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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Interface | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Max Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Output Configuration | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9Y59-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y5960e115-datasheets-7225.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 37W | 1 | 6.1 ns | 9.9ns | 7.3 ns | 8.6 ns | 16.7A | 10V | 60V | SILICON | DRAIN | SWITCHING | 37W Tc | MO-235 | 67A | 0.052Ohm | 56 pF | 60V | N-Channel | 715pF @ 25V | 52m Ω @ 5A, 10V | 2.1V @ 1mA | 16.7A Tc | 6.1nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| MTM231232LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SC-70, SOT-323 | 2mm | 800μm | 1.25mm | 3 | 13 Weeks | 6.208546mg | 3 | EAR99 | Tin | unknown | DUAL | GULL WING | NOT SPECIFIED | MTM231232 | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | 25 ns | 25ns | 70 ns | 120 ns | -3A | 10V | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 3A | 0.055Ohm | P-Channel | 1000pF @ 10V | 55m Ω @ 1A, 4V | 1.3V @ 1mA | 3A Ta | 2.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2008UFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp2008ufg7-datasheets-7416.pdf | 8-PowerVDFN | 3.35mm | 850μm | 3.35mm | Lead Free | 5 | 19 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 1 | Single | 40 | 1 | Other Transistors | S-PDSO-N5 | 22 ns | 33ns | 124 ns | 291 ns | 54A | 8V | SILICON | DRAIN | SWITCHING | 20V | 2.4W Ta 41W Tc | -20V | P-Channel | 6909pF @ 10V | 8m Ω @ 12A, 4.5V | 1V @ 250μA | 14A Ta 54A Tc | 72nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SIA427DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sia427djt1ge3-datasheets-7386.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 4 | 14 Weeks | Unknown | 13mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-PDSO-N4 | 20 ns | 20ns | 40 ns | 70 ns | 12A | 5V | SILICON | DRAIN | SWITCHING | 8V | 350mV | 3.5W Ta 19W Tc | 50A | -8V | P-Channel | 2300pF @ 4V | 16m Ω @ 8.2A, 4.5V | 800mV @ 250μA | 12A Tc | 50nC @ 5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||
| BSS192,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/nexperiausainc-bss192115-datasheets-7442.pdf | TO-243AA | 4 Weeks | 3 | 1W | SOT-89 | -200mA | 240V | 560mW Ta 12.5W Tc | 12Ohm | P-Channel | 90pF @ 25V | 12Ohm @ 200mA, 10V | 2.8V @ 1mA | 200mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC5661N-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc5661nf085-datasheets-7330.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 26 Weeks | yes | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.6W Ta | 4.3A | 20A | 0.047Ohm | N-Channel | 763pF @ 25V | 47m Ω @ 4.3A, 10V | 3V @ 250μA | 4.3A Ta | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2319CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2319cdst1ge3-datasheets-7326.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 77mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 150°C | 40 ns | 18 ns | -4.4A | 20V | SILICON | SWITCHING | 40V | -2.5V | 1.25W Ta 2.5W Tc | -40V | P-Channel | 595pF @ 20V | -1.2 V | 77m Ω @ 3.1A, 10V | 2.5V @ 250μA | 4.4A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI2309CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2309cdst1ge3-datasheets-7356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 345mOhm | 3 | EAR99 | No | 12A | e3 | Matte Tin (Sn) | 60V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.7W | 1 | Other Transistors | 40 ns | 35ns | 35 ns | 15 ns | 1.2A | 20V | SILICON | SWITCHING | -1V | 1W Ta 1.7W Tc | -60V | P-Channel | 210pF @ 30V | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 1.6A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AO4484 | Alpha & Omega Semiconductor Inc. | $0.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 8 | 18 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.7W | 1 | FET General Purpose Power | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 1.7W Ta | N-Channel | 1950pF @ 20V | 10m Ω @ 10A, 10V | 3V @ 250μA | 10A Ta | 37nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2318DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2318dst1e3-datasheets-7122.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 150°C | 5 ns | 12ns | 12 ns | 20 ns | 3.9A | 20V | SILICON | SWITCHING | 3V | 750mW Ta | 3A | 40V | N-Channel | 540pF @ 20V | 3 V | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 3A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLMS1503TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlms1503trpbf-datasheets-7166.pdf | 30V | 3.2A | SOT-23-6 | 2.9972mm | 1.143mm | 1.75mm | Lead Free | 6 | 12 Weeks | No SVHC | 100mOhm | 6 | EAR99 | ULTRA LOW RESISTANCE | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1.7W | 1 | 4.6 ns | 4.4ns | 2 ns | 10 ns | 3.2A | 20V | SILICON | SWITCHING | 1V | 1.7W Ta | 36 ns | 30V | N-Channel | 210pF @ 25V | 1 V | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 3.2A Ta | 9.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDN304PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdn304pz-datasheets-7177.pdf | -20V | -2.4A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 940μm | 1.4mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 52MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 500mW | 1 | Other Transistors | 15 ns | 15ns | 15 ns | 40 ns | -2.4A | 8V | -20V | SILICON | SWITCHING | -800mV | 500mW Ta | 20V | -20V | P-Channel | 1310pF @ 10V | -800 mV | 52m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2.4A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| VN10LFTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-vn10lfta-datasheets-7188.pdf | 60V | 150mA | TO-236-3, SC-59, SOT-23-3 | 3.05mm | 1mm | 3.05mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 5Ohm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 330mW | 1 | FET General Purpose Powers | Not Qualified | 150mA | 20V | 60V | SILICON | 2.5V | 330mW Ta | 5 pF | 60V | N-Channel | 60pF @ 25V | 2.5 V | 5 Ω @ 500mA, 10V | 2.5V @ 1mA | 150mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RTR030N05TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohm-rtr030n05tl-datasheets-4591.pdf | SC-96 | 2.9mm | 900μm | 1.6mm | Lead Free | 3 | 21 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 12 ns | 19ns | 26 ns | 34 ns | 3A | 12V | SILICON | SWITCHING | 1W Ta | 3A | 0.095Ohm | 45V | N-Channel | 510pF @ 10V | 67m Ω @ 3A, 4.5V | 1.5V @ 1mA | 3A Ta | 6.2nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| STT4P3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ H6 | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stt4p3llh6-datasheets-7236.pdf | SOT-23-6 | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | STT4P | NOT SPECIFIED | Other Transistors | 4A | Single | 30V | 1.6W Ta | 4A | P-Channel | 639pF @ 25V | 56m Ω @ 2A, 10V | 2.5V @ 250μA | 4A Ta | 6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8726TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irlr8726trpbf-datasheets-7098.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 75W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 49ns | 16 ns | 15 ns | 86A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75W Tc | TO-252AA | 0.058Ohm | 30V | N-Channel | 2150pF @ 15V | 5.8m Ω @ 25A, 10V | 2.35V @ 50μA | 86A Tc | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD16301Q2 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-SMD, Flat Leads | 2mm | 800μm | 2mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 3 days ago) | yes | 750μm | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | CSD16301 | 6 | 1 | Single | 2.3W | 1 | FET General Purpose Power | 150°C | 2.7 ns | 4.4ns | 1.7 ns | 4.1 ns | 5A | 10V | SILICON | DRAIN | SWITCHING | 1.2V | 2.3W Ta | 5A | 20A | 0.034Ohm | 25V | N-Channel | 340pF @ 12.5V | 1.2 V | 24m Ω @ 4A, 8V | 1.55V @ 250μA | 5A Tc | 2.8nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||||||
| SI1022R-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1022rt1ge3-datasheets-7035.pdf | SC-75A | 1.58mm | 700μm | 760μm | Lead Free | 3 | 14 Weeks | No SVHC | 3Ohm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 3 | 1 | Single | 250mW | 1 | 330mA | 20V | SILICON | SWITCHING | 60V | 60V | 2.5V | 250mW Ta | N-Channel | 30pF @ 25V | 1.25 Ω @ 500mA, 10V | 2.5V @ 250μA | 330mA Ta | 0.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTR5103NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntr5103nt1g-datasheets-2556.pdf | TO-236-3, SC-59, SOT-23-3 | 1.11mm | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | DUAL | GULL WING | 1 | 300mW | 1 | FET General Purpose Power | 150°C | 1.7 ns | 1.2ns | 3.6 ns | 4.8 ns | 260mA | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300mW Ta | 0.26A | 60V | N-Channel | 40pF @ 25V | 2.5 Ω @ 240mA, 10V | 2.6V @ 250μA | 260mA Ta | 0.81nC @ 5V | 4.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3080ALGC11 | ROHM Semiconductor | $9.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | Lead Free | 3 | 21 Weeks | yes | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON CARBIDE | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 134W Tc | 30A | 75A | 0.104Ohm | N-Channel | 571pF @ 500V | 104m Ω @ 10A, 18V | 5.6V @ 5mA | 30A Tc | 48nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW15NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw15nk90z-datasheets-2846.pdf | 1kV | 13A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 400mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Matte Tin (Sn) - annealed | STW15N | 3 | Single | 350W | 1 | FET General Purpose Power | 42 ns | 27ns | 35 ns | 135 ns | 7.5A | 30V | SILICON | SWITCHING | 3.75V | 350W Tc | TO-247AC | 60A | 900V | N-Channel | 6100pF @ 25V | 550m Ω @ 7.5A, 10V | 4.5V @ 150μA | 15A Tc | 256nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| NX7002AK,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-nx7002ak215-datasheets-2382.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | 1 | Single | 1 | 6 ns | 7ns | 14 ns | 20 ns | 190mA | 1.6V | 60V | SILICON | SWITCHING | 265mW Ta 1.33W Tc | 5.2Ohm | N-Channel | 17pF @ 10V | 4.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 190mA Ta | 0.43nC @ 4.5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002ET1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-2n7002et1g-datasheets-2562.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 940μm | 1.3mm | Lead Free | 3 | 4 Weeks | No SVHC | 2.5Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 300mW | 1 | FET General Purpose Power | 1.7 ns | 1.2ns | 1.2 ns | 4.8 ns | 310mA | 20V | SILICON | SWITCHING | 1V | 300mW Tj | 0.26A | 60V | N-Channel | 26.7pF @ 25V | 1 V | 2.5 Ω @ 240mA, 10V | 2.5V @ 250μA | 260mA Ta | 0.81nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SCT2080KEC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-247-3 | 15.9mm | 5.03mm | 20.95mm | Lead Free | 3 | 19 Weeks | Unknown | 117mOhm | 3 | On/Off | No | Single | 1 | 2A | 35 ns | 36ns | 22 ns | 76 ns | 35A | 22V | SWITCHING | 1200V | 1 | 4V | High Side | 262W Tc | 40A | 80A | N-Channel | 2080pF @ 800V | 4 V | 117m Ω @ 10A, 18V | 4V @ 4.4mA | 40A Tc | 106nC @ 18V | 18V | +22V, -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN160N30T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn160n30t-datasheets-3324.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 300V | 300V | 900W Tc | 440A | 0.019Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 19m Ω @ 60A, 10V | 5V @ 8mA | 130A Tc | 335nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN67D8LW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn67d8lw13-datasheets-2479.pdf | SC-70, SOT-323 | 14 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 240mA | 60V | 320mW Ta | N-Channel | 22pF @ 25V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 240mA Ta | 0.82nC @ 10V | 5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RZM001P02T2L | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/rohmsemiconductor-rzm001p02t2l-datasheets-2622.pdf | SOT-723 | 550μm | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 150W | 1 | Other Transistors | 150°C | R-PDSO-F3 | 46 ns | 325 ns | 100mA | 10V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 20V | 150mW Ta | -20V | P-Channel | 15pF @ 10V | 3.8 Ω @ 100mA, 4.5V | 1V @ 100μA | 100mA Ta | 1.2V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R045CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r045cpfksa1-datasheets-2659.pdf | 600V | 60A | TO-247-3 | 25.549mm | Lead Free | 3 | 49 Weeks | 3 | yes | No | e3 | Tin (Sn) | SINGLE | 3 | 1 | 431W | 1 | 30 ns | 20ns | 10 ns | 100 ns | 60A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 2.5V | 431W Tc | 0.045Ohm | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 60A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N65X2 | IXYS | $23.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfx120n65x2-datasheets-2667.pdf | TO-247-3 | 19 Weeks | unknown | 120A | 650V | 1250W Tc | N-Channel | 15500pF @ 25V | 24m Ω @ 60A, 10V | 5.5V @ 8mA | 120A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR140N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr140n20p-datasheets-2682.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | No SVHC | 22MOhm | 247 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | R-PSIP-T3 | 2.5kV | 35ns | 90 ns | 150 ns | 90A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 280A | 4000 mJ | 200V | N-Channel | 7500pF @ 25V | 22m Ω @ 45A, 10V | 5V @ 4mA | 90A Tc | 240nC @ 10V | 10V | ±20V |
