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ContactSTD5N20LT4
STD5N20LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STD5N20LT4
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 5441
- Description: STD5N20LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | STripFET™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 700mOhm |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STD5N |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 33W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 33W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 700m Ω @ 2.5A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 242pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V |
| Rise Time | 21.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15.5 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Dual Supply Voltage | 200V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 2.5 V |
| Height | 2.63mm |
| Length | 6.6mm |
| Width | 6.2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STD5N20LT4 Description
STD5N20LT4 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 200V. The operating temperature of the STD5N20LT4 is -55°C~150°C TJ and its maximum power dissipation is 33W Tc. The STD5N20L makes use of the most recent advanced design guidelines for ST's exclusive STripFETTM technology. The most demanding DC motor control and lighting applications can use this.
STD5N20LT4 Features
TYPICAL RDS(on) = 0.65 ? @ 5V
CONDUCTION LOSSES REDUCED
LOW INPUT CAPACIATNCE
LOW THRESHOLD DEVICE
STD5N20LT4 Applications
UPS AND MOTOR CONTROL
LIGHTING
