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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFN110N60P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfn110n60p3-datasheets-2684.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | Lead Free | 4 | 30 Weeks | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 1.5kW | 1 | FET General Purpose Power | Not Qualified | 63 ns | 19ns | 11 ns | 77 ns | 90A | 30V | SILICON | ISOLATED | SWITCHING | 1500W Tc | 275A | 0.056Ohm | 3000 mJ | 600V | N-Channel | 18000pF @ 25V | 56m Ω @ 55A, 10V | 5V @ 8mA | 90A Tc | 245nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN66N85X | IXYS | $35.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfn66n85x-datasheets-2691.pdf | SOT-227-4, miniBLOC | 19 Weeks | yes | unknown | 65A | 850V | 830W Tc | N-Channel | 8900pF @ 25V | 65m Ω @ 33A, 10V | 5.5V @ 8mA | 65A Tc | 230nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002KT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-2n7002kt1g-datasheets-2546.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.11mm | 1.4mm | Lead Free | 3 | 7 Weeks | No SVHC | 1.6Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 420mW | 1 | FET General Purpose Power | 150°C | 12.2 ns | 9ns | 9 ns | 55.8 ns | 380mA | 20V | SILICON | SWITCHING | 2.3V | 350mW Ta | 5 pF | 60V | N-Channel | 24.5pF @ 20V | 2.3 V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 320mA Ta | 0.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| T2N7002BK,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-t2n7002bklm-datasheets-2487.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | unknown | 400mA | 60V | 320mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 400mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH20P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth20p50p-datasheets-2496.pdf | TO-247-3 | 3 | 28 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 80 ns | 20A | SILICON | DRAIN | SWITCHING | 500V | 460W Tc | 60A | 0.45Ohm | 2500 mJ | -500V | P-Channel | 5120pF @ 25V | 450m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STFW4N150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfw4n150-datasheets-2498.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | Lead Free | 3 | 8 Weeks | No SVHC | 7Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | SINGLE | STFW | 3 | 63W | 1 | FET General Purpose Power | 35 ns | 30ns | 45 ns | 45 ns | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1500V | 4V | 63W Tc | 4A | 1.5kV | N-Channel | 1300pF @ 25V | 7 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT50M65JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m65jfll-datasheets-2512.pdf | 500V | 58A | SOT-227-4, miniBLOC | Lead Free | 4 | 26 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | 12 ns | 28ns | 30 ns | 29 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 232A | 0.065Ohm | 3000 mJ | N-Channel | 7010pF @ 25V | 65m Ω @ 29A, 10V | 5V @ 2.5mA | 58A Tc | 141nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTN60N50L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn60n50l2-datasheets-3222.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 28 Weeks | No SVHC | 4 | yes | EAR99 | UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 53A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 2.5V | 735W Tc | 30A | 150A | 0.1Ohm | 3000 mJ | N-Channel | 24000pF @ 25V | 2.5 V | 100m Ω @ 30A, 10V | 4.5V @ 250μA | 53A Tc | 610nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| DMN63D8LW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn63d8lw13-datasheets-2517.pdf | SC-70, SOT-323 | 1.1mm | 3 | 14 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 300mW | 1 | 150°C | R-PDSO-G3 | 2.3 ns | 11.4 ns | 380mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300mW Ta | 0.38A | 4.5Ohm | 30V | N-Channel | 23.2pF @ 25V | 2.8 Ω @ 250mA, 10V | 1.5V @ 250μA | 380mA Ta | 0.9nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SCT3160KLGC11 | ROHM Semiconductor | $9.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | TO-247-3 | 25.5mm | Lead Free | 3 | 21 Weeks | yes | TZ_TO-247N | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 103W | 1 | 175°C | R-PSFM-T3 | 14 ns | 24 ns | 17A | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 5.6V | 103W Tc | 42A | 0.208Ohm | 1.2kV | N-Channel | 398pF @ 800V | 208m Ω @ 5A, 18V | 5.6V @ 2.5mA | 17A Tc | 42nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002BKVL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/nexperiausainc-2n7002bkvl-datasheets-2503.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | LOGIC LEVEL COMPATIBLE | AEC-Q101; IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 370mW Ta | TO-236AB | 0.35A | N-Channel | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 350mA Ta | 0.6nC @ 4.5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NX138AKR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-nx138akr-datasheets-2553.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 325mW Ta | TO-236AB | 0.19A | N-Channel | 20pF @ 30V | 4.5 Ω @ 190mA, 10V | 1.5V @ 250μA | 190mA Ta | 1.4nC @ 10V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6660 | Microchip Technology | $14.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/microchiptechnology-2n6660-datasheets-2573.pdf | TO-205AD, TO-39-3 Metal Can | Lead Free | 6 Weeks | 3 | Gold | No | 11A | 60V | 1 | Single | 6.25W | 1 | TO-39 | 50pF | 10 ns | 10 ns | 410mA | 20V | 60V | 6.25W Tc | 3Ohm | 60V | N-Channel | 50pF @ 24V | 3Ohm @ 1A, 10V | 2V @ 1mA | 410mA Ta | 3 Ω | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R041CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r041cfdfksa1-datasheets-2579.pdf | TO-247-3 | 3 | 26 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 500W Tc | 68.5A | 255A | 0.041Ohm | 2185 mJ | N-Channel | 8400pF @ 100V | 41m Ω @ 33.1A, 10V | 4.5V @ 3.3mA | 68.5A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT02N450HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtt02n450hv-datasheets-3204.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | GULL WING | Single | 113W | 1 | FET General Purpose Power | R-PSSO-G2 | 48ns | 143 ns | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 4500V | 113W Tc | 0.2A | 0.6A | 625Ohm | 4.5kV | N-Channel | 256pF @ 25V | 750 Ω @ 10mA, 10V | 6.5V @ 250μA | 200mA Tc | 10.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK90N25L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtk90n25l2-datasheets-3207.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | No SVHC | 33MOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 90A | 20V | SILICON | DRAIN | SWITCHING | 2V | 960W Tc | 250V | N-Channel | 23000pF @ 25V | 2 V | 33m Ω @ 45A, 10V | 4.5V @ 3mA | 90A Tc | 640nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SCT3040KLGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | Lead Free | 3 | 21 Weeks | yes | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 55A | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 262W Tc | 137A | 0.052Ohm | N-Channel | 1337pF @ 800V | 52m Ω @ 20A, 18V | 5.6V @ 10mA | 55A Tc | 107nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP110N20N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp110n20n3gxksa1-datasheets-2472.pdf | TO-220-3 | 20.7mm | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 300W | 1 | Not Qualified | 175°C | 18 ns | 26ns | 11 ns | 41 ns | 88A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 560 mJ | 200V | N-Channel | 7100pF @ 100V | 11m Ω @ 88A, 10V | 4V @ 270μA | 88A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SSM3K72KCT,L3F | Toshiba Semiconductor and Storage | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SC-101, SOT-883 | 12 Weeks | 400mA | 60V | 500mW Ta | N-Channel | 40pF @ 10V | 1.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 400mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3030ALGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 25.5mm | Lead Free | 3 | 21 Weeks | yes | not_compliant | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 262W | 1 | 175°C | R-PSFM-T3 | 22 ns | 48 ns | 70A | SINGLE WITH BUILT-IN DIODE | SWITCHING | 262W Tc | 0.039Ohm | 650V | N-Channel | 1526pF @ 500V | 39m Ω @ 27A, 18V | 5.6V @ 13.3mA | 70A Tc | 104nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW56N60M2-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw56n60m24-datasheets-2327.pdf | TO-247-4 | 15.9mm | 21.1mm | 5.1mm | 26 Weeks | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW56N | Single | NOT SPECIFIED | FET General Purpose Power | 18 ns | 119 ns | 52A | 25V | 600V | 350W Tc | N-Channel | 3750pF @ 100V | 55m Ω @ 26A, 10V | 4V @ 250μA | 52A Tc | 91nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH16N120P | IXYS | $7.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh16n120p-datasheets-2331.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 660W | 1 | FET General Purpose Power | R-PSFM-T3 | 28ns | 35 ns | 66 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 660W Tc | TO-247AD | 35A | 0.95Ohm | 800 mJ | 1.2kV | N-Channel | 6900pF @ 25V | 950m Ω @ 8A, 10V | 6.5V @ 1mA | 16A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTK200N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtk200n10l2-datasheets-3182.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 200A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1040W Tc | 500A | 0.011Ohm | 5000 mJ | N-Channel | 23000pF @ 25V | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 200A Tc | 540nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SCT2H12NZGC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-sct2h12nzgc11-datasheets-2335.pdf | TO-3PFM, SC-93-3 | 26.5mm | Lead Free | 3 | 30 Weeks | Unknown | 3 | not_compliant | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 35W | 1 | 175°C | 16 ns | 35 ns | 3.7A | 22V | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1700V | 2.8V | 35W Tc | 9.2A | 1.7kV | N-Channel | 184pF @ 800V | 1.5 Ω @ 1.1A, 18V | 4V @ 900μA | 3.7A Tc | 14nC @ 18V | 18V | +22V, -6V | ||||||||||||||||||||||||||||||||||||||||||||||||
| T2N7002AK,LM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 12 Weeks | 1 | 320mW | 150°C | SOT-23 | 17pF | 2 ns | 7 ns | 200mA | 20V | 60V | 1.1V | 320mW Ta | 2.8Ohm | 60V | N-Channel | 17pF @ 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250μA | 200mA Ta | 0.35nC @ 4.5V | 3.9 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002P,235 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-2n7002p235-datasheets-2351.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 3 | 420mW | 1 | 3 ns | 4ns | 5 ns | 10 ns | 360mA | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 350mW Ta | 60V | N-Channel | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 360mA Ta | 0.8nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| RK7002BMT116 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/rohmsemiconductor-rk7002bmt116-datasheets-2414.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PDSO-G3 | 3.5 ns | 5ns | 28 ns | 18 ns | 250mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200mW Ta | 0.25A | 3.2Ohm | 60V | N-Channel | 15pF @ 25V | 2.4 Ω @ 250mA, 10V | 2.3V @ 1mA | 250mA Ta | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002LT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-2n7002lt3g-datasheets-2359.pdf | 60V | 115A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | GULL WING | 3 | Single | 300mW | 1 | FET General Purpose Power | 20 ns | 40 ns | 115mA | 20V | SILICON | SWITCHING | 2.5V | 225mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.5 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| APT7M120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1.2kV | 7.1A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 18 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 335W | 1 | R-PSFM-T3 | 14 ns | 8ns | 13 ns | 45 ns | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 335W Tc | TO-247AB | 7A | 575 mJ | N-Channel | 2565pF @ 25V | 2.5 Ω @ 3A, 10V | 5V @ 1mA | 8A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SCT2120AFC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-220-3 | Lead Free | 3 | 19 Weeks | 6.000006g | No SVHC | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 22 ns | 31ns | 19 ns | 60 ns | 29A | 22V | SWITCHING | 4V | 165W Tc | TO-220AB | 72A | 650V | N-Channel | 1200pF @ 500V | 156m Ω @ 10A, 18V | 4V @ 3.3mA | 29A Tc | 61nC @ 18V | 18V | +22V, -6V |
