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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVMFS5C604NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c604nlwfaft1g-datasheets-2820.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | ACTIVE (Last Updated: 14 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 200W Tc | N-Channel | 8900pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 287A Tc | 52nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB270N4F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb270n4f3-datasheets-2564.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 2MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB270N | 4 | Single | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 180ns | 45 ns | 110 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 330W Tc | 640A | 40V | N-Channel | 7400pF @ 25V | 2.5m Ω @ 80A, 10V | 4V @ 250μA | 160A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD16570Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 24.012046mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | AVALANCHE RATED | Gold | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD16570 | 1 | Single | NOT SPECIFIED | 1 | 5 ns | 43ns | 72 ns | 156 ns | 100A | 20V | SILICON | DRAIN | 1.5V | 3.2W Ta 195W Tc | 59A | 400A | 25V | N-Channel | 14000pF @ 12V | 0.59m Ω @ 50A, 10V | 1.9V @ 250μA | 100A Ta | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| EPC2053 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2053-datasheets-2549.pdf | Die | 10 Weeks | Die | 100V | N-Channel | 1895pF @ 50V | 3.8mOhm @ 25A, 5V | 2.5V @ 9mA | 48A | 14.8nC @ 5V | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180P04P4L02ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb180p04p4l02atma1-datasheets-2610.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 32 ns | 28ns | 119 ns | 146 ns | 180A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 150W Tc | 0.0039Ohm | 84 mJ | P-Channel | 18700pF @ 25V | 2.4m Ω @ 100A, 10V | 2.2V @ 410μA | 180A Tc | 286nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU4615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfu4615pbf-datasheets-2653.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.39mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | 150V | SILICON | DRAIN | SWITCHING | 5V | 144W Tc | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 5 V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSB056N10NN3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsb056n10nn3gxuma1-datasheets-2396.pdf | 3-WDSON | Lead Free | 3 | 26 Weeks | No SVHC | 3 | yes | EAR99 | Silver | No | e4 | Halogen Free | BOTTOM | 3 | 2.8W | 1 | 9ns | 9A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.7V | 2.8W Ta 78W Tc | 9A | 0.0056Ohm | 450 mJ | N-Channel | 5500pF @ 50V | 5.6m Ω @ 30A, 10V | 3.5V @ 100μA | 9A Ta 83A Tc | 74nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQP30N06L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp30n06l-datasheets-2670.pdf | 60V | 32A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 35mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 79W | 1 | FET General Purpose Power | 15 ns | 210ns | 110 ns | 60 ns | 32A | 20V | SILICON | SWITCHING | 2.5V | 79W Tc | TO-220AB | 60V | N-Channel | 1040pF @ 25V | 2.5 V | 35m Ω @ 16A, 10V | 2.5V @ 250μA | 32A Tc | 20nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PSMN3R3-80BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn3r380bs118-datasheets-1799.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3.5MOhm | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 38 ns | 29ns | 33 ns | 94 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 306W Tc | 760A | 676 mJ | 80V | N-Channel | 8161pF @ 40V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 111nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STF20NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf20nf20-datasheets-2709.pdf | 200V | 18A | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STF20 | 3 | Single | 30W | 1 | FET General Purpose Power | 15 ns | 30ns | 10 ns | 40 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 72A | 200V | N-Channel | 940pF @ 25V | 125m Ω @ 10A, 10V | 4V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPB019N06L3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb019n06l3gatma1-datasheets-2438.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.57mm | Contains Lead | 2 | 13 Weeks | No SVHC | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | PG-TO-263-3 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 175°C | R-PSSO-G2 | 35 ns | 79ns | 38 ns | 131 ns | 120A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 250W Tc | 480A | 60V | N-Channel | 28000pF @ 30V | 1.9m Ω @ 100A, 10V | 2.2V @ 196μA | 120A Tc | 166nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FQP27P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-lm7918ct-datasheets-7491.pdf | -60V | -27A | TO-220-3 | 6.35mm | 6.35mm | 9.9mm | Lead Free | 3 | 6 Weeks | 1.8g | No SVHC | 70mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 120W | 1 | Other Transistors | 18 ns | 185ns | 90 ns | 30 ns | -27A | 25V | -60V | SILICON | SWITCHING | 60V | -4V | 120W Tc | TO-220AB | 560 mJ | -60V | P-Channel | 1400pF @ 25V | -4 V | 70m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 43nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| ZVN4306AV | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zvn4306av-datasheets-2433.pdf | 60V | 1.1A | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 1.13W | 1 | 8 ns | 25ns | 25 ns | 30 ns | 1.1A | 20V | SILICON | SWITCHING | 850mW Ta | 60V | N-Channel | 350pF @ 25V | 330m Ω @ 3A, 10V | 3V @ 1mA | 1.1A Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BUK765R0-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk765r0100e118-datasheets-2480.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | D2PAK | 100V | 357W Tc | N-Channel | 11810pF @ 25V | 5mOhm @ 25A, 10V | 4V @ 1mA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB5800 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdb5800-datasheets-2346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 6MOhm | 3 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 242W | 1 | FET General Purpose Power | R-PSSO-G2 | 20.3 ns | 22ns | 12.1 ns | 27.1 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1V | 242W Tc | 652 mJ | 60V | N-Channel | 6625pF @ 15V | 6m Ω @ 80A, 10V | 2.5V @ 250μA | 14A Ta 80A Tc | 135nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPL60R185P7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r185p7auma1-datasheets-2341.pdf | 4-PowerTSFN | 18 Weeks | PG-VSON-4 | 650V | 81W Tc | 149mOhm | N-Channel | 1081pF @ 400V | 185mOhm @ 5.6A, 10V | 4V @ 280μA | 19A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020KNJTL | ROHM Semiconductor | $2.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 231W Tc | 20A | 60A | 0.196Ohm | 418 mJ | N-Channel | 1550pF @ 25V | 196m Ω @ 9.5A, 10V | 5V @ 1mA | 20A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB44N25TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdb44n25tm-datasheets-2288.pdf | 250V | 44A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 4 Weeks | 1.31247g | No SVHC | 69mOhm | 2 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | GULL WING | 1 | Single | 307W | 1 | FET General Purpose Power | 150°C | 55 ns | 400ns | 115 ns | 85 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 5V | 307W Tc | 250V | N-Channel | 2870pF @ 25V | 5 V | 69m Ω @ 22A, 10V | 5V @ 250μA | 44A Tc | 61nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| EPC8002 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc8002-datasheets-2299.pdf | Die | 12 Weeks | Die | 21pF | 2A | 65V | N-Channel | 21pF @ 32.5V | 530mOhm @ 500mA, 5V | 2.5V @ 250μA | 2A Ta | 530 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-bsc014n06nsatma1-datasheets-1940.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 3 | 13 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 156W | 1 | 150°C | R-PDSO-F3 | 23 ns | 10ns | 11 ns | 43 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 2.5W Ta 156W Tc | 30A | 400A | 60V | N-Channel | 6500pF @ 30V | 1.45m Ω @ 50A, 10V | 2.8V @ 120μA | 30A Ta 100A Tc | 89nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRL540NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl540npbf-datasheets-2323.pdf | 100V | 36A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 53mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 140W | 1 | FET General Purpose Power | 11 ns | 81ns | 62 ns | 39 ns | 36A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | TO-220AB | 290 ns | 100V | N-Channel | 1800pF @ 25V | 2 V | 44m Ω @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| EPC8009 | EPC | $869.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc8009-datasheets-2332.pdf | Die | 12 Weeks | Die | 52pF | 2.7A | 65V | N-Channel | 52pF @ 32.5V | 130mOhm @ 500mA, 5V | 2.5V @ 250μA | 2.7A Ta | 0.45nC @ 5V | 130 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6218STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf6218strlpbf-datasheets-2352.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 2 | 14 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 250W | 1 | Other Transistors | R-PSSO-G2 | 21 ns | 70ns | 30 ns | 35 ns | -150A | 20V | SILICON | DRAIN | SWITCHING | 150V | -5V | 250W Tc | 27A | -150V | P-Channel | 2210pF @ 25V | -5 V | 150m Ω @ 16A, 10V | 5V @ 250μA | 27A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDMS86150 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86150-datasheets-2378.pdf&product=onsemiconductor-fdms86150-6383508 | 8-PowerTDFN | 5.1mm | 1.05mm | 6.25mm | Lead Free | 5 | 13 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | TIN | DUAL | 260 | Single | 30 | 156W | 1 | FET General Purpose Power | R-PDSO-N5 | 18 ns | 8.3ns | 6 ns | 28 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.7W Ta 156W Tc | MO-240AA | 300A | 726 mJ | 100V | N-Channel | 4065pF @ 50V | 4.85m Ω @ 16A, 10V | 4V @ 250μA | 16A Ta 60A Tc | 62nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD40N10-25-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sud40n1025e3-datasheets-2374.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 25mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 4 | Single | 30 | 3W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 40ns | 80 ns | 15 ns | 40A | 20V | SILICON | DRAIN | 3V | 3W Ta 136W Tc | TO-252AA | 70A | 80 mJ | 100V | N-Channel | 2400pF @ 25V | 3 V | 25m Ω @ 40A, 10V | 3V @ 250μA | 40A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMS86202 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86202-datasheets-2425.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.25mm | 12 Weeks | 56.5mg | 8 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | 1 | Single | FET General Purpose Power | 21 ns | 6ns | 5 ns | 27 ns | 13.5A | 20V | 2.7W Ta 156W Tc | 40A | 120V | N-Channel | 4250pF @ 60V | 7.2m Ω @ 13.5A, 10V | 4V @ 250μA | 13.5A Ta | 64nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC8004 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc8004-datasheets-2202.pdf | Die | 12 Weeks | Die | 52pF | 2.7A | 40V | N-Channel | 52pF @ 20V | 110mOhm @ 500mA, 5V | 2.5V @ 250μA | 2.7A Ta | 0.45nC @ 5V | 110 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP7NK40Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp7nk40z-datasheets-2214.pdf | 400V | 5.4A | TO-220-3 | Lead Free | 3 | 12 Weeks | No SVHC | 1Ohm | 3 | 2.54mm | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP7N | 3 | Single | 70W | 1 | FET General Purpose Power | 15 ns | 15ns | 12 ns | 30 ns | 5.4A | 30V | 400V | SILICON | SWITCHING | 3.75V | 70W Tc | TO-220AB | 220 ns | 400V | N-Channel | 535pF @ 25V | 1 Ω @ 2.7A, 10V | 4.5V @ 50μA | 5.4A Tc | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| BSC026N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc026n08ns5atma1-datasheets-1999.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 156W | 1 | 150°C | R-PDSO-F5 | 18 ns | 14ns | 16 ns | 47 ns | 100A | 20V | 80V | SILICON | DRAIN | SWITCHING | 3V | 2.5W Ta 156W Tc | 23A | 400A | 0.0026Ohm | 370 mJ | 80V | N-Channel | 6800pF @ 40V | 2.6m Ω @ 50A, 10V | 3.8V @ 115μA | 23A Ta 100A Tc | 92nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSC014N06NSTATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-bsc014n06nstatma1-datasheets-2034.pdf | 8-PowerTDFN | 1.1mm | 13 Weeks | 1 | 3W | 175°C | 23 ns | 43 ns | 31A | 20V | 3W Ta 188W Tc | 60V | N-Channel | 8125pF @ 30V | 1.45m Ω @ 50A, 10V | 3.3V @ 120μA | 100A Tc | 104nC @ 10V | 6V 10V | ±20V |
