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ContactFDMA410NZ
FDMA410NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA410NZ
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 6387
- Description: FDMA410NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.4W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 9.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| Rise Time | 3.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 3.7 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 9.5A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Nominal Vgs | 700 mV |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 23MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
Description
The FDMA410NZ is a Single N-Channel 1.5V Specified PowerTrench? MOSFET. This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on a special MicroFET leadframe. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly all MOSFETs fall under the umbrella of a metal-insulator-semiconductor field-effect transistor, or MISFET. IGFET, or insulated-gate field-effect transistor, is another equivalent term.
Features
HBM ESD protection level > 2.5 kV
Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
Free from halogenated compounds and antimony oxides
RoHS Compliant
Max rDS(on) = 23 m? at VGS = 4.5 V, ID = 9.5 A
Max rDS(on) = 29 m? at VGS = 2.5 V, ID = 8.0 A
Max rDS(on) = 36 m? at VGS = 1.8 V, ID = 4.0 A
Max rDS(on) = 50 m? at VGS = 1.5 V, ID = 2.0 A
Applications
Li-lon Battery Pack
Baseband Switch
Load Switch
DC-DC Conversion
Automotive Electronics
