Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD17303Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/texasinstruments-csd17303q5-datasheets-7576.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17303 | 8 | Single | 3.2W | 1 | FET General Purpose Power | 11.4 ns | 16ns | 10.4 ns | 27 ns | 100A | 10V | SILICON | DRAIN | SWITCHING | 1.1V | 3.2W Ta | 200A | 0.0037Ohm | 530 mJ | 30V | N-Channel | 3420pF @ 15V | 1.1 V | 2.4m Ω @ 25A, 8V | 1.6V @ 250μA | 32A Ta 100A Tc | 23nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||
| IPD60R380C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r380c6atma1-datasheets-9304.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 83W | 1 | R-PSSO-G2 | 15 ns | 10ns | 9 ns | 110 ns | 10.6A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 600V | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDD86250 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd86250-datasheets-9332.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.517mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 45MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | 1 | Single | 3.1W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 11.2 ns | 3.7ns | 4 ns | 20 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 2.9V | 3.1W Ta 132W Tc | 8A | 40A | 150V | N-Channel | 2110pF @ 75V | 22m Ω @ 8A, 10V | 4V @ 250μA | 8A Ta 50A Tc | 33nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD95R750P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd95r750p7atma1-datasheets-9315.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 950V | 73W Tc | N-Channel | 712pF @ 400V | 750m Ω @ 4.5A, 10V | 3.5V @ 220μA | 9A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7336ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7336adpt1e3-datasheets-8486.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 24 ns | 16ns | 32 ns | 90 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1V | 5.4W Ta | 70A | 0.003Ohm | 30V | N-Channel | 5600pF @ 15V | 1 V | 3m Ω @ 25A, 10V | 3V @ 250μA | 30A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FDS5670 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fds5670-datasheets-9325.pdf | 60V | 10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | No SVHC | 14MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 10A | e3 | 60V | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 16 ns | 10ns | 23 ns | 50 ns | 10A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.4V | 2.5W Ta | 60V | N-Channel | 2900pF @ 15V | 2.4 V | 14m Ω @ 10A, 10V | 4V @ 250μA | 10A Ta | 70nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMC8321L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8321l-datasheets-9319.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | Lead Free | 5 | 13 Weeks | 32.13mg | 2.5MOhm | 8 | ACTIVE (Last Updated: 8 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 40W | 1 | FET General Purpose Power | S-PDSO-N5 | 12 ns | 6.1ns | 4.9 ns | 32 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 40W Tc | MO-240BA | 22A | 40V | N-Channel | 3900pF @ 20V | 2.5m Ω @ 22A, 10V | 3V @ 250μA | 22A Ta 49A Tc | 61nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BS250P | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-bs250p-datasheets-9413.pdf&product=diodesincorporated-bs250p-6384664 | -45V | -230mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 14Ohm | 3 | yes | EAR99 | Tin | e3 | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Other Transistors | Not Qualified | 230mA | 20V | SILICON | 45V | 700mW Ta | TO-92 | P-Channel | 60pF @ 10V | 14 Ω @ 200mA, 10V | 3.5V @ 1mA | 230mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7852ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7852adpt1ge3-datasheets-9431.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 17MOhm | 8 | yes | EAR99 | No | S17-0173_SINGLE | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 16 ns | 9ns | 9 ns | 26 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 5W Ta 62.5W Tc | 60A | 45 mJ | 80V | N-Channel | 1825pF @ 40V | 17m Ω @ 10A, 10V | 4.5V @ 250μA | 30A Tc | 45nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUD15N15-95-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sud15n1595e3-datasheets-9092.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 95mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 62W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 35ns | 30 ns | 17 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.7W Ta 62W Tc | 25A | 150V | N-Channel | 900pF @ 25V | 2 V | 95m Ω @ 15A, 10V | 2V @ 250μA (Min) | 15A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPD06N80C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spd06n80c3atma1-datasheets-9163.pdf | 800V | 6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3 | 83W | 1 | PG-TO252-3 | 785pF | 25 ns | 15ns | 8 ns | 72 ns | 6A | 20V | 800V | 800V | 83W Tc | 780mOhm | N-Channel | 785pF @ 100V | 900mOhm @ 3.8A, 10V | 3.9V @ 250μA | 6A Ta | 41nC @ 10V | 900 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD65N55F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std65n55f3-datasheets-9169.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD65N | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 50ns | 11.5 ns | 35 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | 80A | 0.0085Ohm | 55V | N-Channel | 2200pF @ 25V | 8.5m Ω @ 32A, 10V | 4V @ 250μA | 80A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC16DN25NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc16dn25ns3gatma1-datasheets-8895.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 62.5W | 1 | Not Qualified | R-PDSO-F5 | 4ns | 10.9A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 44A | N-Channel | 920pF @ 100V | 165m Ω @ 5.5A, 10V | 4V @ 32μA | 10.9A Tc | 11.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N10-8M9L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqd50n108m9lge3-datasheets-8369.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.22mm | 2.38mm | 6.73mm | 12 Weeks | 1.437803g | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 12 ns | 12ns | 120 ns | 95 ns | 50A | 2V | 100V | 136W Tc | N-Channel | 2950pF @ 25V | 8.9m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7454DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7454dpt1e3-datasheets-8932.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 34mOhm | 8 | yes | EAR99 | Tin | No | 5A | e3 | 100V | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 10ns | 10 ns | 35 ns | 5A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 100V | N-Channel | 4 V | 34m Ω @ 7.8A, 10V | 4V @ 250μA | 5A Ta | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSC500N20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsc500n20ns3gatma1-datasheets-8902.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 5ns | 24A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 96W Tc | 97A | 0.05Ohm | 120 mJ | N-Channel | 1580pF @ 100V | 50m Ω @ 22A, 10V | 4V @ 60μA | 24A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NDT456P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-ndt456p-datasheets-8942.pdf | -30V | -7.3A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 6.7mm | Lead Free | 4 | 18 Weeks | 250.2mg | No SVHC | 30mOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 1 | Single | 3W | 1 | Other Transistors | 150°C | 10 ns | 65ns | 70 ns | 70 ns | 7.5A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.5V | 3W Ta | 20A | -30V | P-Channel | 1440pF @ 15V | 1.5 V | 30m Ω @ 7.5A, 10V | 3V @ 250μA | 7.5A Ta | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FQB33N10LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb33n10ltm-datasheets-8985.pdf | 100V | 33A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 10 Weeks | 1.31247g | No SVHC | 52MOhm | 3 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 470ns | 120 ns | 70 ns | 33A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3.75W Ta 127W Tc | 100V | N-Channel | 1630pF @ 25V | 52m Ω @ 16.5A, 10V | 2V @ 250μA | 33A Tc | 40nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI7456DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7456dpt1e3-datasheets-9024.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 25mOhm | 8 | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | FLAT | 8 | 1 | Single | 5.2W | 1 | R-PDSO-F5 | 14 ns | 10ns | 10 ns | 46 ns | 5.7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 40A | 45 mJ | 100V | N-Channel | 60ns | 2 V | 25m Ω @ 9.3A, 10V | 4V @ 250μA | 5.7A Ta | 44nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSB013NE2LXIXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsb013ne2lxixuma1-datasheets-9071.pdf | 3-WDSON | 3 | 26 Weeks | 7 | yes | EAR99 | Silver | e4 | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 2.8W | 1 | Not Qualified | R-MBCC-N3 | 6.4ns | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 57W Tc | 400A | N-Channel | 4400pF @ 12V | 1.3m Ω @ 30A, 10V | 2V @ 250μA | 36A Ta 163A Tc | 62nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIR876ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir876adpt1ge3-datasheets-8974.pdf | PowerPAK® SO-8 | 1.17mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5MOhm | 8 | EAR99 | No | S17-0173-Single | DUAL | C BEND | 8 | 1 | Single | 5W | 1 | FET General Purpose Power | 150°C | R-PDSO-C5 | 11 ns | 16ns | 16 ns | 28 ns | 15.2A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 5W Ta 62.5W Tc | 40A | 100V | N-Channel | 1630pF @ 50V | 10.8m Ω @ 20A, 10V | 2.8V @ 250μA | 40A Tc | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDD86540 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdd86540-datasheets-8909.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 127W | 1 | FET General Purpose Power | R-PSSO-G2 | 26 ns | 15ns | 6.9 ns | 31 ns | 21.5A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 127W Tc | 50A | 228 mJ | 60V | N-Channel | 6340pF @ 30V | 4.1m Ω @ 21.5A, 10V | 4V @ 250μA | 21.5A Ta 50A Tc | 90nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSC009NE2LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc009ne2ls5atma1-datasheets-8961.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | yes | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 10 ns | 33ns | 19 ns | 48 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 74W Tc | 41A | 400A | 0.00125Ohm | 90 mJ | N-Channel | 3900pF @ 12V | 0.9m Ω @ 30A, 10V | 2V @ 250μA | 41A Ta 100A Tc | 57nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| DN2470K4-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/microchiptechnology-dn2470k4g-datasheets-7477.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.5146mm | 6.1mm | Lead Free | 2 | 14 Weeks | 3.949996g | 3 | EAR99 | e3 | Matte Tin (Sn) - annealed | GULL WING | NOT SPECIFIED | DN2470 | 1 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30 ns | 45ns | 60 ns | 45 ns | 170mA | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta | TO-252AA | 0.5A | 700V | N-Channel | 540pF @ 25V | 42 Ω @ 100mA, 0V | 170mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI4850EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4850eyt1e3-datasheets-8689.pdf | 60V | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | 6A | e3 | 60V | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.7W | 1 | FET General Purpose Powers | 175°C | 10 ns | 10ns | 10 ns | 25 ns | 8.5A | 20V | SILICON | SWITCHING | 3V | 1.7W Ta | 60V | N-Channel | 1 V | 22m Ω @ 6A, 10V | 3V @ 250μA | 6A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| CSD19533Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD19533 | 1 | Single | NOT SPECIFIED | 3.2W | 1 | FET General Purpose Power | 150°C | 6 ns | 6ns | 5 ns | 16 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 100V | 2.8V | 3.2W Ta 96W Tc | N-Channel | 2670pF @ 50V | 9.4m Ω @ 13A, 10V | 3.4V @ 250μA | 100A Ta | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI4401BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4401bdyt1e3-datasheets-8750.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 14MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 150°C | 16 ns | 15ns | 15 ns | 97 ns | -10.5A | 20V | SILICON | 40V | -1V | 1.5W Ta | -40V | P-Channel | 14m Ω @ 10.5A, 10V | 3V @ 250μA | 8.7A Ta | 55nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLR3110ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlr3110ztrpbf-datasheets-8802.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 12 Weeks | 14MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 1 | 30 | 140W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 24 ns | 110ns | 48 ns | 33 ns | 42A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | TO-252AA | 250A | 100V | N-Channel | 3980pF @ 25V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IRFR4615TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfu4615pbf-datasheets-2653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 1 | 30 | 144W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5V | 144W Tc | TO-252AA | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 5 V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI4896DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4896dyt1e3-datasheets-8718.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 16.5mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.56W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 11ns | 11 ns | 40 ns | 9.5A | 20V | SILICON | 2V | 1.56W Ta | 6.7A | 80V | N-Channel | 2 V | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 6.7A Ta | 41nC @ 10V | 6V 10V | ±20V |
