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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD19538Q2 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 16 Weeks | 6 | ACTIVE (Last Updated: 4 days ago) | yes | 750μm | EAR99 | AVALANCHE RATED | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | CSD19538 | Single | 1 | 14.4A | SILICON | DRAIN | SWITCHING | 100V | 100V | 2.5W Ta 20.2W Tc | 34.4A | 0.072Ohm | 8 mJ | N-Channel | 454pF @ 50V | 59m Ω @ 5A, 10V | 3.8V @ 250μA | 14.4A Ta | 5.6nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI2323DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2323dst1e3-datasheets-7974.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 15 Weeks | 1.437803g | Unknown | 39mOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 25 ns | 43ns | 43 ns | 71 ns | -4.7A | 8V | SILICON | SWITCHING | 20V | -1V | 750mW Ta | -20V | P-Channel | 1020pF @ 10V | -1 V | 39m Ω @ 4.7A, 4.5V | 1V @ 250μA | 3.7A Ta | 19nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| DMT6016LPS-13 | Diodes Incorporated | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmt6016lps13-datasheets-7936.pdf | 8-PowerTDFN | Lead Free | 5 | 22 Weeks | 95.991485mg | 16mOhm | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 1 | Single | 30 | 1 | R-PDSO-F5 | 3.4 ns | 5.2ns | 7 ns | 13 ns | 10.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.23W Ta | 32A | 60A | N-Channel | 864pF @ 30V | 16m Ω @ 10A, 10V | 2.5V @ 250μA | 10.6A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMP4025SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4025sfg13-datasheets-7826.pdf | 8-PowerVDFN | 16 Weeks | 72.007789mg | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | 1.95W | Other Transistors | 6.9 ns | 14.7ns | 30.9 ns | 53.7 ns | 7.2A | 20V | Single | 40V | 810mW Ta | -40V | P-Channel | 1643pF @ 20V | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 4.65A Ta | 33.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6236 | Alpha & Omega Semiconductor Inc. | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | Lead Free | 16 Weeks | 8 | 39W | 1 | 30A | 20V | 40V | 4.2W Ta 39W Tc | N-Channel | 1225pF @ 20V | 7m Ω @ 20A, 10V | 2.4V @ 250μA | 19A Ta 30A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS192PH6327FTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-bss192ph6327ftsa1-datasheets-7686.pdf | TO-243AA | 4.5mm | 1.5mm | 2.5mm | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1W | 1 | 4.7 ns | 5.2ns | 50 ns | 72 ns | 190mA | 20V | -250V | SILICON | DRAIN | 250V | 1W Ta | 8 pF | -250V | P-Channel | 104pF @ 25V | 12 Ω @ 190mA, 10V | 2V @ 130μA | 190mA Ta | 6.1nC @ 10V | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIA400EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia400edjt1ge3-datasheets-7705.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 3.5W | 1 | FET General Purpose Powers | S-PDSO-N3 | 12A | 12V | SILICON | DRAIN | SWITCHING | 19.2W Tc | 30A | 30V | N-Channel | 1265pF @ 15V | 19m Ω @ 11A, 4.5V | 1.5V @ 250μA | 12A Tc | 36nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTD5867NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntd5867nlt4g-datasheets-7716.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 39MOhm | 4 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | YES | GULL WING | 4 | Single | 36W | 1 | R-PSSO-G2 | 6.5 ns | 12.6ns | 2.4 ns | 18.2 ns | 20A | 20V | SILICON | DRAIN | 1.8V | 36W Tc | 76A | 60V | N-Channel | 675pF @ 25V | 20.6ns | 1.8 V | 39m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| DMN6040SVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn6040svt7-datasheets-7759.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 900μm | 1.6mm | Lead Free | 6 | 17 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.8W | 1 | FET General Purpose Power | 6.6 ns | 8.1ns | 4 ns | 20.1 ns | 5A | 20V | SILICON | SWITCHING | 1.2W Ta | 4.3A | 0.044Ohm | 60V | N-Channel | 1287pF @ 25V | 44m Ω @ 4.3A, 10V | 3V @ 250μA | 5A Ta | 22.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDN359AN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdn359an-datasheets-4730.pdf | 30V | 2.7A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.12mm | 3.05mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 46mOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 500mW | 1 | FET General Purpose Power | 150°C | 6 ns | 13ns | 13 ns | 15 ns | 2.7A | 20V | 30V | SILICON | SWITCHING | 1.6V | 500mW Ta | 30V | N-Channel | 480pF @ 10V | 1.6 V | 46m Ω @ 2.7A, 10V | 3V @ 250μA | 2.7A Ta | 7nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IRL6342TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irl6342trpbf-datasheets-7675.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 15 Weeks | No SVHC | 14.6MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 6 ns | 12ns | 14 ns | 33 ns | 9.9A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1V | 2.5W Ta | 79A | 30V | N-Channel | 1025pF @ 25V | 1.1 V | 14.6m Ω @ 9.9A, 4.5V | 1.1V @ 10μA | 9.9A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRF5803TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf5803trpbf-datasheets-7426.pdf | -40V | -3.4A | SOT-23-6 Thin, TSOT-23-6 | 3.1mm | 1.45mm | 1.4986mm | Contains Lead | 12 Weeks | No SVHC | 112MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | 2W | Other Transistors | 150°C | 43 ns | 550ns | 50 ns | 88 ns | -3.4A | 20V | Single | 40V | -3V | 2W Ta | -40V | P-Channel | 1110pF @ 25V | 112m Ω @ 3.4A, 10V | 3V @ 250μA | 3.4A Ta | 37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI2307BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2307bdst1e3-datasheets-7112.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 78mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 9 ns | 12ns | 12 ns | 25 ns | -2.5A | 20V | SILICON | 30V | -3V | 750mW Ta | -30V | P-Channel | 380pF @ 15V | -3 V | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 2.5A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| FDMA908PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdma908pz-datasheets-7840.pdf | 6-WDFN Exposed Pad | 2.05mm | 850μm | 2.05mm | Lead Free | 6 | 16 Weeks | 30mg | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | e4 | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.4W | 1 | Other Transistors | 150°C | 11 ns | 12ns | 71 ns | 131 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 12V | -600mV | 2.4W Ta | 903 pF | -12V | P-Channel | 3957pF @ 6V | 12.5m Ω @ 12A, 4.5V | 1V @ 250μA | 12A Ta | 34nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| BUK9Y58-75B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk9y5875b115-datasheets-7845.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 1 | 15 ns | 16ns | 9 ns | 30 ns | 20.73A | 15V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60.4W Tc | MO-235 | 82.9A | 0.061Ohm | N-Channel | 1137pF @ 25V | 53m Ω @ 10A, 10V | 2.15V @ 1mA | 20.73A Tc | 10.7nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| SQ2337ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2337est1ge3-datasheets-7871.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 3 | 3W | 1 | SOT-23-3 (TO-236) | 2.2A | 20V | 80V | 3W Tc | P-Channel | 620pF @ 30V | 290mOhm @ 1A, 4.5V | 2.5V @ 250μA | 2.2A Tc | 18nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2319ADS-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sq2319adst1ge3-datasheets-7856.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.5W Tc | P-Channel | 620pF @ 20V | 75m Ω @ 3A, 10V | 2.5V @ 250μA | 4.6A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E120ATTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-PowerVDFN | 5 | 20 Weeks | 8 | EAR99 | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta | 0.0113Ohm | P-Channel | 3200pF @ 15V | 8m Ω @ 12A, 10V | 2.5V @ 1mA | 12A Ta | 62nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FQT7N10LTF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fqt7n10ltf-datasheets-7231.pdf&product=onsemiconductor-fqt7n10ltf-6382714 | 100V | 1.7A | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.56mm | Lead Free | 4 | 18 Weeks | 188mg | No SVHC | 350mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 2W | 1 | FET General Purpose Power | 150°C | R-PDSO-G4 | 9 ns | 100ns | 50 ns | 17 ns | 1.7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2W Tc | 6.8A | 50 mJ | 100V | N-Channel | 290pF @ 25V | 350m Ω @ 850mA, 10V | 2V @ 250μA | 1.7A Tc | 6nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||
| STQ1HNK60R-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1hnk60rap-datasheets-7505.pdf&product=stmicroelectronics-stq1hnk60rap-6382718 | TO-226-3, TO-92-3 (TO-226AA) | 4.95mm | 4.95mm | 3.94mm | 3 | 8 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | STQ1 | 3 | Single | 3W | 1 | FET General Purpose Power | 6.5 ns | 5ns | 25 ns | 19 ns | 500mA | 30V | SILICON | SWITCHING | 600V | 600V | 3V | 3W Tc | 0.4A | 25 mJ | N-Channel | 156pF @ 25V | 8.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 400mA Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| ZVP1320FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp1320fta-datasheets-7297.pdf | -200V | -35mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 80Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 350mW | 1 | Other Transistors | 8 ns | 8ns | 8 ns | 8 ns | 35mA | 20V | SILICON | 200V | -1.5V | 350mW Ta | 5 pF | -200V | P-Channel | 50pF @ 25V | 80 Ω @ 50mA, 10V | 3.5V @ 1mA | 35mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| CSD25310Q2 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 8 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 1 day ago) | yes | 750μm | EAR99 | Tin | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | CSD25310 | Single | NOT SPECIFIED | 2.9W | 1 | 8 ns | 15ns | 5 ns | 15 ns | 20A | 8V | SILICON | SOURCE | SWITCHING | 20V | 20V | -850mV | 2.9W Ta | 48A | 0.089Ohm | P-Channel | 655pF @ 10V | 23.9m Ω @ 5A, 4.5V | 1.1V @ 250μA | 20A Ta | 4.7nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| DMT6016LFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmt6016lfdf7-datasheets-7534.pdf | 6-UDFN Exposed Pad | 6 | 22 Weeks | 16mOhm | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N6 | 3.4 ns | 5.2ns | 6.8 ns | 12.9 ns | 8.9A | 20V | SILICON | DRAIN | SWITCHING | 820mW Ta | 60V | N-Channel | 864pF @ 30V | 16m Ω @ 10A, 10V | 3V @ 250μA | 8.9A Ta | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NDT2955 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-ndt2955-datasheets-7510.pdf | -60V | -2.5A | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.56mm | Lead Free | 4 | 8 Weeks | 250.2mg | No SVHC | 300MOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 3W | 1 | Other Transistors | 150°C | 12 ns | 10ns | 6 ns | 19 ns | 2.5A | 20V | 60V | SILICON | DRAIN | SWITCHING | 2.6V | 3W Ta | -60V | P-Channel | 601pF @ 30V | -2.6 V | 300m Ω @ 2.5A, 10V | 4V @ 250μA | 2.5A Ta | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| AON7524 | Alpha & Omega Semiconductor Inc. | $4.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerVDFN | 18 Weeks | FET General Purpose Power | 28A | Single | 30V | 3.1W Ta 32W Tc | N-Channel | 2250pF @ 15V | 3.3m Ω @ 20A, 10V | 1.2V @ 250μA | 25A Ta 28A Tc | 50nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN2A14FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-zxmn2a14fta-datasheets-7502.pdf | 20V | 3.3A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 60mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 4 ns | 5.3ns | 9.5 ns | 16.6 ns | 4.1A | 12V | SILICON | SWITCHING | 1W Ta | 20V | N-Channel | 544pF @ 10V | 60m Ω @ 3.4A, 4.5V | 700mV @ 250μA | 3.4A Ta | 6.6nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| DMN6068SE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn6068se13-datasheets-7468.pdf | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 16 Weeks | 7.994566mg | No SVHC | 68mOhm | no | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | FET General Purpose Powers | R-PDSO-G4 | 3.6 ns | 10.8ns | 8.7 ns | 11.9 ns | 5.6A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 20.8A | 37.5 mJ | 60V | N-Channel | 502pF @ 30V | 68m Ω @ 12A, 10V | 3V @ 250μA | 4.1A Ta | 10.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| ZXMP6A17E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmp6a17e6ta-datasheets-7480.pdf | -60V | -3A | SOT-23-6 | 3.1mm | 1.4mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 125mOhm | 6 | yes | EAR99 | LOW THRESHOLD, HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.1W | 1 | Other Transistors | 150°C | 2.6 ns | 3.4ns | 3.4 ns | 26.2 ns | -2.3A | 20V | SILICON | SWITCHING | 60V | -3V | 1.1W Ta | 3A | -60V | P-Channel | 637pF @ 30V | 125m Ω @ 2.3A, 10V | 1V @ 250μA | 2.3A Ta | 17.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| FDC5614P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdc5614p-datasheets-7661.pdf | -60V | -3A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 900μm | 1.7mm | Lead Free | 6 | 5 Weeks | No SVHC | 105MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 2A | e3 | 60V | DUAL | GULL WING | 1 | Single | 1.6W | 1 | Other Transistors | 150°C | 7 ns | 10ns | 10 ns | 19 ns | 3A | 20V | SILICON | SWITCHING | -1.6V | 1.6W Ta | -60V | P-Channel | 759pF @ 30V | -1.6 V | 105m Ω @ 3A, 10V | 3V @ 250μA | 3A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| MTM231232LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SC-70, SOT-323 | 2mm | 800μm | 1.25mm | 3 | 13 Weeks | 6.208546mg | 3 | EAR99 | Tin | unknown | DUAL | GULL WING | NOT SPECIFIED | MTM231232 | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | 25 ns | 25ns | 70 ns | 120 ns | -3A | 10V | SILICON | SWITCHING | 20V | 20V | 500mW Ta | 3A | 0.055Ohm | P-Channel | 1000pF @ 10V | 55m Ω @ 1A, 4V | 1.3V @ 1mA | 3A Ta | 2.5V 4.5V | ±10V |
