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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | Evaluation Kit | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| GA08JT17-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga08jt17247-datasheets-6677.pdf | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 91W | 28ns | 50 ns | 73 ns | 8A | 1700V | 48W Tc | 250m Ω @ 8A | 8A Tc 90°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-bss847f-datasheets-5428.pdf | -50V | -130mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 14 Weeks | 7.994566mg | No SVHC | 10Ohm | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | Tin | BSS84-7-F | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 300mW | 1 | Other Transistors | Not Qualified | 10 ns | 18 ns | 130mA | 20V | SILICON | SWITCHING | 50V | -800mV | 300mW Ta | P-Channel | 45pF @ 25V | 10 Ω @ 100mA, 5V | 2V @ 1mA | 130mA Ta | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STW12N150K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw12n150k5-datasheets-5436.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW12N | NOT SPECIFIED | 7A | 1500V | 250W Tc | N-Channel | 1360pF @ 100V | 1.9 Ω @ 3.5A, 10V | 5V @ 100μA | 7A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7E2R6-60E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e2r660e127-datasheets-5321.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | 36 ns | 50ns | 71 ns | 130 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 349W Tc | 995A | 0.0026Ohm | 660 mJ | N-Channel | 11180pF @ 25V | 2.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 158nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP052NE7N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipp052ne7n3gxksa1-datasheets-5325.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 150W | 1 | Not Qualified | 14 ns | 11ns | 8 ns | 30 ns | 80A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | TO-220AB | 0.0052Ohm | N-Channel | 4750pF @ 37.5V | 5.2m Ω @ 80A, 10V | 3.8V @ 91μA | 80A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF42S60L | Alpha & Omega Semiconductor Inc. | $11.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | Lead Free | 16 Weeks | 3 | 37.9W | 1 | FET General Purpose Power | 39A | 30V | Single | 600V | 37.9W Tc | N-Channel | 2154pF @ 100V | 99m Ω @ 21A, 10V | 3.8V @ 250μA | 39A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP7537PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfp7537pbf-datasheets-5339.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 230W | 15 ns | 105ns | 84 ns | 82 ns | 172A | 20V | 60V | 3.7V | 230W Tc | N-Channel | 7020pF @ 25V | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 172A Tc | 210nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP10NK60ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10nk60zfp-datasheets-5354.pdf | 600V | 10A | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 750mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP10 | 3 | Single | 35W | 1 | FET General Purpose Power | 20 ns | 20ns | 30 ns | 55 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 35W Tc | TO-220AB | 600V | N-Channel | 1370pF @ 25V | 750m Ω @ 4.5A, 10V | 4.5V @ 250μA | 10A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STW120NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb120nf10t4-datasheets-5136.pdf | 100V | 120A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 10.5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | STW120 | 3 | Single | 312W | 1 | FET General Purpose Power | 25 ns | 90ns | 68 ns | 132 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 4V | 312W Tc | 440A | 550 mJ | 100V | N-Channel | 5200pF @ 25V | 10.5m Ω @ 60A, 10V | 4V @ 250μA | 110A Tc | 233nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| EPC2020 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2020-datasheets-5367.pdf | Die | 12 Weeks | Die | 1.78nF | 90A | 60V | N-Channel | 1780pF @ 30V | 2.2mOhm @ 31A, 5V | 2.5V @ 16mA | 90A Ta | 16nC @ 5V | 2.2 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C2M0160120D | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2013 | TO-247-3 | 16.13mm | 25.5mm | 5.21mm | 16 Weeks | Unknown | 3 | No | Yes | 1 | Single | 125W | 1 | 150°C | TO-247-3 | 527pF | 9 ns | 12ns | 7 ns | 16 ns | 19A | 20V | 1200V | 2.5V | 125W Tc | 160mOhm | 1.2kV | N-Channel | 527pF @ 800V | 196mOhm @ 10A, 20V | 2.5V @ 500μA | 19A Tc | 32.6nC @ 20V | 196 mΩ | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP27N60KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irfp27n60kpbf-datasheets-5402.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 220MOhm | 3 | Tin | No | 1 | Single | 500W | 1 | TO-247-3 | 4.66nF | 27 ns | 110ns | 38 ns | 43 ns | 27A | 30V | 600V | 5V | 500W Tc | 220mOhm | N-Channel | 4660pF @ 25V | 5 V | 220mOhm @ 16A, 10V | 5V @ 250μA | 27A Tc | 180nC @ 10V | 220 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STY105NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sty105nm50n-datasheets-5407.pdf | TO-247-3 | Lead Free | 12 Weeks | 22MOhm | 247 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STY105 | Single | 625W | 1 | 47 ns | 88ns | 70 ns | 353 ns | 110A | 25V | 500V | 625W Tc | 600V | N-Channel | 9600pF @ 100V | 22m Ω @ 52A, 10V | 4V @ 250μA | 110A Tc | 326nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP4N150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw4n150-datasheets-2498.pdf | 1.5kV | 4A | TO-220-3 | 10.4mm | 19.68mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 7Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP4N | 3 | 1 | Single | 160W | 1 | FET General Purpose Power | 150°C | 35 ns | 30ns | 45 ns | 45 ns | 4A | 30V | SILICON | ISOLATED | SWITCHING | 1500V | 4V | 160W Tc | TO-220AB | 4A | 1.5kV | N-Channel | 1300pF @ 25V | 7 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| 2N7002-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-2n70027f-datasheets-5418.pdf | 60V | 115mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 16 Weeks | 7.994566mg | No SVHC | 7.5Ohm | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | Tin | No | 115A | e3 | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 300mW | 1 | FET General Purpose Power | 7 ns | 3ns | 5.6 ns | 11 ns | 115mA | 20V | 60V | SILICON | SWITCHING | 2.5V | 370mW Ta | 5 pF | 70V | N-Channel | 50pF @ 25V | 2.5 V | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STP26NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf26nm60n-datasheets-1742.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 165MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP26N | 3 | Single | 140W | 1 | FET General Purpose Power | 13 ns | 25ns | 50 ns | 85 ns | 10A | 25V | 600V | SILICON | SWITCHING | 140W Tc | TO-220AB | 20A | 80A | 600V | N-Channel | 1800pF @ 50V | 3 V | 165m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R6-100PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn5r6100ps127-datasheets-5290.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | 3 | 12 Weeks | 4.535924g | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 306W | 1 | 31 ns | 46ns | 34 ns | 83 ns | 100A | 20V | 100V | SILICON | DRAIN | SWITCHING | 306W Tc | TO-220AB | 0.0056Ohm | 468 mJ | 100V | N-Channel | 8061pF @ 50V | 5.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 141nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP32N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fqp32n20c-datasheets-5296.pdf&product=onsemiconductor-fqp32n20c-6384028 | 200V | 28A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 156W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 270ns | 210 ns | 245 ns | 28A | 30V | SILICON | SWITCHING | 156W Tc | TO-220AB | 0.082Ohm | 955 mJ | 200V | N-Channel | 2200pF @ 25V | 82m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLI2910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irli2910pbf-datasheets-5306.pdf | 100V | 27A | TO-220-3 Full Pack | 10.6172mm | 9.8044mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 30mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | Single | 63W | 1 | FET General Purpose Power | 2.5kV | 11 ns | 100ns | 55 ns | 11 ns | 31A | 16V | 100V | SILICON | ISOLATED | SWITCHING | 2V | 63W Tc | TO-220AB | 520 mJ | 100V | N-Channel | 3700pF @ 25V | 2 V | 26m Ω @ 16A, 10V | 2V @ 250μA | 31A Tc | 140nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFS4127TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4127trlpbf-datasheets-5121.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | Lead Free | 2 | 12 Weeks | 22MOhm | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 17 ns | 18ns | 22 ns | 56 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 250 mJ | 200V | N-Channel | 5380pF @ 50V | 22m Ω @ 44A, 10V | 5V @ 250μA | 72A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI7178DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7178dpt1ge3-datasheets-5111.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 10ns | 11 ns | 27 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 6.25W Ta 104W Tc | 100V | N-Channel | 2870pF @ 50V | 4.5 V | 14m Ω @ 10A, 10V | 4.5V @ 250μA | 60A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STL24N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl24n60m2-datasheets-5166.pdf | 8-PowerVDFN | Lead Free | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | No | STL24 | 1 | Single | 14 ns | 9ns | 15 ns | 60 ns | 18A | 25V | 600V | 125W Tc | N-Channel | 1060pF @ 100V | 210m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPHR6503PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | 175°C | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 1mm | 12 Weeks | 8 | 1 | 960mW | 175°C | 8-SOP Advance (5x5) | 10nF | 36 ns | 100 ns | 150A | 20V | 30V | 1.1V | 960mW Ta 170W Tc | 410μOhm | 30V | N-Channel | 10000pF @ 15V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 150A Tc | 110nC @ 10V | 650 μΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB120NF10T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb120nf10t4-datasheets-5136.pdf | 100V | 120A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | 13.607771g | No SVHC | 10.5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | GULL WING | 245 | STB120N | 4 | Single | 30 | 312W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 90ns | 68 ns | 132 ns | 110A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 312W Tc | 480A | 550 mJ | 100V | N-Channel | 5200pF @ 25V | 4 V | 10.5m Ω @ 60A, 10V | 4V @ 250μA | 110A Tc | 233nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STB140NF55T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb140nf55t4-datasheets-5190.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 6.5mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB140N | 4 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 150ns | 45 ns | 125 ns | 80A | 20V | 55V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | 55V | N-Channel | 5300pF @ 25V | 3 V | 8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 142nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| CSD18540Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18540q5bt-datasheets-6549.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | 24.012046mg | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD18540 | 1 | Single | NOT SPECIFIED | 3.8W | 1 | 175°C | 6 ns | 9ns | 3 ns | 20 ns | 29A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.9V | 3.1W Ta 195W Tc | 400A | 0.0033Ohm | 320 mJ | N-Channel | 4230pF @ 30V | 2.2m Ω @ 28A, 10V | 2.3V @ 250μA | 100A Ta | 53nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7850DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7850dpt1ge3-datasheets-4691.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | S17-0173_SINGLE | e3 | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | 150°C | R-PDSO-F5 | 10 ns | 10ns | 10 ns | 25 ns | 6.2A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.8W Ta | 40A | 60V | N-Channel | 74ns | 40ns | 22m Ω @ 10.3A, 10V | 3V @ 250μA | 6.2A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STB20N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb20n95k5-datasheets-5261.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | 330MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 245 | STB20N | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 12ns | 20 ns | 70 ns | 17.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 70A | 200 mJ | 950V | N-Channel | 1500pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 17.5A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSC010N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-bsc010n04lsatma1-datasheets-4938.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 3 | 39 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | 150°C | R-PDSO-F3 | 10 ns | 12ns | 9 ns | 46 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.2V | 2.5W Ta 139W Tc | 400A | 330 mJ | 40V | N-Channel | 6800pF @ 20V | 1m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 100A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4434DY-T1-E3 | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4434dyt1e3-datasheets-5004.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 155mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | 16 ns | 23ns | 19 ns | 47 ns | 3A | 20V | SILICON | SWITCHING | 1.56W Ta | 250V | N-Channel | 155m Ω @ 3A, 10V | 4V @ 250μA | 2.1A Ta | 50nC @ 10V | 6V 10V | ±20V |
