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| Parameters | |
|---|---|
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 6.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2005 |
| Series | SIPMOS® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| Number of Elements | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 1.8W Ta |
| Element Configuration | Single |
| Current | 19A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 460μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 87 ns |
| Turn-Off Delay Time | 208 ns |
| Continuous Drain Current (ID) | 1.45A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -60V |
| Drain-source On Resistance-Max | 0.3Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | -60V |
| Nominal Vgs | 1.5 V |
| Feedback Cap-Max (Crss) | 55 pF |
BSP171PH6327XTSA1 is a -60V P-channel enhancement mode Field-Effect Transistor (FET). The Infineon can be applied in Power Management Functions, Motor control, On-board charger, DC-DC, Consumer, Logic level translators, Power MOSFET gate drivers, and Other switching applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSP171PH6327XTSA1 is in the SOT-223-4 package with 1.8W power dissipation.
Enhancement mode
Logic level
Avalanche rated
Fast switching
Dv/dt rated
Pb-free lead-plating
RoHS compliant, Halogen-free
Power Management Functions
Motor control
On-board charger
DC-DC
Consumer
Logic level translators
Power MOSFET gate drivers
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