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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMN601TK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmn601tk7-datasheets-9991.pdf | 60V | 300mA | SOT-523 | 1.6mm | 750μm | 800μm | Lead Free | 3 | 14 Weeks | 2.012816mg | No SVHC | 3 | yes | EAR99 | LOW CAPACITANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 150mW | 1 | FET General Purpose Power | 300mA | 20V | SILICON | SWITCHING | 150mW Ta | 2Ohm | 5 pF | 60V | N-Channel | 50pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 300mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SSM3J358R,LF | Toshiba Semiconductor and Storage | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | SOT-23-3 Flat Leads | 12 Weeks | SOT-23F | 20V | 1W Ta | P-Channel | 1331pF @ 10V | 22.1mOhm @ 6A, 8V | 1V @ 1mA | 6A Ta | 38.5nC @ 8V | 1.8V 8V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS123W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-bss123w-datasheets-0035.pdf | SC-70, SOT-323 | 3 | 13 Weeks | 30mg | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | 8541.29.00.95 | DUAL | GULL WING | 260 | Single | NOT SPECIFIED | 1 | R-PDSO-G3 | 170mA | SILICON | SWITCHING | 100V | 100V | 200mW Ta | 0.17A | 10Ohm | N-Channel | 71pF @ 25V | 6 Ω @ 170mA, 10V | 2V @ 1mA | 170mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV27UPER | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmv27uper-datasheets-0043.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 27mOhm | AEC-Q101; IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 490mW Ta 4.15W Tc | TO-236AB | P-Channel | 1820pF @ 10V | 32m Ω @ 4.5A, 4.5V | 950mV @ 250μA | 4.5A Ta | 22.1nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJS4151PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntjs4151pt1g-datasheets-0051.pdf | -20V | -3.3A | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 12 Weeks | No SVHC | 47MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 6 | Single | 40 | 1W | 1 | FET General Purpose Power | 850 ps | 1.7ns | 4.2 ns | 2.7 ns | 4.2A | 12V | SILICON | SWITCHING | 20V | -400mV | 1W Ta | -20V | P-Channel | 850pF @ 10V | 60m Ω @ 3.3A, 4.5V | 1.2V @ 250μA | 3.3A Ta | 10nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
| BSH203,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-bsh203215-datasheets-0068.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1mm | 1.4mm | Lead Free | 3 | 4 Weeks | No SVHC | 900mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 30 | 417mW | 1 | 2 ns | 4.5ns | 4.5 ns | 45 ns | -470mA | 8V | -30V | -30V | SILICON | SWITCHING | -680mV | 417mW Ta | 0.47A | 30V | P-Channel | 110pF @ 24V | -680 mV | 900m Ω @ 280mA, 4.5V | 680mV @ 1mA | 470mA Ta | 2.2nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| DMN3067LW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn3067lw7-datasheets-9025.pdf | SC-70, SOT-323 | 16 Weeks | 6.010099mg | EAR99 | e3 | Matte Tin (Sn) | 260 | 1 | Single | 30 | 3.8 ns | 5.2ns | 6.1 ns | 15 ns | 2.6A | 12V | 30V | 500mW Ta | N-Channel | 447pF @ 10V | 67m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2.6A Ta | 4.6nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTR3C21NZT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntr3c21nzt1g-datasheets-9910.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | ULTRA LOW RESISTANCE | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 7 ns | 14ns | 4.67 μs | 420 ns | 3.6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 470mW Ta | 0.024Ohm | N-Channel | 1540pF @ 16V | 24m Ω @ 5A, 4.5V | 1V @ 250μA | 3.6A Ta | 17.8nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| PMV50XPR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/nexperiausainc-pmv50xpr-datasheets-9850.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 3.6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 490mW Ta 4.63W Tc | TO-236AB | 0.06Ohm | P-Channel | 744pF @ 20V | 60m Ω @ 3.6A, 4.5V | 900mV @ 250μA | 3.6A Ta | 12nC @ 4.5V | 1.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6K217FE,LF | Toshiba Semiconductor and Storage | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-563, SOT-666 | 12 Weeks | 6 | ES6 | 130pF | 13 ns | 8 ns | 1.8A | 12V | 40V | 500mW Ta | N-Channel | 130pF @ 10V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.8A Ta | 1.1nC @ 4.2V | 195 mΩ | 1.8V 8V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV20XNER | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmv20xner-datasheets-9723.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | IEC-60134 | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | 5.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 510mW Ta 6.94W Tc | TO-236AB | 0.023Ohm | N-Channel | 1150pF @ 15V | 23m Ω @ 5.7A, 4.5V | 900mV @ 250μA | 5.7A Ta | 18.6nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTJS3157NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntjs3157nt1g-datasheets-9949.pdf | 20V | 3.2A | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 6 | 8 Weeks | 45MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 6 | Single | 40 | 1W | 1 | FET General Purpose Power | 6 ns | 12ns | 11 ns | 21 ns | 4mA | 8V | SILICON | SWITCHING | 1W Ta | 20V | N-Channel | 500pF @ 10V | 400 mV | 60m Ω @ 4A, 4.5V | 1V @ 250μA | 3.2A Ta | 15nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| AO3402 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/alphaomegasemiconductor-ao3402-datasheets-9852.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | No | DUAL | GULL WING | 3 | 1.4W | 1 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.4W Ta | 4A | 0.052Ohm | 25 pF | N-Channel | 390pF @ 15V | 55m Ω @ 4A, 10V | 1.4V @ 250μA | 4A Ta | 4.34nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS127SSN-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-bss127ssn7-datasheets-9980.pdf | TO-236-3, SC-59, SOT-23-3 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 3 | 18 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1.25W | 1 | FET General Purpose Power | 5 ns | 7.2ns | 168 ns | 28.7 ns | 50mA | 20V | SILICON | SWITCHING | 610mW Ta | 0.045A | 600V | N-Channel | 21.8pF @ 25V | 160 Ω @ 16mA, 10V | 4.5V @ 250μA | 50mA Ta | 1.08nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| CSD25481F4 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | -0.95 | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 6 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | BOTTOM | NO LEAD | 260 | CSD25481 | Single | NOT SPECIFIED | 500mW | 1 | Other Transistors | 4.1 ns | 3.6ns | 6.7 ns | 16.9 ns | 2.5A | -12V | 20V | 500mW Ta | -20V | P-Channel | 189pF @ 10V | 88m Ω @ 500mA, 8V | 1.2V @ 250μA | 2.5A Ta | 0.913nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMP58D0LFB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp58d0lfb7-datasheets-9204.pdf | 3-UFDFN | 3 | 19 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 3 | 1 | 40 | 1.22W | 1 | Other Transistors | 30.7 ns | 84.1ns | 32.2 ns | 201.8 ns | 310mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 470mW Ta | 8Ohm | -50V | P-Channel | 27pF @ 25V | 8 Ω @ 100mA, 5V | 2.1V @ 250μA | 180mA Ta | 2.5V 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PMXB360ENEAZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-pmxb360eneaz-datasheets-9787.pdf | 3-XDFN Exposed Pad | 3 | 4 Weeks | 3 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | YES | DUAL | 3 | 1 | 2 ns | 3.5ns | 3 ns | 9 ns | 1.1A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400mW Ta 6.25W Tc | 0.45Ohm | N-Channel | 130pF @ 40V | 450m Ω @ 1.1A, 10V | 2.7V @ 250μA | 1.1A Ta | 4.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K333R,LF | Toshiba Semiconductor and Storage | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | SOT-23-3 Flat Leads | 3 | 16 Weeks | unknown | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1W | 1 | R-PDSO-F3 | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 6A | 0.028Ohm | 30V | N-Channel | 436pF @ 15V | 28m Ω @ 5A, 10V | 2.5V @ 100μA | 6A Ta | 3.4nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25484F4 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 200μm | EAR99 | BOTTOM | NO LEAD | CSD25484 | 3 | Single | 1 | 9.5 ns | 5ns | 8.5 ns | 18 ns | 2.5A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 500mW Ta | 0.18Ohm | 7.2 pF | P-Channel | 230pF @ 10V | 94m Ω @ 500mA, 8V | 1.2V @ 250μA | 2.5A Ta | 1.42nC @ 4.5V | 1.8V 8V | -12V | ||||||||||||||||||||||||||||||||||||||||||
| DMN2300U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2300u7-datasheets-9818.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 3.5 ns | 2.8ns | 13 ns | 38 ns | 1.4A | 8V | SILICON | SWITCHING | 430mW Ta | 20V | N-Channel | 64.3pF @ 25V | 175m Ω @ 300mA, 4.5V | 950mV @ 250μA | 1.24A Ta | 1.6nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| BSH202,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/nexperiausainc-bsh202215-datasheets-9814.pdf | TO-236-3, SC-59, SOT-23-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 4 Weeks | 4.535924g | No SVHC | 900mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 30 | 417mW | 1 | 2 ns | 4.5ns | 4.5 ns | 45 ns | -520mA | 20V | -30V | -30V | SILICON | SWITCHING | -1.9V | 417mW Ta | 0.52A | 30V | P-Channel | 80pF @ 24V | -1.9 V | 900m Ω @ 280mA, 10V | 1.9V @ 1mA | 520mA Ta | 2.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTR4171PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntr4171pt1g-datasheets-9867.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 16 Weeks | No SVHC | 75MOhm | 3 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | GULL WING | 3 | Single | 1.25W | 1 | Other Transistors | 9 ns | 16ns | 22 ns | 32 ns | -2.2A | 12V | SILICON | SWITCHING | 30V | -1.15V | 480mW Ta | -30V | P-Channel | 720pF @ 15V | -1.15 V | 75m Ω @ 2.2A, 10V | 1.4V @ 250μA | 2.2A Ta | 15.6nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
| BSS215PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bss215ph6327xtsa1-datasheets-9860.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 500mW | 1 | Not Qualified | 9.7ns | 1.5A | 12V | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 500mW Ta | P-Channel | 346pF @ 15V | 150m Ω @ 1.5A, 4.5V | 1.2V @ 11μA | 1.5A Ta | 3.6nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| DMP3105LVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmp3105lvt7-datasheets-9172.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 900μm | 1.6mm | Lead Free | 6 | 15 Weeks | No SVHC | 75mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 1.75W | 1 | Other Transistors | 9.7 ns | 17.7ns | 64 ns | 269 ns | 3.9A | 12V | SILICON | SWITCHING | 30V | 30V | 1.15W Ta | P-Channel | 839pF @ 15V | 75m Ω @ 4.2A, 10V | 1.5V @ 250μA | 3.1A Ta | 19.8nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
| DMG301NU-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmg301nu13-datasheets-9334.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | DMG301 | 260mA | 25V | 320mW Ta | N-Channel | 27.9pF @ 10V | 4 Ω @ 400mA, 4.5V | 1.1V @ 250μA | 260mA Ta | 0.36nC @ 4.5V | 2.7V 4.5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDY100PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdy100pz-datasheets-9728.pdf | SC-89, SOT-490 | 1.7mm | 780μm | 980μm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 1.2Ohm | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | ESD PROTECTION | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 625mW | 1 | Other Transistors | 6 ns | 13ns | 13 ns | 8 ns | 350mA | 8V | -20V | SILICON | SWITCHING | 20V | -1V | 625mW Ta | -20V | P-Channel | 100pF @ 10V | -1 V | 1.2 Ω @ 350mA, 4.5V | 1.5V @ 250μA | 350mA Ta | 1.4nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| BSS127H6327XTSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bss127h6327xtsa2-datasheets-9735.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500mW | 1 | Not Qualified | 6.1 ns | 9.7ns | 14 ns | 21mA | 20V | 600V | SILICON | 500mW Ta | 600Ohm | N-Channel | 28pF @ 25V | 500 Ω @ 16mA, 10V | 2.6V @ 8μA | 21mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMG2301LK-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/diodesincorporated-dmg2301lk7-datasheets-9534.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 17 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 2.4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 840mW Ta | 0.21Ohm | P-Channel | 156pF @ 6V | 160m Ω @ 1A, 4.5V | 1V @ 250μA | 2.4A Ta | 3.4nC @ 10V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDY301NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdy301nz-datasheets-9561.pdf | SC-89, SOT-490 | 1.7mm | 780μm | 980μm | Lead Free | 3 | 8 Weeks | 30mg | No SVHC | 5Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ESD PROTECTION | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 625mW | 1 | FET General Purpose Power | 6 ns | 8ns | 8 ns | 8 ns | 200mA | 12V | SILICON | SWITCHING | 1.5V | 625mW Ta | 0.2A | 20V | N-Channel | 60pF @ 10V | 5 Ω @ 200mA, 4.5V | 1.5V @ 250μA | 200mA Ta | 1.1nC @ 4.5V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| DMP31D0U-7 | Diodes Incorporated | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp31d0u7-datasheets-9516.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | 3 | 15 Weeks | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | GULL WING | 260 | Single | 40 | 1 | Other Transistors | 4.98 ns | 5.85ns | 16.64 ns | 35.71 ns | 530mA | 8V | SILICON | SWITCHING | 30V | 450mW Ta | 0.67A | 1Ohm | P-Channel | 76pF @ 15V | 1 Ω @ 400mA, 4.5V | 1.1V @ 250μA | 530mA Ta | 0.9nC @ 4.5V | 1.8V 4.5V | ±8V |
