FDV301N

FDV301N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: feilidi-FDV301N
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 3569
  • Description: FDV301N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Subcategory FET General Purpose Power
Voltage 50V
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Turn On Delay Time 3.2 ns
Power Dissipation-Max 350mW Ta
Continuous Drain Current (ID) 220mA
Max Junction Temperature (Tj) 150°C
Transistor Application SWITCHING
Turn-Off Delay Time 3.5 ns
Transistor Element Material SILICON
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4 Ω @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1.06V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
Rise Time 6ns
Fall Time (Typ) 6 ns
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 25V
Dual Supply Voltage 25V
Nominal Vgs 850 mV
Current - Continuous Drain (Id) @ 25°C 220mA Ta
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±8V
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Mount Surface Mount
Packaging Tape & Reel (TR)
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Length 2.92mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Contact Plating Tin
Current Rating 220mA
Radiation Hardening No
Number of Pins 3
Additional Feature LOGIC LEVEL COMPATIBLE
Package / Case TO-236-3, SC-59, SOT-23-3
REACH SVHC No SVHC
Height 1.11mm
Width 3.05mm
Resistance 4Ohm
Mounting Type Surface Mount
Operating Temperature -55°C~150°C TJ
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Operating Mode ENHANCEMENT MODE
Manufacturer Package Identifier SOT−23 (TO−236) CASE 318−08 ISSUE AR
Current 2A
JESD-609 Code e3

Description


The FDV301N is a SOT-23 surface mount digital FET with N channels and logic level enhancement mode. This device has a high cell density, DMOS technology that has been specifically tailored to minimize on-state resistance and maintain low gate charge for superior switching performance, and it can replace several different digital transistors with different bias resistor values with just one N channel FET. Low voltage and power management applications are ideal for the FDV301N.



Features


? Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

? Replace multiple NPN digital transistors with one DMOS FET.

? 25 V, 0.22 A continuous, 0.5 A Peak.

RDS(ON) = 5 W @ VGS= 2.7 V

RDS(ON) = 4 W @ VGS= 4.5 V

? Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V.

? This Device is Pb?Free and Halide Free



Applications


? Low Voltage

? Power Management Applications

? Buffer Amplifier

? Analog Switch

? Current Limiter


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