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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDMS86500L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86500l-datasheets-0201.pdf | 8-PowerTDFN | 5mm | 1.1mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 2.5MOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 150°C | R-PDSO-F5 | 27 ns | 16ns | 7.8 ns | 63 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.5W Ta 104W Tc | MO-240AA | 240 mJ | 60V | N-Channel | 12530pF @ 30V | 1.8 V | 2.5m Ω @ 25A, 10V | 3V @ 250μA | 25A Ta 80A Tc | 165nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| STN3N45K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stn3n45k3-datasheets-9804.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 9 Weeks | No SVHC | 3.8Ohm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STN3N | 4 | Single | 30 | 2W | 1 | FET General Purpose Power | 600mA | 30V | SILICON | DRAIN | SWITCHING | 3.75V | 3W Ta | 0.6A | 450V | N-Channel | 150pF @ 25V | 3.8 Ω @ 500mA, 10V | 4.5V @ 50μA | 600mA Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| ZXMN3A03E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn3a03e6ta-datasheets-9526.pdf | 30V | 4.2A | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 50mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.7W | 1 | FET General Purpose Power | 2.9 ns | 6.4ns | 6.4 ns | 16 ns | 4.6A | 20V | SILICON | SWITCHING | 1.1W Ta | 3.7A | 30V | N-Channel | 600pF @ 25V | 50m Ω @ 7.8A, 10V | 1V @ 250μA | 3.7A Ta | 12.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF1310NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf1310nstrlpbf-datasheets-0241.pdf | 100V | 42A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 36mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 3.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 56ns | 40 ns | 45 ns | 42A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 160W Tc | 270 ns | 420 mJ | 100V | N-Channel | 1900pF @ 25V | 4 V | 36m Ω @ 22A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BSZ097N04LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz097n04lsgatma1-datasheets-9819.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 35W | 1 | Not Qualified | R-PDSO-N5 | 2.4ns | 12A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 35W Tc | 20 mJ | N-Channel | 1900pF @ 20V | 9.7m Ω @ 20A, 10V | 2V @ 14μA | 12A Ta 40A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STL3NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl3nm60n-datasheets-0172.pdf | 8-PowerVDFN | Lead Free | 12 Weeks | No SVHC | 1.8Ohm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STL3 | 2W | 1 | 8.6 ns | 6.2ns | 20 ns | 20.8 ns | 2.2A | 25V | 3V | 2W Ta 22W Tc | 600V | N-Channel | 188pF @ 50V | 1.8 Ω @ 1A, 10V | 4V @ 250μA | 650mA Ta 2.2A Tc | 9.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86201 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86201-datasheets-0036.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 15 Weeks | 68.1mg | No SVHC | 14.5MOhm | 8 | ACTIVE (Last Updated: 10 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 104W | 1 | FET General Purpose Power | R-PDSO-F5 | 13 ns | 7.7ns | 7.1 ns | 27 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 2.6V | 2.5W Ta 104W Tc | MO-240AA | 65A | 264 mJ | 120V | N-Channel | 2735pF @ 60V | 2.6 V | 11.5m Ω @ 11.6A, 10V | 4V @ 250μA | 11.6A Ta 35A Tc | 46nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BSC052N03LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc052n03lsatma1-datasheets-9744.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | No SVHC | 8 | no | EAR99 | Tin | No | e3 | Halogen Free | DUAL | FLAT | 8 | 2.5W | 1 | R-PDSO-F5 | 2.4 ns | 3.6ns | 2.4 ns | 13 ns | 17A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.5W Ta 28W Tc | 0.0072Ohm | N-Channel | 770pF @ 15V | 5.2m Ω @ 30A, 10V | 2V @ 250μA | 17A Ta 57A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI9435BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9435bdyt1e3-datasheets-9791.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 12 Weeks | 186.993455mg | Unknown | 42mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.3W | 1 | Other Transistors | 14 ns | 14ns | 14 ns | 42 ns | -5.7A | 20V | SILICON | 30V | 30V | -1V | 1.3W Ta | P-Channel | -1 V | 42m Ω @ 5.7A, 10V | 3V @ 250μA | 4.1A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AOD409 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/alphaomegasemiconductor-aod409-datasheets-5291.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 18 Weeks | 3 | yes | EAR99 | No | SINGLE | GULL WING | 3 | 60W | 1 | R-PSSO-G2 | 26A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 60W Tc | 60A | 0.055Ohm | P-Channel | 3600pF @ 30V | 40m Ω @ 20A, 10V | 2.4V @ 250μA | 26A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ036NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz036ne2lsatma1-datasheets-9851.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | No SVHC | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | R-PDSO-N3 | 3.3 ns | 2.8ns | 2.2 ns | 15 ns | 16A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.1W Ta 37W Tc | 40 mJ | N-Channel | 1200pF @ 12V | 3.6m Ω @ 20A, 10V | 2V @ 250μA | 16A Ta 40A Tc | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SISS27DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siss27dnt1ge3-datasheets-9758.pdf | PowerPAK® 1212-8S | 830μm | 5 | 14 Weeks | 8 | EAR99 | No | DUAL | 1 | Single | 4.8W | 1 | 150°C | S-PDSO-N5 | 16 ns | 45ns | 20 ns | 65 ns | -23A | 20V | SILICON | DRAIN | SWITCHING | 30V | 4.8W Ta 57W Tc | 50A | 200A | 0.0056Ohm | -30V | P-Channel | 5250pF @ 15V | 5.6m Ω @ 15A, 10V | 2.2V @ 250μA | 50A Tc | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC050N04LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-bsc050n04lsgatma1-datasheets-9773.pdf | 8-PowerTDFN | Contains Lead | 5 | 39 Weeks | No SVHC | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 57W | 1 | Not Qualified | R-PDSO-F5 | 3.8ns | 85A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 57W Tc | 340A | 0.0072Ohm | 35 mJ | N-Channel | 3700pF @ 20V | 5m Ω @ 50A, 10V | 2V @ 27μA | 18A Ta 85A Tc | 47nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTMFS4841NHT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4841nht1g-datasheets-9595.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 6 | 16 Weeks | 8 | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | 260 | 8 | Single | 40 | 5.7W | 1 | FET General Purpose Powers | R-PDSO-F6 | 12.1 ns | 20.6ns | 2.9 ns | 21.9 ns | 13.5A | 20V | SILICON | DRAIN | SWITCHING | 870mW Ta 41.7W Tc | 59A | 30V | N-Channel | 2113pF @ 12V | 7m Ω @ 30A, 10V | 2.5V @ 250μA | 8.6A Ta 59A Tc | 33nC @ 11.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTTFS5116PLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nttfs5116pltag-datasheets-9913.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 18 Weeks | No SVHC | 52MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 260 | 8 | Single | 40W | 1 | Other Transistors | S-PDSO-F5 | 15 ns | 58ns | 37 ns | 30 ns | 5.7A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 3.2W Ta 40W Tc | 20A | 76A | 45 mJ | -60V | P-Channel | 1258pF @ 30V | 52m Ω @ 6A, 10V | 3V @ 250μA | 5.7A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| ZXMP10A17E6QTA | Diodes Incorporated | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-zxmp10a17e6qta-datasheets-9607.pdf | SOT-23-6 | 15 Weeks | SOT-26 | 424pF | 1.3A | 100V | 1.1W Ta | P-Channel | 424pF @ 50V | 350mOhm @ 1.4A, 10V | 4V @ 250μA | 1.3A Ta | 10.7nC @ 10V | 350 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN011-60MLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/nexperiausainc-psmn01160mlx-datasheets-9181.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | Tin | No | YES | SINGLE | GULL WING | 8 | 91W | 1 | R-PSSO-G4 | 13.3 ns | 20.2ns | 15.5 ns | 27.7 ns | 61A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 91W Tc | 242A | N-Channel | 2191pF @ 30V | 11.3m Ω @ 15A, 10V | 2.45V @ 1mA | 61A Tc | 37.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL9110TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfl9110trpbf-datasheets-9205.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 8 Weeks | 250.212891mg | Unknown | 1.2Ohm | 4 | No | 1 | 2W | 1 | 150°C | SOT-223 | 200pF | 10 ns | 27ns | 17 ns | 15 ns | -1.1A | 20V | 100V | -4V | 2W Ta 3.1W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 660mA, 10V | 4V @ 250μA | 1.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SPD09P06PLGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-spd09p06plgbtma1-datasheets-9907.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 42W | 1 | Not Qualified | R-PSSO-G2 | 9.7A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 42W Tc | TO-252AB | 0.25Ohm | 70 mJ | P-Channel | 450pF @ 25V | 250m Ω @ 6.8A, 10V | 2V @ 250μA | 9.7A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQB22P10TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fqb22p10tm-datasheets-0002.pdf | -100V | -22A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 4 Weeks | 1.31247g | No SVHC | 125mOhm | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 125W | 1 | Other Transistors | R-PSSO-G2 | 17 ns | 170ns | 110 ns | 60 ns | -22A | 30V | 100V | SILICON | DRAIN | SWITCHING | -4V | 3.75W Ta 125W Tc | 88A | -100V | P-Channel | 1500pF @ 25V | 125m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SI7461DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7461dpt1e3-datasheets-0011.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 14.5mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 20 ns | 20ns | 20 ns | 205 ns | -12.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 1.9W Ta | 60A | -60V | P-Channel | -3 V | 14.5m Ω @ 14.4A, 10V | 3V @ 250μA | 8.6A Ta | 190nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BSC110N06NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc110n06ns3gatma1-datasheets-0015.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-F5 | 10 ns | 77ns | 6 ns | 14 ns | 50A | 12V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 50W Tc | 200A | 22 mJ | N-Channel | 2700pF @ 30V | 11m Ω @ 50A, 10V | 4V @ 23μA | 50A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFHM9331TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfhm9331trpbf-datasheets-9096.pdf | 8-PowerTDFN | 2.9972mm | 1mm | 2.9972mm | Lead Free | 5 | 12 Weeks | No SVHC | 14.6MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 1 | Single | 2.8W | 1 | Other Transistors | 150°C | S-PDSO-N5 | 11 ns | 27ns | 60 ns | 72 ns | -11A | 25V | SILICON | DRAIN | SWITCHING | 30V | -1.8V | 2.8W Ta | 24A | 90A | 76 mJ | -30V | P-Channel | 1543pF @ 25V | 10m Ω @ 11A, 20V | 2.4V @ 25μA | 11A Ta 24A Tc | 48nC @ 10V | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||
| FDS8447 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds8447-datasheets-9464.pdf | 40V | 12.8A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | 130mg | No SVHC | 10.5MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 11 ns | 14ns | 7 ns | 27 ns | 12.8A | 20V | SILICON | 1.8V | 2.5W Ta | 50A | 40V | N-Channel | 2600pF @ 20V | 10.5m Ω @ 12.8A, 10V | 3V @ 250μA | 12.8A Ta | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STN2NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stn2nf10-datasheets-9453.pdf | 100V | 2A | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 12 Weeks | 4.535924g | No SVHC | 260mOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | STN2N | 4 | Single | 30 | 3.3W | 1 | FET General Purpose Power | 6 ns | 10ns | 3 ns | 20 ns | 2A | 20V | SILICON | SWITCHING | 4V | 3.3W Tc | 2A | 8A | 300 mJ | 100V | N-Channel | 280pF @ 25V | 260m Ω @ 1.2A, 10V | 4V @ 250μA | 2.4A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| FDS5351 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds5351-datasheets-9545.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.57mm | 3.9mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 35MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 5W | 1 | FET General Purpose Power | 8 ns | 3ns | 2 ns | 21 ns | 6.1A | 20V | SILICON | SWITCHING | 2V | 5W Ta | 30A | 73 mJ | 60V | N-Channel | 1310pF @ 30V | 2 V | 35m Ω @ 6.1A, 10V | 3V @ 250μA | 6.1A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI2323CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2323cdst1ge3-datasheets-9133.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 15 ns | 23ns | 12 ns | 40 ns | -4.6A | 8V | SILICON | SWITCHING | 20V | -400mV | 1.25W Ta 2.5W Tc | 6A | -20V | P-Channel | 1090pF @ 10V | -400 mV | 39m Ω @ 4.6A, 4.5V | 1V @ 250μA | 6A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| EPC2036 | EPC | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2036-datasheets-9662.pdf | Die | 815μm | 14 Weeks | 1 | 150°C | Die | 90pF | 1.7A | 100V | 62mOhm | 100V | N-Channel | 90pF @ 50V | 65mOhm @ 1A, 5V | 2.5V @ 600μA | 1.7A Ta | 0.91nC @ 5V | 65 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD2955T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntd2955t4g-datasheets-9712.pdf&product=onsemiconductor-ntd2955t4g-6383090 | -60V | -12A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 180mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | 1 | Single | 40 | 55W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 45ns | 48 ns | 26 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 60V | -2.8V | 55W Tj | -60V | P-Channel | 750pF @ 25V | -2.8 V | 180m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| CMUDM7005 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmudm7005trpbfree-datasheets-9727.pdf | SOT-523 | 42 Weeks | YES | FET General Purpose Power | Single | 20V | 300mW Ta | 0.65A | N-Channel | 100pF @ 16V | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 650mA Ta | 1.58nC @ 4.5V | 1.5V 4.5V | 8V |
