CSD17551Q5A

CSD17551Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi


  • Manufacturer: Texas Instruments
  • NO: 815-CSD17551Q5A
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 9237
  • Description: CSD17551Q5A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD17551
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 9.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1272pF @ 15V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 4.5V
Rise Time 15.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.3 ns
Turn-Off Delay Time 11.9 ns
Continuous Drain Current (ID) 48A
Threshold Voltage 1.7V
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Feedback Cap-Max (Crss) 24 pF
Length 4.9mm
Width 6mm
Thickness 1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

CSD17551Q5A Description


CSD17551Q5A is a 30v N-Channel NexFET? Power MOSFET. The NexFET power MOSFET CSD17551Q5A has been designed to minimize losses in power conversion applications. The CSD17551Q5A can be applied in Point of load Synchronous Buck in Networking, Telecom, and Computing Systems, and Optimized for Control FET Applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor CSD17551Q5A is in the VSONP-8 package with 3W power dissipation.



CSD17551Q5A Features


  • Ultra-Low Qg and Qgd

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5-mm x 6-mm Plastic Package



CSD17551Q5A Applications


  • Networking

  • Telecom

  • Computing Systems

  • Optimized for Control FET Applications


In Stock

Please send RFQ , we will respond immediately.