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ContactIRFS4310ZTRLPBF
IRFS4310ZTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFS4310ZTRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 1788
- Description: IRFS4310ZTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 250W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250W |
| Case Connection | DRAIN |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6860pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Rise Time | 60ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 57 ns |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 120A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.006Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 560A |
| Nominal Vgs | 4 V |
| Height | 4.826mm |
| Length | 10.668mm |
| Width | 9.65mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The IRFS4310ZTRLPBF is a HEXFET? Power MOSFET. The HEXFET? is a voltage-controlled power MOSFET device, which is fundamentally different. To create a flow of current in the drain, a voltage must be provided between the gate and source terminals. A layer of silicon dioxide serves as an electrical barrier between the gate and the source.
IRFS4310ZTRLPBF Features
● Ruggedness of the Gate, Avalanche, and Dynamic dV/dt
● Avalanche SOA and fully characterized capacitance
● Enhanced dV/dt and dI/dt capability of body diodes
● Lead-Free
● Very low RDS(ON) at 4.5Vgs
● Optimized for logic level drive
● Superior R*Q at 4.5Vgs
IRFS4310ZTRLPBF Applications
● Synchronous Rectification with High Efficiency in SMPS
● Power Supply Uninterruptible
● Power Switching at High Speed
● Circuits with hard switches and high frequencies
● DC motor drive
