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FDN352AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDN352AP
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1206
- Description: FDN352AP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 180MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -1.3A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 30V |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Current | 13A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 4 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 4.5V |
| Rise Time | 15ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | -1.3A |
| Threshold Voltage | -2V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | -30V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -2 V |
| Height | 1.22mm |
| Length | 2.92mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDN352AP belongs to the family of single P-channel PowerTrench? MOSFET. Based on the advanced power trench process, it is able to achieve the minimum of the on-state resistance and maintain low gate charge for superior switching performance. It is designed to be used for low-voltage and battery-powered applications in a small surface-mounted package requiring low in-line power loss, such as notebook computer power management.
FDN352AP Features
Advanced power trench process
Drain-source voltage of -30V
Operating temperature of -55 °C to 150 °C
Available in the high power version of industry standard SOT-23 package
FDN352AP Applications
Low-voltage and battery-powered applications
Notebook computer power management
