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ContactNTR4171PT1G
NTR4171PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTR4171PT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 1529
- Description: NTR4171PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 18 hours ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 75MOhm |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 480mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 15.6nC @ 10V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | -2.2A |
| Threshold Voltage | -1.15V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -30V |
| Nominal Vgs | -1.15 V |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTR4171PT1G Description
NTR4171PT1G belongs to the family of P-channel power MOSFETs manufactured by ON Semiconductor for low RDS (on) at low gate voltage and low threshold voltage. Moreover, it provides high power and current handling capability. Based on its specific characteristics, it is well suited for load switch, as well as battery and load management applications.
NTR4171PT1G Features
Low RDS (on) at a low gate voltage
Low threshold voltage
High power and current handling capability
Available in the SOT-23 package
NTR4171PT1G Applications
Load switch
Battery and load management
