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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| LND150N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microchiptechnology-lnd150n8g-datasheets-2839.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 5 Weeks | 52.786812mg | No SVHC | 4 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | FLAT | 260 | 1 | Single | 40 | 1.2W | 1 | R-PSSO-F3 | 90 ns | 450ns | 450 ns | 100 ns | 30mA | 20V | SILICON | SOURCE | SWITCHING | 1.6W Ta | 0.03A | 500V | N-Channel | 10pF @ 25V | 1000 Ω @ 500μA, 0V | 30mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSZ067N06LS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-bsz067n06ls3gatma1-datasheets-2871.pdf | 8-PowerVDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | S-PDSO-N5 | 26ns | 14A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | N-Channel | 5100pF @ 30V | 6.7m Ω @ 20A, 10V | 2.2V @ 35μA | 14A Ta 20A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R0-40YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn4r040ys115-datasheets-1828.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 12 Weeks | 453.59237mg | 5.6MOhm | 4 | EAR99 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 40 | 106W | 1 | 18 ns | 19ns | 12 ns | 34 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | 77 mJ | 40V | N-Channel | 2410pF @ 20V | 4.2m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4425BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4425bdyt1e3-datasheets-2582.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 12mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 20 | 1.5W | 1 | Other Transistors | 15 ns | 13ns | 13 ns | 100 ns | -11.4A | 20V | SILICON | SWITCHING | 30V | -400mV | 1.5W Ta | -30V | P-Channel | -400 mV | 12m Ω @ 11.4A, 10V | 3V @ 250μA | 8.8A Ta | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| CSD17575Q3 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD17575 | Single | NOT SPECIFIED | 1 | 4 ns | 10ns | 3 ns | 20 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 108W Tc | 27A | 240A | 0.0032Ohm | 204 pF | 115 mJ | N-Channel | 4420pF @ 15V | 2.3m Ω @ 25A, 10V | 1.8V @ 250μA | 60A Ta | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDD6637 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd6637-datasheets-2622.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.517mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 11.6MOhm | 3 | ACTIVE (Last Updated: 15 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 1 | Single | 1.3W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 18 ns | 10ns | 36 ns | 62 ns | -13A | 25V | SILICON | DRAIN | SWITCHING | 35V | -1.6V | 3.1W Ta 57W Tc | 55A | -35V | P-Channel | 2370pF @ 20V | -1.6 V | 11.6m Ω @ 14A, 10V | 3V @ 250μA | 13A Ta 55A Tc | 63nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| BUK9217-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~185°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk921775b118-datasheets-2663.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE. | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 167W | 1 | R-PSSO-G2 | 30 ns | 102ns | 58 ns | 101 ns | 64A | 15V | 75V | SILICON | DRAIN | SWITCHING | 167W Tc | TO-252AA | 256A | 0.017Ohm | 147 mJ | 75V | N-Channel | 4029pF @ 25V | 15m Ω @ 25A, 10V | 2V @ 1mA | 64A Tc | 35nC @ 5V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| NTTFS5C454NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-nttfs5c454nltag-datasheets-2602.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | 85A | 40V | 2V | 3.2W Ta 55W Tc | N-Channel | 1600pF @ 25V | 3.8m Ω @ 20A, 10V | 2V @ 250μA | 20A Ta 85A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS892ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis892adnt1ge3-datasheets-2688.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 5 | 14 Weeks | Unknown | 33MOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | FET General Purpose Powers | 150°C | S-PDSO-C5 | 10 ns | 16 ns | 7.4A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 3.7W Ta 52W Tc | 40A | 5 mJ | 100V | N-Channel | 550pF @ 50V | 33m Ω @ 10A, 10V | 3V @ 250μA | 28A Tc | 19.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD18534Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | 260 | CSD18534 | Single | 3.1W | 1 | FET General Purpose Power | 5.2 ns | 5.5ns | 2 ns | 15 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 3.1W Ta 77W Tc | 229A | 6.5 pF | 60V | N-Channel | 1770pF @ 30V | 1.9 V | 9.8m Ω @ 14A, 10V | 2.3V @ 250μA | 13A Ta 50A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDD4685 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd4685-datasheets-2705.pdf | -40V | -8.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 27MOhm | 3 | ACTIVE (Last Updated: 7 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | FDD4685 | Single | 69W | 1 | Other Transistors | R-PSSO-G2 | 8 ns | 15ns | 14 ns | 34 ns | 8.4mA | 20V | -40V | SILICON | DRAIN | 40V | -1.6V | 69W Tc | 40A | -40V | P-Channel | 2380pF @ 20V | -1.6 V | 27m Ω @ 8.4A, 10V | 3V @ 250μA | 8.4A Ta 32A Tc | 27nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPD90N04S404ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd90n04s404atma1-datasheets-2681.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 11ns | 9 ns | 90A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W Tc | 0.0041Ohm | 95 mJ | N-Channel | 3440pF @ 25V | 4.1m Ω @ 90A, 10V | 4V @ 35.2mA | 90A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18504Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | 260 | CSD18504 | 1 | Single | 3.1W | 1 | FET General Purpose Powers | 150°C | 3.2 ns | 6.8ns | 2 ns | 12 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 3.1W Ta 77W Tc | 50A | 275A | 9.6 pF | 92 mJ | 40V | N-Channel | 1656pF @ 20V | 6.6m Ω @ 17A, 10V | 2.4V @ 250μA | 15A Ta 50A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF9317TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf9317trpbf-datasheets-0964.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 10.2MOhm | 8 | EAR99 | Tin | No | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 19 ns | 64ns | 120 ns | 160 ns | -16A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | 330 mJ | -30V | P-Channel | 2820pF @ 15V | -1.8 V | 6.6m Ω @ 16A, 10V | 2.4V @ 50μA | 16A Ta | 92nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STD5N20LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std5n20lt4-datasheets-2465.pdf | 200V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.63mm | 6.2mm | Lead Free | 2 | No SVHC | 700mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD5N | 3 | 1 | Single | 30 | 33W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 11.5 ns | 21.5ns | 15.5 ns | 14 ns | 5A | 20V | 200V | SILICON | DRAIN | SWITCHING | 2.5V | 33W Tc | 5A | 20A | 200V | N-Channel | 242pF @ 25V | 2.5 V | 700m Ω @ 2.5A, 5V | 2.5V @ 50μA | 5A Tc | 6nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||
| AOD403 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | No | SINGLE | GULL WING | 3 | 90W | 1 | Other Transistors | R-PSSO-G2 | 70A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 2.5W Ta 90W Tc | 200A | 0.008Ohm | P-Channel | 5300pF @ 15V | 6m Ω @ 20A, 20V | 3.5V @ 250μA | 15A Ta 70A Tc | 120nC @ 10V | 10V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17551Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17551 | 3W | 1 | FET General Purpose Power | 9.1 ns | 15.5ns | 4.3 ns | 11.9 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.7V | 3W Ta | 24 pF | N-Channel | 1272pF @ 15V | 8.8m Ω @ 11A, 10V | 2.2V @ 250μA | 48A Tc | 7.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMC6675BZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc6675bz-datasheets-2325.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 23 Weeks | 200mg | No SVHC | 14.4MOhm | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.3W | 1 | Other Transistors | S-PDSO-N5 | 11 ns | 10ns | 26 ns | 44 ns | 9.5A | 25V | SILICON | DRAIN | SWITCHING | 30V | -1.9V | 2.3W Ta 36W Tc | 40A | 32A | -30V | P-Channel | 2865pF @ 15V | 14.4m Ω @ 9.5A, 10V | 3V @ 250μA | 9.5A Ta 20A Tc | 65nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| STL20N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/stmicroelectronics-stl20n6f7-datasheets-2302.pdf | 8-PowerVDFN | 5 | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | compliant | DUAL | FLAT | NOT SPECIFIED | STL20 | NOT SPECIFIED | 1 | S-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 3W Ta 78W Tc | 400A | 0.0054Ohm | N-Channel | 1600pF @ 25V | 5.4m Ω @ 10A, 10V | 4V @ 250μA | 100A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2337DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2337dst1e3-datasheets-2246.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 270mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 760mW | 1 | Other Transistors | 150°C | 10 ns | 15ns | 15 ns | 20 ns | -2.2A | 20V | SILICON | SWITCHING | 80V | -2V | 760mW Ta 2.5W Tc | -80V | P-Channel | 500pF @ 40V | 270m Ω @ 1.2A, 10V | 4V @ 250μA | 2.2A Tc | 17nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIS407DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis407dnt1ge3-datasheets-2330.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | Unknown | 9.5mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.6W | 1 | Other Transistors | 150°C | S-XDSO-C5 | 23 ns | 28ns | 38 ns | 92 ns | -25A | -8V | SILICON | DRAIN | SWITCHING | 20V | -1V | 3.6W Ta 33W Tc | 40A | 20 mJ | -20V | P-Channel | 2760pF @ 10V | 9.5m Ω @ 15.3A, 4.5V | 1V @ 250μA | 25A Tc | 93.8nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| FDN86246 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdn86246-datasheets-1640.pdf | TO-236-3, SC-59, SOT-23-3 | 1.4mm | 940μm | 2.92mm | 3 | 8 Weeks | 30mg | No SVHC | 3 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.5W | 1 | FET General Purpose Power | 4.5 ns | 1.1ns | 2.9 ns | 8 ns | 1.6A | 20V | SILICON | SWITCHING | 3.4V | 1.5W Ta | 5 pF | 150V | N-Channel | 225pF @ 75V | 3.4 V | 261m Ω @ 1.6A, 10V | 4V @ 250μA | 1.6A Ta | 5nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDD8447L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd8447lf085-datasheets-2416.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 2 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 65W Tc | 50A | 0.0085Ohm | 40 mJ | N-Channel | 1970pF @ 20V | 8.5m Ω @ 14A, 10V | 3V @ 250μA | 50A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC90N04S5L3R3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipc90n04s5l3r3atma1-datasheets-2309.pdf | 8-PowerTDFN | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 62W Tc | 90A | 360A | 0.0047Ohm | 40 mJ | N-Channel | 2145pF @ 25V | 3.3m Ω @ 45A, 10V | 2V @ 23μA | 90A Tc | 40nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFRC20TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 4.4Ohm | 3 | No | 18A | 650V | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | 600V | 2V | 2.5W Ta 42W Tc | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 2 V | 4.4Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y19-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9y19100e115-datasheets-2460.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 4 | 1 | 18.5 ns | 36.8ns | 34.3 ns | 59.6 ns | 56A | 10V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | MO-235 | 226A | 0.019Ohm | N-Channel | 5085pF @ 25V | 18m Ω @ 15A, 10V | 2.1V @ 1mA | 56A Tc | 39nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC3612 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc3612-datasheets-2481.pdf | 8-PowerWDFN | 3.3mm | 800μm | 3.3mm | Lead Free | 5 | 14 Weeks | 180mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | DUAL | 1 | Single | 2.3W | 1 | FET General Purpose Power | 150°C | S-PDSO-N5 | 7.4 ns | 2.8ns | 2 ns | 19 ns | 3.3A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 2.3W Ta 35W Tc | MO-240BA | 32 mJ | 100V | N-Channel | 880pF @ 50V | 2.5 V | 110m Ω @ 3.3A, 10V | 4V @ 250μA | 3.3A Ta 16A Tc | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STL30P3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl30p3llh6-datasheets-2506.pdf | 8-PowerVDFN | Lead Free | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL30 | NOT SPECIFIED | 30A | 30V | 75W Tc | P-Channel | 1450pF @ 25V | 30m Ω @ 4.5A, 10V | 1V @ 250μA (Min) | 30A Tc | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS410DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis410dnt1ge3-datasheets-2517.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 4.8mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 8 | Single | 5.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 25 ns | 15ns | 15 ns | 30 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 3.8W Ta 52W Tc | 22A | 60A | N-Channel | 1600pF @ 10V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SUD23N06-31-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud23n0631ge3-datasheets-2119.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 31mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | 4 | 1 | Single | 30 | 5.7W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 250ns | 68 ns | 35 ns | 9.1A | 20V | SILICON | DRAIN | SWITCHING | 3V | 5.7W Ta 31.25W Tc | 50A | 20 mJ | 60V | N-Channel | 670pF @ 25V | 31m Ω @ 15A, 10V | 3V @ 250μA | 21.4A Tc | 17nC @ 10V | 4.5V 10V | ±20V |
