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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6644TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6644trpbf-datasheets-0636.pdf | 100V | 10.3A | DirectFET™ Isometric MN | 6.35mm | 508μm | 5.0546mm | Lead Free | 3 | 12 Weeks | No SVHC | 5 | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 89W | 1 | R-XBCC-N3 | 17 ns | 26ns | 16 ns | 34 ns | 8.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 4.8V | 2.8W Ta 89W Tc | 228A | 86 mJ | 100V | N-Channel | 2210pF @ 25V | 4.8 V | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | 10.3A Ta 60A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTB45N06LT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntb45n06lt4g-datasheets-0452.pdf | 60V | 45A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 2 Weeks | 26MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 3 | Single | 125W | 1 | FET General Purpose Powers | R-PSSO-G2 | 13 ns | 341ns | 158 ns | 36 ns | 45A | 15V | SILICON | DRAIN | SWITCHING | 2.4W Ta 125W Tj | 240 mJ | 60V | N-Channel | 1700pF @ 25V | 28m Ω @ 22.5A, 5V | 2V @ 250μA | 45A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||
| IRFD210PBF | Vishay Siliconix | $1.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd210pbf-datasheets-0562.pdf | 200V | 600mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 1.5Ohm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1 | Single | 1W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 4V | 1W Ta | 0.6A | 200V | N-Channel | 140pF @ 25V | 1.5 Ω @ 360mA, 10V | 4V @ 250μA | 600mA Ta | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7116DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7116dnt1e3-datasheets-0566.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 7.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 15ns | 15 ns | 36 ns | 16.4A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.5V | 1.5W Ta | 60A | N-Channel | 7.8m Ω @ 16.4A, 10V | 2.5V @ 250μA | 10.5A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF6614TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6614trpbf-datasheets-0575.pdf | 40V | 12.7A | DirectFET™ Isometric ST | 4.826mm | 506μm | 3.95mm | Lead Free | 3 | 12 Weeks | No SVHC | 8.3MOhm | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 42W | 1 | R-XBCC-N3 | 13 ns | 27ns | 3.6 ns | 18 ns | 10.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.1W Ta 42W Tc | 22 mJ | 40V | N-Channel | 2560pF @ 20V | 8.3m Ω @ 12.7A, 10V | 2.25V @ 250μA | 12.7A Ta 55A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDMC86520DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc86520dc-datasheets-0593.pdf | 8-PowerTDFN | 3.3mm | 950μm | 3.3mm | Lead Free | 5 | 13 Weeks | 32.13mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 73W | 1 | FET General Purpose Power | S-PDSO-N5 | 18 ns | 6.6ns | 4 ns | 19 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta 73W Tc | MO-240BA | 0.0063Ohm | 60V | N-Channel | 2790pF @ 30V | 6.3m Ω @ 17A, 10V | 4.5V @ 250μA | 17A Ta 40A Tc | 40nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMS86104 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms86104-datasheets-0524.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 16A | e3 | Tin (Sn) | 100V | DUAL | FLAT | Single | 73W | 1 | FET General Purpose Power | R-PDSO-F5 | 8 ns | 3.5ns | 3.2 ns | 14.3 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.9V | 2.5W Ta 73W Tc | MO-240AA | 0.024Ohm | 96 mJ | 100V | N-Channel | 923pF @ 50V | 24m Ω @ 7A, 10V | 4V @ 250μA | 7A Ta 16A Tc | 16nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| BSC160N15NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc160n15ns5atma1-datasheets-0607.pdf | 8-PowerTDFN | 1.1mm | 5 | 26 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 96W | 1 | 150°C | R-PDSO-F5 | 9.6 ns | 10.8 ns | 56A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 96W Tc | 224A | 43 mJ | 150V | N-Channel | 1820pF @ 75V | 16m Ω @ 28A, 10V | 4.6V @ 60μA | 56A Tc | 23.1nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AON6278 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon6278-datasheets-5511.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | 104W | 1 | FET General Purpose Power | 85A | 20V | Single | 80V | 7.4W Ta 208W Tc | N-Channel | 4646pF @ 40V | 3.3m Ω @ 20A, 10V | 3.3V @ 250μA | 34A Ta 85A Tc | 86nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7812DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 3.8W Ta 52W Tc | 7.2A | 25A | 0.037Ohm | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FDMC86240 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdmc86240-datasheets-0656.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 10 Weeks | 165.33333mg | No SVHC | 70MOhm | 8 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | Gold, Silver | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 40W | 1 | FET General Purpose Power | S-PDSO-N5 | 8.2 ns | 1.7ns | 3.1 ns | 14 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.9V | 2.3W Ta 40W Tc | 4.6A | 20A | 34 mJ | 150V | N-Channel | 905pF @ 75V | 51m Ω @ 4.6A, 10V | 4V @ 250μA | 4.6A Ta 16A Tc | 15nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPD053N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd053n08n3gatma1-datasheets-0586.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 150W | 1 | R-PSSO-G2 | 18 ns | 66ns | 10 ns | 38 ns | 90A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | TO-252AA | 190 mJ | N-Channel | 4750pF @ 40V | 5.3m Ω @ 90A, 10V | 3.5V @ 90μA | 90A Tc | 69nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDT3055 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-ndt3055-datasheets-9721.pdf | 60V | 3.7A | TO-261-4, TO-261AA | 1.8mm | Lead Free | 4 | 8 Weeks | 188mg | No SVHC | 100mOhm | 4 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 3W | 1 | FET General Purpose Power | 150°C | 10 ns | 18ns | 30 ns | 37 ns | 4A | 20V | 60V | SILICON | DRAIN | SWITCHING | 3V | 3W Ta | 4A | 25A | 60V | N-Channel | 250pF @ 30V | 3 V | 100m Ω @ 4A, 10V | 4V @ 250μA | 4A Ta | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| FDMS86200 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86200-datasheets-0388.pdf | 8-PowerTDFN | 5mm | 1.1mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 21MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | 1 | Single | 2.5W | 1 | FET General Purpose Power | 150°C | R-PDSO-F5 | 13 ns | 7.9ns | 5.8 ns | 27 ns | 9.6A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 2.5W Ta 104W Tc | MO-240AA | 52A | 220 mJ | 150V | N-Channel | 2715pF @ 75V | 18m Ω @ 9.6A, 10V | 4V @ 250μA | 9.6A Ta 35A Tc | 46nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||
| FDMS8460 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms8460-datasheets-0380.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 10 Weeks | No SVHC | 2.2MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | 40V | DUAL | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-N5 | 19 ns | 9ns | 7 ns | 48 ns | 25A | 20V | SILICON | SWITCHING | 1.9V | 2.5W Ta 104W Tc | 49A | 40V | N-Channel | 7205pF @ 20V | 2.2m Ω @ 25A, 10V | 3V @ 250μA | 25A Ta 49A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9Z34NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf9z34npbf-datasheets-0518.pdf | -55V | -19A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 100mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | 250 | Single | 30 | 56W | 1 | Other Transistors | 13 ns | 55ns | 41 ns | 30 ns | -19A | 20V | -55V | SILICON | DRAIN | SWITCHING | 55V | -4V | 68W Tc | TO-220AB | 82 ns | 68A | -55V | P-Channel | 620pF @ 25V | -4 V | 100m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| FDMS86310 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86310-datasheets-0547.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 13 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 96W | 1 | FET General Purpose Power | R-PDSO-F5 | 28 ns | 23ns | 9 ns | 35 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 96W Tc | MO-240AA | 50A | 80V | N-Channel | 6290pF @ 40V | 4.8m Ω @ 17A, 10V | 4.5V @ 250μA | 17A Ta 50A Tc | 95nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSC028N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc028n06nsatma1-datasheets-0268.pdf&product=infineontechnologies-bsc028n06nsatma1-6383175 | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 83W | 1 | R-PDSO-F5 | 38ns | 8 ns | 19 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 83W Tc | 23A | 400A | 60V | N-Channel | 2700pF @ 30V | 2.8m Ω @ 50A, 10V | 2.8V @ 50μA | 23A Ta 100A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| EPC2045 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2045-datasheets-0152.pdf | Die | 12 Weeks | Die | 100V | N-Channel | 685pF @ 50V | 7mOhm @ 16A, 5V | 2.5V @ 5mA | 16A Ta | 6.5nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7852DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7852dpt1e3-datasheets-0287.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 16.5mOhm | 8 | yes | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 17 ns | 11ns | 11 ns | 40 ns | 12.5A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 7.6A | 50A | 80V | N-Channel | 2 V | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 7.6A Ta | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||
| SIR662DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir662dpt1ge3-datasheets-0189.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.7mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1V | 6.25W Ta 104W Tc | N-Channel | 4365pF @ 30V | 1 V | 2.7m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 96nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF3710STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf3710strlpbf-datasheets-0132.pdf | 100V | 57A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 23MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 58ns | 47 ns | 45 ns | 57A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | 220 ns | 280 mJ | 100V | N-Channel | 3130pF @ 25V | 4 V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| STP16NF06L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp16nf06l-datasheets-0417.pdf | 60V | 16A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 90mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP16N | 3 | 1 | Single | 45W | 1 | FET General Purpose Power | 10 ns | 37ns | 12.5 ns | 20 ns | 16A | 16V | SILICON | DRAIN | SWITCHING | 1V | 45W Tc | TO-220AB | 64A | 60V | N-Channel | 345pF @ 25V | 90m Ω @ 8A, 10V | 2.5V @ 250μA | 16A Tc | 10nC @ 5V | 10V 5V | ±16V | ||||||||||||||||||||||||||||||||
| FDMC86160 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc86160-datasheets-0445.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 20 Weeks | 152.7mg | No SVHC | 8 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 54W | 1 | FET General Purpose Power | S-PDSO-N5 | 9.7 ns | 3.6ns | 3.4 ns | 16 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 2.9V | 2.3W Ta 54W Tc | MO-240BA | 9A | 50A | 100V | N-Channel | 1290pF @ 50V | 14m Ω @ 9A, 10V | 4V @ 250μA | 9A Ta 43A Tc | 22nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| AON7262E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerVDFN | 5 | 18 Weeks | yes | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 5W Ta 43W Tc | 34A | 135A | 0.0062Ohm | 79 mJ | N-Channel | 1650pF @ 30V | 6.2m Ω @ 20A, 10V | 2.2V @ 250μA | 21A Ta 34A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSC093N04LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc093n04lsgatma1-datasheets-9501.pdf | 8-PowerTDFN | Contains Lead | 5 | 39 Weeks | No SVHC | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | Halogen Free | DUAL | FLAT | 8 | 35W | 1 | R-PDSO-F5 | 3.6 ns | 2.4ns | 2.8 ns | 16 ns | 13A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 35W Tc | 0.0093Ohm | N-Channel | 1900pF @ 20V | 9.3m Ω @ 40A, 10V | 2V @ 14μA | 13A Ta 49A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STD17NF03L-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std17nf03lt4-datasheets-9402.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 8.4mm | 2.4mm | 3 | No SVHC | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | 260 | STD17 | 3 | 1 | Single | 30 | 30W | 1 | FET General Purpose Power | 175°C | 11 ns | 100ns | 22 ns | 25 ns | 17A | 16V | SILICON | DRAIN | SWITCHING | 30W Tc | 68A | 0.06Ohm | 200 mJ | 30V | N-Channel | 320pF @ 25V | 1.5 V | 50m Ω @ 8.5A, 10V | 2.2V @ 250μA | 17A Tc | 6.5nC @ 5V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| FDMS86500L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86500l-datasheets-0201.pdf | 8-PowerTDFN | 5mm | 1.1mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | No SVHC | 2.5MOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e3 | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 150°C | R-PDSO-F5 | 27 ns | 16ns | 7.8 ns | 63 ns | 25A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 2.5W Ta 104W Tc | MO-240AA | 240 mJ | 60V | N-Channel | 12530pF @ 30V | 1.8 V | 2.5m Ω @ 25A, 10V | 3V @ 250μA | 25A Ta 80A Tc | 165nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| STN3N45K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stn3n45k3-datasheets-9804.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 9 Weeks | No SVHC | 3.8Ohm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STN3N | 4 | Single | 30 | 2W | 1 | FET General Purpose Power | 600mA | 30V | SILICON | DRAIN | SWITCHING | 3.75V | 3W Ta | 0.6A | 450V | N-Channel | 150pF @ 25V | 3.8 Ω @ 500mA, 10V | 4.5V @ 50μA | 600mA Tc | 6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| ZXMN3A03E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn3a03e6ta-datasheets-9526.pdf | 30V | 4.2A | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 50mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.7W | 1 | FET General Purpose Power | 2.9 ns | 6.4ns | 6.4 ns | 16 ns | 4.6A | 20V | SILICON | SWITCHING | 1.1W Ta | 3.7A | 30V | N-Channel | 600pF @ 25V | 50m Ω @ 7.8A, 10V | 1V @ 250μA | 3.7A Ta | 12.6nC @ 10V | 4.5V 10V | ±20V |
