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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD17551 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 3W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.1 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.8m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1272pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 48A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 4.5V |
| Rise Time | 15.5ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.3 ns |
| Turn-Off Delay Time | 11.9 ns |
| Continuous Drain Current (ID) | 48A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 30V |
| Feedback Cap-Max (Crss) | 24 pF |
| Length | 4.9mm |
| Width | 6mm |
| Thickness | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
CSD17551Q5A is a 30v N-Channel NexFET? Power MOSFET. The NexFET power MOSFET CSD17551Q5A has been designed to minimize losses in power conversion applications. The CSD17551Q5A can be applied in Point of load Synchronous Buck in Networking, Telecom, and Computing Systems, and Optimized for Control FET Applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor CSD17551Q5A is in the VSONP-8 package with 3W power dissipation.
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm x 6-mm Plastic Package
Networking
Telecom
Computing Systems
Optimized for Control FET Applications
Please send RFQ , we will respond immediately.