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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CSD19502Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19502q5b-datasheets-1484.pdf | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD19502 | 1 | Single | NOT SPECIFIED | 3.2W | 1 | FET General Purpose Power | 8 ns | 6ns | 7 ns | 22 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 2.7V | 3.1W Ta 195W Tc | 400A | 22 pF | 274 mJ | 80V | N-Channel | 4870pF @ 40V | 4.1m Ω @ 19A, 10V | 3.3V @ 250μA | 100A Ta | 62nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSC030P03NS3GAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsc030p03ns3gauma1-datasheets-0965.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 1 | 2.5W | 1 | 150°C | R-PDSO-F5 | 27 ns | 105ns | 33 ns | 98 ns | -25.4A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.5W Ta 125W Tc | 200A | 0.0046Ohm | 345 mJ | -30V | P-Channel | 14000pF @ 15V | 3m Ω @ 50A, 10V | 3.1V @ 345μA | 25.4A Ta 100A Tc | 186nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| ZVN4424A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvn4424a-datasheets-1055.pdf | 240V | 260mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 5.5Ohm | 3 | no | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 750mW | 1 | FET General Purpose Powers | 2.5 ns | 5ns | 5 ns | 40 ns | 260mA | 40V | SILICON | SWITCHING | 1.3V | 750mW Ta | 0.26A | 240V | N-Channel | 200pF @ 25V | 5.5 Ω @ 500mA, 10V | 1.8V @ 1mA | 260mA Ta | 2.5V 10V | ±40V | ||||||||||||||||||||||||||||||||||||||
| STF40NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf40nf06-datasheets-1062.pdf | 60V | 23A | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 28MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF40N | 3 | Single | 30W | 1 | FET General Purpose Power | 27 ns | 11ns | 11 ns | 27 ns | 23A | 20V | SILICON | SWITCHING | 30W Tc | TO-220AB | 92A | 250 mJ | 60V | N-Channel | 920pF @ 25V | 28m Ω @ 11.5A, 10V | 4V @ 250μA | 23A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI7858ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7858adpt1ge3-datasheets-0758.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-PDSO-C5 | 40 ns | 40ns | 40 ns | 140 ns | 20A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 0.0026Ohm | 12V | N-Channel | 5700pF @ 6V | 2.6m Ω @ 29A, 4.5V | 1.5V @ 250μA | 20A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| TPW4R50ANH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 25 ns | 9.6ns | 13 ns | 52 ns | 92A | 20V | 100V | 800mW Ta 142W Tc | N-Channel | 5200pF @ 50V | 4.5m Ω @ 46A, 10V | 4V @ 1mA | 92A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7450DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7450dpt1e3-datasheets-1059.pdf | 20V | 5.3A | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 80mOhm | 8 | yes | EAR99 | Tin | No | S17-0173_SINGLE | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 14 ns | 20ns | 25 ns | 32 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 40A | 200V | N-Channel | 2 V | 80m Ω @ 4A, 10V | 4.5V @ 250μA | 3.2A Ta | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSC028N06LS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc028n06ls3gatma1-datasheets-1090.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | Halogen Free | DUAL | FLAT | 8 | 1 | 2.5W | 1 | 150°C | R-PDSO-F5 | 19 ns | 17ns | 77 ns | 23A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 139W Tc | 400A | 60V | N-Channel | 13000pF @ 30V | 2.8m Ω @ 50A, 10V | 2.2V @ 93μA | 23A Ta 100A Tc | 175nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS4620TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4620trlpbf-datasheets-1128.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 9.65mm | 4.826mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | R-PSSO-G2 | 13.4 ns | 22.4ns | 14.8 ns | 25.4 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 144W Tc | 100A | 0.0775Ohm | 200V | N-Channel | 1710pF @ 50V | 77.5m Ω @ 15A, 10V | 5V @ 100μA | 24A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI7450DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7450dpt1e3-datasheets-1059.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 80mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 14 ns | 20ns | 20 ns | 32 ns | 3.2A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 1.9W Ta | 40A | 200V | N-Channel | 80m Ω @ 4A, 10V | 4.5V @ 250μA | 3.2A Ta | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4126DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si4126dyt1ge3-datasheets-1169.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 2.75mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3.5W | 1 | FET General Purpose Power | 36 ns | 20ns | 24 ns | 53 ns | 39A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Ta 7.8W Tc | 26.5A | 30V | N-Channel | 4405pF @ 15V | 2.75m Ω @ 15A, 10V | 2.5V @ 250μA | 39A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDS86240 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fds86240-datasheets-1070.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | Lead Free | 8 | 5 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 5W | 1 | FET General Purpose Power | 14 ns | 10ns | 10 ns | 24 ns | 7.5A | 20V | SILICON | SWITCHING | 2.7V | 2.5W Ta 5W Tc | 150V | N-Channel | 2570pF @ 75V | 19.8m Ω @ 7.5A, 10V | 4V @ 250μA | 7.5A Ta | 40nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFR5305TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfr5305trl-datasheets-1139.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 110W | 1 | R-PSSO-G2 | 14 ns | 66ns | 63 ns | 39 ns | 31A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 110W Tc | TO-252AA | 0.065Ohm | 280 mJ | -55V | P-Channel | 1200pF @ 25V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSC047N08NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-bsc047n08ns3gatma1-datasheets-1215.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 125W | 1 | Not Qualified | R-PDSO-F5 | 18 ns | 17ns | 11 ns | 44 ns | 18A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 125W Tc | 400A | 0.0047Ohm | N-Channel | 4800pF @ 40V | 4.7m Ω @ 50A, 10V | 3.5V @ 90μA | 18A Ta 100A Tc | 69nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLD024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irld024pbf-datasheets-1254.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 100mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 870pF | 11 ns | 110ns | 110 ns | 23 ns | 2.5A | 10V | 60V | 2V | 1.3W Ta | 260 ns | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 1.5A, 5V | 2V @ 250μA | 2.5A Ta | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R385CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CP | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r385cpatma1-datasheets-0922.pdf | 600V | 9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 8 Weeks | 3.949996g | 3 | 1 | 83W | PG-TO252-3 | 790pF | 10 ns | 5ns | 5 ns | 40 ns | 9A | 20V | 600V | 600V | 83W Tc | 350mOhm | 600V | N-Channel | 790pF @ 100V | 385mOhm @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 22nC @ 10V | 385 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPW4R008NH,L1Q | Toshiba Semiconductor and Storage | $4.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 25 ns | 8.6ns | 12 ns | 52 ns | 116A | 20V | 80V | 800mW Ta 142W Tc | N-Channel | 5300pF @ 40V | 4m Ω @ 50A, 10V | 4V @ 1mA | 116A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7115dnt1ge3-datasheets-0397.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 295mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 11 ns | 28ns | 35 ns | 52 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 150V | -2V | 3.7W Ta 52W Tc | -150V | P-Channel | 1190pF @ 50V | -2 V | 295m Ω @ 4A, 10V | 4V @ 250μA | 8.9A Tc | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| EPC2007C | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/epc-epc2007c-datasheets-0314.pdf | Die | 12 Weeks | Die Outline (5-Solder Bar) | 220pF | 6A | 100V | N-Channel | 220pF @ 50V | 30mOhm @ 6A, 5V | 2.5V @ 1.2mA | 6A Ta | 2.2nC @ 5V | 30 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4423DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4423dyt1e3-datasheets-0791.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 7.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | 75 ns | 165ns | 165 ns | 460 ns | -14A | 8V | SILICON | SWITCHING | -400mV | 1.5W Ta | 20V | P-Channel | -400 mV | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 175nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| IPD068N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd068n10n3gatma1-datasheets-0794.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 90A | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 0.0068Ohm | N-Channel | 4910pF @ 50V | 6.8m Ω @ 90A, 10V | 3.5V @ 90μA | 90A Tc | 68nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR668ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir668adpt1re3-datasheets-0824.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 104W Tc | N-Channel | 3750pF @ 50V | 4.8mOhm @ 20A, 10V | 4V @ 250μA | 93.6A Tc | 81nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF510PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf510pbf-datasheets-0849.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 540mOhm | 3 | Tin | No | 1 | Single | 43W | 1 | TO-220AB | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 4V | 43W Tc | 200 ns | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| CSD16401Q5 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16401 | 8 | Single | 3.1W | 1 | FET General Purpose Power | 16.6 ns | 30ns | 12.7 ns | 20 ns | 100A | 16V | 25V | SILICON | DRAIN | SWITCHING | 1.5V | 3.1W Ta | 240A | 0.0023Ohm | 230 pF | 500 mJ | 25V | N-Channel | 4100pF @ 12.5V | 1.5 V | 1.6m Ω @ 40A, 10V | 1.9V @ 250μA | 38A Ta 100A Tc | 29nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||
| SUD50P06-15-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50p0615ge3-datasheets-0843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 1 | 30 | 2.5W | 1 | Other Transistors | Not Qualified | 150°C | R-PSSO-G2 | 15 ns | 175 ns | -50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 2.5W Ta 113W Tc | 80A | -60V | P-Channel | 4950pF @ 25V | 15m Ω @ 17A, 10V | 3V @ 250μA | 50A Tc | 165nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI7478DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7478dpt1e3-datasheets-0846.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 115 ns | 20A | 20V | SILICON | DRAIN | 3V | 1.9W Ta | 60A | 60V | N-Channel | 3 V | 7.5m Ω @ 20A, 10V | 3V @ 250μA | 15A Ta | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI7478DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7478dpt1e3-datasheets-0846.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 115 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.9W Ta | 60A | 60V | N-Channel | 7.5m Ω @ 20A, 10V | 3V @ 250μA | 15A Ta | 160nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF630 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MESH OVERLAY™ II | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-irf630-datasheets-0941.pdf | 200V | 9A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 400mOhm | 3 | 2.54mm | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | IRF6 | 3 | Single | 75W | 1 | FET General Purpose Power | 10 ns | 15ns | 9A | 20V | 200V | SILICON | SWITCHING | 3V | 75W Tc | TO-220AB | 170 ns | 9A | 50 pF | 200V | N-Channel | 700pF @ 25V | 3 V | 400m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7137DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7137dpt1ge3-datasheets-0739.pdf | PowerPAK® SO-8 | 6.15mm | 1.12mm | 5.15mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 1.95mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 100 ns | 150ns | 110 ns | 230 ns | -60A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | -1.4V | 6.25W Ta 104W Tc | 42A | -20V | P-Channel | 20000pF @ 10V | -1.4 V | 1.95m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 585nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||
| SI7812DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si7812dnt1ge3-datasheets-0414.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Powers | S-XDSO-C5 | 15 ns | 20ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 3.8W Ta 52W Tc | 7.2A | 25A | 0.037Ohm | 75V | N-Channel | 840pF @ 35V | 37m Ω @ 7.2A, 10V | 3V @ 250μA | 16A Tc | 24nC @ 10V | 4.5V 10V | ±20V |
