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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 10.2MOhm |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 19 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.6m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2820pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 16A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
| Rise Time | 64ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 120 ns |
| Turn-Off Delay Time | 160 ns |
| Continuous Drain Current (ID) | -16A |
| Threshold Voltage | -1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Avalanche Energy Rating (Eas) | 330 mJ |
| Nominal Vgs | -1.8 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF9317TRPBF is a -30V Single P-Channel HEXFET Power MOSFET. The Infineon IRF9317TRPBF features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRF9317TRPBF is in the SOIC-8 package with 2.5W power dissipation.
Optimized for broadest availability from distribution partners
Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
Reduced design complexity in high-side configuration (vs N-channel device)
Easier interface to Microcontroller (vs N-channel device)
Charge and Discharge Switch for Notebook PC Battery Application
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
Please send RFQ , we will respond immediately.