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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6648TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6648trpbf-datasheets-9229.pdf | 60V | 86A | DirectFET™ Isometric MN | 5.45mm | 508μm | 5.05mm | Lead Free | 3 | 12 Weeks | No SVHC | 5 | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 16 ns | 29ns | 13 ns | 28 ns | 86mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 2.8W Ta 89W Tc | 260A | 0.007Ohm | 47 mJ | 60V | N-Channel | 2120pF @ 25V | 7m Ω @ 17A, 10V | 4.9V @ 150μA | 86A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PHB45NQ15T,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/nexperiausainc-phb45nq15t118-datasheets-9695.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | Tin | not_compliant | e3 | YES | GULL WING | 245 | 3 | Single | 30 | 230W | 1 | R-PSSO-G2 | 11.5 ns | 22ns | 31 ns | 42 ns | 45.1A | 20V | 150V | SILICON | DRAIN | SWITCHING | 230W Tc | 90.2A | 0.042Ohm | 180 mJ | 150V | N-Channel | 1770pF @ 25V | 42m Ω @ 20A, 10V | 4V @ 1mA | 45.1A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFH7084TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfh7084trpbf-datasheets-9834.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | No SVHC | 8 | EAR99 | No | 1 | Single | FET General Purpose Power | 16 ns | 31ns | 34 ns | 64 ns | 100A | 20V | 40V | 3.9V | 156W Tc | N-Channel | 6560pF @ 25V | 1.25m Ω @ 100A, 10V | 3.9V @ 150μA | 100A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90P04P4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipd90p04p4l04atma1-datasheets-9720.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.35mm | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 125W | 1 | 175°C | R-PSSO-G2 | 20 ns | 60 ns | 140 ns | -90A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | -1.7V | 125W Tc | 60 mJ | -40V | P-Channel | 11570pF @ 25V | 4.3m Ω @ 90A, 10V | 2.2V @ 250μA | 90A Tc | 176nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRFH5006TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfh5006trpbf-datasheets-9786.pdf | 8-PowerTDFN | 6.1468mm | 990.6μm | 5.15mm | Lead Free | 5 | 12 Weeks | No SVHC | 4.1MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | 156W | 1 | FET General Purpose Power | R-PDSO-N5 | 9.6 ns | 13ns | 12 ns | 30 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 3.6W Ta 156W Tc | 400A | 60V | N-Channel | 4175pF @ 30V | 2 V | 4.1m Ω @ 50A, 10V | 4V @ 150μA | 21A Ta 100A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PSMN1R0-40YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn1r040yldx-datasheets-9595.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | HIGH RELIABILITY | YES | GULL WING | 4 | 1 | Single | 1 | 52 ns | 62ns | 38 ns | 65 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 198W Tc | 578 mJ | N-Channel | 8845pF @ 20V | 1.1m Ω @ 25A, 10V | 2.2V @ 1mA | 100A Tc | 127nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP10A18GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp10a18gta-datasheets-9078.pdf | -100V | -3.7A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 150mOhm | 4 | no | EAR99 | HIGH RELIABILITY | Tin | No | 37A | e3 | 100V | DUAL | GULL WING | 4 | 1 | Single | 3.9W | 1 | 4.6 ns | 6.8ns | 17.9 ns | 33.9 ns | 3.7A | 20V | SILICON | DRAIN | SWITCHING | -2V | 2W Ta | P-Channel | 1055pF @ 50V | 150m Ω @ 2.8A, 10V | 4V @ 250μA | 2.6A Ta | 26.9nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STD17NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std17nf25-datasheets-9649.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 165mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | STD17 | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.8 ns | 17.2ns | 8.8 ns | 21 ns | 8.5A | 20V | 250V | SILICON | SWITCHING | 3V | 90W Tc | 68A | 250V | N-Channel | 1000pF @ 25V | 3 V | 165m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 29.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| CSD16325Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd16325q5-datasheets-7690.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD16325 | 8 | Single | 3.1W | 1 | FET General Purpose Power | 10.5 ns | 16ns | 12 ns | 32 ns | 100A | 10V | 25V | SILICON | DRAIN | SWITCHING | 1.1V | 3.1W Ta | 33A | 0.0027Ohm | 500 mJ | N-Channel | 4000pF @ 12.5V | 1.1 V | 2m Ω @ 30A, 8V | 1.4V @ 250μA | 33A Ta 100A Tc | 25nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||
| BSC031N06NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc031n06ns3gatma1-datasheets-9711.pdf | 8-PowerTDFN | Contains Lead | 8 | 26 Weeks | No SVHC | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | 38 ns | 161ns | 16 ns | 63 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 139W Tc | 22A | 400A | N-Channel | 11000pF @ 30V | 3.1m Ω @ 50A, 10V | 4V @ 93μA | 100A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STD140N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std140n6f7-datasheets-8922.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STD14 | NOT SPECIFIED | 60V | 134W Tc | N-Channel | 3100pF @ 30V | 3.8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90P03P4L04ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd90p03p4l04atma1-datasheets-9733.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 137W Tc | 90A | 360A | 0.0068Ohm | 370 mJ | P-Channel | 11300pF @ 25V | 4.1m Ω @ 90A, 10V | 2V @ 253μA | 90A Tc | 160nC @ 10V | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90P04P405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd90p04p405atma1-datasheets-9798.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 3 ns | 8ns | 14 ns | 7 ns | 90A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 125W Tc | 0.0047Ohm | 60 mJ | P-Channel | 10300pF @ 25V | 4.7m Ω @ 90A, 10V | 4V @ 250μA | 90A Tc | 154nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMC610P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc610p-datasheets-9482.pdf | 8-PowerTDFN | 3.4mm | 1mm | 3.4mm | 5 | 10 Weeks | 32.13mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | S-PDSO-N5 | 24 ns | 37ns | 87 ns | 193 ns | 80A | 8V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 48W Tc | MO-240BA | 22A | 200A | 0.0039Ohm | -12V | P-Channel | 1250pF @ 6V | 3.9m Ω @ 22A, 4.5V | 1V @ 250μA | 80A Tc | 99nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| IRF7480MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf7480mtrpbf-datasheets-9497.pdf | DirectFET™ Isometric ME | Lead Free | 6 | 10 Weeks | 10 | EAR99 | BOTTOM | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-XBCC-N6 | 21 ns | 70ns | 58 ns | 68 ns | 217A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 96W Tc | 868A | 206 mJ | N-Channel | 6680pF @ 25V | 1.2m Ω @ 132A, 10V | 3.9V @ 150μA | 217A Tc | 185nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS86141 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fds86141-datasheets-9475.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 5W | 1 | FET General Purpose Power | 8.3 ns | 3.2ns | 3.2 ns | 14.3 ns | 7A | 20V | SILICON | SWITCHING | 3.1V | 2.5W Ta | 7A | 0.023Ohm | 100V | N-Channel | 934pF @ 50V | 3.1 V | 23m Ω @ 7A, 10V | 4V @ 250μA | 7A Ta | 16.5nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSC057N08NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc057n08ns3gatma1-datasheets-9511.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 14ns | 16A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 114W Tc | 400A | 0.0057Ohm | N-Channel | 3900pF @ 40V | 5.7m Ω @ 50A, 10V | 3.5V @ 73μA | 16A Ta 100A Tc | 56nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDMS6681Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms6681z-datasheets-9522.pdf | 8-PowerTDFN | 5mm | 1.1mm | 6mm | Lead Free | 5 | 10 Weeks | 68.1mg | No SVHC | 3.2MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | R-PDSO-N5 | 15 ns | 38ns | 197 ns | 260 ns | -21.1A | 25V | SILICON | DRAIN | SWITCHING | 30V | -1.7V | 2.5W Ta 73W Tc | 2020 pF | -30V | P-Channel | 10380pF @ 15V | 3.2m Ω @ 22.1A, 10V | 3V @ 250μA | 21.1A Ta 49A Tc | 241nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||
| IRFR3710ZTRPBF | Infineon Technologies | $3.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3710ztrlpbf-datasheets-9532.pdf | 100V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.1976mm | 2.52mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 18MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 140W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 14 ns | 43ns | 42 ns | 53 ns | 42A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-252AA | 53 ns | 220A | 100V | N-Channel | 2930pF @ 25V | 2 V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| STD2N105K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std2n105k5-datasheets-9591.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 17 Weeks | EAR99 | NOT SPECIFIED | STD2N105 | NOT SPECIFIED | FET General Purpose Power | 1.5A | Single | 1050V | 60W Tc | N-Channel | 115pF @ 100V | 8 Ω @ 750mA, 10V | 5V @ 100μA | 1.5A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP302-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-atp302tlh-datasheets-9616.pdf | ATPAK (2 leads+tab) | 6.5mm | 1.5mm | 7.3mm | Lead Free | 2 | 14 Weeks | 13mOhm | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | GULL WING | 3 | Single | 70W | 1 | Other Transistors | R-PSSO-G2 | 35 ns | 430ns | 500 ns | 420 ns | 70A | 20V | SILICON | DRAIN | 70W Tc | 280A | 60V | P-Channel | 5400pF @ 20V | 13m Ω @ 35A, 10V | 70A Ta | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STD4NK100Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk100z-datasheets-9439.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.63mm | 2 | 12 Weeks | 3 | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STD4N | 1 | NOT SPECIFIED | 90W | 1 | FET General Purpose Powers | 150°C | R-PSSO-G2 | 15 ns | 32 ns | 2.2A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 90W Tc | 8.8A | 1kV | N-Channel | 601pF @ 25V | 6.8 Ω @ 1.1A, 10V | 4.5V @ 50μA | 2.2A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STB55NF06LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb55nf06lt4-datasheets-9434.pdf | 60V | 55A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 18MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB55N | 3 | Single | 30 | 95W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 100ns | 20 ns | 40 ns | 55A | 16V | SILICON | DRAIN | SWITCHING | 1.7V | 95W Tc | 220A | 60V | N-Channel | 1700pF @ 25V | 18m Ω @ 27.5A, 10V | 4.7V @ 250μA | 55A Tc | 37nC @ 4.5V | 10V 5V | ±16V | |||||||||||||||||||||||||||||||||
| SQJ431EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj431ept1ge3-datasheets-9445.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 200V | 83W Tc | 178mOhm | P-Channel | 4355pF @ 25V | 213mOhm @ 1A, 4V | 3.5V @ 250μA | 12A Tc | 160nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7884BDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7884bdpt1ge3-datasheets-8917.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 7.5mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.6W | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 14ns | 11 ns | 38 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 3V | 4.6W Ta 46W Tc | 50A | 54 mJ | 40V | N-Channel | 3540pF @ 20V | 7.5m Ω @ 16A, 10V | 3V @ 250μA | 58A Tc | 77nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7898DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7898dpt1e3-datasheets-9418.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 85mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 9 ns | 10ns | 10 ns | 24 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 150V | 2V | 1.9W Ta | 3A | 25A | N-Channel | 4 V | 85m Ω @ 3.5A, 10V | 4V @ 250μA | 3A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF640NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf640nstrlpbf-datasheets-9047.pdf | 200V | 18A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 150mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 150W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 10 ns | 19ns | 5.5 ns | 23 ns | 18A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | 251 ns | 72A | 247 mJ | 200V | N-Channel | 1160pF @ 25V | 4 V | 150m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| CSD18501Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18501q5a-datasheets-7572.pdf | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 hours ago) | yes | 1mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | 260 | CSD18501 | Single | 3.1W | 1 | FET General Purpose Power | 4.7 ns | 10ns | 3.4 ns | 20 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 3.1W Ta 150W Tc | 22A | 0.0043Ohm | 23 pF | 40V | N-Channel | 3840pF @ 20V | 3.2m Ω @ 25A, 10V | 2.3V @ 250μA | 22A Ta 100A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| CSD17303Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/texasinstruments-csd17303q5-datasheets-7576.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17303 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 11.4 ns | 16ns | 10.4 ns | 27 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 1.1V | 3.2W Ta | 200A | 0.0037Ohm | 530 mJ | 30V | N-Channel | 3420pF @ 15V | 1.1 V | 2.4m Ω @ 25A, 8V | 1.6V @ 250μA | 32A Ta 100A Tc | 23nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||
| IPD60R380C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r380c6atma1-datasheets-9304.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 83W | 1 | R-PSSO-G2 | 15 ns | 10ns | 9 ns | 110 ns | 10.6A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 600V | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V |
