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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSP89,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/nexperiausainc-bsp89115-datasheets-7474.pdf | TO-261-4, TO-261AA | 4 | 4 Weeks | 3 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 4 | 1.5W | 1 | R-PDSO-G4 | 373mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 240V | 240V | 1.5W Ta | 1.5A | 7.5Ohm | N-Channel | 120pF @ 25V | 5 Ω @ 340mA, 10V | 2V @ 1mA | 375mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL024ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irll024ztrpbf-datasheets-8545.pdf | TO-261-4, TO-261AA | 6.6802mm | 1.4478mm | 3.7mm | Lead Free | 4 | 12 Weeks | 60MOhm | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 2.8W | 1 | R-PDSO-G4 | 8.6 ns | 33ns | 15 ns | 20 ns | 5A | 16V | SILICON | DRAIN | SWITCHING | 1W Ta | 5A | 40A | 55V | N-Channel | 380pF @ 25V | 60m Ω @ 3A, 10V | 3V @ 250μA | 5A Tc | 11nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| DMN2011UFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn2011ufde7-datasheets-8278.pdf | 6-UDFN Exposed Pad | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DMN2011 | 1 | Single | 3.6 ns | 2.6ns | 13.5 ns | 21.6 ns | 11.7A | 12V | 20V | 610mW Ta | N-Channel | 2248pF @ 10V | 9.5m Ω @ 7A, 4.5V | 1V @ 250μA | 11.7A Ta | 56nC @ 10V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN026-80YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn02680ys115-datasheets-8158.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 4.535924g | 27.5MOhm | 4 | EAR99 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 74W | 1 | 15 ns | 6ns | 5 ns | 26 ns | 34A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 74W Tc | 32 mJ | 80V | N-Channel | 1200pF @ 40V | 27.5m Ω @ 5A, 10V | 4V @ 1mA | 34A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| ZXMP6A17GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-zxmp6a17gta-datasheets-8299.pdf | -60V | -4.1A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 125mOhm | 4 | no | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | Other Transistors | 150°C | 2.6 ns | 3.4ns | 11.3 ns | 26.2 ns | -3A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1V | 2W Ta | 3A | -60V | P-Channel | 637pF @ 30V | 125m Ω @ 2.2A, 10V | 1V @ 250μA | 3A Ta | 17.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SI5442DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5442dut1ge3-datasheets-8289.pdf | PowerPAK® ChipFET™ Single | 900μm | Lead Free | 14 Weeks | 8 | yes | EAR99 | No | C14-0630-ChipFET-Single | Pure Matte Tin (Sn) | 260 | 1 | Single | 30 | 3.1W | FET General Purpose Powers | 150°C | 10 ns | 15ns | 10 ns | 30 ns | 12.4A | 8V | 3.1W Ta 31W Tc | 25A | 20V | N-Channel | 1700pF @ 10V | 10m Ω @ 8A, 4.5V | 900mV @ 250μA | 25A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTNS3193NZT5G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntns3193nzt5g-datasheets-8394.pdf | 3-XFLGA | Lead Free | 6 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | 3 | Single | FET General Purpose Power | 18 ns | 35ns | 110 ns | 201 ns | 224mA | 8V | 120mW Ta | 0.224A | 20V | N-Channel | 15.8pF @ 15V | 1.4 Ω @ 100mA, 4.5V | 1V @ 250μA | 224mA Ta | 0.7nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA430NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdma430nz-datasheets-8212.pdf | 6-VDFN Exposed Pad | 2mm | 825μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 40MOhm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | DUAL | 1 | Single | 900mW | 1 | FET General Purpose Power | 150°C | 8.3 ns | 7.1ns | 7.1 ns | 18.1 ns | 5A | 12V | 30V | SILICON | DRAIN | 810mV | 2.4W Ta | 5A | 20A | 30V | N-Channel | 800pF @ 10V | 810 mV | 40m Ω @ 5A, 4.5V | 1.5V @ 250μA | 5A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| FDZ191P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdz191p-datasheets-8144.pdf | -20V | -3A | 6-UFBGA, WLCSP | 1.5mm | 370μm | 1mm | Lead Free | 6 | 10 Weeks | 54mg | No SVHC | 85MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | Single | 1.5W | 1 | Other Transistors | 11 ns | 10ns | 10 ns | 50 ns | -3A | 8V | SILICON | SWITCHING | 20V | 600mV | 1.9W Ta | 3A | -20V | P-Channel | 800pF @ 10V | 85m Ω @ 1A, 4.5V | 1.5V @ 250μA | 3A Ta | 13nC @ 10V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| ZXMN3A14FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn3a14fta-datasheets-7979.pdf | 30V | 3.5A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 65mOhm | 3 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 2.4 ns | 2.5ns | 5.3 ns | 13.1 ns | 3.9A | 20V | SILICON | SWITCHING | 1W Ta | 30V | N-Channel | 448pF @ 15V | 65m Ω @ 3.2A, 10V | 1V @ 250μA | 3.2A Ta | 8.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| ZXMN3B14FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn3b14fta-datasheets-8179.pdf | 30V | 3.5A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 80mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.5W | 1 | 3.6 ns | 4.9ns | 9.8 ns | 17.3 ns | 3.5A | 12V | SILICON | SWITCHING | 1W Ta | 2.9A | 30V | N-Channel | 568pF @ 15V | 80m Ω @ 3.1A, 4.5V | 700mV @ 250μA | 2.9A Ta | 6.7nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| NTF3055L108T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntf3055l108t1g-datasheets-8182.pdf | 60V | 3A | TO-261-4, TO-261AA | 6.5mm | 1.57mm | 3.5mm | Lead Free | 4 | 11 Weeks | No SVHC | 120MOhm | 4 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 4 | Single | 40 | 2.1W | 1 | FET General Purpose Power | 11 ns | 35ns | 27 ns | 22 ns | 3A | 15V | SILICON | DRAIN | SWITCHING | 1.68V | 1.3W Ta | 3A | 9A | 60V | N-Channel | 440pF @ 25V | 1.68 V | 120m Ω @ 1.5A, 5V | 2V @ 250μA | 3A Ta | 15nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||
| PSMN075-100MSEX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn075100msex-datasheets-8173.pdf | SOT-1210, 8-LFPAK33 | Lead Free | 4 | 26 Weeks | 8 | Tin | not_compliant | e3 | YES | GULL WING | 260 | 8 | 1 | Single | 30 | 65W | 1 | R-PSSO-G4 | 5.5 ns | 5.8ns | 6.2 ns | 12.4 ns | 18A | 20V | 100V | SILICON | DRAIN | SWITCHING | 65W Tc | 74A | 25 mJ | 100V | N-Channel | 773pF @ 50V | 71m Ω @ 5A, 10V | 4V @ 1mA | 18A Tj | 16.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQT1N60CTF-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqt1n60ctfws-datasheets-8203.pdf | TO-261-4, TO-261AA | 4 | 17 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 2.1W Tc | 0.2A | 6 pF | N-Channel | 170pF @ 25V | 11.5 Ω @ 100mA, 10V | 4V @ 250μA | 200mA Tc | 6.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4431CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4431cdyt1ge3-datasheets-8251.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 32MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | 150°C | 10 ns | 89ns | 11 ns | 23 ns | -9A | 20V | SILICON | SWITCHING | 30V | -2.5V | 2.5W Ta 4.2W Tc | 7A | -30V | P-Channel | 1006pF @ 15V | 32m Ω @ 7A, 10V | 2.5V @ 250μA | 9A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| CSD17578Q3A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 800μm | EAR99 | AVALANCHE RATED | Copper, Tin | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | CSD17578 | Single | NOT SPECIFIED | 1 | 2 ns | 6ns | 1 ns | 13 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 37W Tc | 14A | 142A | 0.0094Ohm | 73 pF | 24 mJ | N-Channel | 1590pF @ 15V | 7.3m Ω @ 10A, 10V | 1.9V @ 250μA | 20A Ta | 22.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| DMP2047UCB4-7 | Diodes Incorporated | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2047ucb47-datasheets-8261.pdf | 4-UFBGA, WLBGA | 1.05mm | 380μm | 1.05mm | 4 | 23 Weeks | 4 | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | AEC-Q101 | BOTTOM | BALL | Single | 1 | 7.9 ns | 10.7ns | 38 ns | 48 ns | 4.1A | -6V | SILICON | SWITCHING | 20V | 20V | 1W Ta | 3.6A | 0.06Ohm | P-Channel | 218pF @ 10V | 47m Ω @ 1A, 4.5V | 1.2V @ 250μA | 4.1A Ta | 2.3nC @ 4.5V | 2.5V 4.5V | |||||||||||||||||||||||||||||||||||||||||||
| BUK9Y29-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y2940e115-datasheets-7669.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | 1 | 6 ns | 7ns | 5 ns | 9 ns | 25A | 10V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 37W Tc | MO-235 | 0.029Ohm | 8.77 mJ | N-Channel | 664pF @ 25V | 25m Ω @ 5A, 10V | 2.1V @ 1mA | 25A Tc | 5nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| ZVN3310FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zvn3310fta-datasheets-8117.pdf | 100V | 100mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 10Ohm | 3 | yes | EAR99 | No | 100mA | e3 | Matte Tin (Sn) | 100V | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 330mW | 1 | FET General Purpose Powers | 3 ns | 5ns | 5 ns | 4 ns | 100mA | 20V | 100V | SILICON | SWITCHING | 2.4V | 330mW Ta | 5 pF | 100V | N-Channel | 40pF @ 25V | 2.4 V | 10 Ω @ 500mA, 10V | 2.4V @ 1mA | 100mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||
| PSMN4R0-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn4r030yldx-datasheets-8122.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | No | YES | SINGLE | GULL WING | 4 | 1 | 1 | 10.7 ns | 21.2ns | 11.7 ns | 14.9 ns | 95A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 64W Tc | MO-235 | 378A | 0.0055Ohm | 63 mJ | 30V | N-Channel | 1272pF @ 15V | 4m Ω @ 25A, 10V | 2.2V @ 1mA | 95A Tc | 19.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| FQD7N10LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd7n10ltm-datasheets-8128.pdf | 100V | 5.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 350mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 100ns | 50 ns | 17 ns | 5.8A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 25W Tc | 50 mJ | 100V | N-Channel | 290pF @ 25V | 350m Ω @ 2.9A, 10V | 2V @ 250μA | 5.8A Tc | 6nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMP4025SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4025sfg13-datasheets-7826.pdf | 8-PowerVDFN | 16 Weeks | 72.007789mg | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | 1.95W | Other Transistors | 6.9 ns | 14.7ns | 30.9 ns | 53.7 ns | 7.2A | 20V | Single | 40V | 810mW Ta | -40V | P-Channel | 1643pF @ 20V | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 4.65A Ta | 33.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6236 | Alpha & Omega Semiconductor Inc. | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | Lead Free | 16 Weeks | 8 | 39W | 1 | 30A | 20V | 40V | 4.2W Ta 39W Tc | N-Channel | 1225pF @ 20V | 7m Ω @ 20A, 10V | 2.4V @ 250μA | 19A Ta 30A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP10H400SE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp10h400se13-datasheets-7958.pdf | TO-261-4, TO-261AA | 4 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G4 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2W Ta 13.7W Tc | 2.3A | 10A | 0.3Ohm | P-Channel | 1239pF @ 25V | 250m Ω @ 5A, 10V | 3V @ 250μA | 2.3A Ta 6A Tc | 17.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4025SFGQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4025sfg13-datasheets-7826.pdf | 8-PowerVDFN | 15 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 810mW Ta | P-Channel | 1643pF @ 20V | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 7.2A Ta | 33.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17579Q3A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 800μm | EAR99 | AVALANCHE RATED | Copper, Tin | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | CSD17579 | Single | NOT SPECIFIED | 1 | 2 ns | 5ns | 1 ns | 11 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 29W Tc | 11A | 106A | 0.0142Ohm | 49 pF | 14 mJ | N-Channel | 998pF @ 15V | 10.2m Ω @ 8A, 10V | 1.9V @ 250μA | 20A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI5457DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5457dct1ge3-datasheets-7495.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | 36mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 2.3W | 1 | 25 ns | 20ns | 12 ns | 30 ns | 6A | 12V | SILICON | SWITCHING | 20V | 5.7W Tc | 6A | -20V | P-Channel | 1000pF @ 10V | 36m Ω @ 4.9A, 4.5V | 1.4V @ 250μA | 6A Tc | 38nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| SIA441DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia441djt1ge3-datasheets-8030.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 3.5W | 1 | Other Transistors | S-PDSO-N3 | 6.6A | 20V | SILICON | DRAIN | SWITCHING | 40V | 19W Tc | 30A | 0.047Ohm | 8.5 mJ | -40V | P-Channel | 890pF @ 20V | -1.2 V | 47m Ω @ 4.4A, 10V | 2.2V @ 250μA | 12A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NDS355N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-nds355n-datasheets-8033.pdf | 30V | 1.6A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 10 Weeks | 30mg | 125mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | GULL WING | 1 | Single | 500mW | 1 | 15 ns | 14ns | 14 ns | 12 ns | 1.6A | 20V | SILICON | SWITCHING | 500mW Ta | 30V | N-Channel | 245pF @ 10V | 85m Ω @ 1.9A, 10V | 2V @ 250μA | 1.6A Ta | 5nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSZ130N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz130n03lsgatma1-datasheets-8042.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | 8 | 25W | 1 | Not Qualified | S-PDSO-N5 | 2.6ns | 35A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 25W Tc | 140A | 0.013Ohm | 9 mJ | N-Channel | 970pF @ 15V | 13m Ω @ 20A, 10V | 2.2V @ 250μA | 10A Ta 35A Tc | 13nC @ 10V | 4.5V 10V | ±20V |
