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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Wire/Cable Gauge | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFP150NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfp150npbf-datasheets-3224.pdf | 100V | 42A | TO-247-3 | 15.875mm | 24.99mm | 5.3mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 36mOhm | 3 | 5.45mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | 1 | Single | 140W | 1 | FET General Purpose Power | 175°C | 11 ns | 56ns | 40 ns | 45 ns | 42A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 160W Tc | TO-247AC | 270 ns | 420 mJ | 100V | N-Channel | 1900pF @ 25V | 4 V | 36m Ω @ 23A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SQM120P06-07L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqm120p0607lge3-datasheets-3246.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | 12 Weeks | 1 | 375W | 175°C | TO-263 (D2Pak) | 15 ns | 97 ns | -120A | 20V | 60V | 375W Tc | 5.6mOhm | -60V | P-Channel | 14280pF @ 25V | 6.7mOhm @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 270nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4115TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfs4115trlpbf-datasheets-3250.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | Lead Free | 2 | 12 Weeks | 11.8MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 375W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 73ns | 39 ns | 41 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 99A | 150V | N-Channel | 5270pF @ 50V | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 195A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP250MPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfp250mpbf-datasheets-3286.pdf | TO-247-3 | 16.129mm | 21.1mm | 5.2mm | Lead Free | 3 | 12 Weeks | No SVHC | 75MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 214W | 1 | FET General Purpose Power | 14 ns | 43ns | 33 ns | 41 ns | 30A | 20V | SILICON | SWITCHING | 4V | 214W Tc | TO-247AC | 200V | N-Channel | 2159pF @ 25V | 75m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 123nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4321TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfs4321trlpbf-datasheets-3082.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 5.084mm | 9.65mm | Lead Free | 12 Weeks | No SVHC | 15MOhm | 3 | No | 1 | Single | 350W | 1 | 175°C | D2PAK | 4.46nF | 18 ns | 60ns | 35 ns | 25 ns | 85A | 30V | 150V | 5V | 350W Tc | 12mOhm | 150V | N-Channel | 4460pF @ 25V | 5 V | 15mOhm @ 33A, 10V | 5V @ 250μA | 85A Tc | 110nC @ 10V | 15 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB3632 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdh3632-datasheets-1444.pdf | 100V | 44A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 5.08mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 9MOhm | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | 1 | Single | 310W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 30 ns | 39ns | 46 ns | 96 ns | 80A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 100V | N-Channel | 6000pF @ 25V | 4 V | 9m Ω @ 80A, 10V | 4V @ 250μA | 12A Ta 80A Tc | 110nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS3207ZTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs3207ztrrpbf-datasheets-3199.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | Not Qualified | R-PSSO-G2 | 68ns | 68 ns | 120A | SILICON | DRAIN | SWITCHING | 300W Tc | 670A | 0.0041Ohm | 170 mJ | 75V | N-Channel | 6920pF @ 50V | 4.1m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2019 | EPC | $3.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2019-datasheets-3327.pdf | Die | 12 Weeks | Die | 270pF | 8.5A | 200V | N-Channel | 270pF @ 100V | 50mOhm @ 7A, 5V | 2.5V @ 1.5mA | 8.5A Ta | 2.5nC @ 5V | 50 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP304-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-atp304tlh-datasheets-3007.pdf | ATPAK (2 leads+tab) | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | not_compliant | e6 | Halogen Free | YES | GULL WING | 3 | 1 | Single | 90W | 1 | Other Transistors | R-PSSO-G2 | 80 ns | 650ns | 460 ns | 780 ns | 100A | 20V | SILICON | DRAIN | 60V | 90W Tc | 400A | 0.0089Ohm | 656 mJ | -60V | P-Channel | 13000pF @ 20V | 6.5m Ω @ 50A, 10V | 100A Ta | 250nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC027N10NS5ATMA1 | Infineon Technologies | $3.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc027n10ns5atma1-datasheets-3168.pdf | 8-PowerTDFN | 39 Weeks | 100V | 3W Ta 214W Tc | N-Channel | 8200pF @ 50V | 2.7m Ω @ 50A, 10V | 3.8V @ 146μA | 23A Ta 100A Tc | 111nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R8-100BSEJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Wire Wrap | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn4r8100bsej-datasheets-3042.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | Brass, Bronze | 2 | 12 Weeks | 3.949996g | 3 | Tin | not_compliant | 18 AWG | e3 | YES | GULL WING | 3 | Single | 405W | 1 | R-PSSO-G2 | 41 ns | 65ns | 69 ns | 127 ns | 120A | 20V | 100V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 405W Tc | Gold, Lead, Tin | 707A | 707A | 0.0048Ohm | 542 mJ | N-Channel | 14400pF @ 50V | 294ns | 4.8m Ω @ 25A, 10V | 4V @ 1mA | 120A Tj | 278nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R1-40BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn1r140bs118-datasheets-2988.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 306W | 1 | R-PSSO-G2 | 45 ns | 66ns | 53 ns | 111 ns | 120A | 20V | 40V | SILICON | DRAIN | SWITCHING | 306W Tc | 40V | N-Channel | 9710pF @ 20V | 1.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 136nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2169H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2169hele-datasheets-2546.pdf | SC-100, SOT-669 | 1.1mm | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | SINGLE | GULL WING | 260 | 5 | 1 | 20 | 30W | 1 | FET General Purpose Power | 150°C | R-PSSO-G4 | 15 ns | 64ns | 9.5 ns | 55 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30W Tc | 200A | 0.006Ohm | 40V | N-Channel | 6650pF @ 10V | 3.5m Ω @ 25A, 10V | 2.5V @ 1mA | 50A Ta | 45nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R8-100BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn3r8100bs118-datasheets-3214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 306W Tc | 120A | 680A | 0.0039Ohm | 537 mJ | N-Channel | 9900pF @ 50V | 3.9m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL15N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl15n65m5-datasheets-2795.pdf | 8-PowerVDFN | 5.4mm | 1mm | 6.35mm | Lead Free | 17 Weeks | 375mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STL15 | Single | 52W | 1 | 30 ns | 8ns | 12.5 ns | 11 ns | 10A | 25V | 52W Tc | 650V | N-Channel | 816pF @ 100V | 375m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 22nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P04-09L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqd50p0409lge3-datasheets-2137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | GULL WING | 4 | 1 | Single | 136W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 15ns | 19 ns | 61 ns | 50A | 20V | SILICON | DRAIN | 40V | 40V | -1.5V | 136W Tc | 0.0094Ohm | P-Channel | 6675pF @ 20V | 9.4m Ω @ 17A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB15N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdb15n50-datasheets-2922.pdf | 500V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 10 Weeks | 1.31247g | No SVHC | 380mOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 5.4ns | 5 ns | 26 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 3.4V | 300W Tc | 60A | 760 mJ | 500V | N-Channel | 1850pF @ 25V | 3.4 V | 380m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FDMS86101DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86101dc-datasheets-2946.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 4 Weeks | 90mg | 7.5MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | FLAT | 1 | Single | 125W | 1 | FET General Purpose Power | 150°C | R-PDSO-F5 | 14 ns | 8.2ns | 5.5 ns | 25 ns | 14.5A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta 125W Tc | MO-240AA | 60A | 200A | 100V | N-Channel | 3135pF @ 50V | 7.5m Ω @ 14.5A, 10V | 4V @ 250μA | 14.5A Ta 60A Tc | 44nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STF10N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf10n60m2-datasheets-2993.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STF10N | 1 | Single | 25W | 8.8 ns | 8ns | 13.2 ns | 32.5 ns | 7.5A | 25V | 25W Tc | 600V | N-Channel | 400pF @ 100V | 600m Ω @ 4A, 10V | 4V @ 250μA | 7.5A Tc | 13.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf540pbf-datasheets-2998.pdf | 100V | 28A | TO-220-3 | 10.51mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 77mOhm | 3 | No | 28A | 100V | 1 | Single | 150W | 1 | 175°C | TO-220AB | 1.7nF | 11 ns | 44ns | 43 ns | 53 ns | 28A | 20V | 100V | 4V | 150W Tc | 360 ns | 77mOhm | 100V | N-Channel | 1700pF @ 25V | 4 V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP9NK50ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp9nk50zfp-datasheets-3034.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 850MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | e3 | NOT SPECIFIED | STP9N | 3 | Single | NOT SPECIFIED | 30W | 1 | FET General Purpose Power | Not Qualified | 17 ns | 20ns | 22 ns | 45 ns | 7.2A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 28.8A | 500V | N-Channel | 910pF @ 25V | 850m Ω @ 3.6A, 10V | 4.5V @ 100μA | 7.2A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3306PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfb3306pbf-datasheets-3047.pdf | 60V | 160A | TO-220-3 | 10.668mm | 19.8mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.2MOhm | 3 | EAR99 | No | 1 | Single | 230W | 1 | FET General Purpose Power | 175°C | 15 ns | 76ns | 77 ns | 40 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | TO-220AB | 31 ns | 620A | 60V | N-Channel | 4520pF @ 50V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3206TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfs3206trrpbf-datasheets-3065.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 82ns | 83 ns | 55 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 840A | 60V | N-Channel | 6540pF @ 50V | 3m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18532Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18532 | Single | NOT SPECIFIED | 1 | 5.8 ns | 7.2ns | 3.1 ns | 22 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.2W Ta 156W Tc | 23A | 400A | 0.0043Ohm | 17 pF | 320 mJ | N-Channel | 5070pF @ 30V | 3.2m Ω @ 25A, 10V | 2.2V @ 250μA | 100A Ta | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDB38N30U | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdb38n30u-datasheets-2570.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 21 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 313W | 1 | FET General Purpose Power | R-PSSO-G2 | 33 ns | 80ns | 62 ns | 133 ns | 38A | 30V | SILICON | DRAIN | SWITCHING | 313W Tc | 722 mJ | 300V | N-Channel | 3340pF @ 25V | 120m Ω @ 19A, 10V | 5V @ 250μA | 38A Tc | 73nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86200DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms86200dc-datasheets-2823.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 13 Weeks | 90mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | FLAT | 1 | Single | 3.2W | 1 | FET General Purpose Power | 150°C | R-PDSO-F5 | 16 ns | 4ns | 5 ns | 23 ns | 9.3A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta 125W Tc | MO-240AA | 294 mJ | 150V | N-Channel | 2955pF @ 75V | 17m Ω @ 9.3A, 10V | 4V @ 250μA | 9.3A Ta 28A Tc | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDB20N50F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdb20n50f-datasheets-2787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 5 Weeks | 1.762g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 45 ns | 120ns | 60 ns | 100 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 250W Tc | 80A | 0.26Ohm | 500V | N-Channel | 3390pF @ 25V | 260m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2053 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2053-datasheets-2549.pdf | Die | 10 Weeks | Die | 100V | N-Channel | 1895pF @ 50V | 3.8mOhm @ 25A, 5V | 2.5V @ 9mA | 48A | 14.8nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180P04P4L02ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipb180p04p4l02atma1-datasheets-2610.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | 7 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 32 ns | 28ns | 119 ns | 146 ns | 180A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 150W Tc | 0.0039Ohm | 84 mJ | P-Channel | 18700pF @ 25V | 2.4m Ω @ 100A, 10V | 2.2V @ 410μA | 180A Tc | 286nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU4615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfu4615pbf-datasheets-2653.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.39mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | 15 ns | 35ns | 20 ns | 25 ns | 33A | 20V | 150V | SILICON | DRAIN | SWITCHING | 5V | 144W Tc | 0.042Ohm | 150V | N-Channel | 1750pF @ 50V | 5 V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 26nC @ 10V | 10V | ±20V |
