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IRFR3710ZTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFR3710ZTRLPBF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8362
- Description: IRFR3710ZTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 140W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 18m Ω @ 33A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2930pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 42A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| JEDEC-95 Code | TO-252AA |
| Drain Current-Max (Abs) (ID) | 42A |
| Drain-source On Resistance-Max | 0.018Ohm |
| Pulsed Drain Current-Max (IDM) | 220A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 150 mJ |
| RoHS Status | ROHS3 Compliant |
IRFR3710ZTRLPBF Description
IRFR3710ZTRLPBF is a 100v Single N-Channel HEXFET Power MOSFET. International Rectifier's logic level gate drive trench HEXFET? power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRFR3710ZTRLPBF is in the TO-252-3 package with 140W power dissipation.
IRFR3710ZTRLPBF Features
HEXFET? power MOSFET
Advanced process technology
Ultra-low on-resistance
175°C operating temperature
Fast switching
Repetitive avalanche allowed up to Tjmax
IRFR3710ZTRLPBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits
