5V | 1V @ 100μA | 200mA Ta | 1.4nC @ 4.5V | 1.2V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| BSS131H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-bss131h6327xtsa1-datasheets-4090.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 3.05mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | 240V | Halogen Free | DUAL | GULL WING | 3 | 1 | 360mW | 1 | 150°C | 3.3 ns | 3.1ns | 13.7 ns | 100mA | 20V | 240V | 240V | SILICON | SINGLE WITH BUILT-IN DIODE | 1.4V | 360mW Ta | 4.2 pF | 240V | N-Channel | 77pF @ 25V | 1.4 V | 14 Ω @ 100mA, 10V | 1.8V @ 56μA | 110mA Ta | 3.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| CSD16327Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 1.1mm | 3.3mm | Contains Lead | 5 | 12 Weeks | Unknown | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD16327 | 1 | Single | NOT SPECIFIED | 2.8W | 1 | FET General Purpose Power | 150°C | 5.3 ns | 15ns | 6.3 ns | 13 ns | 22A | 10V | SILICON | DRAIN | SWITCHING | 1.2V | 3W Ta | 60A | 0.0065Ohm | 65 pF | 25V | N-Channel | 1300pF @ 12.5V | 4m Ω @ 24A, 8V | 1.4V @ 250μA | 60A Tc | 8.4nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||
| SSM3J327R,LF | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 3.9A | 20V | 1W Ta | P-Channel | 290pF @ 10V | 93m Ω @ 1.5A, 4.5V | 1V @ 1mA | 3.9A Ta | 4.6nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3404L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn3404l7-datasheets-3929.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 15 Weeks | 7.994566mg | No SVHC | 28mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.4W | 1 | FET General Purpose Powers | Not Qualified | 150°C | 3.41 ns | 6.18ns | 6.18 ns | 13.92 ns | 4.2A | 20V | SILICON | SWITCHING | 1.5V | 720mW Ta | 5.8A | 30V | N-Channel | 386pF @ 15V | 1.5 V | 28m Ω @ 5.8A, 10V | 2V @ 250μA | 5.8A Ta | 9.2nC @ 10V | 3V 10V | ±20V | |||||||||||||||||||||||||||||||
| DN3525N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/microchiptechnology-dn3525n8g-datasheets-3524.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 7 Weeks | 52.786812mg | No SVHC | 3 | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) - annealed | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | 20 ns | 25ns | 25 ns | 25 ns | 360mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 1A | 6Ohm | 250V | N-Channel | 350pF @ 25V | 6 Ω @ 200mA, 0V | 360mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STB16NF06LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb16nf06lt4-datasheets-2814.pdf | 60V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 90MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB16N | 4 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 37ns | 12.5 ns | 20 ns | 16A | 16V | 60V | SILICON | DRAIN | SWITCHING | 1V | 45W Tc | 64A | 60V | N-Channel | 345pF @ 25V | 4 V | 90m Ω @ 8A, 10V | 1V @ 250μA (Min) | 16A Tc | 10nC @ 4.5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||
| ZXMN10A25GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn10a25gta-datasheets-3623.pdf | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 125mOhm | no | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | R-PDSO-G4 | 4.9 ns | 3.7ns | 9.4 ns | 18 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 2.9A | 100V | N-Channel | 859pF @ 50V | 125m Ω @ 2.9A, 10V | 4V @ 250μA | 2.9A Ta | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STD2N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std2n80k5-datasheets-6794.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 17 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STD2N80 | 1 | Single | 8 ns | 19 ns | 2A | 30V | 45W Tc | 800V | N-Channel | 95pF @ 100V | 4.5 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 3nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123W-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-bss123w7f-datasheets-3690.pdf | 100V | 170mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Lead Free | 3 | 13 Weeks | 6.010099mg | No SVHC | 6Ohm | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 200mW | 1 | FET General Purpose Powers | 8 ns | 8ns | 8 ns | 13 ns | 170mA | 20V | SILICON | SWITCHING | 200mW Ta | 6 pF | 100V | N-Channel | 60pF @ 25V | 6 Ω @ 170mA, 10V | 2V @ 1mA | 170mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTR4501NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntr4501nt1g-datasheets-3712.pdf | 20V | 3.2A | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 940μm | 1.3mm | Lead Free | 3 | 11 Weeks | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 1.25W | 1 | FET General Purpose Power | 6.5 ns | 12ns | 12 ns | 12 ns | 3.2A | 12V | SILICON | SWITCHING | 1.2V | 1.25W Tj | 20V | N-Channel | 200pF @ 10V | 1.2 V | 80m Ω @ 3.6A, 4.5V | 1.2V @ 250μA | 3.2A Ta | 6nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| SI7810DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7810dnt1e3-datasheets-3656.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 62mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 15ns | 15 ns | 20 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 20A | 100V | N-Channel | 4.5 V | 62m Ω @ 5.4A, 10V | 4.5V @ 250μA | 3.4A Ta | 17nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| AO3414 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | Lead Free | 3 | 16 Weeks | 3 | EAR99 | No | DUAL | GULL WING | 1 | 1.4W | 1 | 150°C | 2.5 ns | 21 ns | 3A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700mV | 1.4W Ta | 4.2A | 0.05Ohm | 20V | N-Channel | 436pF @ 10V | 50m Ω @ 4.2A, 4.5V | 1V @ 250μA | 3A Ta | 6.2nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMP21D0UFB4-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp21d0ufb47b-datasheets-3768.pdf | 3-XFDFN | 1.05mm | 350μm | 650μm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | Gold | No | e4 | BOTTOM | 260 | 3 | 1 | Single | 40 | 990mW | 1 | Other Transistors | 7.1 ns | 8ns | 18.5 ns | 31.7 ns | 1.17A | 8V | SILICON | DRAIN | SWITCHING | 20V | 430mW Ta | 0.86A | 0.4Ohm | -20V | P-Channel | 80pF @ 10V | 495m Ω @ 400mA, 4.5V | 700mV @ 250μA | 770mA Ta | 1.54nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| AO3403 | Alpha & Omega Semiconductor Inc. | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 3 | 16 Weeks | 3 | EAR99 | No | DUAL | GULL WING | 3 | 1.4W | 1 | 2.6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.4W Ta | P-Channel | 315pF @ 15V | 115m Ω @ 2.6A, 10V | 1.4V @ 250μA | 2.6A Ta | 7.2nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN0R9-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn0r925ylc115-datasheets-3663.pdf | SC-100, SOT-669 | 4 | 12 Weeks | EAR99 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 272W Tc | 100A | 1563A | 0.00125Ohm | 342 mJ | N-Channel | 6775pF @ 12V | 0.99m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTR4101PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntr4101pt1g-datasheets-3810.pdf | -20V | -3.2A | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 940μm | 1.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 3 | Single | 730mW | 1 | Other Transistors | 7.5 ns | 12.6ns | 12.6 ns | 30.2 ns | -3.2A | 8V | SILICON | SWITCHING | 20V | -720mV | 420mW Ta | -20V | P-Channel | 675pF @ 10V | -720 mV | 85m Ω @ 1.6A, 4.5V | 1.2V @ 250μA | 1.8A Ta | 8.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| DMN2400UFB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn2400ufb7-datasheets-3816.pdf | 3-XFDFN | 1.08mm | 480μm | 675μm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 3 | 1 | 40 | 1 | FET General Purpose Power | 4.11 ns | 3.82ns | 9.6 ns | 14.8 ns | 750mA | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 470mW Ta | 0.75A | 0.55Ohm | 20V | N-Channel | 36pF @ 16V | 550m Ω @ 600mA, 4.5V | 900mV @ 250μA | 750mA Ta | 0.5nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI4464DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4464dyt1e3-datasheets-3300.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 240mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 12 ns | 15 ns | 1.7A | 20V | SILICON | SWITCHING | 1.5W Ta | 200V | N-Channel | 2 V | 240m Ω @ 2.2A, 10V | 4V @ 250μA | 1.7A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STN4NF03L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stn4nf03l-datasheets-3272.pdf | 30V | 6.5A | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 12 Weeks | 4.535924g | No SVHC | 50mOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | Tin | No | SOT-223-P008 | e3 | DUAL | GULL WING | 260 | STN4N | 4 | 1 | Single | 30 | 3.3W | 1 | FET General Purpose Power | 150°C | 11 ns | 100ns | 22 ns | 35 ns | 6.5A | 16V | SILICON | DRAIN | SWITCHING | 1V | 3.3W Tc | 4A | 26A | 30V | N-Channel | 330pF @ 25V | 50m Ω @ 2A, 10V | 1V @ 250μA | 6.5A Tc | 9nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||
| FDMC8878 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc8878-datasheets-3276.pdf | 8-PowerWDFN | 3mm | 950μm | 3mm | Lead Free | 5 | 23 Weeks | 180mg | No SVHC | 14MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Gold | e4 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.1W | 1 | FET General Purpose Power | Not Qualified | S-PDSO-N5 | 8 ns | 4ns | 3 ns | 20 ns | 9.6A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.7V | 2.1W Ta 31W Tc | 60A | 30V | N-Channel | 1230pF @ 15V | 1.7 V | 14m Ω @ 9.6A, 10V | 3V @ 250μA | 9.6A Ta 16.5A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| ZVP2106GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zvp2106gta-datasheets-2629.pdf | -60V | -450mA | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 5Ohm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | R-PDSO-G4 | 7 ns | 15ns | 15 ns | 12 ns | 450mA | 20V | -60V | SILICON | DRAIN | SWITCHING | 60V | -3.5V | 2W Ta | 0.45A | 4A | -60V | P-Channel | 100pF @ 18V | -3.5 V | 5 Ω @ 500mA, 10V | 3.5V @ 1mA | 450mA Ta | 10V | ±20V | |||||||||||||||||||||||||||
| BSC123N08NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc123n08ns3gatma1-datasheets-3345.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 66W | 1 | R-PDSO-F5 | 12 ns | 18ns | 4 ns | 19 ns | 11A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 66W Tc | 55A | 220A | 70 mJ | N-Channel | 1870pF @ 40V | 12.3m Ω @ 33A, 10V | 3.5V @ 33μA | 11A Ta 55A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIR422DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir422dpt1ge3-datasheets-3469.pdf | PowerPAK® SO-8 | 5.969mm | 1.12mm | 5.0038mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 6.6mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Powers | 150°C | R-XDSO-C5 | 19 ns | 84ns | 11 ns | 28 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 5W Ta 34.7W Tc | 20.5A | 70A | 45 mJ | 40V | N-Channel | 1785pF @ 20V | 1.2 V | 6.6m Ω @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| SIR466DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir466dpt1ge3-datasheets-3474.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3.5mOhm | 8 | yes | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 30 ns | 9ns | 9 ns | 35 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 2.4V | 5W Ta 54W Tc | 70A | 45 mJ | 30V | N-Channel | 2730pF @ 15V | 3.5m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 65nC @ 10V | 4.5V 10V | ±20V |
