Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BS170-D75Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-bs170d27z-datasheets-8952.pdf&product=onsemiconductor-bs170d75z-6387138 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 11 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | NO | BOTTOM | NOT SPECIFIED | BS170 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Ta | 0.5A | 5Ohm | 10 pF | N-Channel | 40pF @ 10V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV32UP,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-pmv32up215-datasheets-9154.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | 30 | 510mW | 1 | 13 ns | 21ns | 33 ns | 95 ns | 4A | 8V | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 510mW Ta | 4A | -20V | P-Channel | 1890pF @ 10V | 36m Ω @ 2.4A, 4.5V | 950mV @ 250μA | 4A Ta | 15.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI3401A-TP | Micro Commercial Co | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-si3401atp-datasheets-9087.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | 260 | 10 | 30V | 400mW | P-Channel | 1050pF @ 15V | 60m Ω @ 4.2A, 10V | 1.3V @ 250μA | 4.2A | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS205NH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bss205nh6327xtsa1-datasheets-9129.pdf | TO-236-3, SC-59, SOT-23-3 | 1.1mm | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | PG-SOT23 | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 500mW | 1 | Not Qualified | 150°C | 5.8 ns | 2.9ns | 11 ns | 2.5A | 12V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 700mV | 500mW Ta | 0.05Ohm | 24 pF | 20V | N-Channel | 419pF @ 10V | 50m Ω @ 2.5A, 4.5V | 1.2V @ 11μA | 2.5A Ta | 3.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| DMP21D0UT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp21d0ut7-datasheets-9209.pdf | SOT-523 | 1.7mm | 800μm | 850μm | Lead Free | 3 | 17 Weeks | 2.012816mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | Other Transistors | 7.1 ns | 8ns | 18.5 ns | 31.7 ns | 650mA | 8V | SILICON | SWITCHING | 20V | 20V | 240mW Ta | 0.59A | 0.495Ohm | P-Channel | 80pF @ 10V | 495m Ω @ 400mA, 4.5V | 700mV @ 250μA | 590mA Ta | 1.54nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| IRLML6246TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlml6246trpbf-datasheets-9214.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 46MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 1.3W | 1 | FET General Purpose Power | 3.6 ns | 4.9ns | 6 ns | 11 ns | 4.1A | 12V | SILICON | SWITCHING | 12V | 1.3W Ta | 13 ns | 20V | N-Channel | 290pF @ 16V | 46m Ω @ 4.1A, 4.5V | 1.1V @ 5μA | 4.1A Ta | 3.5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| BSH205G2R | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-bsh205g2r-datasheets-8960.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | Tin | DUAL | GULL WING | 3 | 1 | 5 ns | 14ns | 16 ns | 43 ns | 2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 480mW Ta | 2A | 0.17Ohm | P-Channel | 418pF @ 10V | 170m Ω @ 2A, 4.5V | 950mV @ 250μA | 2A Ta | 6.5nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTR1P02LT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-ntr1p02lt1g-datasheets-8804.pdf | -20V | -1.3A | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 940μm | 1.3mm | Lead Free | 3 | 14 Weeks | No SVHC | 220MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 400mW | 1 | Other Transistors | 7 ns | 15ns | 15 ns | 18 ns | 1.3A | 12V | SILICON | SWITCHING | 20V | -1V | 400mW Ta | -20V | P-Channel | 225pF @ 5V | 220m Ω @ 750mA, 4.5V | 1.25V @ 250μA | 1.3A Ta | 5.5nC @ 4V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||
| BS170-D27Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-bs170d27z-datasheets-8952.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 11 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | NO | BOTTOM | NOT SPECIFIED | BS170 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Ta | 0.5A | 5Ohm | 10 pF | N-Channel | 40pF @ 10V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PMF370XN,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/nexperiausainc-pmf370xn115-datasheets-9002.pdf | SC-70, SOT-323 | 6 Weeks | 3 | 560mW | SC-70 | 870mA | 30V | 560mW Tc | 370mOhm | N-Channel | 37pF @ 25V | 440mOhm @ 200mA, 4.5V | 1.5V @ 250μA | 870mA Tc | 0.65nC @ 4.5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS806NEH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bss806neh6327xtsa1-datasheets-9035.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 10 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 500mW | 1 | 7.5 ns | 9.9ns | 3.7 ns | 12 ns | 2.3A | 8V | 20V | SILICON | 500mW Ta | 0.057Ohm | 29 pF | N-Channel | 529pF @ 10V | 57m Ω @ 2.3A, 2.5V | 0.75V @ 11μA | 2.3A Ta | 1.7nC @ 2.5V | 1.8V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| NTR5198NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntr5198nlt1g-datasheets-8814.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 10 Weeks | 1.437803g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | DUAL | GULL WING | 260 | 3 | 1 | Single | 1.5W | 1 | FET General Purpose Power | 5 ns | 7ns | 2 ns | 13 ns | 2.2A | 20V | SILICON | 2.5V | 900mW Ta | 0.205Ohm | 60V | N-Channel | 182pF @ 25V | 155m Ω @ 1A, 10V | 2.5V @ 250μA | 1.7A Ta | 2.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| DMG6402LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg6402lvt7-datasheets-8862.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 900μm | 1.6mm | 23 Weeks | No SVHC | 26 | EAR99 | No | e3 | Matte Tin (Sn) | 260 | 1 | Single | 30 | FET General Purpose Power | 3.4 ns | 6.2ns | 2.8 ns | 13.9 ns | 6A | 20V | 30V | 1.75W Ta | 6A | N-Channel | 498pF @ 15V | 30m Ω @ 7A, 10V | 2V @ 250μA | 6A Ta | 11.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMN3065LW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn3065lw7-datasheets-4748.pdf | SC-70, SOT-323 | 465pF | 3 | 22 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | DMN3065 | 1 | Single | 1 | R-PDSO-G3 | 1.9 ns | 1.6ns | 2 ns | 10.3 ns | 4A | 12V | SILICON | SWITCHING | 770mW Ta | 4A | 0.052Ohm | 30V | N-Channel | 465pF @ 15V | 52m Ω @ 4A, 10V | 1.5V @ 250μA | 4A Ta | 11.7nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| AO3413 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-236-3, SC-59, SOT-23-3 | 3 | 18 Weeks | 3 | EAR99 | No | DUAL | GULL WING | 3 | 1.4W | 1 | 3A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.4W Ta | 0.08Ohm | P-Channel | 540pF @ 10V | 97m Ω @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 6.1nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP32D4SW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp32d4sw7-datasheets-8946.pdf | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Lead Free | 3 | 16 Weeks | 6.010099mg | No SVHC | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | 30 | 1 | Other Transistors | 9.86 ns | 11.5ns | 21.9 ns | 31.8 ns | 250mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 300mW Ta | 0.25A | P-Channel | 51.16pF @ 15V | 2.4 Ω @ 500mA, 10V | 2.4V @ 250μA | 250mA Ta | 1.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PMV48XP,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-pmv48xp215-datasheets-8768.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 3 | 510mW | 1 | 11 ns | 13ns | 23 ns | 61 ns | 3.5A | 12V | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 510mW Ta | 0.055Ohm | -20V | P-Channel | 1000pF @ 10V | 55m Ω @ 2.4A, 4.5V | 1.25V @ 250μA | 3.5A Ta | 11nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| DMN31D5UFZ-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn31d5ufz7b-datasheets-8783.pdf | 3-XFDFN | 3 | 15 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 3.1 ns | 2ns | 6.9 ns | 20 ns | 220mA | 12V | SILICON | DRAIN | SWITCHING | 393mW Ta | 0.22A | 30V | N-Channel | 22.2pF @ 15V | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 220mA Ta | 0.35nC @ 4.5V | 1.2V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| AO3424 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | 3 | 16 Weeks | 3 | yes | EAR99 | DUAL | GULL WING | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 1.4W | 1 | 150°C | 3.5 ns | 17.5 ns | 3.8A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1V | 1.4W Ta | 0.055Ohm | 25 pF | 30V | N-Channel | 270pF @ 15V | 80m Ω @ 2A, 10V | 1.8V @ 250μA | 3.8A Ta | 3.2nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMP3A13FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zxmp3a13fta-datasheets-6713.pdf | -30V | -1.6A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 210mOhm | 3 | yes | EAR99 | LOW THRESHOLD | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 806mW | 1 | Other Transistors | 1.5 ns | 3ns | 3 ns | 11.1 ns | 1.6A | 20V | SILICON | SWITCHING | 30V | -1V | 625mW Ta | P-Channel | 206pF @ 15V | 210m Ω @ 1.4A, 10V | 1V @ 250μA | 1.4A Ta | 6.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SSM6J507NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 6-WDFN Exposed Pad | 12 Weeks | 10A | 30V | 1.25W Ta | P-Channel | 1150pF @ 15V | 20m Ω @ 4A, 10V | 2.2V @ 250μA | 10A Ta | 20.4nC @ 4.5V | 4V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD417 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/alphaomegasemiconductor-aod417-datasheets-9455.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | 3 | 2.5W | 1 | 25A | 20V | 30V | 2.5W Ta 50W Tc | P-Channel | 920pF @ 15V | 34m Ω @ 20A, 10V | 3V @ 250μA | 25A Ta | 16.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA483DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia483djt1ge3-datasheets-7304.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | 3 | 14 Weeks | 6 | yes | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 6 | 1 | Single | NOT SPECIFIED | 3.5W | 1 | Other Transistors | 150°C | S-XDSO-N3 | 10 ns | 60ns | 20 ns | 27 ns | -10A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.5W Ta 19W Tc | 40A | -30V | P-Channel | 1550pF @ 15V | 21m Ω @ 5A, 10V | 2.2V @ 250μA | 12A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SSM3K341R,LF | Toshiba Semiconductor and Storage | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | DUAL | 1 | R-PDSO-F3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.2W Ta | 6A | 24A | 0.036Ohm | 28.9 mJ | N-Channel | 550pF @ 10V | 36m Ω @ 5A, 10V | 2.5V @ 100μA | 6A Ta | 9.3nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1050X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1050xt1ge3-datasheets-6858.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 14 Weeks | 32.006612mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 1 | FET General Purpose Power | 6.8 ns | 35ns | 35 ns | 26 ns | 1.34A | 5V | SILICON | SWITCHING | 8V | 8V | 236mW Ta | 6A | N-Channel | 585pF @ 4V | 5 V | 86m Ω @ 1.34A, 4.5V | 900mV @ 250μA | 1.34A Ta | 11.6nC @ 5V | 1.5V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||
| DMP2123L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp2123l7-datasheets-5634.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 15 Weeks | 7.994566mg | No SVHC | 72mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.4W | 1 | Other Transistors | 12 ns | 20ns | 41 ns | 38 ns | 3A | 12V | SILICON | 20V | 1.4W Ta | 3A | -20V | P-Channel | 443pF @ 16V | 72m Ω @ 3.5A, 4.5V | 1.25V @ 250μA | 3A Ta | 7.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
| SI2342DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2342dst1ge3-datasheets-6875.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | 30 | 1.3W | 1 | FET General Purpose Powers | 150°C | 6 ns | 14ns | 25 ns | 65 ns | 6A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800mV | 2.5W Tc | 6A | 8V | N-Channel | 1070pF @ 4V | 17m Ω @ 7.2A, 4.5V | 800mV @ 250μA | 6A Tc | 15.8nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||
| SI1401EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si1401edht1ge3-datasheets-6120.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 34MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.6W | 1 | Other Transistors | 4A | 10V | SILICON | SWITCHING | 12V | 400mV | 1.6W Ta 2.8W Tc | 4A | P-Channel | 34m Ω @ 5.5A, 4.5V | 1V @ 250μA | 4A Tc | 36nC @ 8V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| SQ2318AES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2318aest1ge3-datasheets-6748.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 12 Weeks | No SVHC | 3 | EAR99 | Tin | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 7.5 ns | 8.4ns | 5.7 ns | 12 ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 2V | 3W Tc | 8A | 46 pF | N-Channel | 555pF @ 10V | 31m Ω @ 6A, 10V | 2.5V @ 250μA | 8A Tc | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SSM3K361R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | SOT-23-3 Flat Leads | 3 | 12 Weeks | yes | unknown | AEC-Q101 | DUAL | 1 | R-PDSO-F3 | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 100V | 100V | 1.2W Ta | 14A | 0.069Ohm | 9.1 mJ | N-Channel | 430pF @ 15V | 69m Ω @ 2A, 10V | 2.5V @ 100μA | 3.5A Ta | 3.2nC @ 4.5V | 4.5V 10V | ±20V |
