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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Min Breakdown Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLML6401TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlml6401trpbf-datasheets-5260.pdf | -12V | -4.3A | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 50mOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 150°C | 11 ns | 32ns | 210 ns | 250 ns | -4.3A | 8V | -12V | SILICON | SWITCHING | 12V | -550mV | 1.3W Ta | -12V | P-Channel | 830pF @ 10V | -550 mV | 50m Ω @ 4.3A, 4.5V | 950mV @ 250μA | 4.3A Ta | 15nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||
| IRLML6402TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irlml6402trpbf-datasheets-5052.pdf | -20V | -3.7A | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 65mOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | No | Micro3 | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 150°C | 350 ns | 48ns | 381 ns | 588 ns | -3.7A | 12V | -20V | SILICON | SWITCHING | 20V | -550mV | 1.3W Ta | 22A | -20V | P-Channel | 633pF @ 10V | -550 mV | 65m Ω @ 3.7A, 4.5V | 1.2V @ 250μA | 3.7A Ta | 12nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||
| SSM3J356R,LF | Toshiba Semiconductor and Storage | $0.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | 1 | R-PDSO-F3 | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1W Ta | 2A | 0.4Ohm | P-Channel | 330pF @ 10V | 300m Ω @ 1A, 10V | 2V @ 1mA | 2A Ta | 8.3nC @ 10V | 4V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1012CR-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1012crt1ge3-datasheets-5114.pdf | SC-75, SOT-416 | 1.68mm | 800μm | 860μm | Lead Free | 3 | 14 Weeks | 2.012816mg | No SVHC | 396mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 240mW | 1 | 150°C | 11 ns | 16ns | 11 ns | 26 ns | 630mA | 8V | SILICON | SWITCHING | 400mV | 240mW Ta | 20V | N-Channel | 43pF @ 10V | 396m Ω @ 600mA, 4.5V | 1V @ 250μA | 2nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| NVR5198NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-nvr5198nlt1g-datasheets-5117.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | 3 | 1 | Single | 1.5W | FET General Purpose Powers | 5 ns | 7ns | 2 ns | 13 ns | 2.2A | 20V | 2.5V | 900mW Ta | 60V | N-Channel | 182pF @ 25V | 155m Ω @ 1A, 10V | 2.5V @ 250μA | 1.7A Ta | 5.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMV30UN2R | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pmv30un2r-datasheets-5122.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | Lead Free | 3 | 4 Weeks | 3 | Tin | DUAL | GULL WING | 3 | 1 | 1W | 1 | 150°C | 150°C | 7 ns | 26ns | 10 ns | 35 ns | 4.2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650mV | 490mW Ta 5W Tc | 20V | N-Channel | 655pF @ 10V | 32m Ω @ 4.2A, 4.5V | 900mV @ 250μA | 4.2A Ta | 11nC @ 4.5V | 1.2V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SSM3J338R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1W Ta | 6A | 0.0279Ohm | P-Channel | 1400pF @ 6V | 17.6m Ω @ 6A, 8V | 1V @ 1mA | 6A Ta | 19.5nC @ 4.5V | 1.8V 8V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17484F4 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 200μm | EAR99 | BOTTOM | NO LEAD | CSD17484 | 3 | Single | 1 | 3 ns | 1ns | 4 ns | 11 ns | 3A | 12V | SILICON | SWITCHING | 30V | 500mW Ta | 3A | 0.27Ohm | 2.9 pF | N-Channel | 195pF @ 15V | 121m Ω @ 500mA, 8V | 1.1V @ 250μA | 3A Ta | 1.2nC @ 4.5V | 1.8V 8V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLML5103TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlml5103trpbf-datasheets-4872.pdf | -30V | -610mA | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 600mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Micro(SOT23) | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | Single | 30 | 540mW | 1 | Other Transistors | Not Qualified | 10 ns | 8.2ns | 16 ns | 23 ns | -760mA | 20V | -30V | SILICON | SWITCHING | -1V | 540mW Ta | 30V | 0.76A | -30V | P-Channel | 75pF @ 25V | -1 V | 600m Ω @ 600mA, 10V | 1V @ 250μA | 760mA Ta | 5.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| NTR4170NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntr4170nt1g-datasheets-4905.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.11mm | 1.4mm | Lead Free | 3 | 14 Weeks | No SVHC | 55MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 3 | 1 | Single | 480mW | 1 | FET General Purpose Power | 150°C | 6.4 ns | 9.9ns | 3.5 ns | 15.1 ns | 2.4A | 12V | SILICON | SWITCHING | 1V | 480mW Ta | 30V | N-Channel | 432pF @ 15V | 1 V | 55m Ω @ 3.2A, 10V | 1.4V @ 250μA | 4.76nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
| IRLML2402TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlml2402trpbf-datasheets-4939.pdf | 20V | 1.2A | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 3.05mm | Lead Free | 3 | 12 Weeks | No SVHC | 250mOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | Micro3 | e3 | DUAL | GULL WING | 260 | Single | 30 | 540mW | 1 | FET General Purpose Power | Not Qualified | 2.5 ns | 9.5ns | 4.8 ns | 9.7 ns | 1.2A | 12V | 20V | SILICON | SWITCHING | 700mV | 540mW Ta | 20V | 20V | N-Channel | 110pF @ 15V | 700 mV | 250m Ω @ 930mA, 4.5V | 700mV @ 250μA | 1.2A Ta | 3.9nC @ 4.5V | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| DMN5L06TK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn5l06tk7-datasheets-4965.pdf | SOT-523 | 1.6mm | 750μm | 800μm | 3 | 14 Weeks | 2.012816mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 150mW | 1 | FET General Purpose Powers | 280mA | 20V | SILICON | SWITCHING | 150mW Ta | 0.28A | 3Ohm | 5 pF | 50V | N-Channel | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1.2V @ 250μA | 280mA Ta | 1.8V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMN3023L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3023l7-datasheets-5012.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 15 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 900mW | 150°C | 17 ns | 231 ns | 6.2A | 20V | 900mW Ta | 30V | N-Channel | 873pF @ 15V | 25m Ω @ 4A, 10V | 1.8V @ 250μA | 6.2A Ta | 18.4nC @ 10V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2304BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2304bdst1ge3-datasheets-5031.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 70mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | FET General Purpose Power | 150°C | 7.5 ns | 12.5ns | 12.5 ns | 19 ns | 3.2A | 20V | SILICON | SWITCHING | 2.25V | 750mW Ta | 2.6A | 30V | N-Channel | 225pF @ 15V | 70m Ω @ 2.5A, 10V | 3V @ 250μA | 2.6A Ta | 4nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTE4153NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-nta4153nt1g-datasheets-6401.pdf | 20V | 915mA | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 3 | 4 Weeks | No SVHC | 230MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 3 | Single | 40 | 300mW | 1 | FET General Purpose Power | 3.7 ns | 4.4ns | 4.4 ns | 25 ns | 915mA | 6V | SILICON | SWITCHING | 760mV | 300mW Tj | 20V | N-Channel | 110pF @ 16V | 760 mV | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 915mA Ta | 1.82nC @ 4.5V | 1.5V 4.5V | ±6V | |||||||||||||||||||||||||||||||||
| DMN3065LW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn3065lw7-datasheets-4748.pdf | SC-70, SOT-323 | 3 | 22 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | DMN3065 | 1 | Single | 1 | R-PDSO-G3 | 1.9 ns | 1.6ns | 2 ns | 10.3 ns | 4A | 12V | SILICON | SWITCHING | 30V | 30V | 770mW Ta | 4A | 0.052Ohm | N-Channel | 465pF @ 15V | 52m Ω @ 4A, 10V | 1.5V @ 250μA | 4A Ta | 11.7nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SI2301BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/vishaysiliconix-si2301bdst1e3-datasheets-4774.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 100MOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | Other Transistors | 150°C | 20 ns | 40ns | 40 ns | 30 ns | -2.2A | 8V | SILICON | 20V | -950mV | 700mW Ta | -20V | P-Channel | 375pF @ 6V | -950 mV | 100m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 2.2A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| BSH103,235 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/nexperiausainc-bsh103235-datasheets-4783.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 3 | EAR99 | Tin | No | 8541.21.00.75 | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 30 | 500mW | 1 | 2.5 ns | 3.5ns | 3.5 ns | 20 ns | 850mA | 8V | 30V | SILICON | SWITCHING | 540mW Ta | 0.85A | 0.5Ohm | 30V | N-Channel | 83pF @ 24V | 400m Ω @ 500mA, 4.5V | 400mV @ 1mA (Min) | 850mA Ta | 2.1nC @ 4.5V | 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| BSH103,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/nexperiausainc-bsh103235-datasheets-4783.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 6 Weeks | 3 | EAR99 | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | 750mW | 1 | 850mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 540mW Ta | 0.85A | 0.5Ohm | N-Channel | 83pF @ 24V | 400m Ω @ 500mA, 4.5V | 400mV @ 1mA (Min) | 850mA Ta | 2.1nC @ 4.5V | 2.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDV305N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fdv305n-datasheets-4694.pdf | 20V | 900mA | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 930μm | 1.3mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 220MOhm | 3 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 350mW | 1 | FET General Purpose Power | 4.5 ns | 7ns | 7 ns | 8 ns | 900mA | 12V | 20V | SILICON | SWITCHING | 1V | 350mW Ta | 0.9A | 20V | N-Channel | 109pF @ 10V | 220m Ω @ 900mA, 4.5V | 1.5V @ 250μA | 900mA Ta | 1.5nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| SI2302CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2302cdst1e3-datasheets-4810.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 57mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 710mW | 1 | FET General Purpose Powers | 150°C | 112pF | 8 ns | 7ns | 7 ns | 30 ns | 2.6A | 8V | SILICON | SWITCHING | 400mV | 710mW Ta | 20V | N-Channel | 57m Ω @ 3.6A, 4.5V | 850mV @ 250μA | 2.6A Ta | 5.5nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| DMN5L06WK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn5l06wk7-datasheets-4556.pdf | 50V | 280mA | SC-70, SOT-323 | 2.15mm | 1mm | 1.3mm | Lead Free | 3 | 16 Weeks | 6.010099mg | No SVHC | 2Ohm | 3 | yes | EAR99 | HIGH RELIABILITY, FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 250mW | 1 | FET General Purpose Powers | 300mA | 20V | SILICON | SWITCHING | 1V | 250mW Ta | 5 pF | 50V | N-Channel | 50pF @ 25V | 2 Ω @ 50mA, 5V | 1V @ 250μA | 300mA Ta | 1.8V 5V | ±20V | ||||||||||||||||||||||||||||||||||||
| SSM3K329R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 880μm | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | 1 | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 9.2 ns | 6.4 ns | 3.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 30V | N-Channel | 123pF @ 15V | 126m Ω @ 1A, 4V | 1V @ 1mA | 3.5A Ta | 1.5nC @ 4V | 1.8V 4V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS351AN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-nds351an-datasheets-8775.pdf | 30V | 1.2A | TO-236-3, SC-59, SOT-23-3 | 1.22mm | 3.05mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 160MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 500mW | 1 | FET General Purpose Power | Not Qualified | 150°C | 3 ns | 8ns | 8 ns | 16 ns | 1.2A | 20V | 30V | SILICON | SWITCHING | 2.1V | 500mW Ta | 30V | N-Channel | 145pF @ 15V | 2.1 V | 160m Ω @ 1.4A, 10V | 3V @ 250μA | 1.4A Ta | 1.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| DMP4065S-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/diodesincorporated-dmp4065s7-datasheets-4632.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | 3 | 23 Weeks | 3 | EAR99 | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | 260 | 1 | 30 | 720mW | 1 | 150°C | 3.6 ns | 36.3 ns | -2.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 720mW Ta | 0.08Ohm | -40V | P-Channel | 587pF @ 20V | 80m Ω @ 4.2A, 10V | 3V @ 250μA | 2.4A Ta | 12.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMN3042L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3042l7-datasheets-4569.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 5.8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 720mW Ta | 0.0265Ohm | 80 pF | N-Channel | 860pF @ 15V | 26.5m Ω @ 5.8A, 10V | 1.4V @ 250μA | 5.8A Ta | 20nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS331N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-nds331n-datasheets-4674.pdf | 20V | 1.3A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.22mm | 1.4mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 160mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 1 | Single | 500mW | 1 | FET General Purpose Power | 150°C | 5 ns | 25ns | 5 ns | 10 ns | 1.3A | 8V | SILICON | SWITCHING | 700mV | 500mW Ta | 20V | N-Channel | 162pF @ 10V | 700 mV | 160m Ω @ 1.5A, 4.5V | 1V @ 250μA | 1.3A Ta | 5nC @ 4.5V | 2.7V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| PMV45EN2R | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pmv45en2r-datasheets-4703.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 35mOhm | LOGIC LEVEL COMPATIBLE | IEC-60134 | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | 4.1A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 510mW Ta 5W Tc | TO-236AB | N-Channel | 209pF @ 15V | 42m Ω @ 4.1A, 10V | 2V @ 250μA | 4.1A Ta | 6.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS83PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-bss83ph6327xtsa1-datasheets-4732.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.3mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | PG-SOT23-3-5 | e3 | Halogen Free | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 360mW | 1 | 150°C | 23 ns | 71ns | 61 ns | 56 ns | -330mA | 20V | -60V | SILICON | 60V | -1.5V | 360mW Ta | 3Ohm | 9 pF | -60V | P-Channel | 78pF @ 25V | 2 Ω @ 330mA, 10V | 2V @ 80μA | 330mA Ta | 3.57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMN2056U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn2056u7-datasheets-4317.pdf | TO-236-3, SC-59, SOT-23-3 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 940mW | N-Channel | 339pF @ 10V | 38m Ω @ 3.6A, 4.5V | 1V @ 250μA | 4A Ta | 4.3nC @ 4.5V | 1.5V 4.5V | ±8V |
