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ContactIRLL3303TRPBF
IRLL3303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLL3303TRPBF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8424
- Description: IRLL3303TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 31mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4.6A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 31m Ω @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 4.6A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| Recovery Time | 98 ns |
| Nominal Vgs | 1 V |
| Height | 1.8mm |
| Length | 6.6802mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
IRLL3303TRPBF Description
The IRLL3303TRPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. The IRLL3303TRPBF is designed for surface-mount using vapor phase, infrared, or wave soldering techniques.
IRLL3303TRPBF Features
Surface Mount
Dynamic dv/dt Rating
Logic-Level Gate Drive
Fast Switching
Ease of Paralleling
Advanced Process Technology
Ultra-Low On-Resistance
Lead-Free
IRLL3303TRPBF Applications
Mechanical testing
Vibration analysis
Ultrasonic inspection
Data logging
Induction furnaces
Arc furnaces and arc welders
