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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TP5335K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp5335k1g-datasheets-8147.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 20 Weeks | 1.437803g | 3 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | Other Transistors | Not Qualified | 150°C | 20 ns | 15ns | 15 ns | 25 ns | -85mA | 20V | SILICON | SWITCHING | 350V | 360mW Ta | 0.085A | 22 pF | -350V | P-Channel | 110pF @ 25V | 30 Ω @ 200mA, 10V | 2.4V @ 1mA | 85mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMC86102L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc86102l-datasheets-8179.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 13 Weeks | 165.33333mg | No SVHC | 24MOhm | 8 | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 41W | 1 | FET General Purpose Power | S-PDSO-N5 | 7.7 ns | 2.2ns | 2.4 ns | 19 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.3W Ta 41W Tc | 7A | 30A | 63 mJ | 100V | N-Channel | 1330pF @ 50V | 23m Ω @ 7A, 10V | 3V @ 250μA | 7A Ta 18A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRL530NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl530nstrlpbf-datasheets-7930.pdf | 100V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 120mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 79W Tc | 210 ns | 60A | 100V | N-Channel | 800pF @ 25V | 2 V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||
| SQJ402EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj402ept1ge3-datasheets-7757.pdf | 8-PowerTDFN | 4.9mm | 1.07mm | 4.37mm | Lead Free | 4 | 12 Weeks | Unknown | 8 | EAR99 | No | GULL WING | 1 | Single | 1 | R-PSSO-G4 | 10 ns | 10ns | 7 ns | 27 ns | 32A | 20V | SILICON | DRAIN | 100V | 2V | 83W Tc | 75A | N-Channel | 2289pF @ 40V | 11m Ω @ 10A, 10V | 2.5V @ 250μA | 32A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SPD30P06PGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-spd30p06pgbtma1-datasheets-7868.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PSSO-G2 | 13 ns | 11ns | 20 ns | 30 ns | 30A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 125W Tc | 0.075Ohm | 250 mJ | P-Channel | 1535pF @ 25V | 75m Ω @ 21.5A, 10V | 4V @ 1.7mA | 30A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STD15NF10T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std15nf10t4-datasheets-7875.pdf | 100V | 23A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 4.535924g | No SVHC | 65mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | DPAK_0068772 | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD15 | 3 | 1 | Single | 30 | 70W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 60 ns | 45ns | 17 ns | 49 ns | 23A | 20V | SILICON | DRAIN | SWITCHING | 3V | 70W Tc | 60A | 75 mJ | 100V | N-Channel | 870pF @ 25V | 65m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| FDMS7660 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdms7660-datasheets-7821.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 2.8MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-N5 | 17 ns | 9ns | 7 ns | 37 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 2.5W Ta 78W Tc | MO-240AA | 30V | N-Channel | 5565pF @ 15V | 1.9 V | 2.8m Ω @ 25A, 10V | 3V @ 250μA | 25A Ta 42A Tc | 84nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI7139DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7139dpt1ge3-datasheets-7945.pdf | PowerPAK® SO-8 | 1.17mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 5.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 17 ns | 56 ns | -22.4A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.2V | 5W Ta 48W Tc | 40A | 70A | 45 mJ | -30V | P-Channel | 4230pF @ 15V | 5.5m Ω @ 15A, 10V | 2.5V @ 250μA | 40A Tc | 146nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| FDMC86102LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc86102lz-datasheets-7965.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 6 Weeks | 165.33333mg | No SVHC | 24MOhm | 8 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Gold, Silver | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | 260 | Single | 30 | 41W | 1 | FET General Purpose Power | S-PDSO-N5 | 7.1 ns | 2.3ns | 2.5 ns | 19 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 41W Tc | 7A | 30A | 100V | N-Channel | 1290pF @ 50V | 1.6 V | 24m Ω @ 6.5A, 10V | 2.2V @ 250μA | 7A Ta 18A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| DMT10H010LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt10h010lps13-datasheets-7980.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 98A | 100V | 1.2W Ta 139W Tc | N-Channel | 3000pF @ 50V | 9.5m Ω @ 13A, 10V | 3.5V @ 250μA | 9.4A Ta 98A Tc | 71nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y4R8-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y4r860e115-datasheets-7919.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 238W | 1 | 28 ns | 53ns | 47 ns | 80 ns | 100A | 10V | 60V | SILICON | DRAIN | SWITCHING | 238W Tc | MO-235 | 593A | N-Channel | 7853pF @ 25V | 4.1m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 50nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-08-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0408ge3-datasheets-7864.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 8.1mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 73.5W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 15 ns | 12ns | 18 ns | 70 ns | -50A | 20V | SILICON | DRAIN | SWITCHING | 40V | -1V | 2.5W Ta 73.5W Tc | -40V | P-Channel | 5380pF @ 20V | 8.1m Ω @ 22A, 10V | 2.5V @ 250μA | 50A Tc | 159nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFR1018ETRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr1018etrpbf-datasheets-8025.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 35ns | 46 ns | 55 ns | 79mA | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-252AA | 56A | 0.0084Ohm | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 56A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BUK9612-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk961255b118-datasheets-7898.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 157W | 1 | R-PSSO-G2 | 19 ns | 101ns | 75 ns | 96 ns | 79A | 15V | 55V | SILICON | DRAIN | SWITCHING | 157W Tc | 75A | 172 mJ | 55V | N-Channel | 3693pF @ 25V | 10m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 31nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| FDMS8670S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms8670s-datasheets-8128.pdf | 30V | 42A | 8-PowerTDFN | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 3.5MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 14 ns | 19ns | 10 ns | 37 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 2.5W Ta 78W Tc | 20A | 200A | 30V | N-Channel | 4000pF @ 15V | 3.5m Ω @ 20A, 10V | 3V @ 1mA | 20A Ta 42A Tc | 73nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQJ422EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj422ept1ge3-datasheets-8138.pdf | PowerPAK® SO-8 | Lead Free | 12 Weeks | Unknown | 6 | EAR99 | No | 1 | Single | 83W | 13 ns | 10ns | 8 ns | 29 ns | 75A | 20V | 40V | 2V | 83W Tc | N-Channel | 4660pF @ 20V | 3.4m Ω @ 18A, 10V | 2.5V @ 250μA | 74A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7820DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7820dnt1ge3-datasheets-7585.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 11 ns | 12ns | 12 ns | 30 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.5W Ta | 0.24Ohm | 0.6 mJ | 200V | N-Channel | 240m Ω @ 2.6A, 10V | 4V @ 250μA | 1.7A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7415DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7415dnt1e3-datasheets-7720.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | Unknown | 65mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 12 ns | 12ns | 12 ns | 22 ns | -3.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 1.5W Ta | 30A | -60V | P-Channel | 65m Ω @ 5.7A, 10V | 3V @ 250μA | 3.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7414DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7414dnt1e3-datasheets-7511.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 15 ns | 12ns | 12 ns | 30 ns | 8.7A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3V | 1.5W Ta | 5.6A | 30A | 60V | N-Channel | 3 V | 25m Ω @ 8.7A, 10V | 3V @ 250μA | 5.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| FDD18N20LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdd18n20lz-datasheets-6935.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | 125MOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 89W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 20ns | 50 ns | 135 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-252AA | 64A | 200V | N-Channel | 1575pF @ 25V | 125m Ω @ 8A, 10V | 2.5V @ 250μA | 16A Tc | 40nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STD3NK80ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf3nk80z-datasheets-2747.pdf | 800V | 2.5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.52mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 4.5Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD3N | 3 | 1 | Single | 70W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 17 ns | 27ns | 40 ns | 36 ns | 1.25A | 30V | SILICON | SWITCHING | 3.75V | 70W Tc | 800V | N-Channel | 485pF @ 25V | 4.5 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| SI4459ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4459adyt1ge3-datasheets-7767.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 5MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | 16 ns | 16ns | 20 ns | 80 ns | -29A | 20V | SILICON | SWITCHING | 30V | -2.5V | 3.5W Ta 7.8W Tc | -30V | P-Channel | 6000pF @ 15V | -2.5 V | 5m Ω @ 15A, 10V | 2.5V @ 250μA | 29A Tc | 195nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFR13N20DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr13n20dtrpbf-datasheets-7573.pdf | 200V | 13A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 14 Weeks | No SVHC | 235mOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 27ns | 10 ns | 17 ns | 13A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 110W Tc | TO-252AA | 210 ns | 52A | 200V | N-Channel | 830pF @ 25V | 5.5 V | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 13A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| SI4463BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4463bdyt1e3-datasheets-7759.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 11mOhm | 8 | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 1.5W | 1 | Not Qualified | 35 ns | 60ns | 60 ns | 115 ns | 9.8A | 12V | SILICON | 20V | 20V | -1.4V | 1.5W Ta | P-Channel | 11m Ω @ 13.7A, 10V | 1.4V @ 250μA | 9.8A Ta | 56nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| IRF9Z34NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf9z34nstrlpbf-datasheets-7808.pdf | -55V | -19A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.83mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 100mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 68W | 1 | 175°C | R-PSSO-G2 | 13 ns | 55ns | 41 ns | 30 ns | -19A | 20V | 55V | SILICON | DRAIN | SWITCHING | -2V | 3.8W Ta 68W Tc | 82 ns | 68A | -55V | P-Channel | 620pF @ 25V | -4 V | 100m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| SI7415DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7415dnt1e3-datasheets-7720.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | No SVHC | 65mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | SI7415DN-T1-GE3 | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 12 ns | 12ns | 12 ns | 22 ns | -5.7A | 20V | -60V | SILICON | DRAIN | SWITCHING | 60V | 1V | 1.5W Ta | 3.6A | 30A | -60V | P-Channel | -3 V | 65m Ω @ 5.7A, 10V | 3V @ 250μA | 3.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| SI7322DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7322dnt1ge3-datasheets-7835.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 58mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 52W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 10ns | 10 ns | 12 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 4.4V | 3.8W Ta 52W Tc | 20A | 100V | N-Channel | 750pF @ 50V | 58m Ω @ 5.5A, 10V | 4.4V @ 250μA | 18A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SI4848DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4848dyt1e3-datasheets-7754.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 85mOhm | 8 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | Not Qualified | 150°C | 9 ns | 10ns | 10 ns | 24 ns | 3.7A | 20V | SILICON | 2V | 1.5W Ta | 2.7A | 150V | N-Channel | 2 V | 85m Ω @ 3.5A, 10V | 2V @ 250μA (Min) | 2.7A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
| BSZ520N15NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz520n15ns3gatma1-datasheets-6896.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | No | e3 | Matte Tin (Sn) | Halogen Free | DUAL | 8 | 57W | 1 | S-PDSO-N5 | 7 ns | 5ns | 3 ns | 10 ns | 21A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 57W Tc | 0.052Ohm | 60 mJ | N-Channel | 890pF @ 75V | 52m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7465DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7465dpt1e3-datasheets-7224.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 64mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 8 ns | 9ns | 9 ns | 65 ns | -5A | 20V | SILICON | DRAIN | 60V | -3V | 1.5W Ta | 3.2A | 25A | 24.2 mJ | -60V | P-Channel | 64m Ω @ 5A, 10V | 3V @ 250μA | 3.2A Ta | 40nC @ 10V | 4.5V 10V | ±20V |
