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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMG3401LSN-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmg3401lsn7-datasheets-4511.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 15 Weeks | 7.994566mg | No SVHC | 3 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.2W | 1 | Other Transistors | 8 ns | 13ns | 38 ns | 71 ns | 3A | 12V | SILICON | SWITCHING | 800mW Ta | 3A | 0.05Ohm | 30V | P-Channel | 1326pF @ 15V | 50m Ω @ 4A, 10V | 1.3V @ 250μA | 3A Ta | 25.1nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| DMP2035U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/diodesincorporated-dmp2035u7-datasheets-4587.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 15 Weeks | 7.994566mg | No SVHC | 62mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 810mW | 1 | Other Transistors | 150°C | 16.8 ns | 12.4ns | 42.4 ns | 94.1 ns | -4.9A | 10V | SILICON | SWITCHING | 20V | 810mW Ta | -20V | P-Channel | 1610pF @ 10V | 35m Ω @ 4A, 4.5V | 1V @ 250μA | 3.6A Ta | 15.4nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| DMN2041L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn2041l7-datasheets-4357.pdf&product=diodesincorporated-dmn2041l7-6385646 | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 16 Weeks | 7.994566mg | No SVHC | 41mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 780mW | 1 | FET General Purpose Powers | 4.69 ns | 13.19ns | 6.43 ns | 22.1 ns | 6.4A | 12V | SILICON | SWITCHING | 780mW Ta | 20V | N-Channel | 550pF @ 10V | 28m Ω @ 6A, 4.5V | 1.2V @ 250μA | 6.4A Ta | 15.6nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| DMG2307L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmg2307l7-datasheets-4380.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1mm | 1.4mm | Lead Free | 3 | 5 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.36W | 1 | Other Transistors | 4.8 ns | 7.3ns | 13.4 ns | 22.4 ns | 3.8A | 20V | SILICON | SWITCHING | 30V | 760mW Ta | 2.5A | P-Channel | 371.3pF @ 15V | 90m Ω @ 2.5A, 10V | 3V @ 250μA | 2.5A Ta | 8.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTR2101PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntr2101pt1g-datasheets-4386.pdf | -8V | -3.7A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 13 Weeks | No SVHC | 39MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 960mW | 1 | Other Transistors | 7.4 ns | 15.75ns | 15.75 ns | 38 ns | 3.7A | 8V | SILICON | SWITCHING | -1V | 960mW Ta | -8V | P-Channel | 1173pF @ 4V | 52m Ω @ 3.5A, 4.5V | 1V @ 250μA | 15nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| AO3400A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | Lead Free | 3 | 3 | yes | EAR99 | No | DUAL | GULL WING | 3 | 1 | 1.4W | 1 | 150°C | 3 ns | 25 ns | 5.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650mV | 1.4W Ta | 0.0265Ohm | 30V | N-Channel | 630pF @ 15V | 26.5m Ω @ 5.7A, 10V | 1.5V @ 250μA | 5.7A Ta | 7nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| NTK3134NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntk3134nt1g-datasheets-4420.pdf | SOT-723 | 1.25mm | 550μm | 850μm | Lead Free | 3 | 4 Weeks | No SVHC | 200mOhm | 3 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 260 | 3 | Single | 40 | 310mW | 1 | FET General Purpose Power | 6.7 ns | 4.8ns | 4.8 ns | 17.3 ns | 890mA | 6V | SILICON | SWITCHING | 1.2V | 310mW Ta | 0.89A | 20V | N-Channel | 120pF @ 16V | 350m Ω @ 890mA, 4.5V | 1.2V @ 250μA | 750mA Ta | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||
| DMN2056U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn2056u7-datasheets-4317.pdf | TO-236-3, SC-59, SOT-23-3 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 940mW | N-Channel | 339pF @ 10V | 38m Ω @ 3.6A, 4.5V | 1V @ 250μA | 4A Ta | 4.3nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3415 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | 3 | 3 | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.5W | 1 | Not Qualified | 150°C | 13 ps | 19 ps | -30A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 8mV | 1.5W Ta | 4A | 0.054Ohm | 110 pF | -20V | P-Channel | 1450pF @ 10V | 43m Ω @ 4A, 4.5V | 1V @ 250μA | 4A Ta | 17.2nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI2365EDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2365edst1ge3-datasheets-4458.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1W | 1 | Other Transistors | 150°C | 9 ns | 32μs | 21 μs | 65 ns | -4.5A | 8V | SILICON | SWITCHING | 20V | -1V | 1W Ta 1.7W Tc | 5.9A | -20V | P-Channel | 32m Ω @ 4A, 4.5V | 1V @ 250μA | 5.9A Tc | 36nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| AO3415A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | Lead Free | 16 Weeks | 3 | No | 1.5W | 1 | Other Transistors | 5A | Single | 20V | 1.5W Ta | 4A | P-Channel | 940pF @ 10V | 45m Ω @ 4A, 4.5V | 850mV @ 250μA | 5A Ta | 11nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTR0202PLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-ntr0202plt1g-datasheets-4482.pdf | -20V | -400mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 4 Weeks | No SVHC | 550MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 225mW | 1 | Other Transistors | 3 ns | 6ns | 6 ns | 18 ns | 400mA | 20V | SILICON | SWITCHING | -1.9V | 225mW Ta | 0.4A | -20V | P-Channel | 70pF @ 5V | 800m Ω @ 200mA, 10V | 2.3V @ 250μA | 400mA Ta | 2.18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMP10H4D2S-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp10h4d2s7-datasheets-4407.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 3 | 17 Weeks | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 380mW | 1 | 150°C | R-PDSO-G3 | 3.3 ns | 8.4 ns | -270mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 380mW Ta | 0.27A | -100V | P-Channel | 87pF @ 25V | 4.2 Ω @ 500mA, 10V | 3V @ 250μA | 270mA Ta | 1.8nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AO3407A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1.4W | 1 | Other Transistors | 4.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.4W Ta | 0.048Ohm | 90 pF | P-Channel | 830pF @ 15V | 48m Ω @ 4.3A, 10V | 3V @ 250μA | 4.3A Ta | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN601K-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/diodesincorporated-dmn601k7-datasheets-4216.pdf | 60V | 300mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 14 Weeks | 7.994566mg | No SVHC | 2Ohm | 3 | yes | EAR99 | LOW CAPACITANCE | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 350mW | 1 | FET General Purpose Powers | 300mA | 20V | SILICON | SWITCHING | 1.6V | 350mW Ta | 5 pF | N-Channel | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 300mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPD50P04P4L11ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd50p04p4l11atma1-datasheets-3336.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 17 Weeks | 3 | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 58W | 1 | R-PSSO-G2 | 12 ns | 9ns | 39 ns | 46 ns | 50A | 16V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 58W Tc | 200A | P-Channel | 3900pF @ 25V | 10.6m Ω @ 50A, 10V | 2.2V @ 85μA | 50A Tc | 59nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| FDY302NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdy302nz-datasheets-4303.pdf | SC-89, SOT-490 | 1.7mm | 780μm | 980μm | Lead Free | 3 | 8 Weeks | 30mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 625mW | 1 | FET General Purpose Power | 6 ns | 8ns | 2.4 ns | 8 ns | 600mA | 12V | SILICON | SWITCHING | 625mW Ta | 0.6A | 20V | N-Channel | 60pF @ 10V | 300m Ω @ 600mA, 4.5V | 1.5V @ 250μA | 600mA Ta | 1.1nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| AO3418 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | TO-236-3, SC-59, SOT-23-3 | Lead Free | 16 Weeks | 3 | No | 1.4W | 1 | 3.8A | 12V | 30V | 1.4W Ta | N-Channel | 270pF @ 15V | 60m Ω @ 3.8A, 10V | 1.8V @ 250μA | 3.8A Ta | 3.2nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R0-30YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn1r030ylc115-datasheets-3918.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 1.15MOhm | 3 | EAR99 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 137W | 1 | R-PSSO-G4 | 44 ns | 77ns | 60 ns | 108 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 272W Tc | 259 mJ | 30V | N-Channel | 6645pF @ 15V | 1.15m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 103.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SSM3J372R,LF | Toshiba Semiconductor and Storage | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 30V | 1W Ta | P-Channel | 560pF @ 15V | 42m Ω @ 5A, 10V | 1.2V @ 1mA | 6A Ta | 8.2nC @ 4.5V | 1.8V 10V | +12V, -6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J332R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | SOT-23-3 Flat Leads | 880μm | 3 | 16 Weeks | 3 | unknown | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | 150°C | 15 ns | 75 ns | -6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -500mV | 1W Ta | 6A | 0.042Ohm | -22V | P-Channel | 560pF @ 15V | 42m Ω @ 5A, 10V | 1.2V @ 1mA | 6A Ta | 8.2nC @ 4.5V | 1.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| ZVP4424GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp4424gta-datasheets-3183.pdf | -240V | -1A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 7.994566mg | No SVHC | 9Ohm | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2.5W | 1 | R-PDSO-G4 | 8 ns | 8ns | 20 ns | 26 ns | 480mA | 40V | SILICON | DRAIN | SWITCHING | 240V | 2.5W Ta | 0.48A | 1A | -240V | P-Channel | 200pF @ 25V | 9 Ω @ 200mA, 10V | 2V @ 1mA | 480mA Ta | 3.5V 10V | ±40V | ||||||||||||||||||||||||||||||
| IRLR2908TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlr2908trpbf-datasheets-3500.pdf | 80V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 28mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 1 | Single | 30 | 120W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 12 ns | 95ns | 55 ns | 36 ns | 30A | 16V | 80V | SILICON | DRAIN | SWITCHING | 1V | 120W Tc | TO-252AA | 250 mJ | 80V | N-Channel | 1890pF @ 25V | 1 V | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 30A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||
| IRFR1205TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr1205trpbf-datasheets-3432.pdf | 55V | 37A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.8mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 27mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 69W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.3 ns | 69ns | 60 ns | 47 ns | 37A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 107W Tc | TO-252AA | 98 ns | 20A | 55V | N-Channel | 1300pF @ 25V | 4 V | 27m Ω @ 26A, 10V | 4V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| STS10N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts10n3lh5-datasheets-3659.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 8 | NRND (Last Updated: 7 months ago) | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS10 | 8 | 30 | 1 | FET General Purpose Power | 4 ns | 22ns | 2.8 ns | 13 ns | 10A | 22V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Tc | 40A | 50 mJ | N-Channel | 475pF @ 25V | 21m Ω @ 5A, 10V | 1V @ 250μA | 10A Tc | 4.6nC @ 5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||
| DMN2004K-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn2004k7-datasheets-4206.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 14 Weeks | 7.994566mg | No SVHC | 550mOhm | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 350mW | 1 | FET General Purpose Powers | 150°C | 5.7 ns | 8.4ns | 37.6 ns | 59.4 ns | 540mA | 8V | SILICON | SWITCHING | 1.6V | 350mW Ta | 0.54A | 20 pF | 20V | N-Channel | 150pF @ 16V | 1.6 V | 550m Ω @ 540mA, 4.5V | 1V @ 250μA | 630mA Ta | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||
| SI4483ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4483adyt1ge3-datasheets-3642.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8.8mOhm | 8 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.9W | 1 | 70 ns | 150ns | 28 ns | 43 ns | 13.5A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.1V | 2.9W Ta 5.9W Tc | P-Channel | 3900pF @ 15V | 8.8m Ω @ 10A, 10V | 2.6V @ 250μA | 19.2A Tc | 135nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||
| NX2301P,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-nx2301p215-datasheets-3992.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 400mW Ta 2.8W Tc | TO-236AB | 0.19Ohm | P-Channel | 380pF @ 6V | 120m Ω @ 1A, 4.5V | 1.1V @ 250μA | 2A Ta | 6nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSS84W-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-bss84w7f-datasheets-3936.pdf | -50V | -130mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Lead Free | 3 | 16 Weeks | 6.010099mg | No SVHC | 10Ohm | 3 | yes | EAR99 | LOW CAPACITANCE | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 200mW | 1 | Other Transistors | 10 ns | 18 ns | -130mA | 20V | SILICON | SWITCHING | 50V | -1.6V | 200mW Ta | P-Channel | 45pF @ 25V | -1.6 V | 10 Ω @ 100mA, 5V | 2V @ 1mA | 130mA Ta | 5V | ±20V | |||||||||||||||||||||||||||||||
| FDS4465 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fds4465-datasheets-3220.pdf | -20V | -13.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 8.5MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 175°C | 20 ns | 24ns | 140 ns | 300 ns | 13.5A | 8V | -20V | SILICON | SWITCHING | 20V | -600mV | 2.5W Ta | 50A | -20V | P-Channel | 8237pF @ 10V | -600 mV | 8.5m Ω @ 13.5A, 4.5V | 1.5V @ 250μA | 13.5A Ta | 120nC @ 4.5V | 1.8V 4.5V | ±8V |
