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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AOD482 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 32A | 100V | 2.5W Ta 100W Tc | N-Channel | 2000pF @ 50V | 37m Ω @ 10A, 10V | 2.7V @ 250μA | 5A Ta 32A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16411Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16411 | 8 | Single | 2.7W | 1 | FET General Purpose Power | 5.3 ns | 7.8ns | 3.1 ns | 6 ns | 56A | 16V | 25V | SILICON | DRAIN | SWITCHING | 2V | 2.7W Ta | 43 pF | 25V | N-Channel | 570pF @ 12.5V | 2 V | 10m Ω @ 10A, 10V | 2.3V @ 250μA | 14A Ta 56A Tc | 3.8nC @ 4.5V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||
| BSC100N06LS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc100n06ls3gatma1-datasheets-1244.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 8 ns | 58ns | 19 ns | 12A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 50W Tc | 200A | 22 mJ | N-Channel | 3500pF @ 30V | 10m Ω @ 50A, 10V | 2.2V @ 23μA | 12A Ta 50A Tc | 45nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y19-55B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/nexperiausainc-buk9y1955b115-datasheets-1265.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 260 | 4 | 30 | 85W | 1 | 18 ns | 180ns | 134 ns | 44 ns | 46A | 15V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85W Tc | 80 mJ | 55V | N-Channel | 1992pF @ 25V | 17.3m Ω @ 20A, 10V | 2V @ 1mA | 46A Tc | 18nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2035 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2035-datasheets-0897.pdf | Die | 12 Weeks | Die | 115pF | 1A | 60V | N-Channel | 115pF @ 30V | 45mOhm @ 1A, 5V | 2.5V @ 800μA | 1A Ta | 1.15nC @ 5V | 45 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6407 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon6407-datasheets-7868.pdf | 8-PowerSMD, Flat Leads | Lead Free | 18 Weeks | 85A | 30V | 7.3W Ta 83W Tc | P-Channel | 3505pF @ 15V | 4.5m Ω @ 20A, 10V | 2.6V @ 250μA | 32A Ta 85A Tc | 105nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4525ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn4525zta-datasheets-0911.pdf | 250V | 240mA | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 17 Weeks | 130.492855mg | No SVHC | 8.5Ohm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | FLAT | 260 | 3 | 1 | Single | 40 | 1.2W | 1 | FET General Purpose Powers | 1.25 ns | 1.7ns | 1.7 ns | 11.4 ns | 240mA | 40V | SILICON | DRAIN | SWITCHING | 1.2W Ta | 0.24A | 250V | N-Channel | 72pF @ 25V | 8.5 Ω @ 500mA, 10V | 1.8V @ 1mA | 240mA Ta | 3.65nC @ 10V | 2.4V 10V | ±40V | |||||||||||||||||||||||||||||||||||||||||
| CSD17551Q3A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 900μm | 3.3mm | Lead Free | 5 | 12 Weeks | Unknown | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 800μm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | FLAT | 260 | CSD17551 | 1 | 2.6W | 1 | FET General Purpose Power | 150°C | 8 ns | 24ns | 3.4 ns | 12 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.6V | 2.6W Ta | 30V | N-Channel | 1370pF @ 15V | 1.6 V | 9m Ω @ 11A, 10V | 2.1V @ 250μA | 12A Tc | 7.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLL3303TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll3303trpbf-datasheets-0880.pdf | 30V | 4.6A | TO-261-4, TO-261AA | 6.6802mm | 1.8mm | 3.7mm | Contains Lead, Lead Free | 4 | 10 Weeks | No SVHC | 31mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.1W | 1 | FET General Purpose Power | R-PDSO-G4 | 7.2 ns | 22ns | 28 ns | 33 ns | 4.6A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 1W Ta | 98 ns | 6.5A | 30V | N-Channel | 840pF @ 25V | 1 V | 31m Ω @ 4.6A, 10V | 1V @ 250μA | 4.6A Ta | 50nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRF7404TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7404trpbf-datasheets-1068.pdf | -20V | -6.7A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 40mOhm | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 2.5W | 1 | Other Transistors | 14 ns | 32ns | 65 ns | 100 ns | -6.7A | 12V | -20V | SILICON | 20V | 6.3 mm | -700mV | 2.5W Ta | 100 ns | 5.3A | -20V | P-Channel | 1500pF @ 15V | -700 mV | 40m Ω @ 3.2A, 4.5V | 700mV @ 250μA | 6.7A Ta | 50nC @ 4.5V | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| ZVN2106GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvn2106gta-datasheets-1017.pdf | 60V | 710mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 2Ohm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | R-PDSO-G4 | 7 ns | 8ns | 15 ns | 12 ns | 710mA | 20V | 60V | SILICON | DRAIN | SWITCHING | 2.4V | 2W Ta | 8A | 60V | N-Channel | 75pF @ 18V | 2.4 V | 2 Ω @ 1A, 10V | 2.4V @ 1mA | 710mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDN8601 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdn8601-datasheets-1052.pdf | TO-236-3, SC-59, SOT-23-3 | 1.4mm | 940μm | 2.92mm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.5W | 1 | FET General Purpose Power | 4.3 ns | 1.3ns | 3.4 ns | 7.8 ns | 2.7A | 20V | SILICON | SWITCHING | 3V | 1.5W Ta | 5 pF | 100V | N-Channel | 210pF @ 50V | 3 V | 109m Ω @ 1.5A, 10V | 4V @ 250μA | 2.7A Ta | 5nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7416TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7416trpbf-datasheets-1022.pdf | -30V | -10A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 20mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 2.5W | 1 | 150°C | 18 ns | 49ns | 60 ns | 59 ns | -10A | 20V | -30V | SILICON | SWITCHING | 30V | 6.3 mm | -2.04V | 2.5W Ta | 85 ns | 45A | 370 mJ | -30V | P-Channel | 1700pF @ 25V | -20 V | 20m Ω @ 5.6A, 10V | 1V @ 250μA | 10A Ta | 92nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7149ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7149adpt1ge3-datasheets-0709.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | No SVHC | 8 | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 1 | Single | 30 | 48W | 1 | 150°C | R-PDSO-C5 | 12ns | 12 ns | 58 ns | -50A | 25V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 5W Ta 48W Tc | 300A | 0.0052Ohm | -30V | P-Channel | 5125pF @ 15V | 5.2m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 135nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| SI1411DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1411dht1ge3-datasheets-0719.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | 420mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 1W Ta | 0.42A | 2.7Ohm | P-Channel | 2.6 Ω @ 500mA, 10V | 4.5V @ 100μA | 420mA Ta | 6.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4525E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn4525e6ta-datasheets-0737.pdf | 250V | 230mA | SOT-23-6 | 3.1mm | 1.3mm | 1.8mm | Lead Free | 6 | 17 Weeks | 14.996898mg | No SVHC | 8.5Ohm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.1W | 1 | FET General Purpose Powers | 1.25 ns | 1.7ns | 1.7 ns | 11.4 ns | 230mA | 40V | SILICON | SWITCHING | 1.4V | 1.1W Ta | 0.23A | 250V | N-Channel | 72pF @ 25V | 1.4 V | 8.5 Ω @ 500mA, 10V | 1.8V @ 1mA | 230mA Ta | 3.65nC @ 10V | 2.4V 10V | ±40V | |||||||||||||||||||||||||||||||||||||||
| ZXMN4A06GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zxmn4a06gta-datasheets-0760.pdf | 40V | 6.7A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 75mOhm | 4 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | FET General Purpose Power | 150°C | 2.55 ns | 4.45ns | 7.35 ns | 28.61 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 1V | 2W Ta | 5A | 22A | 40V | N-Channel | 770pF @ 40V | 50m Ω @ 4.5A, 10V | 1V @ 250μA | 5A Ta | 18.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQD7P20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd7p20tm-datasheets-0764.pdf | -200V | -5.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 4 Weeks | No SVHC | 690mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | 13A | e3 | 150V | GULL WING | Single | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 15 ns | 110ns | 42 ns | 30 ns | 5.7mA | 30V | SILICON | DRAIN | SWITCHING | 200V | -5V | 2.5W Ta 55W Tc | 570 mJ | -200V | P-Channel | 770pF @ 25V | 5 V | 690m Ω @ 2.85A, 10V | 5V @ 250μA | 5.7A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| DMP6023LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp6023lfg7-datasheets-0734.pdf | 8-PowerVDFN | 2.569nF | 3.3mm | 850μm | 3.3mm | 5 | 23 Weeks | 72.007789mg | 8 | EAR99 | HIGH RELIABILITY | POWERDI3333-8 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 1 | Single | 30 | 1W | 1 | 150°C | S-PDSO-N5 | 6 ns | 7.1ns | 62 ns | 110 ns | -7.7A | 20V | SILICON | DRAIN | SWITCHING | 60V | 1W Ta | 0.025Ohm | -60V | P-Channel | 2569pF @ 30V | 25m Ω @ 5A, 10V | 3V @ 250μA | 7.7A Ta | 53.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TN2404K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tn2404kt1e3-datasheets-0731.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 4Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 360mW | 1 | FET General Purpose Powers | 5 ns | 12ns | 12 ns | 35 ns | 200mA | 20V | SILICON | SWITCHING | 800mV | 360mW Ta | 0.2A | 240V | N-Channel | 800 mV | 4 Ω @ 300mA, 10V | 2V @ 250μA | 200mA Ta | 8nC @ 10V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMP4013LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp4013lfg7-datasheets-0804.pdf | 8-PowerVDFN | 2.569nF | 850μm | 23 Weeks | 8 | EAR99 | POWERDI3333-8 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 150°C | 5.3 ns | 20ns | 83 ns | 126 ns | -10.3A | 20V | 40V | -3V | 1W Ta | -40V | P-Channel | 3426pF @ 20V | 13m Ω @ 10A, 10V | 3V @ 250μA | 10.3A Ta | 68.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4425DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4425ddyt1ge3-datasheets-0794.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 9.8MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 5.7W | 1 | Other Transistors | 150°C | 12 ns | 9ns | 9 ns | 42 ns | -13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.2V | 2.5W Ta 5.7W Tc | -30V | P-Channel | 2610pF @ 15V | -1.2 V | 9.8m Ω @ 13A, 10V | 2.5V @ 250μA | 19.7A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| ZXMP7A17KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp7a17ktc-datasheets-0777.pdf | -70V | -5.7A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 160mOhm | 3 | no | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 9.25W | 1 | R-PSSO-G2 | 2.5 ns | 3.4ns | 8 ns | 27.9 ns | 5.7A | 20V | SILICON | DRAIN | SWITCHING | 70V | 2.11W Ta | -70V | P-Channel | 635pF @ 40V | 160m Ω @ 2.1A, 10V | 1V @ 250μA | 3.8A Ta | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN020-100YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn020100ys115-datasheets-0875.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | 43A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 106W Tc | MO-235 | 172A | 0.0205Ohm | 71 mJ | N-Channel | 2210pF @ 50V | 20.5m Ω @ 15A, 10V | 4V @ 1mA | 43A Tc | 41nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN7A11GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn7a11gta-datasheets-0660.pdf | 70V | 3.8A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 130mOhm | no | EAR99 | LOW THRESHOLD; FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | R-PDSO-G4 | 1.9 ns | 2ns | 5.8 ns | 11.5 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 70V | N-Channel | 298pF @ 40V | 130m Ω @ 4.4A, 10V | 1V @ 250μA | 2.7A Ta | 7.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSP171PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-bsp171ph6327xtsa1-datasheets-0653.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 6.7mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | 19A | e3 | 60V | Halogen Free | DUAL | GULL WING | 4 | Single | 1.8W | 1 | Other Transistors | 6 ns | 25ns | 87 ns | 208 ns | 1.45A | 20V | -60V | -60V | SILICON | DRAIN | 1.5V | 1.8W Ta | 0.3Ohm | 55 pF | 60V | P-Channel | 460pF @ 25V | 1.5 V | 300m Ω @ 1.9A, 10V | 2V @ 460μA | 1.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD19537Q3T |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19537q3t-datasheets-7779.pdf | 8-PowerVDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | No SVHC | 12.1mOhm | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | AVALANCHE RATED | Copper, Tin | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD19537 | 1 | 5 ns | 3ns | 3 ns | 10 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3V | 2.8W Ta 83W Tc | 9.7A | 219A | 17.3 pF | 55 mJ | N-Channel | 1680pF @ 50V | 14.5m Ω @ 10A, 10V | 3.6V @ 250μA | 50A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMS86101 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms86101-datasheets-8608.pdf | 8-PowerTDFN | 5.1mm | 1.1mm | 6.25mm | Lead Free | 5 | 10 Weeks | 68.1mg | No SVHC | 8MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | 1 | Single | 2.5W | 1 | FET General Purpose Power | 150°C | R-PDSO-N5 | 15 ns | 11ns | 7 ns | 27 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.9V | 2.5W Ta 104W Tc | MO-240AA | 200A | 100V | N-Channel | 3000pF @ 50V | 8m Ω @ 13A, 10V | 4V @ 250μA | 12.4A Ta 60A Tc | 55nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI7456DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7456dpt1e3-datasheets-9024.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 25MOhm | 8 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 1.9W | 1 | R-PDSO-F5 | 14 ns | 10ns | 10 ns | 46 ns | 5.7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 40A | 45 mJ | 100V | N-Channel | 60ns | 4 V | 25m Ω @ 9.3A, 10V | 4V @ 250μA | 5.7A Ta | 44nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFR3710ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfr3710ztrlpbf-datasheets-9532.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 140W Tc | TO-252AA | 42A | 220A | 0.018Ohm | 150 mJ | N-Channel | 2930pF @ 25V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V |
