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NTJS4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTJS4151PT1G
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 3571
- Description: NTJS4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 4.2 ns |
| Turn-Off Delay Time | 2.7 ns |
| Continuous Drain Current (ID) | 4.2A |
| Threshold Voltage | -400mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Height | 1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 47MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3.3A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 850 ps |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Rise Time | 1.7ns |
| Drain to Source Voltage (Vdss) | 20V |
NTJS4151PT1G Description
NTJS4151PT1G is a member of the family of N-channel power MOSFETs developed by ON Semiconductor based on the leading trench technology for low RDS (on) extending battery life. Moreover, it is able to provide fast switching for increased circuit efficiency. Due to its specific features, NTJS4151PT1G can be used for high-side load switches, cell phones, digital cameras, and more.
NTJS4151PT1G Features
leading trench technology
low RDS (on)
fast switching speed
increased circuit efficiency
Supplied in the SC-88 (SOT-363) package
NTJS4151PT1G Applications
Cell phones
Digital cameras
MP3s and PDAs
High side load switch
