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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STN3NF06L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stn3nf06l-datasheets-4196.pdf | 60V | 4A | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 12 Weeks | 4.535924g | No SVHC | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | STN3N | 4 | Single | 3.3W | 1 | FET General Purpose Power | 9 ns | 25ns | 10 ns | 20 ns | 4A | 16V | SILICON | DRAIN | SWITCHING | 2.8V | 3.3W Tc | 4A | 60V | N-Channel | 340pF @ 25V | 100m Ω @ 1.5A, 10V | 2.8V @ 250μA | 4A Tc | 9nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| AOD4189 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.6mm | 2 | 18 Weeks | 3 | No | SINGLE | GULL WING | 1 | 2.5W | 1 | 175°C | R-PSSO-G2 | 10 ns | 38 ns | -40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | -1.7V | 2.5W Ta 62.5W Tc | 50A | 0.022Ohm | -40V | P-Channel | 1870pF @ 20V | 22m Ω @ 12A, 10V | 3V @ 250μA | 40A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN352AP | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdn352ap-datasheets-3911.pdf | -30V | -1.3A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.22mm | 1.4mm | Lead Free | 3 | 10 Weeks | No SVHC | 180MOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | 13A | e3 | 30V | DUAL | GULL WING | 1 | Single | 500mW | 1 | Other Transistors | 150°C | 4 ns | 15ns | 15 ns | 10 ns | -1.3A | 25V | -30V | SILICON | SWITCHING | -2V | 500mW Ta | -30V | P-Channel | 150pF @ 15V | -2 V | 180m Ω @ 1.3A, 10V | 2.5V @ 250μA | 1.3A Ta | 1.9nC @ 4.5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| DMP2100U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp2100u7-datasheets-3770.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 5 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 1.3W | 1 | Other Transistors | 80 ns | 155ns | 423 ns | 688 ns | 4.3A | 10V | SILICON | SWITCHING | 20V | -1.4V | 800mW Ta | -20V | P-Channel | 216pF @ 15V | 38m Ω @ 3.5A, 10V | 1.4V @ 250μA | 4.3A Ta | 9.1nC @ 4.5V | 1.8V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| AOD407 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.388mm | 2 | 18 Weeks | 3 | yes | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 2.5W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 50W Tc | P-Channel | 1185pF @ 30V | 115m Ω @ 12A, 10V | 3V @ 250μA | 12A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A13FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmp6a13fta-datasheets-3978.pdf | -60V | -1.1A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 600mOhm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 625mW | 1 | Other Transistors | 1.6 ns | 2.2ns | 5.7 ns | 11.2 ns | 1.1A | 20V | SILICON | SWITCHING | 60V | -3V | 625mW Ta | 0.9A | P-Channel | 219pF @ 30V | 400m Ω @ 900mA, 10V | 3V @ 250μA | 900mA Ta | 5.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RSR030N06TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohm-rsr030n06tl-datasheets-6252.pdf | SC-96 | 3mm | 950μm | 1.8mm | Lead Free | 3 | 20 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 8 ns | 12ns | 10 ns | 30 ns | 3A | 20V | SILICON | SWITCHING | 540mW Ta | 3A | 0.105Ohm | 60V | N-Channel | 380pF @ 10V | 85m Ω @ 3A, 10V | 2.5V @ 1mA | 3A Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN6040SFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn6040sfde7-datasheets-4024.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | 17 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | 1 | 40 | 2.03W | 1 | S-PDSO-N3 | 6.6 ns | 8.1ns | 4 ns | 20.1 ns | 5.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 660mW Ta | 0.038Ohm | 60V | N-Channel | 1287pF @ 25V | 38m Ω @ 4.3A, 10V | 3V @ 250μA | 5.3A Ta | 22.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMA410NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdma410nz-datasheets-4046.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 23MOhm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.4W | 1 | FET General Purpose Power | 7.5 ns | 3.9ns | 3.7 ns | 27 ns | 9.5A | 8V | SILICON | DRAIN | 2.4W Ta | 20V | N-Channel | 1080pF @ 10V | 700 mV | 23m Ω @ 9.5A, 4.5V | 1V @ 250μA | 9.5A Ta | 14nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| ZXMP10A13FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp10a13fta-datasheets-4041.pdf | -100V | -500mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 1Ohm | 3 | yes | EAR99 | No | ZXMP10A13FTA | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 625mW | 1 | Other Transistors | 1.6 ns | 2.1ns | 3.3 ns | 5.9 ns | -700mA | 20V | SILICON | SWITCHING | 100V | -4V | 625mW Ta | 0.7A | -100V | P-Channel | 141pF @ 50V | 1 Ω @ 600mA, 10V | 4V @ 250μA | 600mA Ta | 3.5nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRLML6344TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlml6344trpbf-datasheets-3936.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 37MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.3W | 1 | FET General Purpose Power | 150°C | 4.2 ns | 5.6ns | 9.1 ns | 22 ns | 5A | 12V | SILICON | SWITCHING | 800mV | 1.3W Ta | 15 ns | 5A | 30V | N-Channel | 650pF @ 25V | 800 mV | 29m Ω @ 5A, 4.5V | 1.1V @ 10μA | 5A Ta | 6.8nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| FDN340P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdn340p-datasheets-3844.pdf | -20V | -2A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 940μm | 3.05mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | SuperSOT3 | e3 | DUAL | GULL WING | Single | 500mW | 1 | Other Transistors | 10 ns | 9ns | 11 ns | 27 ns | 2A | 8V | -20V | SILICON | SWITCHING | 20V | -800mV | 500mW Ta | 2A | -20V | P-Channel | 779pF @ 10V | -800 mV | 70m Ω @ 2A, 4.5V | 1.5V @ 250μA | 2A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| BUK9880-55A/CUX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk988055acux-datasheets-3856.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 16 Weeks | 4 | Tin | YES | DUAL | GULL WING | 4 | 1 | 8 ns | 118ns | 32 ns | 20 ns | 7A | 15V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8W Tc | 7A | 30A | 0.089Ohm | 36 mJ | N-Channel | 584pF @ 25V | 73m Ω @ 8A, 10V | 2V @ 1mA | 7A Tc | 11nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGSF1N03LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-mgsf1n03lt1g-datasheets-3861.pdf | 30V | 750mA | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 24 Weeks | No SVHC | 80MOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | Single | 730mW | 1 | FET General Purpose Power | 2.5 ns | 1ns | 1 ns | 16 ns | 2.1A | 20V | SILICON | SWITCHING | 1.7V | 420mW Ta | 30V | N-Channel | 140pF @ 5V | 1.7 V | 100m Ω @ 1.2A, 10V | 2.4V @ 250μA | 1.6A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDV301N | ON Semiconductor | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fdv301n-datasheets-3721.pdf | 25V | 220mA | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.11mm | 3.05mm | Lead Free | 3 | 10 Weeks | No SVHC | 4Ohm | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 2A | SOT−23 (TO−236) CASE 318−08 ISSUE AR | e3 | 50V | DUAL | GULL WING | 260 | 1 | Single | 30 | 350mW | 1 | FET General Purpose Power | 150°C | 3.2 ns | 6ns | 6 ns | 3.5 ns | 220mA | 8V | 25V | SILICON | SWITCHING | 350mW Ta | 25V | N-Channel | 9.5pF @ 10V | 850 mV | 4 Ω @ 400mA, 4.5V | 1.06V @ 250μA | 220mA Ta | 0.7nC @ 4.5V | 2.7V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| ZVN0545A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn0545a-datasheets-3730.pdf | 450V | 90mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | 3 | 17 Weeks | 453.59237mg | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Power | 7 ns | 7ns | 7 ns | 16 ns | 90mA | 20V | SILICON | 3V | 700mW Ta | 0.09A | 4 pF | 450V | N-Channel | 70pF @ 25V | 50 Ω @ 100mA, 10V | 3V @ 1mA | 90mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSS138P,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-bss138p215-datasheets-3688.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 3 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | 1 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 350mW Ta 1.14W Tc | N-Channel | 50pF @ 10V | 1.6 Ω @ 300mA, 10V | 1.5V @ 250μA | 360mA Ta | 0.8nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-2n7002lt3g-datasheets-2359.pdf&product=onsemiconductor-2n7002lt1g-6383748 | 60V | 115mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.11mm | 1.4mm | Lead Free | 3 | 10 Weeks | No SVHC | 7.5Ohm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | GULL WING | 3 | 1 | Single | 225mW | 1 | FET General Purpose Power | 150°C | 20 ns | 40 ns | 115mA | 20V | SILICON | SWITCHING | 1V | 225mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.5 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB009N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb009n03lgatma1-datasheets-3076.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 39 Weeks | 7 | no | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 250W | 1 | Not Qualified | R-PSSO-G6 | 26 ns | 14ns | 22 ns | 103 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 250W Tc | TO-263AA | N-Channel | 25000pF @ 15V | 0.95m Ω @ 100A, 10V | 2.2V @ 250μA | 180A Tc | 227nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSS138K | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-bss138k-datasheets-3782.pdf | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 930μm | 1.3mm | Lead Free | 8 Weeks | 30mg | No SVHC | 1.6Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | Tin | BSS138 | Single | 350mW | 1 | SOT-23-3 | 58pF | 5 ns | 5ns | 35 ns | 60 ns | 220mA | 12V | 50V | 600mV | 350mW Ta | 1.6Ohm | 50V | N-Channel | 58pF @ 25V | 600 mV | 1.6Ohm @ 50mA, 5V | 1.2V @ 250μA | 220mA Ta | 2.4nC @ 10V | 1.6 Ω | 1.8V 2.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN65D8L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmn65d8l7-datasheets-3694.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 14 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 540mW | 1 | 2.7 ns | 2.8ns | 12.6 ns | 310mA | 20V | SILICON | SWITCHING | 2V | 370mW Ta | 0.27A | 4Ohm | 60V | N-Channel | 22pF @ 25V | 3 Ω @ 115mA, 10V | 2V @ 250μA | 310mA Ta | 0.87nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| 2N7002T-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-2n7002t7f-datasheets-3823.pdf | 60V | 115mA | SOT-523 | 1.6mm | 750μm | 800μm | Lead Free | 3 | 15 Weeks | 2.012816mg | No SVHC | 7.5Ohm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 150mW | 1 | FET General Purpose Power | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 2V | 150mW Ta | 60V | 5 pF | 60V | N-Channel | 50pF @ 25V | 2 V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 115mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRL3713STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irl3713strlpbf-datasheets-3021.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 3MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 160ns | 57 ns | 40 ns | 260A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 330W Tc | 75A | 30V | N-Channel | 5890pF @ 15V | 2.5 V | 3m Ω @ 38A, 10V | 2.5V @ 250μA | 260A Tc | 110nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB120P04P4L03ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb120p04p4l03atma1-datasheets-2194.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 136W | 1 | 175°C | R-PSSO-G2 | 21 ns | 16ns | 57 ns | 85 ns | -120A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | -1.7V | 136W Tc | 480A | 0.0052Ohm | 78 mJ | -40V | P-Channel | 15000pF @ 25V | 3.1m Ω @ 100A, 10V | 2.2V @ 340μA | 120A Tc | 234nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| DMG2302UK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmg2302uk7-datasheets-3711.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 18 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 660mW | 150°C | 600 ps | 4.2 ns | 2.8A | 12V | 660mW Ta | 20V | N-Channel | 130pF @ 10V | 90m Ω @ 3.6A, 4.5V | 1V @ 250μA | 2.8A Ta | 2.8nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P06-07L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sum110p0607le3-datasheets-3353.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.946308g | No SVHC | 6.9MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 160ns | 240 ns | 110 ns | -11A | 20V | SILICON | SWITCHING | 60V | -3V | 3.75W Ta 375W Tc | 240A | -60V | P-Channel | 11400pF @ 25V | -3 V | 6.9m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 345nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFS4310ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfs4310ztrlpbf-datasheets-2802.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20 ns | 60ns | 57 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 560A | 0.006Ohm | 100V | N-Channel | 6860pF @ 50V | 4 V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP5NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp5nk80z-datasheets-3437.pdf | 800V | 4.3A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 2.4Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP5N | 3 | Single | 110W | 1 | FET General Purpose Power | 18 ns | 25ns | 30 ns | 45 ns | 4.3A | 30V | SILICON | SWITCHING | 3.75V | 110W Tc | TO-220AB | 800V | N-Channel | 910pF @ 25V | 2.4 Ω @ 2.15A, 10V | 4.5V @ 100μA | 4.3A Tc | 45.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| CSD19502Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19502q5b-datasheets-1484.pdf | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD19502 | Single | NOT SPECIFIED | 1 | 100A | SILICON | DRAIN | SWITCHING | 80V | 2.7V | 3.1W Ta 195W Tc | 17A | 400A | 22 pF | 274 mJ | N-Channel | 4870pF @ 40V | 4.1m Ω @ 19A, 10V | 3.3V @ 250μA | 100A Ta | 62nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SPB80P06PGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-spb80p06pgatma1-datasheets-3130.pdf | -60V | -80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.4mm | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 340W | 1 | Not Qualified | 175°C | R-PSSO-G2 | 24 ns | 18ns | 30 ns | 56 ns | -80A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | -3V | 340W Tc | -60V | P-Channel | 5033pF @ 25V | 23m Ω @ 64A, 10V | 4V @ 5.5mA | 80A Tc | 173nC @ 10V | 10V | ±20V |
