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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP7NK40Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp7nk40z-datasheets-2214.pdf | 400V | 5.4A | TO-220-3 | Lead Free | 3 | 12 Weeks | No SVHC | 1Ohm | 3 | 2.54mm | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP7N | 3 | Single | 70W | 1 | FET General Purpose Power | 15 ns | 15ns | 12 ns | 30 ns | 5.4A | 30V | 400V | SILICON | SWITCHING | 3.75V | 70W Tc | TO-220AB | 220 ns | 400V | N-Channel | 535pF @ 25V | 1 Ω @ 2.7A, 10V | 4.5V @ 50μA | 5.4A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC026N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc026n08ns5atma1-datasheets-1999.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 156W | 1 | 150°C | R-PDSO-F5 | 18 ns | 14ns | 16 ns | 47 ns | 100A | 20V | 80V | SILICON | DRAIN | SWITCHING | 3V | 2.5W Ta 156W Tc | 23A | 400A | 0.0026Ohm | 370 mJ | 80V | N-Channel | 6800pF @ 40V | 2.6m Ω @ 50A, 10V | 3.8V @ 115μA | 23A Ta 100A Tc | 92nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC014N06NSTATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-bsc014n06nstatma1-datasheets-2034.pdf | 8-PowerTDFN | 1.1mm | 13 Weeks | 1 | 3W | 175°C | 23 ns | 43 ns | 31A | 20V | 3W Ta 188W Tc | 60V | N-Channel | 8125pF @ 30V | 1.45m Ω @ 50A, 10V | 3.3V @ 120μA | 100A Tc | 104nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1407STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1407strlpbf-datasheets-2142.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 7.8mOhm | 3 | EAR99 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 150ns | 140 ns | 150 ns | 100A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.8W Ta 200W Tc | 75A | 520A | 75V | N-Channel | 5600pF @ 25V | 4 V | 7.8m Ω @ 78A, 10V | 4V @ 250μA | 100A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB039N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb039n10n3gatma1-datasheets-2242.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Contains Lead | 6 | 13 Weeks | 7 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 214W | 1 | Not Qualified | R-PSSO-G6 | 27 ns | 59ns | 14 ns | 48 ns | 160A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 214W Tc | TO-263AA | 640A | 0.0039Ohm | 340 mJ | N-Channel | 8410pF @ 50V | 3.9m Ω @ 100A, 10V | 3.5V @ 160μA | 160A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TSM80N950CP ROG | Taiwan Semiconductor Corporation | $24.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm80n950cprog-datasheets-2191.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30 Weeks | TO-252, (D-Pak) | 800V | 110W Tc | N-Channel | 691pF @ 100V | 950mOhm @ 3A, 10V | 4V @ 250μA | 6A Tc | 19.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3205PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | 55V | 110A | TO-220-3 | 10.54mm | 19.8mm | 4.69mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 8mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | 1 | Single | 150W | 1 | FET General Purpose Power | 175°C | 14 ns | 101ns | 65 ns | 50 ns | 110A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-220AB | 104 ns | 75A | 264 mJ | 55V | N-Channel | 3247pF @ 25V | 4 V | 8m Ω @ 62A, 10V | 4V @ 250μA | 110A Tc | 146nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD19532Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD19532 | 1 | Single | NOT SPECIFIED | 3.1W | 1 | FET General Purpose Power | 150°C | 7 ns | 6ns | 6 ns | 22 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.6V | 3.1W Ta 195W Tc | 400A | 0.0057Ohm | 274 mJ | 100V | N-Channel | 4810pF @ 50V | 4.9m Ω @ 17A, 10V | 3.2V @ 250μA | 100A Ta | 62nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQJ469EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqj469ept1ge3-datasheets-2127.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 506.605978mg | Unknown | 8 | No | 1 | Single | 100W | 1 | 175°C | PowerPAK® SO-8 | 5.1nF | 16 ns | 16ns | 40 ns | 150 ns | -32A | 20V | 80V | -2V | 100W Tc | 45mOhm | -80V | P-Channel | 5100pF @ 40V | -2 V | 25mOhm @ 10.2A, 10V | 2.5V @ 250μA | 32A Tc | 155nC @ 10V | 25 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6290 | Alpha & Omega Semiconductor Inc. | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | Lead Free | 18 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 208W | 1 | FET General Purpose Powers | 85A | 20V | Single | 100V | 7.3W Ta 208W Tc | N-Channel | 4600pF @ 50V | 4.6m Ω @ 20A, 10V | 3.4V @ 250μA | 28A Ta 85A Tc | 90nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5117PLT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvd5117plt4gvf01-datasheets-1804.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 7 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 4.1W Ta 118W Tc | 11A | 419A | 0.022Ohm | 240 mJ | P-Channel | 4800pF @ 25V | 16m Ω @ 29A, 10V | 2.5V @ 250μA | 11A Ta 61A Tc | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC600N25NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc600n25ns3gatma1-datasheets-1926.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | 8 | 125W | 1 | Not Qualified | R-PDSO-F5 | 10ns | 25A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 125W Tc | 0.06Ohm | N-Channel | 2350pF @ 100V | 60m Ω @ 25A, 10V | 4V @ 90μA | 25A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STP60NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp60nf06-datasheets-1949.pdf | 60V | 60A | TO-220-3 | 10.4mm | 19.68mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 16mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | TO-220-POA | e3 | Matte Tin (Sn) | STP60N | 3 | 1 | Single | 110W | 1 | FET General Purpose Power | 175°C | 15 ns | 108ns | 20 ns | 45 ns | 60A | 20V | 60V | SILICON | SWITCHING | 4V | 110W Tc | TO-220AB | 240A | 60V | N-Channel | 1660pF @ 25V | 16m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPW1R306PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 16 Weeks | 8 | 260A | 60V | 960mW Ta 170W Tc | N-Channel | 8100pF @ 30V | 1.29m Ω @ 50A, 10V | 2.5V @ 1mA | 260A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC035N10NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc035n10ns5atma1-datasheets-1965.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 8 | yes | EAR99 | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 22 ns | 47 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 2.5W Ta 156W Tc | 400A | 0.0035Ohm | 300 mJ | 100V | N-Channel | 6500pF @ 50V | 3.5m Ω @ 50A, 10V | 3.8V @ 115μA | 100A Tc | 87nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7463DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7463dpt1ge3-datasheets-1824.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 9.2MOhm | 8 | yes | EAR99 | No | S17-0173-Single | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 25ns | 25 ns | 200 ns | -18.6A | 20V | SILICON | DRAIN | 40V | -3V | 1.9W Ta | 60A | -40V | P-Channel | -3 V | 9.2m Ω @ 18.6A, 10V | 3V @ 250μA | 11A Ta | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDMS3662 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms3662-datasheets-2008.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 10 Weeks | 68.1mg | No SVHC | 14.8MOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 25 ns | 15ns | 6 ns | 32 ns | 8.9A | 20V | SILICON | DRAIN | SWITCHING | 3.5V | 2.5W Ta 104W Tc | 49A | 90A | 100V | N-Channel | 4620pF @ 50V | 3.5 V | 14.8m Ω @ 8.9A, 10V | 4.5V @ 250μA | 8.9A Ta 49A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSC060N10NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc060n10ns3gatma1-datasheets-1917.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PDSO-F5 | 20 ns | 16ns | 12 ns | 45 ns | 14.9A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 125W Tc | 360A | 0.006Ohm | 230 mJ | N-Channel | 4900pF @ 50V | 6m Ω @ 50A, 10V | 3.5V @ 90μA | 14.9A Ta 90A Tc | 68nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FDB52N20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fdb52n20tm-datasheets-2044.pdf | 200V | 52A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.98mm | 5.08mm | 10.16mm | Lead Free | 2 | 6 Weeks | 1.31247g | No SVHC | 49mOhm | 3 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | 1 | Single | 357W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 53 ns | 160ns | 150 ns | 48 ns | 52A | 30V | SILICON | DRAIN | SWITCHING | 5V | 357W Tc | 208A | 2520 mJ | 200V | N-Channel | 2900pF @ 25V | 5 V | 49m Ω @ 26A, 10V | 5V @ 250μA | 52A Tc | 63nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| BSC010N04LSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc010n04lsiatma1-datasheets-2027.pdf | 8-PowerTDFN | Contains Lead | 3 | 39 Weeks | 8 | no | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | R-PDSO-F3 | 48ns | 17 ns | 72 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W Ta 139W Tc | 37A | 400A | 230 mJ | 40V | N-Channel | 6200pF @ 20V | 1.05m Ω @ 50A, 10V | 2V @ 250μA | 37A Ta 100A Tc | 87nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SQD50P06-15L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0615lge3-datasheets-2069.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 12 Weeks | 1 | 136W | 175°C | TO-252, (D-Pak) | 15 ns | 112 ns | -50A | 20V | 60V | -1.5V | 136W Tc | 13.5mOhm | -60V | P-Channel | 5910pF @ 25V | 15.5mOhm @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 150nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP100N8F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp100n8f6-datasheets-2102.pdf | TO-220-3 | 20 Weeks | EAR99 | NOT SPECIFIED | STP100 | NOT SPECIFIED | FET General Purpose Power | 100A | Single | 80V | 176W Tc | N-Channel | 5955pF @ 25V | 9m Ω @ 50A, 10V | 4V @ 250μA | 100A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC320N20NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-bsc320n20ns3gatma1-datasheets-1876.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PDSO-F5 | 9ns | 36A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 125W Tc | 0.032Ohm | N-Channel | 2350pF @ 100V | 32m Ω @ 36A, 10V | 4V @ 90μA | 36A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC082N10LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc082n10lsgatma1-datasheets-1119.pdf | 8-PowerTDFN | Contains Lead | 5 | 16 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 156W | 1 | Not Qualified | R-PDSO-F5 | 24ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 156W Tc | 400A | 377 mJ | N-Channel | 7400pF @ 50V | 8.2m Ω @ 100A, 10V | 2.4V @ 110μA | 13.8A Ta 100A Tc | 104nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P10-43L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50p1043le3-datasheets-1689.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 43mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 8.3W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 15 ns | 160ns | 100 ns | 110 ns | -9.2A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 8.3W Ta 136W Tc | 40A | -100V | P-Channel | 4600pF @ 50V | 43m Ω @ 9.2A, 10V | 3V @ 250μA | 37.1A Tc | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| CSD18502Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | 260 | CSD18502 | Single | 3.2W | 1 | FET General Purpose Powers | 5.3 ns | 6.8ns | 4 ns | 23 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 3.2W Ta 156W Tc | 26A | 0.0033Ohm | 27 pF | 40V | N-Channel | 5070pF @ 20V | 2.3m Ω @ 30A, 10V | 2.2V @ 250μA | 26A Ta 100A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7489DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7489dpt1ge3-datasheets-1663.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 5.2W | 1 | 150°C | R-PDSO-F5 | 15 ns | 160ns | 100 ns | 110 ns | -28A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 5.2W Ta 83W Tc | 40A | -100V | P-Channel | 4600pF @ 50V | 55ns | -3 V | 41m Ω @ 7.8A, 10V | 3V @ 250μA | 28A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIR882DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir882dpt1ge3-datasheets-1286.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | Single | NOT SPECIFIED | 5.4W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5.4W Ta 83W Tc | 45 mJ | 100V | N-Channel | 1930pF @ 50V | 1.2 V | 8.7m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7164DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7164dpt1ge3-datasheets-1812.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 6.25mOhm | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 23 ns | 11ns | 11 ns | 40 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 6.25W Ta 104W Tc | 23.5A | 60V | N-Channel | 2830pF @ 30V | 2.5 V | 6.25m Ω @ 10A, 10V | 4.5V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NDB6060L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-ndb6060l-datasheets-1783.pdf | 60V | 48A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.35mm | 6.35mm | 6.35mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 25mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | GULL WING | Single | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 320ns | 161 ns | 49 ns | 48A | 16V | 60V | SILICON | DRAIN | SWITCHING | 2V | 100W Tc | 200 mJ | 60V | N-Channel | 2000pF @ 25V | 2 V | 20m Ω @ 24A, 10V | 2V @ 250μA | 48A Tc | 60nC @ 5V | 5V 10V | ±16V |
