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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD18537NQ5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Copper, Tin | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD18537 | 1 | Single | 3.2W | 1 | FET General Purpose Power | 150°C | 5.8 ns | 4ns | 3.2 ns | 14.4 ns | 11A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta 75W Tc | 50A | 5.2 pF | 55 mJ | 60V | N-Channel | 1480pF @ 30V | 3 V | 13m Ω @ 12A, 10V | 3.5V @ 250μA | 11A Ta 50A Tc | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDS4685 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fds4685-datasheets-1693.pdf | -40V | -8.2A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 27MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 14 ns | 11ns | 18 ns | 50 ns | 8.2mA | 20V | SILICON | SWITCHING | 40V | -1.6V | 2.5W Ta | -40V | P-Channel | 1872pF @ 20V | -1.6 V | 27m Ω @ 8.2A, 10V | 3V @ 250μA | 8.2A Ta | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSC030N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc030n03lsgatma1-datasheets-1746.pdf | 8-PowerTDFN | Contains Lead | 8 | 26 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 69W | 1 | 7.3 ns | 5.2ns | 4.8 ns | 29 ns | 23A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 400A | 0.0047Ohm | 75 mJ | N-Channel | 4300pF @ 15V | 3m Ω @ 30A, 10V | 2.2V @ 250μA | 23A Ta 100A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSZ110N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz110n08ns5atma1-datasheets-1032.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | EAR99 | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N3 | 9 ns | 3ns | 3 ns | 15 ns | 40A | 20V | 80V | SILICON | DRAIN | SWITCHING | 50W Tc | 40 mJ | 80V | N-Channel | 1300pF @ 40V | 11m Ω @ 20A, 10V | 3.8V @ 22μA | 40A Tc | 18.5nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4410DYTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-si4410dytrpbf-datasheets-1763.pdf | 30V | 10A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 14 Weeks | No SVHC | 13.5mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 2.5W | 1 | 11 ns | 7.7ns | 44 ns | 38 ns | 10A | 20V | 30V | SILICON | SWITCHING | 1V | 2.5W Ta | 50A | 400 mJ | 30V | N-Channel | 1585pF @ 15V | 1 V | 13.5m Ω @ 10A, 10V | 1V @ 250μA | 10A Ta | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTF6P02T3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntf6p02t3g-datasheets-1045.pdf | -20V | -6A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 14 Weeks | No SVHC | 44MOhm | 4 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | Single | 40 | 8.3W | 1 | Other Transistors | 7 ns | 25ns | 50 ns | 75 ns | 10A | 8V | -20V | SILICON | DRAIN | SWITCHING | 20V | -700mV | 8.3W Ta | 35A | -20V | P-Channel | 1200pF @ 16V | 50m Ω @ 6A, 4.5V | 1V @ 250μA | 10A Ta | 20nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SIR424DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir424dpt1ge3-datasheets-1847.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 4.8W | 1 | FET General Purpose Powers | R-PDSO-C5 | 18 ns | 12ns | 10 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 4.8W Ta 41.7W Tc | 23.4A | 70A | 20V | N-Channel | 1250pF @ 10V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIA456DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sia456djt1ge3-datasheets-1859.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 1.38Ohm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 6 | 1 | 40 | 3.5W | 1 | FET General Purpose Powers | 150°C | S-XDSO-C3 | 5 ns | 20ns | 12 ns | 16 ns | 2.6A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.4V | 3.5W Ta 19W Tc | 2A | 200V | N-Channel | 350pF @ 100V | 1.4 V | 1.38 Ω @ 750mA, 4.5V | 1.4V @ 250μA | 2.6A Tc | 14.5nC @ 10V | 1.8V 4.5V | ±16V | ||||||||||||||||||||||||||||||||||||
| SI7617DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7617dnt1ge3-datasheets-1347.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 11 ns | 43ns | 11 ns | 32 ns | -35A | 25V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.7W Ta 52W Tc | 60A | 42 mJ | -30V | P-Channel | 1800pF @ 15V | 12.3m Ω @ 13.9A, 10V | 2.5V @ 250μA | 35A Tc | 59nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| STN1HNK60 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1hnk60rap-datasheets-7505.pdf | 600V | 400mA | TO-261-4, TO-261AA | 6.5mm | 1.82mm | 3.5mm | Lead Free | 4 | 8 Weeks | No SVHC | 8.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | STN1H | 4 | 1 | Single | 30 | 3.3W | 1 | FET General Purpose Power | 150°C | R-PDSO-G4 | 6.5 ns | 5ns | 25 ns | 19 ns | 500mA | 30V | SILICON | DRAIN | SWITCHING | 3V | 3.3W Tc | 0.4A | 25 mJ | 600V | N-Channel | 156pF @ 25V | 3 V | 8.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 400mA Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STD1NK60T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1hnk60rap-datasheets-7505.pdf | 600V | 1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.63mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 8.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | TO-252-P032P | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD1NK | 3 | 1 | Single | 30W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 6.5 ns | 5ns | 25 ns | 19 ns | 1A | 30V | SILICON | SWITCHING | 3V | 30W Tc | TO-252AA | 1A | 4A | 25 mJ | 600V | N-Channel | 156pF @ 25V | 8.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 1A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDD8447L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdd8447l-datasheets-1628.pdf | 40V | 54A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 8.5MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 12ns | 9 ns | 38 ns | 15.2A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 3.1W Ta 44W Tc | 40V | N-Channel | 1970pF @ 20V | 1.9 V | 8.5m Ω @ 14A, 10V | 3V @ 250μA | 15.2A Ta 50A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLL2705TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irll2705trpbf-datasheets-1660.pdf | 55V | 3.8A | TO-261-4, TO-261AA | 6.6802mm | 1.8mm | 6.7mm | Lead Free | 4 | 12 Weeks | No SVHC | 40mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.1W | 1 | 150°C | R-PDSO-G4 | 6.2 ns | 12ns | 22 ns | 35 ns | 3.8A | 16V | 55V | SILICON | DRAIN | 2V | 1W Ta | 88 ns | 5.2A | 55V | N-Channel | 870pF @ 25V | 2 V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 3.8A Ta | 48nC @ 10V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| NDT452AP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-ndt452ap-datasheets-1685.pdf | -30V | -5A | TO-261-4, TO-261AA | 1.8mm | 6.7mm | Lead Free | 4 | 18 Weeks | No SVHC | 65mOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | 5A | e3 | DUAL | GULL WING | 1 | 3W | 1 | Other Transistors | 150°C | 9 ns | 20ns | 19 ns | 40 ns | 5A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | -1.6V | 3W Ta | -30V | P-Channel | 690pF @ 15V | 1.6 V | 65m Ω @ 5A, 10V | 2.8V @ 250μA | 5A Ta | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMP3010LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3010lk3q13-datasheets-1690.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 15 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | 11.4 ns | 9.4ns | 99.3 ns | 260.7 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 1.7W Ta | -30V | P-Channel | 6234pF @ 15V | 8m Ω @ 10A, 10V | 2.1V @ 250μA | 17A Ta | 59.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R5-60YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn8r560ys115-datasheets-1431.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 4.535924g | 4 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 106W | 1 | 18.4 ns | 13.7ns | 9.2 ns | 32.4 ns | 76A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | 303A | 0.008Ohm | 97 mJ | 60V | N-Channel | 2370pF @ 30V | 8m Ω @ 15A, 10V | 4V @ 1mA | 76A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLR2703TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr2703trpbf-datasheets-1386.pdf | 30V | 23A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 45mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 38W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.5 ns | 140ns | 20 ns | 12 ns | 23A | 16V | SILICON | DRAIN | SWITCHING | 45W Tc | TO-252AA | 96A | 77 mJ | 30V | N-Channel | 450pF @ 25V | 1 V | 45m Ω @ 14A, 10V | 1V @ 250μA | 23A Tc | 15nC @ 4.5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRLR120NTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr120ntrpbf-datasheets-1519.pdf | 100V | 11A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 185mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 48W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 4 ns | 35ns | 22 ns | 23 ns | 10A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 48W Tc | TO-252AA | 160 ns | 85 mJ | 100V | N-Channel | 440pF @ 25V | 2 V | 185m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
| CSD18543Q3A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 900μm | 3.3mm | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 800μm | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | CSD18543 | 1 | Single | 66W | 1 | 150°C | 9 ns | 8 ns | 35A | 20V | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 8.1mOhm | 6.2 pF | 55 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD16N05SM9A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-rfd16n05sm9a-datasheets-1495.pdf | 50V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 47mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 72W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 30ns | 30 ns | 55 ns | 16mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 72W Tc | TO-252AA | 50V | N-Channel | 900pF @ 25V | 4 V | 47m Ω @ 16A, 10V | 4V @ 250μA | 16A Tc | 80nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AON7423 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerWDFN | Lead Free | 16 Weeks | 8 | 83W | 1 | 50A | 8V | 20V | 6.2W Ta 83W Tc | P-Channel | 5626pF @ 10V | 5m Ω @ 20A, 4.5V | 900mV @ 250μA | 28A Ta 50A Tc | 100nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16411Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16411 | 8 | Single | 2.7W | 1 | FET General Purpose Power | 5.3 ns | 7.8ns | 3.1 ns | 6 ns | 56A | 16V | 25V | SILICON | DRAIN | SWITCHING | 2V | 2.7W Ta | 43 pF | 25V | N-Channel | 570pF @ 12.5V | 2 V | 10m Ω @ 10A, 10V | 2.3V @ 250μA | 14A Ta 56A Tc | 3.8nC @ 4.5V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||
| BSC100N06LS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc100n06ls3gatma1-datasheets-1244.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 8 ns | 58ns | 19 ns | 12A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 50W Tc | 200A | 22 mJ | N-Channel | 3500pF @ 30V | 10m Ω @ 50A, 10V | 2.2V @ 23μA | 12A Ta 50A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y19-55B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk9y1955b115-datasheets-1265.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 260 | 4 | 30 | 85W | 1 | 18 ns | 180ns | 134 ns | 44 ns | 46A | 15V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85W Tc | 80 mJ | 55V | N-Channel | 1992pF @ 25V | 17.3m Ω @ 20A, 10V | 2V @ 1mA | 46A Tc | 18nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DY | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-si4435dy-datasheets-0992.pdf | -30V | -8.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.57mm | 3.9mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 20MOhm | 8 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 16 ns | 13.5ns | 25 ns | 42 ns | -8.8A | 20V | -30V | SILICON | SWITCHING | 30V | -1.7V | 2.5W Ta | -30V | P-Channel | 1604pF @ 15V | -1.7 V | 20m Ω @ 8.8A, 10V | 3V @ 250μA | 8.8A Ta | 24nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2N7000 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/onsemiconductor-2n7002-datasheets-6168.pdf&product=onsemiconductor-2n7000-6385186 | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | 4.8mm | 5.2mm | 4.19mm | Lead Free | 11 Weeks | 201mg | No SVHC | 5Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | Copper, Silver, Tin | No | 2N7000 | 1 | Single | 400mW | 1 | TO-92-3 | 40pF | 10 ns | 200mA | 20V | 60V | 2.1V | 400mW Ta | 1.2Ohm | 60V | N-Channel | 50pF @ 25V | 2.1 V | 5Ohm @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 5 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSZ440N10NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz440n10ns3gatma1-datasheets-0701.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 29W | 1 | Not Qualified | S-PDSO-N5 | 4.3 ns | 1.8ns | 2 ns | 9.1 ns | 5.3A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 29W Tc | 72A | 0.044Ohm | N-Channel | 640pF @ 50V | 44m Ω @ 12A, 10V | 2.7V @ 12μA | 5.3A Ta 18A Tc | 9.1nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD25402Q3A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 900μm | 3.3mm | Lead Free | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 800μm | EAR99 | Tin | e3 | DUAL | FLAT | 260 | CSD25402 | 1 | Single | NOT SPECIFIED | 2.8W | 1 | Other Transistors | 150°C | 10 ns | 7ns | 12 ns | 25 ns | -76A | 12V | SILICON | SOURCE | SWITCHING | 20V | -900mV | 2.8W Ta 69W Tc | 35A | -20V | P-Channel | 1790pF @ 10V | 8.9m Ω @ 10A, 4.5V | 1.15V @ 250μA | 76A Tc | 9.7nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| BSP295H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bsp295h6327xtsa1-datasheets-1176.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 3 | yes | EAR99 | Tin | e3 | Halogen Free | DUAL | GULL WING | 260 | 4 | Single | 40 | 1.5W | 1 | R-PDSO-G4 | 5.4 ns | 9.9ns | 19 ns | 27 ns | 1.8A | 20V | 60V | 60V | SILICON | DRAIN | 1.1V | 1.8W Ta | 7.2A | 0.5Ohm | 60V | N-Channel | 368pF @ 25V | 1.1 V | 300m Ω @ 1.8A, 10V | 1.8V @ 400μA | 1.8A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMC6679AZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc6679az-datasheets-1355.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 23 Weeks | 165.33333mg | No SVHC | 10MOhm | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Gold | No | e4 | DUAL | Single | 41W | 1 | Other Transistors | S-PDSO-N5 | 12 ns | 14ns | 46 ns | 63 ns | 11.5A | 25V | SILICON | DRAIN | SWITCHING | 30V | -1.8V | 2.3W Ta 41W Tc | 32A | -30V | P-Channel | 3970pF @ 15V | 10m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta 20A Tc | 91nC @ 10V | 4.5V 10V | ±25V |
