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IRL3713STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRL3713STRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 4441
- Description: IRL3713STRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 3MOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 330W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 330W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5890pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 260A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 4.5V |
| Rise Time | 160ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 57 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 260A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| Nominal Vgs | 2.5 V |
| Height | 4.826mm |
| Length | 10.668mm |
| Width | 9.65mm |
| Radiation Hardening | No |
IRL3713STRLPBF Description
IRL3713STRLPBF is a single HEXFET Power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 30V. The operating temperature of IRL3713STRLPBF is -55°C~175°C TJ and its maximum power dissipation are 330W. IRL3713STRLPBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads + Tab), and TO-263AB packaging way. The FET Type of IRL3713STRLPBF is N-channel and its Current Rating is 260A.
IRL3713STRLPBF Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Lead-Free
IRL3713STRLPBF Applications
High-Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
High-Frequency Buck Converters for Computer Processor Power
100% RG Tested
