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ContactFDD6637
FDD6637 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDD6637
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4642
- Description: FDD6637 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | -35V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -1.6 V |
| Height | 2.517mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 11.6MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 57W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11.6m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2370pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta 55A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 35V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 36 ns |
| Turn-Off Delay Time | 62 ns |
| Continuous Drain Current (ID) | -13A |
| Threshold Voltage | -1.6V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain Current-Max (Abs) (ID) | 55A |
Description
The FDD6637 is a PowerTrench? MOSFET that operates at -35V and has been specifically designed to reduce on-state resistance and preserve low gate charge for enhanced switching performance. The most recent medium voltage power MOSFET is an optimized power switch that combines a soft reverse recovery body diode, a small gate charge (QG), and a tiny reverse recovery charge (Qrr) to contribute to quick switching for synchronous rectification in AC/DC power supply. Charge balance is provided by the shielded-gate construction it uses. The FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower thanks to the use of this cutting-edge technology than that of the previous generation. Because it may reduce the unfavorable voltage spikes in synchronous rectification, the soft body diode performance of the new PowerTrench? MOSFET allows for the elimination of snubber circuits or the replacement of higher voltage rating - MOSFET requires circuits. This product is all-purpose and appropriate for a wide range of uses.
Features
High performance trench technology for extremely low RDS (on)
–55 A, –35 V RDS(ON) = 11.6 mW @ VGS = –10 V
RDS(ON) = 18 mW @ VGS = –4.5 V
RoHS Compliant
Withstand voltage
Low On-Resistance
High current
Applications
Inverter
Power supplies
Automotive electronics
As switching devices in electronic control units
As power converters in modern electric vehicles
