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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIRC16DP-T1-GE3 | Vishay Siliconix | $2.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sirc16dpt1ge3-datasheets-6826.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 25V | 54.3W Tc | N-Channel | 5150pF @ 10V | 0.96m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 48nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7414DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7414dnt1e3-datasheets-7511.pdf | PowerPAK® 1212-8 | 3.05mm | 1.12mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 25mOhm | 8 | yes | EAR99 | No | SI7414DN-T1-E3 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 150°C | S-XDSO-C5 | 15 ns | 12ns | 12 ns | 30 ns | 5.6A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.5W Ta | 30A | 60V | N-Channel | 3 V | 25m Ω @ 8.7A, 10V | 3V @ 250μA | 5.6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI3440DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si3440dvt1ge3-datasheets-7527.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 375mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 6 | 1 | Single | 1.14W | 1 | 8 ns | 10ns | 15 ns | 20 ns | 1.5A | 20V | SILICON | SWITCHING | 150V | 4V | 1.14W Ta | N-Channel | 4 V | 375m Ω @ 1.5A, 10V | 4V @ 250μA | 1.2A Ta | 8nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP10A18KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp10a18ktc-datasheets-7531.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 150mOhm | 3 | no | EAR99 | LOW THRESHOLD | Tin | No | e3 | GULL WING | 260 | 3 | 1 | Single | 40 | 4.3W | 1 | R-PSSO-G2 | 4.9 ns | 6.8ns | 17.9 ns | 33.9 ns | 5.9A | 20V | SILICON | DRAIN | SWITCHING | 100V | -4V | 2.17W Ta | -100V | P-Channel | 1055pF @ 50V | 150m Ω @ 2.8A, 10V | 4V @ 250μA | 3.8A Ta | 26.9nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSC027N04LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc027n04lsgatma1-datasheets-7491.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 83W | 1 | Not Qualified | R-PDSO-F5 | 5.6ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.5W Ta 83W Tc | 24A | 400A | N-Channel | 6800pF @ 20V | 2.7m Ω @ 50A, 10V | 2V @ 49μA | 24A Ta 100A Tc | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDMC510P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc510p-datasheets-7536.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 5 | 23 Weeks | 165.33333mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | DUAL | Single | 41W | 1 | Other Transistors | S-PDSO-N5 | 15 ns | 34ns | 170 ns | 338 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 2.3W Ta 41W Tc | 54A | 50A | 37 mJ | -20V | P-Channel | 7860pF @ 10V | 8m Ω @ 12A, 4.5V | 1V @ 250μA | 12A Ta 18A Tc | 116nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| AON6411 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | Lead Free | 18 Weeks | 85A | 20V | 7.3W Ta 156W Tc | P-Channel | 10290pF @ 10V | 2.1m Ω @ 20A, 10V | 1.3V @ 250μA | 47A Ta 85A Tc | 330nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP40NF03L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp40nf03l-datasheets-7588.pdf | 30V | 40A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | No SVHC | 22mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | STP40N | 3 | Single | 70W | 1 | FET General Purpose Power | 14 ns | 80ns | 16 ns | 25 ns | 40A | 16V | SILICON | DRAIN | SWITCHING | 1.7V | 70W Tc | TO-220AB | 160A | 250 mJ | 30V | N-Channel | 770pF @ 25V | 22m Ω @ 20A, 10V | 2.5V @ 250μA | 40A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IPD122N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd122n10n3gatma1-datasheets-6970.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 59A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 94W Tc | TO-252AA | 0.0122Ohm | 70 mJ | N-Channel | 2500pF @ 50V | 12.2m Ω @ 46A, 10V | 3.5V @ 46μA | 59A Tc | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd86102-datasheets-7608.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.6 ns | 3ns | 2.9 ns | 13.4 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 3.1V | 3.1W Ta 62W Tc | 8A | 40A | 0.024Ohm | 100V | N-Channel | 1035pF @ 50V | 24m Ω @ 8A, 10V | 4V @ 250μA | 8A Ta 36A Tc | 19nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC109N10NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc109n10ns3gatma1-datasheets-6847.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 78W | 1 | Not Qualified | R-PDSO-F5 | 12 ns | 7ns | 5 ns | 19 ns | 63A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.7V | 78W Tc | 252A | 70 mJ | N-Channel | 2500pF @ 50V | 10.9m Ω @ 46A, 10V | 3.5V @ 45μA | 63A Tc | 35nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSZ520N15NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz520n15ns3gatma1-datasheets-6896.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | No | e3 | Matte Tin (Sn) | Halogen Free | DUAL | 8 | 57W | 1 | S-PDSO-N5 | 7 ns | 5ns | 3 ns | 10 ns | 21A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 57W Tc | 0.052Ohm | 60 mJ | N-Channel | 890pF @ 75V | 52m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NDS0610 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-nds0610-datasheets-6367.pdf | -60V | -120mA | TO-236-3, SC-59, SOT-23-3 | 1.11mm | 3.05mm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 10Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 360mW | 1 | Other Transistors | 150°C | 2.5 ns | 6.3ns | 6.3 ns | 10 ns | -120mA | 20V | -60V | SILICON | SWITCHING | 60V | -1.7V | 360mW Ta | 5 pF | -60V | P-Channel | 79pF @ 25V | -1.7 V | 10 Ω @ 500mA, 10V | 3.5V @ 1mA | 120mA Ta | 2.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDS2572 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds2572-datasheets-7375.pdf | 150V | 4.9A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | 130mg | No SVHC | 47mOhm | 8 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 14 ns | 4ns | 22 ns | 44 ns | 4.9A | 20V | SILICON | SWITCHING | 4V | 2.5W Ta | 150V | N-Channel | 2050pF @ 25V | 47m Ω @ 4.9A, 10V | 4V @ 250μA | 4.9A Tc | 38nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PSMN1R8-40YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn1r840ylc115-datasheets-7454.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | EAR99 | HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 272W | 1 | 32.2 ns | 37ns | 31.7 ns | 62.5 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 272W Tc | MO-235 | N-Channel | 6680pF @ 20V | 1.8m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 96nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4306GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvn4306gta-datasheets-7467.pdf | 60V | 2.1A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 330mOhm | 4 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3W | 1 | FET General Purpose Powers | 8 ns | 25ns | 16 ns | 30 ns | 2.1A | 20V | SILICON | DRAIN | SWITCHING | 1.3V | 3W Ta | 60V | N-Channel | 350pF @ 25V | 330m Ω @ 3A, 10V | 3V @ 1mA | 2.1A Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STD11N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std11n60m2ep-datasheets-7486.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 11 Weeks | ACTIVE (Last Updated: 8 months ago) | STD11 | 600V | 85W Tc | N-Channel | 390pF @ 100V | 595m Ω @ 3.75A, 10V | 4.75V @ 250μA | 7.5A Tc | 12.4nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD2N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std2n95k5-datasheets-7286.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 17 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | GULL WING | STD2N95 | 1 | Single | 1 | R-PSSO-G2 | 8.5 ns | 13.5ns | 32.5 ns | 20.5 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 45W Tc | 2A | 8A | 5Ohm | 50 mJ | 950V | N-Channel | 105pF @ 100V | 5 Ω @ 1A, 10V | 5V @ 100μA | 2A Tc | 10nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R2-25YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn1r225yl115-datasheets-7218.pdf&product=nexperiausainc-psmn1r225yl115-6384319 | SOT-1023, 4-LFPAK | Lead Free | 4 | 12 Weeks | No SVHC | 1.2MOhm | 4 | EAR99 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 121W | 1 | 69 ns | 125ns | 56 ns | 94 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 121W Tc | 815A | 677 mJ | 25V | N-Channel | 6380pF @ 12V | 1.2m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-30YLE,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r030yle115-datasheets-7279.pdf | 12.7mm | SC-100, SOT-669 | 15.875mm | Black | Metal | 4 | 12 Weeks | 4 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 272W | 1 | 32.7 ns | 55.7ns | 29.5 ns | 41.5 ns | 100A | 20V | 30V | DRAIN | SWITCHING | 272W Tc | MO-235 | 0.0035Ohm | 370 mJ | N-Channel | 5217pF @ 15V | 2m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 87nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN013-100YSEX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn013100ysex-datasheets-7170.pdf | 12.7mm | SC-100, SOT-669 | 25.4mm | Black, Clear | Lead Free | Metal | 4 | 12 Weeks | 4 | No | YES | GULL WING | 4 | 1 | Single | 238W | 1 | 16 ns | 23ns | 21 ns | 42 ns | 82A | 20V | 100V | DRAIN | SWITCHING | 238W Tc | MO-235 | 330A | 100V | N-Channel | 3775pF @ 50V | 63ns | 39ns | 13m Ω @ 20A, 10V | 4V @ 1mA | 82A Tj | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD18543Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 900μm | 3.3mm | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 800μm | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | CSD18543 | 1 | Single | 2.8W | 1 | 150°C | 9 ns | 8 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 66W Tc | 6.2 pF | 55 mJ | 60V | N-Channel | 1150pF @ 30V | 15.6m Ω @ 12A, 4.5V | 2.7V @ 250μA | 12A Ta 60A Tc | 14.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSS138NH6327XTSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bss138nh6327xtsa2-datasheets-6338.pdf | TO-236-3, SC-59, SOT-23-3 | 3.05mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 2A | e3 | Matte Tin (Sn) | 50V | Halogen Free | DUAL | GULL WING | 3 | 360mW | 1 | 2.3 ns | 3ns | 8.2 ns | 6.7 ns | 230mA | 20V | 60V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | 1V | 360mW Ta | 14.5 ns | N-Channel | 41pF @ 25V | 1 V | 3.5 Ω @ 230mA, 10V | 1.4V @ 26μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| DMG3406L-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg3406l13-datasheets-6232.pdf | TO-236-3, SC-59, SOT-23-3 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3.6A | 30V | 770mW Ta | N-Channel | 495pF @ 15V | 50m Ω @ 3.6A, 10V | 2V @ 250μA | 3.6A Ta | 11.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002W-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-2n7002w7f-datasheets-6561.pdf | 60V | 115mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Lead Free | 3 | 20 Weeks | 6.010099mg | No SVHC | 7.5Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 200mW | 1 | FET General Purpose Powers | 7 ns | 11 ns | 115mA | 20V | 60V | SILICON | SWITCHING | 2V | 200mW Ta | 5 pF | 70V | N-Channel | 50pF @ 25V | 2 V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDFS2P106A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdfs2p106a-datasheets-7402.pdf | -60V | -3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 7 Weeks | 230.4mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2W | 1 | Other Transistors | 8 ns | 11ns | 8.5 ns | 28 ns | -3A | 20V | SILICON | SWITCHING | 60V | 900mW Ta | 3A | -60V | P-Channel | 714pF @ 30V | 110m Ω @ 3A, 10V | 3V @ 250μA | 3A Ta | 21nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSC520N15NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-bsc520n15ns3gatma1-datasheets-7094.pdf | 8-PowerTDFN | 5.35mm | 1.1mm | 6.1mm | Lead Free | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 57W | 1 | Not Qualified | R-PDSO-F5 | 7 ns | 4ns | 3 ns | 10 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 3V | 57W Tc | 0.052Ohm | 60 mJ | 150V | N-Channel | 890pF @ 75V | 3 V | 52m Ω @ 18A, 10V | 4V @ 35μA | 21A Tc | 12nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RJK0651DPB-00#J5 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/renesaselectronicsamerica-rjk0651dpb00j5-datasheets-6949.pdf | SC-100, SOT-669 | Lead Free | 16 Weeks | 5 | yes | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 5 | 45W | 1 | 8.4 ns | 4.4ns | 6.8 ns | 42 ns | 25A | 20V | 60V | 45W Tc | N-Channel | 2030pF @ 10V | 14m Ω @ 12.5A, 10V | 25A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7470TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf7470trpbf-datasheets-7209.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 2.5W Ta | MS-012AA | 10A | 85A | 0.013Ohm | 300 mJ | N-Channel | 3430pF @ 20V | 13m Ω @ 10A, 10V | 2V @ 250μA | 10A Ta | 44nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH2R506PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 60V | 132W Tc | N-Channel | 5435pF @ 30V | 4.4m Ω @ 30A, 4.5V | 2.5V @ 500μA | 100A Tc | 60nC @ 10V | 4.5V 10V | ±20V |
