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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSC123N10LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc123n10lsgatma1-datasheets-8784.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 114W | 1 | Not Qualified | R-PDSO-F5 | 25ns | 10.6A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 114W Tc | N-Channel | 4900pF @ 50V | 12.3m Ω @ 50A, 10V | 2.4V @ 72μA | 10.6A Ta 71A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2470K4-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2470k4g-datasheets-7477.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.5146mm | 6.1mm | Lead Free | 2 | 14 Weeks | 3.949996g | 3 | EAR99 | e3 | Matte Tin (Sn) - annealed | GULL WING | NOT SPECIFIED | DN2470 | 1 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30 ns | 45ns | 60 ns | 45 ns | 170mA | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta | TO-252AA | 0.5A | 700V | N-Channel | 540pF @ 25V | 42 Ω @ 100mA, 0V | 170mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4850EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4850eyt1e3-datasheets-8689.pdf | 60V | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | 6A | e3 | 60V | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.7W | 1 | FET General Purpose Powers | 175°C | 10 ns | 10ns | 10 ns | 25 ns | 8.5A | 20V | SILICON | SWITCHING | 3V | 1.7W Ta | 60V | N-Channel | 1 V | 22m Ω @ 6A, 10V | 3V @ 250μA | 6A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD19533Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD19533 | 1 | Single | NOT SPECIFIED | 3.2W | 1 | FET General Purpose Power | 150°C | 6 ns | 6ns | 5 ns | 16 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 100V | 2.8V | 3.2W Ta 96W Tc | N-Channel | 2670pF @ 50V | 9.4m Ω @ 13A, 10V | 3.4V @ 250μA | 100A Ta | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI4401BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4401bdyt1e3-datasheets-8750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 14MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 150°C | 16 ns | 15ns | 15 ns | 97 ns | -10.5A | 20V | SILICON | 40V | -1V | 1.5W Ta | -40V | P-Channel | 14m Ω @ 10.5A, 10V | 3V @ 250μA | 8.7A Ta | 55nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3110ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 12 Weeks | 14MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 1 | 30 | 140W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | TO-252AA | 250A | 100V | N-Channel | 3980pF @ 25V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| STS7PF30L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts7pf30l-datasheets-8618.pdf | -30V | -7A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.25mm | 4mm | Lead Free | 8 | 40 Weeks | 21mOhm | 8 | EAR99 | No | 7A | 30V | DUAL | GULL WING | STS7P | 8 | 2.5W | 1 | Other Transistors | 68 ns | 54ns | 23 ns | 65 ns | 7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Tc | -30V | P-Channel | 2600pF @ 25V | 21m Ω @ 3.5A, 10V | 2.5V @ 250μA | 7A Tc | 38nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD034N06N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd034n06n3gatma1-datasheets-8645.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 167W | 1 | Not Qualified | R-PSSO-G2 | 38 ns | 161ns | 16 ns | 63 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | TO-252AA | 400A | N-Channel | 11000pF @ 30V | 3.4m Ω @ 100A, 10V | 4V @ 93μA | 100A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7818DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7818dnt1e3-datasheets-8452.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 135mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | R-XDSO-C5 | 10 ns | 10ns | 10 ns | 25 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 150V | 4V | 1.5W Ta | 2.2A | 4 mJ | N-Channel | 135m Ω @ 3.4A, 10V | 4V @ 250μA | 2.2A Ta | 30nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMC5614P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc5614p-datasheets-7041.pdf | -60V | -5.7A | 8-PowerWDFN | 3.3mm | 725μm | 3.3mm | Lead Free | 5 | 10 Weeks | 200mg | No SVHC | 100MOhm | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | FLAT | 260 | Single | 30 | 2.1W | 1 | Other Transistors | S-PDSO-F5 | 10 ns | 11ns | 11 ns | 32 ns | -5.7A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1.95V | 2.1W Ta 42W Tc | 23A | -60V | P-Channel | 1055pF @ 30V | 100m Ω @ 5.7A, 10V | 3V @ 250μA | 5.7A Ta 13.5A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| CSD18533Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD18533 | Single | 3.2W | 1 | FET General Purpose Powers | 5.2 ns | 5.5ns | 2 ns | 15 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.9V | 3.2W Ta 116W Tc | 9 pF | N-Channel | 2750pF @ 30V | 1.9 V | 5.9m Ω @ 18A, 10V | 2.3V @ 250μA | 17A Ta 100A Tc | 36nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMC86139P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc86139p-datasheets-8481.pdf | 8-PowerWDFN | 3.3mm | 800μm | 3.3mm | Lead Free | 5 | 14 Weeks | 165.33333mg | No SVHC | 8 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | 1 | Single | 40W | 1 | 150°C | S-PDSO-N5 | 11 ns | 2.5ns | 4 ns | 17 ns | -4.4A | 25V | SILICON | DRAIN | SWITCHING | 100V | -3V | 2.3W Ta 40W Tc | 30A | 0.067Ohm | -100V | P-Channel | 1335pF @ 50V | 40ns | 30ns | 67m Ω @ 4.4A, 10V | 4V @ 250μA | 4.4A Ta 15A Tc | 22nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| SI7336ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7336adpt1e3-datasheets-8486.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 3mOhm | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 24 ns | 16ns | 32 ns | 90 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5.4W Ta | 70A | 30V | N-Channel | 5600pF @ 15V | 1 V | 3m Ω @ 25A, 10V | 3V @ 250μA | 30A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD60R380P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r380p6atma1-datasheets-8528.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3.949996g | 3 | 1 | PG-TO252-3 | 877pF | 12 ns | 6ns | 7 ns | 33 ns | 10.6A | 20V | 600V | 600V | 83W Tc | 342mOhm | 600V | N-Channel | 877pF @ 100V | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 10.6A Tc | 19nC @ 10V | 380 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2168H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2168hele-datasheets-8544.pdf | 30V | 30A | 32.766mm | SC-100, SOT-669 | 14.986mm | Black | Lead Free | Aluminium, Plastic | 4 | 16 Weeks | 5 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 8 ns | 20ns | 4 ns | 40 ns | 30A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 15W Tc | N-Channel | 1730pF @ 10V | 7.9m Ω @ 15A, 10V | 30A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIR622DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir622dpt1ge3-datasheets-8525.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 150V | 104W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 51.6A Tc | 31nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC6686P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdmc6686p-datasheets-8568.pdf | 8-PowerWDFN | 10 Weeks | 26.8mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 56A | 20V | 2.3W Ta 40W Tc | P-Channel | 13200pF @ 10V | 4m Ω @ 18A, 4.5V | 1V @ 250μA | 18A Ta 56A Tc | 122nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9214TRPBF | Vishay Siliconix | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 50W | 1 | 150°C | DPAK | 220pF | 11 ns | 14ns | 17 ns | 20 ns | -2.7A | 20V | 250V | -4V | 50W Tc | 3Ohm | -250V | P-Channel | 220pF @ 25V | 3Ohm @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7113DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7113dnt1ge3-datasheets-8522.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | 5 | 14 Weeks | Unknown | 134mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | 8 | 1 | Single | 3.7W | 1 | S-PDSO-F5 | 30 ns | 110ns | 40 ns | 51 ns | 3.5A | 20V | SILICON | DRAIN | SWITCHING | 100V | -1V | 3.7W Ta 52W Tc | 20A | -100V | P-Channel | 1480pF @ 50V | 134m Ω @ 4A, 10V | 3V @ 250μA | 13.2A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD082N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd082n10n3gatma1-datasheets-8602.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 18 ns | 42ns | 8 ns | 31 ns | 80A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 125W Tc | 0.0082Ohm | 110 mJ | N-Channel | 3980pF @ 50V | 8.2m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7848BDP-T1-GE3 | Vishay Siliconix | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7848bdpt1e3-datasheets-4537.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 4.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 10 ns | 15ns | 10 ns | 30 ns | 47A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 3V | 4.2W Ta 36W Tc | 50A | N-Channel | 2000pF @ 20V | 9m Ω @ 16A, 10V | 3V @ 250μA | 47A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIS443DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis443dnt1ge3-datasheets-8385.pdf | PowerPAK® 1212-8 | 1.1684mm | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 1 | 3.7W | 1 | 150°C | S-PDSO-C5 | 12 ns | 10ns | 10 ns | 48 ns | -13.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | -1V | 3.7W Ta 52W Tc | 0.035A | -40V | P-Channel | 4370pF @ 20V | 11.7m Ω @ 15A, 10V | 2.3V @ 250μA | 35A Tc | 135nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC900N20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc900n20ns3gatma1-datasheets-8410.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 62.5W | 1 | Not Qualified | R-PDSO-F5 | 4ns | 15.2A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 0.09Ohm | N-Channel | 920pF @ 100V | 90m Ω @ 7.6A, 10V | 4V @ 30μA | 15.2A Tc | 11.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC070N10NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc070n10ns3gatma1-datasheets-8016.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 114W | 1 | Not Qualified | R-PDSO-F5 | 10ns | 90A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.7V | 114W Tc | 360A | 0.007Ohm | N-Channel | 4000pF @ 50V | 7m Ω @ 50A, 10V | 3.5V @ 75μA | 90A Tc | 55nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TP5335K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp5335k1g-datasheets-8147.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 20 Weeks | 1.437803g | 3 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | Other Transistors | Not Qualified | 150°C | 20 ns | 15ns | 15 ns | 25 ns | -85mA | 20V | SILICON | SWITCHING | 350V | 360mW Ta | 0.085A | 22 pF | -350V | P-Channel | 110pF @ 25V | 30 Ω @ 200mA, 10V | 2.4V @ 1mA | 85mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86102L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc86102l-datasheets-8179.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 13 Weeks | 165.33333mg | No SVHC | 24MOhm | 8 | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 41W | 1 | FET General Purpose Power | S-PDSO-N5 | 7.7 ns | 2.2ns | 2.4 ns | 19 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.3W Ta 41W Tc | 7A | 30A | 63 mJ | 100V | N-Channel | 1330pF @ 50V | 23m Ω @ 7A, 10V | 3V @ 250μA | 7A Ta 18A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL530NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl530nstrlpbf-datasheets-7930.pdf | 100V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 120mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.2 ns | 53ns | 26 ns | 30 ns | 17A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 79W Tc | 210 ns | 60A | 100V | N-Channel | 800pF @ 25V | 2 V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSZ042N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bsz042n06nsatma1-datasheets-8165.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | 8 | 2.5W | 1 | S-PDSO-N3 | 7ns | 40A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | 0.0042Ohm | 44 pF | N-Channel | 2000pF @ 30V | 4.2m Ω @ 20A, 10V | 2.8V @ 36μA | 17A Ta 40A Tc | 27nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2039 | EPC | $1.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2039-datasheets-8000.pdf | Die | 12 Weeks | Die | 80V | N-Channel | 210pF @ 40V | 25mOhm @ 6A, 5V | 2.5V @ 2mA | 6.8A Ta | 2.4nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD13AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdd13an06a0-datasheets-7500.pdf | 60V | 9.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | FDD13AN06 | Single | 115W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 77ns | 25 ns | 26 ns | 50A | 20V | 60V | SILICON | DRAIN | SWITCHING | 4V | 115W Tc | TO-252AA | 56 mJ | 60V | N-Channel | 1350pF @ 25V | 4 V | 13.5m Ω @ 50A, 10V | 4V @ 250μA | 9.9A Ta 50A Tc | 29nC @ 10V | 6V 10V | ±20V |
