Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRLL024NTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll024ntrpbf-datasheets-9763.pdf | 55V | 3.1A | TO-261-4, TO-261AA | 6.6802mm | 1.8mm | 3.7mm | Contains Lead, Lead Free | 4 | 12 Weeks | No SVHC | 65mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | IRLL024NTRPBF | DUAL | GULL WING | 1 | Single | 2.1W | 1 | 150°C | R-PDSO-G4 | 7.4 ns | 21ns | 25 ns | 18 ns | 3.1A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 1W Ta | 58 ns | 55V | N-Channel | 510pF @ 25V | 2 V | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 3.1A Ta | 15.6nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
IPD30N03S4L09ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd30n03s4l09atma1-datasheets-9783.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 12 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 3 ns | 1ns | 5 ns | 12 ns | 30A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W Tc | 120A | 0.009Ohm | 28 mJ | N-Channel | 1520pF @ 15V | 9m Ω @ 30A, 10V | 2.2V @ 13μA | 30A Tc | 20nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFL9014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfl9014trpbf-datasheets-9739.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 8 Weeks | 250.212891mg | Unknown | 500mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | Other Transistors | 150°C | 11 ns | 63ns | 31 ns | 9.6 ns | -1.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | -2V | 2W Ta 3.1W Tc | -60V | P-Channel | 270pF @ 25V | 500m Ω @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SI9433BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si9433bdyt1e3-datasheets-9829.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 40 ns | 55ns | 55 ns | 65 ns | -6.2A | 12V | SILICON | 20V | -600mV | 1.3W Ta | 4.5A | -20V | P-Channel | 40m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
DMP4015SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp4015sss13-datasheets-9635.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1 | Other Transistors | 13.2 ns | 10ns | 137.9 ns | 302.7 ns | 9.1A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 1.45W Ta | -40V | P-Channel | 4234pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 9.1A Ta | 47.5nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
ZXMN6A11ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a11zta-datasheets-9443.pdf | 60V | 2.8A | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 17 Weeks | 130.492855mg | No SVHC | 120mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | FLAT | 260 | 3 | 1 | Single | 30 | 2.6W | 1 | FET General Purpose Power | 1.95 ns | 3.5ns | 4.6 ns | 8.2 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 2.4A | 60V | N-Channel | 330pF @ 40V | 120m Ω @ 2.5A, 10V | 1V @ 250μA | 2.7A Ta | 5.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFR120NTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr120ntrpbf-datasheets-8685.pdf | 100V | 9.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 12 Weeks | No SVHC | 210mOhm | 3 | Tin | No | 1 | Single | 39W | 1 | 175°C | D-Pak | 330pF | 4.5 ns | 23ns | 23 ns | 32 ns | 9.4A | 20V | 100V | 100V | 4V | 48W Tc | 150 ns | 210mOhm | 100V | N-Channel | 330pF @ 25V | 4 V | 210mOhm @ 5.6A, 10V | 4V @ 250μA | 9.4A Tc | 25nC @ 10V | 210 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFL4315TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfl4315trpbf-datasheets-9263.pdf | 150V | 2.6A | TO-261-4, TO-261AA | 6.6802mm | 1.8mm | 3.7mm | Contains Lead, Lead Free | 4 | 12 Weeks | No SVHC | 185Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.8W | 1 | FET General Purpose Power | 150°C | R-PDSO-G4 | 8.4 ns | 21ns | 19 ns | 20 ns | 2.6A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5V | 2.8W Ta | 150V | N-Channel | 420pF @ 25V | 5 V | 185m Ω @ 1.6A, 10V | 5V @ 250μA | 2.6A Ta | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
FDD1600N10ALZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdd1600n10alz-datasheets-9319.pdf&product=onsemiconductor-fdd1600n10alz-6383039 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 14.9W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 14ns | 14 ns | 13 ns | 6.8A | 20V | SILICON | DRAIN | SWITCHING | 14.9W Tc | TO-252AA | 5.08 mJ | 100V | N-Channel | 225pF @ 50V | 160m Ω @ 3.4A, 10V | 2.8V @ 250μA | 6.8A Tc | 3.61nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
AO4485 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 18 Weeks | 8 | No | 1.7W | 1 | 10A | 20V | 40V | 1.7W Ta | P-Channel | 3000pF @ 20V | 15m Ω @ 10A, 10V | 2.5V @ 250μA | 10A Ta | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SISA14DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sisa14dnt1ge3-datasheets-8389.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 5.1mOhm | yes | EAR99 | DUAL | C BEND | 240 | 40 | 1 | S-PDSO-C5 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.57W Ta 26.5W Tc | 80A | 11.25 mJ | N-Channel | 1450pF @ 15V | 5.1m Ω @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STD17NF03LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std17nf03lt4-datasheets-9402.pdf | 30V | 17A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 50mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD17 | 3 | Single | 30 | 30W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 100ns | 22 ns | 25 ns | 17A | 16V | SILICON | DRAIN | SWITCHING | 1.5V | 30W Tc | TO-252AA | 68A | 200 mJ | 30V | N-Channel | 320pF @ 25V | 50m Ω @ 8.5A, 10V | 2.2V @ 250μA | 17A Tc | 6.5nC @ 5V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
BSZ086P03NS3EGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsz086p03ns3egatma1-datasheets-9299.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 18 Weeks | No SVHC | 8 | no | EAR99 | ESD PROTECTED | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 69W | 1 | Not Qualified | S-PDSO-N5 | 16 ns | 46ns | 8 ns | 35 ns | 13.5A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -2.5V | 2.1W Ta 69W Tc | -30V | P-Channel | 4785pF @ 15V | 8.6m Ω @ 20A, 10V | 3.1V @ 105μA | 13.5A Ta 40A Tc | 57.5nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
ZXMP6A13GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmp6a13gta-datasheets-9294.pdf | -60V | -2.3A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 390mOhm | 4 | no | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 4 | 1 | Single | 30 | 3.9W | 1 | Other Transistors | 1.6 ns | 2.2ns | 5.7 ns | 11.2 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1V | 2W Ta | 7.8A | -60V | P-Channel | 219pF @ 30V | 390m Ω @ 900mA, 10V | 1V @ 250μA | 1.7A Ta | 5.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SIB452DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sib452dkt1ge3-datasheets-9461.pdf | PowerPAK® SC-75-6L | 1.6mm | 750μm | 1.6mm | Lead Free | 6 | 14 Weeks | 95.991485mg | Unknown | 2.4Ohm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 6 | 1 | 40 | 2.4W | 1 | FET General Purpose Power | 12 ns | 16ns | 15 ns | 30 ns | 1.5A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5V | 2.4W Ta 13W Tc | 190V | N-Channel | 135pF @ 50V | 2.4 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 1.5A Tc | 6.5nC @ 10V | 1.8V 4.5V | ±16V | ||||||||||||||||||||||||||||||||||||||||
AOD4130 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | No | 52W | 1 | FET General Purpose Power | 30A | 20V | Single | 60V | 2.5W Ta 52W Tc | N-Channel | 1900pF @ 30V | 24m Ω @ 20A, 10V | 2.8V @ 250μA | 6.5A Ta 30A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQD2N60CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd2n60ctm-datasheets-9518.pdf | 600V | 1.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | 18A | e3 | 650V | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 25ns | 28 ns | 24 ns | 1.9A | 30V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 44W Tc | 600V | N-Channel | 235pF @ 25V | 4.7 Ω @ 950mA, 10V | 4V @ 250μA | 1.9A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
FDS6670A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fds6670a-datasheets-9414.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 8MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 15 ns | 13ns | 13 ns | 40 ns | 13A | 20V | 30V | SILICON | SWITCHING | 1.8V | 2.5W Ta | 30V | N-Channel | 2220pF @ 15V | 1.8 V | 8m Ω @ 13A, 10V | 3V @ 250μA | 13A Ta | 30nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
DMP6023LE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp6023le13-datasheets-9248.pdf | TO-261-4, TO-261AA | 2.569nF | 6.5mm | 1.8mm | 3.5mm | 4 | 22 Weeks | 188.014037mg | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 1 | Single | 30 | 1 | 150°C | R-PDSO-G4 | 6 ns | 7.1ns | 62 ns | 110 ns | 18.2A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2W Ta | 7A | 50A | 0.028Ohm | 62.9 mJ | -60V | P-Channel | 2569pF @ 30V | 28m Ω @ 5A, 10V | 3V @ 250μA | 7A Ta 18.2A Tc | 53.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
PSMN012-60YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn01260ys115-datasheets-9253.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | 59A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 89W Tc | MO-235 | 236A | 0.0111Ohm | 71 mJ | N-Channel | 1685pF @ 30V | 11.1m Ω @ 15A, 10V | 4V @ 1mA | 59A Tc | 28.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMC4435BZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc4435bz-datasheets-9272.pdf | 8-PowerWDFN | 3.3mm | 800μm | 3.3mm | Lead Free | 5 | 23 Weeks | 200mg | No SVHC | 20MOhm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | Gold | No | e4 | DUAL | 1 | Single | 2.3W | 1 | Other Transistors | 150°C | S-PDSO-N5 | 10 ns | 6ns | 20 ns | 35 ns | -8.5A | 25V | SILICON | DRAIN | SWITCHING | 30V | -1.9V | 2.3W Ta 31W Tc | 50A | 24 mJ | -30V | P-Channel | 2045pF @ 15V | -1.9 V | 20m Ω @ 8.5A, 10V | 3V @ 250μA | 8.5A Ta 18A Tc | 46nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
AO4421 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 8 | 18 Weeks | 8 | yes | EAR99 | No | DUAL | GULL WING | 8 | 3.1W | 1 | 6.2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 3.1W Ta | 0.04Ohm | P-Channel | 2900pF @ 30V | 40m Ω @ 6.2A, 10V | 3V @ 250μA | 6.2A Ta | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK9275-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9275100a118-datasheets-9077.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 88W | 1 | R-PSSO-G2 | 13 ns | 120ns | 57 ns | 58 ns | 21.7A | 10V | 100V | SILICON | DRAIN | SWITCHING | 88W Tc | 87A | 0.084Ohm | 100V | N-Channel | 1690pF @ 25V | 72m Ω @ 10A, 10V | 2V @ 1mA | 21.7A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
SI3493BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | -8A | 8V | SILICON | SWITCHING | 20V | -400mV | 2.08W Ta 2.97W Tc | 8A | 25A | -20V | P-Channel | 1805pF @ 10V | -900 mV | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
BSZ060NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz060ne2lsatma1-datasheets-8449.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | S-PDSO-N3 | 2.5 ns | 2.2ns | 1.8 ns | 11 ns | 12A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.1W Ta 26W Tc | N-Channel | 670pF @ 12V | 6m Ω @ 20A, 10V | 2V @ 250μA | 12A Ta 40A Tc | 9.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
ZXMP3A17E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp3a17e6ta-datasheets-8581.pdf | -30V | -4A | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 70mOhm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 1.1W | 1 | 1.74 ns | 2.87ns | 2.87 ns | 29.2 ns | 4A | 20V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1V | 1.1W Ta | 3.2A | P-Channel | 630pF @ 15V | -800 mV | 70m Ω @ 3.2A, 10V | 1V @ 250μA | 3.2A Ta | 15.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
FDT86244 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdt86244-datasheets-8743.pdf | TO-261-4, TO-261AA | 3.7mm | 1.7mm | 6.7mm | Lead Free | 4 | 9 Weeks | 250.2mg | No SVHC | 4 | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.2W | 1 | FET General Purpose Power | 5.3 ns | 1.3ns | 2.4 ns | 9.8 ns | 2.8A | 20V | SILICON | DRAIN | SWITCHING | 3.1V | 2.2W Ta | 5 pF | 150V | N-Channel | 395pF @ 75V | 3.1 V | 128m Ω @ 2.8A, 10V | 4V @ 250μA | 2.8A Tc | 7nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
FDMA530PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | -30V | -6.8A | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 35MOhm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | Single | 30 | 2.4W | 1 | Other Transistors | Not Qualified | 6 ns | 21ns | 31 ns | 43 ns | -6.8A | 25V | -30V | SILICON | 30V | -2.1V | 2.4W Ta | 24A | -30V | P-Channel | 1070pF @ 15V | 25 V | 35m Ω @ 6.8A, 10V | 3V @ 250μA | 6.8A Ta | 24nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
BSC054N04NSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc054n04nsgatma1-datasheets-9213.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 57W | 1 | Not Qualified | R-PDSO-F5 | 2.6ns | 17A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 57W Tc | 324A | 0.0054Ohm | 35 mJ | N-Channel | 2800pF @ 20V | 5.4m Ω @ 50A, 10V | 4V @ 27μA | 17A Ta 81A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
NDT3055L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-ndt3055l-datasheets-5128.pdf | 60V | 3.5A | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 6.7mm | Lead Free | 4 | 8 Weeks | No SVHC | 100mOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 32A | e3 | 40V | DUAL | GULL WING | Single | 3W | 1 | FET General Purpose Power | 5 ns | 7.5ns | 7 ns | 20 ns | 4A | 20V | 60V | SILICON | DRAIN | SWITCHING | 1.6V | 3W Ta | 60V | N-Channel | 345pF @ 25V | 1.6 V | 100m Ω @ 4A, 10V | 2V @ 250μA | 4A Ta | 20nC @ 10V | 4.5V 10V | ±20V |
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