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ContactFQD7P20TM
FQD7P20TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FQD7P20TM
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4126
- Description: FQD7P20TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 690m Ω @ 2.85A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 110ns |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 42 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 5.7mA |
| Threshold Voltage | -5V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | -200V |
| Avalanche Energy Rating (Eas) | 570 mJ |
| Nominal Vgs | 5 V |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 690mOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | -5.7A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Voltage | 150V |
| Power Dissipation-Max | 2.5W Ta 55W Tc |
| Element Configuration | Single |
| Current | 13A |
| Operating Mode | ENHANCEMENT MODE |
FQD7P20TM Description
FQD7P20TM is a -200v P-Channel QFET? Power MOSFET. This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET FQD7P20TM has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The FQD7P20TM is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQD7P20TM Features
-5.7A, -200V, RDS(on) = 0.69Ω(Max.) @VGS = -10 V, ID = -2.85A
Low gate charge ( Typ. 19nC)
Low Crss ( Typ. 25pF)
100% avalanche tested
Drain-Source Voltage: -200v
FQD7P20TM Applications
Switched mode power supplies
Audio amplifier
DC motor control
Variable switching power applications
Lighting
