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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMP4015SSSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4015sssq13-datasheets-7166.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 8 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 1 | Other Transistors | 9.1A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 1.45W Ta | 10.1A | 100A | 0.011Ohm | P-Channel | 4234pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 9.1A Ta | 47.5nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4427BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4427bdyt1e3-datasheets-7261.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 10.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 12 ns | 15ns | 15 ns | 242 ns | -12.6A | 12V | SILICON | 30V | -1.4V | 1.5W Ta | 9.7A | -30V | P-Channel | 10.5m Ω @ 12.6A, 10V | 1.4V @ 250μA | 9.7A Ta | 70nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SI7106DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7106dnt1e3-datasheets-6905.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 14 Weeks | Unknown | 6.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 25 ns | 15ns | 15 ns | 50 ns | 19.5A | 12V | SILICON | DRAIN | SWITCHING | 1.5V | 1.5W Ta | 60A | 45 mJ | 20V | N-Channel | 6.2m Ω @ 19.5A, 4.5V | 1.5V @ 250μA | 12.5A Ta | 27nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| BSZ160N10NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz160n10ns3gatma1-datasheets-7024.pdf | 8-PowerTDFN | 5 | 18 Weeks | no | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.1W Ta 63W Tc | 40A | 160A | 0.016Ohm | 80 mJ | N-Channel | 1700pF @ 50V | 16m Ω @ 20A, 10V | 3.5V @ 12μA | 8A Ta 40A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD24AN06LA0-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd24an06la0f085-datasheets-7033.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 2 days ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 75W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 118ns | 41 ns | 26 ns | 7.1A | 20V | SILICON | DRAIN | SWITCHING | 75W Tc | TO-252AA | 40A | 60V | N-Channel | 1850pF @ 25V | 19m Ω @ 40A, 10V | 2V @ 250μA | 7.1A Ta 40A Tc | 21nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5802NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntd5802nt4g-datasheets-6842.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 14 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 93.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 52ns | 8.5 ns | 39 ns | 16.4A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 93.75W Tc | 0.0078Ohm | 240 mJ | 40V | N-Channel | 5025pF @ 25V | 4.4m Ω @ 50A, 10V | 3.5V @ 250μA | 16.4A Ta 101A Tc | 100nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3504ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfr3504ztrpbf-datasheets-7073.pdf | 40V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | 2 | 12 Weeks | 9MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | 42A | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 40V | GULL WING | 260 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 74ns | 38 ns | 30 ns | 77A | 20V | SILICON | DRAIN | SWITCHING | 90W Tc | TO-252AA | 77 mJ | 40V | N-Channel | 1510pF @ 25V | 9m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| CSD17306Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17306 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 7.8 ns | 13.1ns | 6.4 ns | 18.4 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 1.1V | 3.2W Ta | 0.0054Ohm | 73 pF | 274 mJ | 30V | N-Channel | 2170pF @ 15V | 1.1 V | 3.7m Ω @ 22A, 8V | 1.6V @ 250μA | 24A Ta 100A Tc | 15.3nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||
| BSC520N15NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-bsc520n15ns3gatma1-datasheets-7094.pdf | 8-PowerTDFN | 5.35mm | 1.1mm | 6.1mm | Lead Free | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 57W | 1 | Not Qualified | R-PDSO-F5 | 7 ns | 4ns | 3 ns | 10 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 3V | 57W Tc | 0.052Ohm | 60 mJ | 150V | N-Channel | 890pF @ 75V | 3 V | 52m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTS4001NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-nts4001nt1g-datasheets-6789.pdf | 30V | 270mA | SC-70, SOT-323 | 2.2mm | 900μm | 1.35mm | Lead Free | 3 | 10 Weeks | No SVHC | 1Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 330mW | 1 | FET General Purpose Power | 17 ns | 23ns | 23 ns | 94 ns | 270mA | 20V | SILICON | SWITCHING | 1.2V | 330mW Ta | 0.27A | 30V | N-Channel | 33pF @ 5V | 1.2 V | 1.5 Ω @ 10mA, 4V | 1.5V @ 100μA | 270mA Ta | 1.3nC @ 5V | 2.5V 4V | ±20V | |||||||||||||||||||||||||||||||||||||||
| ZXMP4A16KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp4a16ktc-datasheets-6764.pdf | -40V | -9.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | No SVHC | 60mOhm | 3 | no | EAR99 | LOW THRESHOLD; FAST SWITCHING | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 9.5W | 1 | R-PSSO-G2 | 4 ns | 6ns | 17.1 ns | 36.8 ns | 9.9A | 20V | SILICON | DRAIN | SWITCHING | 40V | 2.15W Ta | -40V | P-Channel | 965pF @ 20V | 60m Ω @ 3.8A, 10V | 1V @ 250μA | 6.6A Ta | 29.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| EPC2037 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2037-datasheets-6807.pdf | Die | 12 Weeks | Die | 100V | N-Channel | 14pF @ 50V | 550mOhm @ 100mA, 5V | 2.5V @ 80μA | 1.7A Ta | 0.12nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP135H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsp135h6327xtsa1-datasheets-6832.pdf | TO-261-4, TO-261AA | 6.5mm | 1.5mm | 3.5mm | Lead Free | 4 | 10 Weeks | 4 | yes | EAR99 | Tin | No | 12A | e3 | 600V | Halogen Free | DUAL | GULL WING | 260 | 4 | Single | 30 | 1.8W | 1 | FET General Purpose Power | 5.4 ns | 5.6ns | 182 ns | 28 ns | 120mA | 20V | 600V | SILICON | DRAIN | 1.8W Ta | 130 ns | 600V | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI7431DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7431dpt1e3-datasheets-5285.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 174mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 23 ns | 49ns | 49 ns | 110 ns | -3.8A | 20V | SILICON | DRAIN | SWITCHING | 200V | -4V | 1.9W Ta | 2.2A | 30A | 45 mJ | -200V | P-Channel | -4 V | 174m Ω @ 3.8A, 10V | 4V @ 250μA | 2.2A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSC067N06LS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc067n06ls3gatma1-datasheets-6860.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 15 ns | 26ns | 7 ns | 37 ns | 15A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 200A | 0.0067Ohm | 47 mJ | N-Channel | 5100pF @ 30V | 6.7m Ω @ 50A, 10V | 2.2V @ 35μA | 15A Ta 50A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI4100DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4100dyt1e3-datasheets-6999.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 10 ns | 15 ns | 4.4A | 20V | SILICON | SWITCHING | 100V | 2.5W Ta 6W Tc | 20A | 0.063Ohm | N-Channel | 600pF @ 50V | 63m Ω @ 4.4A, 10V | 4.5V @ 250μA | 6.8A Tc | 20nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| CSD19537Q3 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19537q3-datasheets-7015.pdf | 8-PowerVDFN | 3.3mm | 1.1mm | 3.3mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Copper, Tin | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD19537 | 1 | 2.8W | 1 | 150°C | 5 ns | 3ns | 3 ns | 10 ns | 9.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 2.8W Ta 83W Tc | 55 mJ | 100V | N-Channel | 1680pF @ 50V | 14.5m Ω @ 10A, 10V | 3.6V @ 250μA | 50A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STD7NS20T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std7ns20t4-datasheets-6828.pdf | 200V | 7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 400mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD7 | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 15ns | 12 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 3V | 45W Tc | TO-252AA | 7A | 28A | 60 mJ | 200V | N-Channel | 540pF @ 25V | 400m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMG1012T-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg1012t7-datasheets-6009.pdf | SOT-523 | 1.7mm | 800μm | 850μm | Lead Free | 14 Weeks | 2.012816mg | No SVHC | 400MOhm | 3 | Tin | No | 1 | Single | 280mW | 1 | SOT-523 | 60.67pF | 5.1 ns | 7.4ns | 12.3 ns | 26.7 ns | 630mA | 6V | 20V | 1V | 280mW Ta | 300mOhm | 20V | N-Channel | 60.67pF @ 16V | 400mOhm @ 600mA, 4.5V | 1V @ 250μA | 630mA Ta | 0.74nC @ 4.5V | 400 mΩ | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138PW,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-bss138pw115-datasheets-6060.pdf | SC-70, SOT-323 | 3 | 4 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 30 | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 260mW Ta 830mW Tc | N-Channel | 50pF @ 10V | 1.6 Ω @ 300mA, 10V | 1.5V @ 250μA | 320mA Ta | 0.8nC @ 4.5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002KW | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/onsemiconductor-2n7002kw-datasheets-6679.pdf | SC-70, SOT-323 | 2.92mm | 1.2mm | 1.3mm | Lead Free | 11 Weeks | 30mg | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | Tin | Single | 300mW | 1 | SC-70 (SOT323) | 50pF | 20 ns | 60 ns | 310mA | 20V | 60V | 2.1V | 350mW Ta | 3Ohm | 60V | N-Channel | 50pF @ 25V | 1.6Ohm @ 500mA, 10V | 2.1V @ 250μA | 310mA Ta | 1.6 Ω | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR6215TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr6215trpbf-datasheets-6749.pdf | -150V | -13A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 295mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 110W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | -150V | SILICON | DRAIN | SWITCHING | 150V | -4V | 110W Tc | TO-252AA | 240 ns | 44A | -150V | P-Channel | 860pF @ 25V | -4 V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| DMN55D0UT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn55d0ut7-datasheets-6347.pdf | SOT-523 | 1.6mm | 750μm | 800μm | Lead Free | 3 | 18 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 200mW | 1 | FET General Purpose Power | 160mA | 12V | SILICON | 800mV | 200mW Ta | 4Ohm | 50V | N-Channel | 25pF @ 10V | 4 Ω @ 100mA, 4V | 1V @ 250μA | 160mA Ta | 2.5V 4V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSS84 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-bss84-datasheets-6273.pdf | -50V | -130mA | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 930μm | 3.05mm | Lead Free | 8 Weeks | No SVHC | 10Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | Tin | No | 13A | 50V | Single | 360mW | 1 | SOT-23-3 | 73pF | 2.5 ns | 6.3ns | 6.3 ns | 10 ns | 130mA | 20V | -50V | 50V | -1.7V | 360mW Ta | 10Ohm | -50V | P-Channel | 73pF @ 25V | -1.7 V | 10Ohm @ 100mA, 5V | 2V @ 1mA | 130mA Ta | 1.3nC @ 5V | 10 Ω | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SSM3K36MFV,L3F | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-723 | 12 Weeks | 3 | No | 30 ns | 75 ns | 500mA | 10V | 20V | 150mW Ta | N-Channel | 46pF @ 10V | 630m Ω @ 200mA, 5V | 1V @ 1mA | 500mA Ta | 1.23nC @ 4V | 1.5V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84PH6327XTSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bss84ph6327xtsa2-datasheets-6308.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 900μm | 1.3mm | Lead Free | 3 | 10 Weeks | No SVHC | 12Ohm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Tin | No | 17A | e3 | 60V | Halogen Free | DUAL | GULL WING | 1 | Single | 360mW | 1 | Other Transistors | 6.7 ns | 16.2ns | 8.6 ns | 170mA | 20V | -60V | SILICON | SWITCHING | -1.5V | 360mW Ta | P-Channel | 19pF @ 25V | -1.5 V | 8 Ω @ 170mA, 10V | 2V @ 20μA | 170mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMN6075S-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn6075s7-datasheets-6423.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | 260 | 1 | 30 | 800mW | 150°C | 3.5 ns | 35 ns | 2A | 20V | 800mW Ta | 60V | N-Channel | 606pF @ 20V | 85m Ω @ 3.2A, 10V | 3V @ 250μA | 2A Ta | 12.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG2305UX-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg2305ux13-datasheets-5829.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 23 Weeks | 7.994566mg | No SVHC | 52MOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 1 | Other Transistors | 10.8 ns | 13.7ns | 34.7 ns | 79.3 ns | 4.2A | 8V | SILICON | SWITCHING | 20V | 20V | -900mV | 1.4W Ta | P-Channel | 808pF @ 15V | 52m Ω @ 4.2A, 4.5V | 900mV @ 250μA | 4.2A Ta | 10.2nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS84,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-bss84215-datasheets-6570.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 3 | 4 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | 1 | 250mW | 1 | 150°C | 3 ns | 7 ns | -130mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 250mW Tc | -50V | P-Channel | 45pF @ 25V | 10 Ω @ 130mA, 10V | 2V @ 1mA | 130mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3099L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp3099l7-datasheets-6472.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 23 Weeks | 7.994566mg | No SVHC | 3 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 1.08W | 1 | Other Transistors | 150°C | 4.8 ns | 5ns | 15 ns | 31 ns | -3.8A | 20V | SILICON | SWITCHING | 30V | -2.1V | 1.08W Ta | 0.065Ohm | -30V | P-Channel | 563pF @ 25V | 65m Ω @ 3.8A, 10V | 2.1V @ 250μA | 3.8A Ta | 5.2nC @ 4.5V | 4.5V 10V | ±20V |
