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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQD3P50TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd3p50tm-datasheets-3491.pdf&product=onsemiconductor-fqd3p50tm-6385516 | -500V | -2.1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.517mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 4.9Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 18A | e3 | Tin (Sn) | 400V | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 12 ns | 56ns | 45 ns | 35 ns | -2.1A | 30V | SILICON | DRAIN | SWITCHING | 500V | -5V | 2.5W Ta 50W Tc | 250 mJ | -500V | P-Channel | 660pF @ 25V | 4.9 Ω @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| BSP149H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-bsp149h6327xtsa1-datasheets-3532.pdf | TO-261-4, TO-261AA | 6.5mm | 1.6mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Powers | 5.1 ns | 3.4ns | 21 ns | 45 ns | 480mA | 20V | 200V | 200V | SILICON | DRAIN | -1.4V | 1.8W Ta | 0.66A | 2.6A | 200V | N-Channel | 430pF @ 25V | -1.4 V | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 660mA Ta | 14nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD17510Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17510 | 8 | Single | 3W | 1 | FET General Purpose Power | 7 ns | 11ns | 4.1 ns | 9 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 3W Ta | 0.0073Ohm | 66 pF | 45 mJ | 30V | N-Channel | 1250pF @ 15V | 1.5 V | 5.2m Ω @ 20A, 10V | 2.1V @ 250μA | 20A Ta 100A Tc | 8.3nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7425TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf7425trpbf-datasheets-3578.pdf | -20V | -15A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead | 8 | 12 Weeks | No SVHC | 8.2MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | Other Transistors | 150°C | 13 ns | 20ns | 160 ns | 230 ns | -15A | 12V | 20V | SILICON | SWITCHING | -1.2V | 2.5W Ta | 180 ns | 60A | -20V | P-Channel | 7980pF @ 15V | 1.2 V | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 15A Ta | 130nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| FDS4141 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds4141-datasheets-3588.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.75mm | 3.9mm | Lead Free | 8 | 13 Weeks | 130mg | No SVHC | 13MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | 10 ns | 2ns | 12 ns | 42 ns | -10.8A | 20V | SILICON | SWITCHING | 40V | -1.6V | 5W Ta | 36A | 294 mJ | -40V | P-Channel | 2670pF @ 20V | -1.6 V | 13m Ω @ 10.5A, 10V | 3V @ 250μA | 10.8A Ta | 49nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| EPC2038 | EPC | $4.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2038-datasheets-3062.pdf | Die | 815μm | 12 Weeks | 1 | 150°C | Die | 500mA | 6V | 100V | 2.1Ohm | 100V | N-Channel | 8.4pF @ 50V | 3.3Ohm @ 50mA, 5V | 2.5V @ 20μA | 500mA Ta | 0.044nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17309Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 1.1mm | 3.3mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17309 | 8 | Single | 2.8W | 1 | FET General Purpose Power | 6.1 ns | 9.9ns | 3.6 ns | 13.2 ns | 60A | 10V | SILICON | DRAIN | SWITCHING | 1.2V | 2.8W Ta | 20A | 56 pF | 30V | N-Channel | 1440pF @ 15V | 1.2 V | 5.4m Ω @ 18A, 8V | 1.7V @ 250μA | 20A Ta 60A Tc | 10nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||
| CSD16406Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16406 | 8 | Single | 2.7W | 1 | FET General Purpose Power | 7.3 ns | 12.9ns | 4.8 ns | 8.5 ns | 60A | 16V | 25V | SILICON | DRAIN | SWITCHING | 1.7V | 2.7W Ta | 0.0074Ohm | 25V | N-Channel | 1100pF @ 12.5V | 1.7 V | 5.3m Ω @ 20A, 10V | 2.2V @ 250μA | 19A Ta 60A Tc | 8.1nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||
| FDC365P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdc365p-datasheets-3010.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 13 Weeks | 36mg | No SVHC | 55MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 1 | Single | 800mW | 1 | Other Transistors | 150°C | 7 ns | 3ns | 3 ns | 15 ns | -4.3A | 20V | SILICON | SWITCHING | 35V | -1.8V | 1.6W Ta | 80 pF | -35V | P-Channel | 705pF @ 20V | 55m Ω @ 4.2A, 10V | 3V @ 250μA | 4.3A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD16340Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 1.1mm | 3.3mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16340 | 8 | Single | 3W | 1 | FET General Purpose Power | 4.8 ns | 16.1ns | 5.2 ns | 13.8 ns | 60A | 10V | SILICON | DRAIN | SWITCHING | 25V | 25V | 850mV | 3W Ta | 69 pF | N-Channel | 1350pF @ 12.5V | 850 mV | 4.5m Ω @ 20A, 8V | 1.1V @ 250μA | 21A Ta 60A Tc | 9.2nC @ 4.5V | 2.5V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||
| SI7716ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7716adnt1ge3-datasheets-2437.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 13.5mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 15 ns | 12ns | 10 ns | 14 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 3.5W Ta 27.7W Tc | 32A | N-Channel | 846pF @ 15V | 13.5m Ω @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDMC6688P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc6688p-datasheets-3162.pdf | 8-PowerWDFN | 5 | 10 Weeks | 26.8mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | 260 | Single | NOT SPECIFIED | 1 | S-PDSO-N5 | 56A | SILICON | DRAIN | SWITCHING | 20V | 20V | 2.3W Ta 30W Tc | MO-240BA | 14A | 226A | 0.0065Ohm | P-Channel | 7435pF @ 10V | 6.5m Ω @ 14A, 4.5V | 1V @ 250μA | 14A Ta 56A Tc | 61nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86262P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc86262p-datasheets-2990.pdf | 8-PowerWDFN | Lead Free | 5 | 16 Weeks | 165.33333mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | NO LEAD | 260 | Single | NOT SPECIFIED | 1 | S-PDSO-N5 | 8.4A | SILICON | DRAIN | SWITCHING | 150V | 150V | 2.3W Ta 40W Tc | 35A | 0.307Ohm | 37 mJ | P-Channel | 885pF @ 75V | 307m Ω @ 2A, 10V | 4V @ 250μA | 2A Ta 8.4A Tc | 13nC @ 10V | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7117DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7117dnt1e3-datasheets-3206.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | 1.2Ohm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 7 ns | 11ns | 11 ns | 16 ns | 1.1A | 20V | SILICON | DRAIN | SWITCHING | 150V | 3.2W Ta 12.5W Tc | 2.2A | P-Channel | 510pF @ 25V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.17A Tc | 12nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI4386DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4386dyt1e3-datasheets-3241.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 7mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.47W | 1 | FET General Purpose Power | 12 ns | 9ns | 9 ns | 35 ns | 16A | 20V | SILICON | SWITCHING | 1.47W Ta | 30V | N-Channel | 2 V | 7m Ω @ 16A, 10V | 2.5V @ 250μA | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSZ123N08NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz123n08ns3gatma1-datasheets-3117.pdf | 8-PowerVDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 66W | 1 | Not Qualified | S-PDSO-N5 | 12 ns | 18ns | 4 ns | 19 ns | 10A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 66W Tc | N-Channel | 1700pF @ 40V | 12.3m Ω @ 20A, 10V | 3.5V @ 33μA | 10A Ta 40A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R6-40YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn2r640ys115-datasheets-3265.pdf | SC-100, SOT-669 | 1.2mm | 4 | 12 Weeks | 4 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | 131W | 1 | 175°C | 24 ns | 46 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 131W Tc | MO-235 | 0.0028Ohm | 40V | N-Channel | 3776pF @ 12V | 2.8m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3806TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfr3806trpbf-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 15.8MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.3 ns | 40ns | 47 ns | 49 ns | 43mA | 20V | SILICON | SWITCHING | 71W Tc | TO-252AA | 60V | N-Channel | 1150pF @ 50V | 2 V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NTD6416ANLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntd6416anlt4g-datasheets-2452.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 5 Weeks | No SVHC | 74MOhm | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | Single | 40 | 71W | 1 | FET General Purpose Power | R-PDSO-G2 | 7 ns | 16ns | 40 ns | 35 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2.2V | 71W Tc | 70A | 50 mJ | 100V | N-Channel | 1000pF @ 25V | 2.2 V | 74m Ω @ 19A, 10V | 2.2V @ 250μA | 19A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR5305TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr5305trpbf-datasheets-3036.pdf | -55V | -31A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 65mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 110W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 14 ns | 66ns | 63 ns | 39 ns | -31A | 20V | 55V | -55V | SILICON | DRAIN | SWITCHING | -4V | 110W Tc | TO-252AA | 110 ns | 280 mJ | -55V | P-Channel | 1200pF @ 25V | -4 V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| CSD16323Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 1.1mm | 3.3mm | Contains Lead | 5 | 6 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16323 | 8 | Single | 3W | 1 | FET General Purpose Power | 5.3 ns | 15ns | 6.3 ns | 13 ns | 60A | 10V | 25V | SILICON | DRAIN | SWITCHING | 1.1V | 3W Ta | 0.0065Ohm | 65 pF | 25V | N-Channel | 1300pF @ 12.5V | 1.1 V | 4.5m Ω @ 24A, 8V | 1.4V @ 250μA | 21A Ta 60A Tc | 8.4nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||
| FDD86380-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdd86380f085-datasheets-2274.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7 Weeks | 260.37mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 50A | 80V | 75W Tj | N-Channel | 1440pF @ 40V | 13.5m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVP0545GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp0545gta-datasheets-1530.pdf | -450V | -75mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 150Ohm | no | EAR99 | Tin | No | e3 | DUAL | GULL WING | 4 | 1 | Single | 2W | 1 | R-PDSO-G4 | 10 ns | 15ns | 20 ns | 15 ns | 75mA | 20V | SILICON | DRAIN | SWITCHING | 450V | 2W Ta | 0.075A | 5 pF | P-Channel | 120pF @ 25V | 35ns | 25ns | 150 Ω @ 50mA, 10V | 4.5V @ 1mA | 75mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| LND150N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microchiptechnology-lnd150n8g-datasheets-2839.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 5 Weeks | 52.786812mg | No SVHC | 4 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | FLAT | 260 | 1 | Single | 40 | 1.2W | 1 | R-PSSO-F3 | 90 ns | 450ns | 450 ns | 100 ns | 30mA | 20V | SILICON | SOURCE | SWITCHING | 1.6W Ta | 0.03A | 500V | N-Channel | 10pF @ 25V | 1000 Ω @ 500μA, 0V | 30mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSZ067N06LS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bsz067n06ls3gatma1-datasheets-2871.pdf | 8-PowerVDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | S-PDSO-N5 | 26ns | 14A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | N-Channel | 5100pF @ 30V | 6.7m Ω @ 20A, 10V | 2.2V @ 35μA | 14A Ta 20A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6685 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdd6685-datasheets-2847.pdf | -30V | -40A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 20MOhm | 3 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | Tin | No | GULL WING | Single | 52W | 1 | Other Transistors | R-PSSO-G2 | 17 ns | 11ns | 21 ns | 43 ns | -40A | 25V | 30V | SILICON | DRAIN | SWITCHING | -1.8V | 52W Ta | -30V | P-Channel | 1715pF @ 15V | 1.8 V | 20m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta 40A Tc | 24nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| PSMN1R4-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn1r430yldx-datasheets-2805.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | HIGH RELIABILITY | No | YES | GULL WING | 4 | 1 | Single | 1 | 23 ns | 28ns | 20.6 ns | 31.5 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 166W Tc | MO-235 | 653 mJ | 30V | N-Channel | 3840pF @ 15V | 1.42m Ω @ 25A, 10V | 2.2V @ 1mA | 100A Tc | 54.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19534Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD19534 | 1 | Single | NOT SPECIFIED | 3.2W | 1 | 150°C | 9 ns | 14ns | 6 ns | 20 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 3.2W Ta 63W Tc | 7.4 pF | 55 mJ | 100V | N-Channel | 1680pF @ 50V | 15.1m Ω @ 10A, 10V | 3.4V @ 250μA | 50A Ta | 22nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| MIC94052YC6-TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microchiptechnology-mic94052yc6tr-datasheets-2935.pdf | -6V | -2A | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 9 Weeks | 84MOhm | 6 | No | MIC94052 | 270mW | 1 | SC-70-6 | 15 ns | 60 ns | 2A | 6V | 6V | 270mW Ta | 84mOhm | P-Channel | 84mOhm @ 100mA, 4.5V | 1.2V @ 250μA | 2A Ta | 84 mΩ | 1.8V 4.5V | 6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2040 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2040-datasheets-2966.pdf | Die | 16 Weeks | Die | 15V | N-Channel | 105pF @ 6V | 30mOhm @ 1.5A, 5V | 2.5V @ 1mA | 3.4A Ta | 0.93nC @ 5V | 5V |
